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11. 发明专利

JPS59169131A Drawing device by electron beam 失效
标题翻译：电子束绘图装置
公开(公告)号：JPS59169131A
公开(公告)日：1984-09-25
申请号：JP4216583
申请日：1983-03-16
申请人： Hitachi Ltd
发明人： SAITOU NORIO , OZASA SUSUMU , MATSUZAKA TAKASHI
IPC分类号： H01L21/30 , H01J37/147 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： PURPOSE:To improve the drawing speed by forming the beam of peculiar shape by combination of a variable arranging beam and some kinds of peculiar area beam instead of drawing all patterns including obliqueness and roundness by dividing them into minute rectangules. CONSTITUTION:The conventional type optical system is provided with a selection coil 50 and a beam-axis aligning coil 51. On a second arranging aperture plate 30, a proper number of peculiar apertures having high frequency of use are arranged in addition to a rectangular aperture. Formation of the variable rectangular beam is carried out by a deflector 9. At this time, the electrical current flown into the coils 50 and 51 is 0. When selecting a peculiar basic figure, deflecting function of the deflector 9 is released and the current corresponding to the selection coil 50 is flown to deflect the beam as shown by 2'. In this case, the current of corresponding quantity is flowed into the coil 51 in order to correct the displacement of the beam from the optical axis after passing through the second aperture.
摘要翻译：目的：通过组合可变排列光束和某种特殊区域光束形成特殊形状的光束来提高绘图速度，而不是通过将它们分成微小的矩形来绘制所有包括倾斜和圆度的图案。构成：常规型光学系统设置有选择线圈50和射束轴线对准线圈51.在第二配置孔板30上，除了矩形孔之外还布置了适当数量的具有高频率使用的特殊孔。可变矩形梁的形成由偏转器9进行。此时，流入线圈50和51的电流为0.当选择特殊的基本图形时，偏转器9的偏转功能被释放，并且电流对应如图2所示，流向选择线圈50以使光束偏转。在这种情况下，相应量的电流流入线圈51，以便在通过第二孔之后校正光束从光轴的位移。

12. 发明专利

JPS5932127A Electromagnetic deflector 失效
标题翻译：电磁偏转器
公开(公告)号：JPS5932127A
公开(公告)日：1984-02-21
申请号：JP14111682
申请日：1982-08-16
申请人： Hitachi Ltd
发明人： MIYATA TOSHIMITSU , KUBOTA SHIGEO , KONDOU YOSHIMASA , OZASA SUSUMU , SAITOU NORIO
IPC分类号： H01L21/027 , H01J37/141 , H01L21/30
CPC分类号： H01J37/141
摘要： PURPOSE:To avoid the decrease in the drawing accuracy of an electromagnetic deflecting coil due to a heat generation by composing a deflection having the electromagnetic deflecting coil for deflecting an electron beam of a coil bobbin of a nonconductive and low thermal expansion material in an electron beam application apparatus. CONSTITUTION:An electron beam 2 from an electron gun 1 which is disposed on the top in a mirror barrel 3 is converged through many electron lenses 4 provided in the mirror barrel 3, deflected by an electromagnetic deflector 9, and exposed in the prescribed pattern on the surface of an article 7 to be drawn and fixed onto a movable base 6 in a lower drawing chamber 4. At this time the drawing accuracy is set in a submicron unit. In this structure, the coil 10 of the deflector 9 is formed by winding of ceramic cylindrical coil bobbin 11 of a nonconductive and low expansion material, thereby transmitting the heat generated from the coil 10 to the bobbin 11 and suppressing the thermal deformation of the coil 10 to the minimum value. In his manner, the drift of the beam is reduced to enhance the deflecting accuracy, thereby improving the drawing accuracy.
摘要翻译：目的：为了避免由于通过组合具有用于偏转电子束中的非导电和低热膨胀材料的线圈架的电子束的电磁偏转线圈的偏转而导致的电磁偏转线圈的拉拔精度的降低应用设备。构成：设置在镜筒3的顶部的电子枪1的电子束2会聚到设置在镜筒3中的许多电子透镜4，由电磁偏转器9偏转，并以规定的图案曝光将待拉伸并固定在下拉出室4中的可移动基座6上的物品7的表面。此时，拉伸精度设定为亚微米单位。在这种结构中，偏导器9的线圈10通过卷绕不导电和低膨胀材料的陶瓷圆柱形线圈架11而形成，从而将从线圈10产生的热量传递到线轴11并抑制线圈的热变形 10到最小值。以他的方式，减小了光束的漂移以提高偏转精度，从而提高了绘图精度。

