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1. 发明专利

JPS60226121A ELECTRON BEAM DRAWING APPARATUS 失效
公开(公告)号：JPS60226121A
公开(公告)日：1985-11-11
申请号：JP8175684
申请日：1984-04-25
申请人： HITACHI LTD
发明人： IWASAKI TERUO , SAITOU NORIO
IPC分类号： H01L21/027 , G03F7/20 , H01L21/30
摘要： PURPOSE:To remarkably reduce over-hanging and easily realize high speed, highly accurate electron beam drawing apparatus by providing extruded over-hang preventing wall formed with a material having small rear scattering coefficient at the external circumference of semiconductor detection holder faced toward a sample. CONSTITUTION:An electron beam 1' entering the point Q on a sample 4 coated with resist generates reflected electron. A holder 11 is formed with a non-magnetic and conductive material such as carbon, Be, Al having small rear scattering coefficient and secondary electron emission coefficiency and moreover a circular or polygonal flat preventing wall A is formed at the lower end part facing to a sample 4 of holder 11. The preventing wall A has adequate thickness and is provided with electron beam passing hole c and four exposition holes 4 of detector 7. Moreover, the lowest end part thereof is formed in such nearer area as is not in contact with the sample 4 and a substance loaded on the movable stage. When the holder 11 thus formed is used, the reflected electron generated in the vicinity of the entering point Q of the electron beam 1' does not almost generate electrons when it collides with the part except for the semiconductor detector 7 (in total of four detectors).

2. 发明专利

JPS60121655A HIGH VOLTAGE ION DRIVING DEVICE 失效
公开(公告)号：JPS60121655A
公开(公告)日：1985-06-29
申请号：JP22686083
申请日：1983-12-02
申请人： HITACHI LTD
发明人： TOKIKUCHI KATSUMI , SAKUMICHI KUNIYUKI , OKADA OSAMI , KOIKE HIDEMI , SAITOU NORIO , OZASA SUSUMU
IPC分类号： H01J37/08 , H01J37/30 , H01J37/317 , H01L21/265 , H05H7/02 , H05H7/18 , H05H9/00
摘要： PURPOSE:To perform driving of a high-voltage current beam with good efficiency while simultaneously performing mass separation, acceleration and focusing by providing a high-frequency quadruplex pole between an ion source and a sample substrate for accelerating an ion beam taken out from the ion source. CONSTITUTION:A high voltage ion driving device is formed of an ion source 1, a tank 2 with a built-in high-frequency quadruplex pole and a driving chamber 3 with a sample substrate 5, while the high-frequency guadruplex pole 2 is formed of four electrodes 2a-2d having a periodically corrugated form so that the remaining two electrodes may be concave on the part where the two opposing electrodes are convex. Further, a single gap resonator 6 is inserted into the latter part of the quadruplex tank 2 so as to enable to use the same quadruplex tank 2 regarding the different kinds of ions. Accordingly, mass separation, acceleration and focusing can be simultaneously performed by the high-frequency quadruplex 2 thus enabling to drive the high-voltage current ion beam in the region of 100KeV- several MeV.

3. 发明专利

JPS6041226A CHARGED PARTICLE RAY DEVICE 失效
公开(公告)号：JPS6041226A
公开(公告)日：1985-03-04
申请号：JP12172884
申请日：1984-06-15
申请人： HITACHI LTD
发明人： SAITOU NORIO , OZASA SUSUMU , KURODA KATSUHIRO
IPC分类号： H01J37/147 , G03F7/20 , H01J37/00 , H01L21/027
摘要： PURPOSE:To correct deflection distortion of a wafer considering its curve by standardizing quantity of correction for deflection distortion on each reference surface obtained by scanning of charged particle rays on a mark which has at least two reference surfaces of different heights in the direction of light axis. CONSTITUTION:On the sample tray 2 on which a wafer is placed, two surface reference marks 10, 11 wherein the relative heights are known are provided and each mark is previously corrected its distortion of deflection before drawing. Assume that the reference marks on the upper and the lower surfaces are 10', 11', a sample is 12 and the height Z=Z value is obtained previously measuring height of evey field 13 to be drawn by a height detector (Z sensor) in a step-and-repeat process. Then, the correction factor of deflection distortion for the field can be obtained by interpolation. Data (U, V) corrected with the obtained correction factor are supplied to an electron beam device.

