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11. 发明专利

JP2008300793A Catalytic chemical vapor deposition apparatus 有权
标题翻译：催化化学蒸气沉积装置
公开(公告)号：JP2008300793A
公开(公告)日：2008-12-11
申请号：JP2007148306
申请日：2007-06-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , HASHIMOTO YUKINORI , ASARI SHIN
IPC分类号： H01L21/205 , C23C16/24 , C23C16/42 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a catalytic chemical vapor deposition apparatus that can increase the lifespan of catalytic wires.
SOLUTION: In a catalytic chemical vapor deposition apparatus 1 of the present invention, tantalum wires having a tantalum boride layer on their surfaces are used as catalytic wires 6. Because a boride of metal tantalum (tantalum boride) is harder than metal tantalum, use of tantalum wires having a tantalum boride layer on their surfaces as catalytic wires reduces thermal extension of catalytic wires and increases their mechanical strength, thereby increasing their lifespan. In addition, energization-heating the catalytic wires 6 by means of continuous energization can further increase the lifespan of the catalytic wires 6.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供可以增加催化丝寿命的催化化学气相沉积设备。解决方案：在本发明的催化化学气相沉积设备1中，其表面具有硼化硼层的钽丝被用作催化丝6.因为金属钽（硼化钽）的硼化物比金属钽在其表面上使用具有硼化硼层的钽丝作为催化丝减少催化丝的热延伸并增加其机械强度，从而增加其寿命。另外，通过连续通电加热催化丝6可进一步提高催化丝6的寿命。版权所有（C）2009，JPO＆INPIT

12. 发明专利

JP2007277617A Vertical chemical vapor deposition apparatus 有权
标题翻译：垂直化学蒸气沉积装置
公开(公告)号：JP2007277617A
公开(公告)日：2007-10-25
申请号：JP2006103743
申请日：2006-04-05
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , HASHIMOTO YUKINORI , KUWABARA KIYOSHI , OGATA HIDEYUKI , MASUDA HAJIME , OKAYAMA TOMOHIKO
IPC分类号： C23C16/458 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of performing the film deposition on both sides of a substrate, having small installation area, short film deposition process, and capable of preventing any abnormal discharge.
SOLUTION: The vertical chemical vapor deposition apparatus comprises a film deposition chamber 5 having a gas introduction means and an exhaust means, a substrate holder 101 for holding a substrate S, a conveying means for conveying the substrate holder 101, and an inversion means for inverting the substrate holder 101.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种能够在基板的两面进行成膜的成膜装置，其安装面积小，薄膜沉积工艺小，能够防止任何异常放电。解决方案：垂直化学气相沉积装置包括具有气体引入装置和排气装置的成膜室5，用于保持基板S的基板保持件101，用于输送基板保持件101的输送装置和反转用于翻转衬底保持器101的装置。版权所有（C）2008，JPO＆INPIT

13. 发明专利

JP2007027485A Method and device for deposition 审中-公开
标题翻译：用于沉积的方法和装置
公开(公告)号：JP2007027485A
公开(公告)日：2007-02-01
申请号：JP2005208688
申请日：2005-07-19
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , ASARI SHIN , SAITO KAZUYA , TSUBOI HIDEO , OGATA HIDEYUKI , OKAYAMA TOMOHIKO
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a method of deposition capable of simplifying a device for deposition.
SOLUTION: In the method; a raw-material gas introduced into a chamber 2 is activated by catalyst wires 3, and the films are deposited on substrates 6 to be treated. The method for has a process in which the substrates 6 are heated and treated by using the catalyst wires 3 before a deposition process. In a heat treatment process, it is desirable that the catalyst wires 3 are arranged on both sides of the substrates 6 and the substrates 6 are heated and treated. In the deposition process, it is desirable that the catalyst wires 3 are arranged on both sides of the substrates 6, and the films are deposited on both surfaces of the substrates 6.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够简化沉积装置的沉积方法。解决方案：在方法中; 引入到室2中的原料气体被催化剂丝3活化，并且将膜沉积在待处理的基板6上。该方法具有通过在沉积工艺之前使用催化剂丝3来加热和处理基板6的工艺。在热处理工序中，优选将催化剂丝3配置在基板6的两面，对基板6进行加热处理。在沉积工艺中，期望催化剂丝3布置在基底6的两侧，并且膜沉积在基底6的两个表面上。（C）2007，JPO和INPIT