13. 发明专利

JPS58171817A ELECTRON BEAM LITHOGRAPHY APPARATUS 失效
公开(公告)号：JPS58171817A
公开(公告)日：1983-10-08
申请号：JP5388982
申请日：1982-04-02
申请人： HITACHI LTD
发明人： NAKAMURA KAZUMITSU , SAITOU NORIO
IPC分类号： H01J37/305 , H01J37/04 , H01J37/30 , H01L21/027
摘要： PURPOSE:To increase an electron beam blanking in deflection sensitivity, by arranging such that the position of a sample irradiated by an electron beam is controlled according to a pattern to be formed on the sample. CONSTITUTION:An electron beam from an electron gun 1 is converged on a sample 5 by means of electron lenses 2-4. An aperture plate 6 is disposed in the lens 2, so that the electron beam is partly cut off by means of the plate 6. An electron beam deflector 7 is disposed between the lens 4 and the sample 5. A deflection signal according to a pattern to be formed on the sample 5 is applied to the deflector 7 from a controller 8. An electron beam deflector 10 constituted by electrodes is disposed between the lenses 2 and 3, while an aperture plate 11 having an aperture which allows the electron beam to pass therethrough is disposed between the lenses 3 and 4. A deflection voltage, as a blanking signal according to a pattern to be formed on the sample 5, is applied to the deflector 10 from the controller 8. Accordingly, the electron beam blanking is increased in deflection sensitivity.

14. 发明专利

JPS5795627A METHOD FOR ARRANGING MARK IN ELECTRON BEAM EXPOSURE 失效
公开(公告)号：JPS5795627A
公开(公告)日：1982-06-14
申请号：JP17088580
申请日：1980-12-05
申请人： NIPPON TELEGRAPH & TELEPHONE , HITACHI LTD
发明人： MATSUDA KOREHITO , TAKAMOTO KIICHI , OOKUBO TSUNEO , SAITOU NORIO , YOKOUCHI HISATAKE
IPC分类号： H01L21/027 , H01J37/304 , H01L21/30
摘要： PURPOSE:To improve a yield rate by arranging aligning marks and spare marks with a specified interval being provided on a plurality of positions on scribing lines, saving mark occupying areas on chips, and making it possible to compensate displacement when the marks are damaged. CONSTITUTION:A plurality of chips 4 on a wafer 1 is grouped in one block. The aligning marks 2 are arranged at e.g. four positions in each block. The shift of the position of the pattern due to the distortion of the wafer 1 is checked and compensated, and the scribing is performed. In the vicinity of each mark 2, the spare mark 3 is arranged with a specified interval being provided. The positions of the marks 2 and 3 are located in the region of the scribe lines provided for dividing the chip into four areas. In this method, the mark occupying area can be saved, several marks 2 and 3 can be provided for every location. Even though the mark 2 is damaged during the treating process of the wafer 1, the distortion compensation can be accurately performed and the yield rate of the chip 4 can be improved.

15. 发明专利

JPS56125832A IRIS APERTURE FOR SHAPING IN CHARGED PARTICLE RADIATION DEVICE 失效
公开(公告)号：JPS56125832A
公开(公告)日：1981-10-02
申请号：JP2813780
申请日：1980-03-07
申请人： HITACHI LTD
发明人： IWASAKI TERUO , SAITOU NORIO , YANAGISAWA AKIRA
IPC分类号： H01J37/09 , H01L21/027
摘要： PURPOSE:To obtain an iris operture having sharp-edged, microscopic and highly accurate shaping performance in a charged particle radiation device of an electron beam atterning equipment by a method wherein a desired iris aperture is formed by superpositioning two thin plares having a board section where the electron beam passes through. CONSTITUTION:When making the iris aperture to be used for shaping the desired form of the charged particle radiation using the electron beam patterning device, 2-4 of projection 15 to be used for positioning are provided around a disc-shaped thin plate 16 and a rectangular-shaped aperture 14 having the length of aXb (a

16. 发明专利

JPS5250681A FIELD RADIATION TYPE ELECTRONIC GUN 失效
公开(公告)号：JPS5250681A
公开(公告)日：1977-04-22
申请号：JP12635575
申请日：1975-10-22
申请人： HITACHI LTD
发明人： FUKUHARA SATORU , SAITOU NORIO , TODOKORO HIDEO
IPC分类号： H01J3/02 , H01J37/073
摘要： PURPOSE:A vapor source is composed of a filament or ribbon comprising an evaporating material and is directly energized from a constant voltage power source to be heated and evaporated, whereby the control of the thickness of vapor-deposited film is made easier.