4. 发明专利

JPS5818853A CHARGED-PARTICLE APPLIED DEVICE 失效
公开(公告)号：JPS5818853A
公开(公告)日：1983-02-03
申请号：JP11502981
申请日：1981-07-24
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUOKA GENYA , SAITOU NORIO , KATOU YASUO , OZASA SUSUMU , MATSUDA KOREHITO
IPC分类号： H01J37/22 , H01J37/20 , H01J37/304 , H01J37/305 , H01L21/027
摘要： PURPOSE:To enable a beam deflection to be carried out under the optimum condition by varying the output of a beam-deflection D-A converter circuit during the pattern formation and the dimensional measurement of beams used under various conditions by providing the said D-A converter circuit with a function which can change the output. CONSTITUTION:As a means of varying the deflection output, a deflection-output varying device 22 is provided. The device 22 changes the amplitude of the output of a DA converter 11 analogously according to the cases of dimensional measurement of beams. The device 22 consists of, for example, an amplifier and a variable resistance. On the other hand, a signal processing device 18' subjects a signal sent from a detector such as a Faraday cup 14 to differentiation treatment by means of an amplifier 16, during the dimensional measurement of the beam. The device 18' is also decreases the digital deflection output by controlling the variable resistance or the like of the device 22. Owing to the above constitution, the increase of the signal noise caused by the above differentiation treatment can be suppressed even when the signal obtained from the Faraday cup 14 has noises caused by the non-linearity of the DA converter 11.

5. 发明专利

JPS57204127A DRAWING METHOD FOR PATTERN OF ELECTRON-RAY DRAWING DEVICE 失效
公开(公告)号：JPS57204127A
公开(公告)日：1982-12-14
申请号：JP8818581
申请日：1981-06-10
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： OZASA SUSUMU , SAITOU NORIO , YODA HARUO , MATSUDA KOREHITO , OOKUBO TSUNEO
IPC分类号： H01J37/304 , H01L21/027 , H01L21/30 , H01L23/544
摘要： PURPOSE:To draw the pattern by electron rays accurately while correcting the positions of drawing in blocks on the basis of the results of the detection of marks by dividing a large number of chips mounted onto a substrate into the blocks and forming the marks at every block. CONSTITUTION:A large number of the chips 2 are attached into a semiconductor wafer 1, and these chips 2 are divided into a plurality of the blocks 3 while the marks for detecting the positions are formed at every each block. When drawing the desired block, the position of the mark shaped to the block is detected, and the pattern is drawn by the electron rays while correcting the positions of the drawing of the chips in the block on the basis of the result of the detection. Accordingly, memory capacitance can largely be reduced because the same fields of the chips in the blocks are drawn continuously, and the accuracy of drawing is sharply improved because the positions can be corrected at block units.

6. 发明专利

JPS5248965A OBSERVATION EQUIPMENT OF ELECTRIC CHARGE BEAM SPOT SHAPE 失效
公开(公告)号：JPS5248965A
公开(公告)日：1977-04-19
申请号：JP12438775
申请日：1975-10-17
申请人： HITACHI LTD
发明人： SAITOU NORIO , YANAGISAWA AKIRA , MUNAKATA TADASUKE , ICHIHASHI MIKIO
IPC分类号： H01J37/04 , G01T1/29 , H01J37/153 , H01J37/26
摘要： PURPOSE:By use of an aperture containing a small hole, observation of electric charge beam spot shape becomes possible.

7. 发明专利

JPS51147208A DEFLECTOR OF CHARGED PARTICLE 失效
公开(公告)号：JPS51147208A
公开(公告)日：1976-12-17
申请号：JP7149775
申请日：1975-06-13
申请人： HITACHI LTD
发明人： MATSUOKA TSUNEYA , SAITOU NORIO
IPC分类号： H01J37/147 , G21K1/093 , H01J29/76 , H05H7/10
摘要： PURPOSE:To make high velocity deflection available.