14. 发明专利

JP2012119537A Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：JP2012119537A
公开(公告)日：2012-06-21
申请号：JP2010268820
申请日：2010-12-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TANAKA YOSHIKAZU , SAITO KAZUYA , KATAGIRI HIROAKI , KOMATSU TAKASHI , OKO YOSHIKI , KANAZAWA KEISUKE , TAKAGI MAKIKO , NISHIKATA YASUSHI , OSONO SHUJI , SAKATA GENJI , YOKOO HIDEKAZU , SUZUKI HIDEO , TOMITA MASATO , NISHIBASHI TSUTOMU
IPC分类号： H01L31/04
CPC分类号： Y02E10/546 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device which can reduce the number of manufacturing steps of a photoelectric conversion device having an impurity region on the side surface of a semiconductor substrate covered with a passivation film.SOLUTION: A solar cell comprises a silicon substrate 11 having a light-receiving surface 11a, and a rear surface 11b on the reverse side of the light-receiving surface 11a is covered with a silicon oxide film 13 and a silicon nitride film 14 while having an N type impurity region 11n and a P type impurity region. When the solar cell is manufactured, the silicon oxide film 13 and the silicon nitride film 14 are formed on the rear surface 11b. Subsequently, an ion beam 23a of N type impurity element is irradiated toward the rear surface 11b from above the silicon oxide film 13 and silicon nitride film 14 thus forming an N type impurity region 11n in the rear surface 11b. An ion beam 24a of P type impurity element is also irradiated toward the rear surface 11b from above the silicon oxide film 13 and silicon nitride film 14 thus forming a P type impurity region in the rear surface 11b.
摘要翻译：解决的问题：提供一种制造光电转换装置的方法，其可以减少在被钝化膜覆盖的半导体衬底的侧表面上具有杂质区的光电转换装置的制造步骤数量。解决方案：太阳能电池包括具有光接收表面11a的硅衬底11，并且在受光面11a的背面上的后表面11b被氧化硅膜13覆盖，并且氮化硅膜同时具有N型杂质区域11n和P型杂质区域。当制造太阳能电池时，在后表面11b上形成氧化硅膜13和氮化硅膜14。随后，从后面11b中形成N型杂质区域11n的氧化硅膜13和氮化硅膜14的上方向背面11b照射N型杂质元素的离子束23a。 P型杂质元素的离子束24a也从氧化硅膜13和氮化硅膜14的背面11b向背面11b照射，从而形成P型杂质区。版权所有（C）2012，JPO＆INPIT

15. 发明专利

JP2012060080A Crystal solar battery and method for producing the same 审中-公开
标题翻译：水晶太阳能电池及其制造方法
公开(公告)号：JP2012060080A
公开(公告)日：2012-03-22
申请号：JP2010204734
申请日：2010-09-13
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TANAKA YOSHIKAZU , KIKUCHI MAKOTO , KATAGIRI HIROAKI , KOMATSU TAKASHI , KIKUCHI YUKIO , OSONO SHUJI , NISHIKATA YASUSHI , TAKAGI MAKIKO , KANAZAWA KEISUKE , SAKAO YOSUKE , ASARI SHIN , SAITO KAZUYA , OTA ATSUSHI
IPC分类号： H01L31/04
CPC分类号： H01L31/028 , H01L31/03685 , H01L31/03687 , H01L31/03762 , H01L31/03765 , H01L31/056 , H01L31/0747 , H01L31/1804 , H01L31/1812 , H01L31/202 , H01L31/204 , Y02E10/52 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a solar battery with further improved photoelectric transfer characteristic.SOLUTION: A solar battery of the present invention is a crystal solar battery having a crystalline substrate that implements a photoelectric conversion function between a light-receiving surface for receiving light and a reverse surface opposite to the light-receiving surface. The crystalline substrate is a flat base substrate including a p-type or n-type monocrystalline or polycrystalline silicon, the crystalline substrate comprises: a first semiconductor layer comprising an amorphous or microcrystalline silicon of reverse or same conductivity type with regard to the base substrate disposed on the light-receiving surface side of the base substrate; a second semiconductor layer comprising an amorphous or microcrystalline silicon of reverse conductive type with regard to the first semiconductor layer disposed on the rear side of the base substrate; and a silicon oxide layer disposed between the base substrate and the first semiconductor layer or between the base substrate and the second semiconductor substrate.
摘要翻译：要解决的问题：提供具有进一步改善的光电转移特性的太阳能电池。解决方案：本发明的太阳能电池是具有在用于接收光的受光面与与受光面相反的反面之间实现光电转换功能的晶体基板的晶体太阳能电池。晶体衬底是包括p型或n型单晶或多晶硅的平坦基底，晶体衬底包括：第一半导体层，其包括相对于基底衬底布置的反向或相同导电类型的非晶或微晶硅在基底基板的受光面侧; 第二半导体层，其包括相对于设置在所述基底基板的后侧上的所述第一半导体层的反向导电型的非晶或微晶硅; 以及设置在所述基底基板和所述第一半导体层之间或所述基底基板和所述第二半导体基板之间的氧化硅层。版权所有（C）2012，JPO＆INPIT

