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    • 2. 发明专利
    • METHOD OF CORRECTION ATTENDANT ON DEFLECTION
    • JPS57210549A
    • 1982-12-24
    • JP9392081
    • 1981-06-19
    • HITACHI LTDNIPPON TELEGRAPH & TELEPHONE
    • KURODA KATSUHIROMIYAZAKI MASARUSHIMAZU NOBUO
    • H01J37/04H01J37/147H01L21/027
    • PURPOSE:To correct various aberrations attendant on deflection, by arranging at least eight marks in the vicinity of a deflecting field on the surface of irradiation, while irradiating a charged corpuscular beam to these marks, in reference to a charged corpuscular beam allied unit. CONSTITUTION:Marks 1-8 are added to the vicinity of a deflecting field in advance. When a charged corpuscular beam 11 is scanned on each mark, a secondary charged corpuscular beam is generated from the sample face and the incident beam falls in a detector 16. At this moment, the generating value of the charged corpuscular beam from the top of the mark and from the outside of it is different so that if the value is checked by the detector 16, relationships between this signal value to a deflector 14 and the mark position and the converged size of the charged corpuscular beam, etc., are made out. This operation is carried out by a measuring system 17. For example, each factor is found by a factorial determination system 18 with a minimal square-law, etc. On a basis of this factor, when deflection is carried out at a desirable position, a correction signal 20 is to be found by this factor and accurate correction comes achieved by the detector 21.
    • 3. 发明专利
    • DETECTION OF MARK LOCATION
    • JPS5541736A
    • 1980-03-24
    • JP11462578
    • 1978-09-20
    • HITACHI LTDNIPPON TELEGRAPH & TELEPHONE
    • KURODA KATSUHIROTAKAGI KIICHISHIMAZU NOBUO
    • H01L21/027H01J37/304
    • PURPOSE:To provide a device for detecting the location of a mark on a sample surface with ease and accuracy by scanning electron beams to the mark in accordance with certain scanning speed signals coupled with sine waves, and applying synchronous detection to the detecting output in consideration of the sine waves. CONSTITUTION:Electron beams 1 are scanned over a mark 3 provided on a sample surface 2, thereby to detect the location of the mark. In this device, the scanning of electron beams 1 is conducted by use of a detecting apparatus besides a signal oscillator 6 comprising a lamp generator and a sine wave generator, while the reflecting or passing electrons of the beams 1 are detected by use of an electron beam detector 7 or 8. With the detecting signals having passed an amplifier 9 and the sine wave phase at the signal oscillator 6 being adjusted by a changer 10, synchronous detection is carried out by a detector 11. Following the synchronous detection, observation is conducted by an observation apparatus 13 by way of a smoothing circuit 12. Thus, the mark location on the sample can be detected easily and accurately.
    • 8. 发明专利
    • CORRECTION OF PROJECTING POSITION AT CHARGED BEAM EXPOSURE DEVICE
    • JPS60119721A
    • 1985-06-27
    • JP22679583
    • 1983-12-02
    • NIPPON TELEGRAPH & TELEPHONE
    • MOROSAWA TETSUOSHIMAZU NOBUOSHIBAYAMA AKINORIFUJINAMI AKIHIRA
    • G03F7/20H01L21/027H01L21/30
    • PURPOSE:To perform pattern drawing in a high speed and moreover with high precision when a pattern is to be drawn on a sample using a charged beam by transferring continuously the sample by a method wherein the transferred quantity of the sample during the period from the time when the position of the sample is detected up to the time when the beam is projected actually is added to pattern data to be applied to a deflector. CONSTITUTION:A deflector 2 and a stage 3 put on with a sample 5 to be exposed are provided in an electrooptic lens barrel 1, data are read from a pattern memory 7 according to the command of a control computer 6, and the distortion of the sample 5 is corrected by a correction computing circuit 8. Then the position of the sample 5 is corrected by a position correcting circuit 9, the result thereof is sent to a correction computing circuit 12 through a displacement quantity calculating circuit 10 and an adder 11, and output therefrom is applied to the deflector 2 through a D/A converter 13 and an amplifier 14. While, the stage 3 is controlled by a stage control circuit 15 and a stage driving circuit 16 connected to the computer 6, and the position thereof is measured successively by a laser measuring machine 17. At this construction, signal processing time from the circuit 12 up to the deflector 2 is set previously in the circuit 10.
    • 9. 发明专利
    • EXPOSURE SYSTEM BY CHARGED BEAM
    • JPS5844718A
    • 1983-03-15
    • JP14342681
    • 1981-09-11
    • NIPPON TELEGRAPH & TELEPHONE
    • SHIMAZU NOBUOIDO SATOSHITSUYUZAKI HARUO
    • H01L21/027H01J37/302H01L21/30
    • PURPOSE:To improve productivity by driving a base by a command set in response to drawing and a simple feeding mode, adding the quantity of the beams deflected to a speed command and drawing information. CONSTITUTION:A switch SW is at OFF in a simple feeding mode forwarding the base 6 to the position of the starting of drawing, and driven DR by signals from a D/A converter in response to the information of a memory MS, and the base 6 is sent at predetermined high speed V1. The mode is changed into a drawing mode at the point of time t1, a control section CT turns the SW ON, deflection signals are added to speed signals from the D/A converter, the speed of the base reaches speed V2 corresponding to the quantity of the beams 3 deflected, and the prescribed density of projection is kept in response to the positions of projection. Drawing is completed at the point of time t2, the SW is turned OFF, the base 6 starts movement at V4=V1 in the +X direction through the state of suspension at speed V3 by a command corresponding to the information of the memory MS, and the same speed change as V2 and V3 is repeated. Accordingly, information can be drawn at the optimum movement-speed at all times by simple constitution, and productivity is largely improved.