8. 发明专利

JPS51147098A ELECTRIC CHARGE BEAM PROCESSING APPARATUS 失效
公开(公告)号：JPS51147098A
公开(公告)日：1976-12-17
申请号：JP7083675
申请日：1975-06-13
申请人： HITACHI LTD
发明人： SAITOU NORIO , ODA ISAMU
IPC分类号： H01J37/30 , B23K15/00 , H01L21/027
摘要： PURPOSE:To provide a mark detecting method using a simple circuit structure including one detector.

9. 发明专利

JPS6053021A ELECTRON BEAM DRAWING DEVICE 失效
公开(公告)号：JPS6053021A
公开(公告)日：1985-03-26
申请号：JP16035183
申请日：1983-09-02
申请人： HITACHI LTD
发明人： MURAI FUMIO , IWASAKI TERUO , SAITOU NORIO
IPC分类号： H01J37/305 , G03F7/20 , H01L21/027
摘要： PURPOSE:To reduce unnecessary irradiation to a sample to be drawn with a pattern to be generated according to multiple reflections at an electron beam drawing device by a method wherein the surface of the mirror body of the drawing device is covered with a material composed of the element or the compound of a low atomic number (the atomic number is 13 or less). CONSTITUTION:An electron beam 1 radiated from an electron gun is converged to be deflected by a final stage lens 2, and made to enter in a sample 3 to be drawn with a pattern. The reflected electron beam thereof is detected by detectors 9, and used for positional detection of a mark on the sample to be drawn with the pattern. At this time, the part facing to the sample to be drawn with the pattern of the final stage lens 2 is covered with an acrylic resin plate 6 of 0.5mm. thickness adhered with an aluminum film 7 of 100nm thickness, and the aluminum film 7 thereof is earthed electrically by fixing to the final stage lens 2 according to conductive screws 8. Moreover, the holders of the reflected electron beam detectors are also manufactured of acrylic resin 9, the surfaces thereof are covered with aluminum films 10 of 0.1mum thickness, and earthed electrically by fixing mechanically to the final stage lens 2. Accordingly, parasitic irradiation to the sample to be drawn with the pattern according to the electron beam reflected by two times can be reduced to 1/2 or less.

10. 发明专利

JPS59208720A Drawing method and apparatus 失效
标题翻译：绘图方法和装置
公开(公告)号：JPS59208720A
公开(公告)日：1984-11-27
申请号：JP8261583
申请日：1983-05-13
申请人： Hitachi Ltd
发明人： HAYAKAWA HAJIME , SAITOU NORIO , OZASA SUSUMU , MATSUOKA GENYA , MATSUZAKA TAKASHI
IPC分类号： H01L21/027 , G03F7/20 , H01J37/302 , H01L21/30
CPC分类号： H01J37/3026
摘要： PURPOSE:To improve drawing accuracy by dividing the desired drawing figure into a peripheral figure and internal figure and then giving different irradiation beams to them respectively. CONSTITUTION:The desired drawing figure L is divided into the peripheral figures N1-Nn and internal figures M1-Mn. Then, the irradiation time for drawing internal figures is set shorter than that for drawing the peripheral figures. Thereby, amount of irradiation for drawing internal figures is set smaller than that for drawing peripheral figures. As a result, lowering of size accuracy of figures resulting from electron scattering to the inside of resist and temperature rise can be prevented. Thereby the drawing accuracy can be improved.
摘要翻译：目的：通过将所需的图形划分为周边图形和内部图形，然后分别给予不同的照射光束，以提高绘图精度。构成：所需的图形L被分割成周边图形N1-Nn和内部图形M1-Mn。然后，用于绘制内部图形的照射时间被设定为比用于绘制外围图形的照射时间短。因此，用于绘制内部图形的照射量设定为小于用于绘制外围图形的照射量。结果，可以防止由于电子散射到抗蚀剂内部和温度升高而产生的图形的尺寸精度的降低。从而可以提高绘图精度。

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