16. 发明专利

JP2011199277A Surface treatment method and method for manufacturing solar cell 审中-公开
标题翻译：表面处理方法和制造太阳能电池的方法
公开(公告)号：JP2011199277A
公开(公告)日：2011-10-06
申请号：JP2011043222
申请日：2011-02-28
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , SAITO KAZUYA , MATSUMURA HIDEKI , OHIRA KEISUKE
IPC分类号： H01L21/22 , H01L31/04
CPC分类号： Y02E10/546 , Y02E10/547 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment method providing a crystalline silicon substrate which extends the lifetime of a carrier, and also to provide a method for manufacturing a solar cell having improved characteristics by using the crystalline silicon substrate.SOLUTION: A reactive gas containing a phosphine gas and a hydrogen gas is allowed to contact a heated catalyst to generate radicals, and the radicals are supplied to a substrate 51 to be processed made of a crystalline silicon to execute surface treatment of the substrate 51. An ndope layer 52 containing doped phosphor is formed on the substrate 51 which has subjected to the treatment. Then, a silicon nitride film 53 is formed on the ndope layer 52. Thus, the service life of the carrier on an interface between the substrate 51 and the silicon nitride film 53. A solar cell 50 having the improved characteristics by using the substrate 51 is provided.
摘要翻译：要解决的问题：提供一种提供延长载体寿命的晶体硅衬底的表面处理方法，并且还提供一种通过使用晶体硅衬底制造具有改进特性的太阳能电池的方法。解决方案：反应气体使磷化氢气体和氢气与加热的催化剂接触以产生自由基，并将自由基供给到由晶体硅制成的待加工基板51，以进行基板51的表面处理。包含在经过处理的基板51上形成掺杂磷光体。然后，在印刷层52上形成氮化硅膜53.因此，载体在基板51和氮化硅膜53之间的界面上的使用寿命。通过使用基板51具有改善的特性的太阳能电池50 被提供。

17. 发明专利

JP2009130255A Deposition device 审中-公开
标题翻译：沉积装置
公开(公告)号：JP2009130255A
公开(公告)日：2009-06-11
申请号：JP2007305877
申请日：2007-11-27
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , NISHIKATA YASUSHI , ASARI SHIN , OGATA HIDEYUKI , OKAYAMA TOMOHIKO
IPC分类号： H01L21/205 , C23C16/44 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To provide a deposition device that improves stability of deposition processing, using a catalytic wire, by measuring a temperature of a catalytic wire under high reliability.
SOLUTION: The deposition device has a power supply for heating a catalytic wire 15 to allow the catalytic wire 15 to emit visible light, each transmissive window 22 formed in each deposition chamber to transmit visible light from inside each deposition chamber to the outside, each luminosity detection part 20 arranged to the outside of each deposition chamber to detect luminosity via each transmissive window 22, a storage part 25B for previously storing target luminosity data regarding luminosity when the catalytic wire is at a prescribed temperature, a control part 25 for comparing the detection result of each luminosity detection part 20 with the target luminosity data to determine whether the temperature of the catalytic wire 15 reaches the prescribed temperature, and an output part 26 to output the determination results of the control part 25.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种通过在高可靠性下测量催化丝的温度来提高使用催化丝的沉积处理稳定性的沉积装置。解决方案：沉积装置具有用于加热催化丝15以允许催化丝15发射可见光的电源，每个沉积室中形成的每个透射窗22将每个沉积室内的可见光透射到外部每个照度检测部分20布置在每个沉积室的外部以经由每个透射窗22检测发光度;存储部25B，用于预先存储当催化丝处于规定温度时的亮度的目标亮度数据;控制部25，将每个亮度检测部分20的检测结果与目标亮度数据进行比较，以确定催化剂丝15的温度是否达到规定温度;以及输出部分26，输出控制部分25的确定结果。（C）2009，JPO＆INPIT