17. 发明专利

JPS51147245A POSITION ADJUSTER OF SAMPLE 失效
公开(公告)号：JPS51147245A
公开(公告)日：1976-12-17
申请号：JP7150375
申请日：1975-06-13
申请人： HITACHI LTD
发明人： MATSUOKA TSUNEYA , SAITOU NORIO
IPC分类号： H01J37/20
摘要： PURPOSE:To provide an accurate adjustment of position without using a detedting circuit of reflecting electrons.

18. 发明专利

JPS60244025A ELECTRON BEAM DRAWING DEVICE 失效
公开(公告)号：JPS60244025A
公开(公告)日：1985-12-03
申请号：JP9867784
申请日：1984-05-18
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： OZASA SUSUMU , SAITOU NORIO , HARADA KATSUYUKI , FUJINAMI AKIHIRA , IWATATE KAZUMI
IPC分类号： H01J37/305 , G03F7/20 , H01J37/317 , H01L21/027 , H01L21/30
摘要： PURPOSE:To enable to attain high speed electron beam drawing with high precision by a method wherein a beam current is changed over corresponding to a figure, and the figure is drawn according to a large beam and a large pitch excluding the case when a figure of minutely high precision is to be drawn according to a small beam and a small pitch. CONSTITUTION:When a beam is small, electron lenses 3, 4 are used. Moreover, when the beam is made large, electron lenses 2, 4 are used to make the system to a magnification system. Namely, the beam can be changed only by selecting either of the lenses 2, 3 to be used, and the change of the beam current becomes to the square of magnification. When the electron beam current is made large, the scanning pitch is made rough, and the scanning speed is made the same, because the number of beam projecting times is small, and the scanning speed is the same when the figure is drawn with a large beam, drawing time can be curtailed.

19. 发明专利

JPS60121656A LATTER STEP ACCELERATION TYPE ION IMPLANTATION DEVICE 失效
公开(公告)号：JPS60121656A
公开(公告)日：1985-06-29
申请号：JP22686183
申请日：1983-12-02
申请人： HITACHI LTD
发明人： TOKIKUCHI KATSUMI , SAKUMICHI KUNIYUKI , OKADA OSAMI , KOIKE HIDEMI , SAITOU NORIO , OZASA SUSUMU
IPC分类号： H01J37/08 , C23C14/48 , H01J37/30 , H01J37/317 , H01L21/265 , H05H7/02 , H05H7/18 , H05H9/00
摘要： PURPOSE:To drive high energy ions without increasing the size of the captioned device while reducing the load on an operating power source by using a high- frequency quadruplex accelerator as an acceleration tube for the latter step acceleration of an ion implantation device. CONSTITUTION:An ion implantation device is formed of an ion source 1, a mass separator 2, a high-frequency quadruplex accelerator 10 and a driving chamber 5 with a sample 6 enclosed therein, while the high-frequency quadruplex accelerator 10 is formed of four electrodes having the periodically corrugated shape so that the two remaining electrodes may be concave at the part where the two opposing electrodes are convex. Further, the former step of the quadruplex accelerator 10 is provided with a two-step magnetic quadruplex lens 12 for converting a beam section in order to enable a driving current to be increased. Accordingly, the high-frequency quadruplex accelerator 10 makes it possible to accelerate with extremely good efficiency, thus making it possible to simply realize driving an mA class beam of 100KeV- several MeV with a light load on power source.

20. 发明专利

JPS57138757A CORRECTION OF DEFLECTION DISTORTION 失效
公开(公告)号：JPS57138757A
公开(公告)日：1982-08-27
申请号：JP2432781
申请日：1981-02-23
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU NORIO , OZASA SUSUMU , SHIMAZU NOBUO , OOKUBO TSUNEO
IPC分类号： H01J37/147 , H01J37/153 , H01J37/304 , H01J37/305 , H01L21/027
摘要： PURPOSE:To shorten time required for the calibration of the deflection distortion by using a large area deflector sufficiently calibrated instead of moving a stage, in order to obtain the calibrated value of the deflection distortion of a small area deflector. CONSTITUTION:A picturing area provided on a state 3 is divided into several small areas 11. A deflection toward the center (X, Y) of each small area 11 is performed with an electromagnetic deflector 4 (large area deflector), while a deflection toward the inner part (x, y) of each small area 11 is performed with an electrostatic deflector 5 (small area deflector). The calibration of the deflection distortion of the deflector 4 is carried out by moving a mark 18 formed on the state 3 over each small area 11 so as to adjust electron beams on the mark 18. On the other hand, the calibration of the deflection distortion of the deflector 5 is carried out by deflecting an electron beam by means of the calibrated deflector 4 by (X+ or -a, Y+ or -a)(a equals half the length of the side of the small area 11) so as to adjust the electron beam on the mark 18. Consequently, any movement of the stage 13 becomes unnecessary for the calibration of the deflector 5, and the calibration time can be shortened.

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