18. 发明专利

JP2005327995A Catalyst cvd equipment 有权
标题翻译：催化CVD设备
公开(公告)号：JP2005327995A
公开(公告)日：2005-11-24
申请号：JP2004146648
申请日：2004-05-17
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , ASARI SHIN , SAITO KAZUYA , TSUBOI HIDEO , ANDO NOBUHIRO , OKAYAMA TOMOHIKO
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide catalyst CVD equipment which uniformly deposit deposition materials produced by activation or decomposition, in a substrate surface even in constitution in which a substrate is vertically held and the substrate is horizontally arranged.
SOLUTION: Storage vessels 8a, 8b for reactant gas are provided respectively at a substrate holding face side and on a rear face at an opposite side of substrate holders 5a, 5b which are almost vertically provided, then a plurality of gas jet holes 7 are formed so as to make the rear face and the substrate holding face of the substrate holders 5a, 5b penetrate the holes. The reactant gas is introduced into the storage vessels 8a, 8b from a gas introducing system through introducing pipes 9a, 9b, then the reactant gases stored in the storage vessels 8a, 8b for the reactant gas are jetted out to substrate holding face sides of the substrate holders 5a, 5b through the gas jet holes 7.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在垂直保持基板并且基板水平布置的构造中，提供均匀地沉积由活化或分解产生的沉积材料的催化剂CVD设备。解决方案：用于反应气体的储存容器8a，8b分别设置在几乎垂直设置的基板保持件5a，5b的相对侧的基板保持面侧和背面，然后形成多个气体喷射孔 7形成为使基板保持件5a，5b的背面和基板保持面贯穿孔。通过引入管9a，9b将反应气体从气体导入系统引入到储存容器8a，8b中，然后将存储在用于反应气体的储存容器8a，8b中的反应气体喷射到基板保持面侧衬底保持器5a，5b穿过气体喷射孔7.版权所有（C）2006，JPO＆NCIPI

19. 发明专利

JP2012227380A Energization heating wire, production method of energization heating wire and vacuum processing apparatus 有权
标题翻译：加热加热线，加热线和真空加工装置的生产方法
公开(公告)号：JP2012227380A
公开(公告)日：2012-11-15
申请号：JP2011094089
申请日：2011-04-20
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , NISHIKATA YASUSHI , TAMARU YOSHIHISA , OGATA HIDEYUKI
IPC分类号： H01L21/31 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide an energization heating wire which does not elongate thermally and has excellent durability, and to provide a production method of an energization heating wire and a vacuum processing apparatus.SOLUTION: The energization heating wire (TaBN wire 20) has a first layer 21 consisting of a tantalum nitride wire, and a second layer 22 covering the surface of the first layer 21 and consisting of a boride, for example. In other words, denitrogenation from the tantalum nitride wire can be suppressed under a high temperature environment, by covering the surface of the tantalum nitride wire having high strength and low deformation with the second layer, and the tantalum nitride wire can be used as an energization heating wire having very high durability. A vacuum processing apparatus using such a TaBN wire 20 can enhance productivity while reducing the cost and, at the same time, film quality can be stabilized during deposition of substrate.
摘要翻译：要解决的问题：提供一种不会热延伸并且具有优异的耐久性的通电加热丝，并且提供通电加热丝和真空处理装置的制造方法。
解决方案：通电加热线（TaBN线20）具有由氮化钽线构成的第一层21和覆盖第一层21的表面的第二层22，例如由硼化物构成。换句话说，可以在高温环境下，通过用第二层覆盖高强度和低变形的氮化钽线的表面，可以抑制来自氮化钽线的脱氮，并且氮化钽线可以用作通电加热丝具有非常高的耐久性。使用这种TaBN线20的真空处理装置可以在降低成本的同时提高生产率，并且同时可以在沉积基板期间使膜质量稳定。版权所有（C）2013，JPO＆INPIT

20. 发明专利

JP2012117109A Film forming device 有权
标题翻译：电影制作装置
公开(公告)号：JP2012117109A
公开(公告)日：2012-06-21
申请号：JP2010267795
申请日：2010-11-30
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , YAMAMOTO HIROKO , NISHIKATA YASUSHI , ZAMA HIDEAKI
IPC分类号： C23C14/58 , C23C14/02
摘要： PROBLEM TO BE SOLVED: To provide a film forming device capable of efficiently producing thin films without ion damage while preventing peeling between the thin films.SOLUTION: The film forming device includes: a first film forming treatment apparatus 13 and a second film forming treatment apparatus 15 in which a thin film is formed on a substrate S; and a surface treatment apparatus 14 in which hydrogen gas supplied in a reaction chamber 141 is brought into contact with a catalyst body to generate radical and the radical is supplied to the substrate S to perform surface treatment of the substrate S. The surface treatment apparatus 14 is provided to perform the surface treatment of the substrate S at the backward of the first film forming treatment apparatus 13 and the forward of the second film forming treatment apparatus 15.
摘要翻译：要解决的问题：提供一种能够有效地生产薄膜而不会产生离子损伤同时防止薄膜之间的剥离的成膜装置。＆lt; P＆gt;解决方案：成膜装置包括：第一成膜处理装置13和第二成膜处理装置15，其中在基板S上形成薄膜; 以及表面处理装置14，其中供应到反应室141中的氢气与催化剂体接触以产生自由基，并且将基体供应到基板S以进行基板S的表面处理。表面处理装置14 被设置为在第一成膜处理装置13的后方和第二成膜处理装置15的前方进行基板S的表面处理。（C）2012，JPO＆INPIT

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