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11. 发明专利

JPH1065145A CONDUCTIVE ATOMIC-SIZE THIN WIRE AND ATOMIC SIZE SWITCH 失效
公开(公告)号：JPH1065145A
公开(公告)日：1998-03-06
申请号：JP22100196
申请日：1996-08-22
申请人： HITACHI LTD
发明人： WATANABE SATOSHI , MURAYAMA YOSHIMASA , ONO YOSHIMASA , HASHIZUME TOMIHIRO , WADA YASUO
IPC分类号： H01L21/3205 , H01L21/20 , H01L29/06 , H01L29/66 , H01L29/80 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To micronize a wiring between elements of atomic size or nanometer size by causing an uncombined bond array, formed by removing an atomic array from a non-conductive surface, to adsorb other atoms, and controlling the number of atoms to be adsorbed. SOLUTION: A non-conductive substrate is formed by terminating a surface uncombined bond of an insulator or semiconductor 1 with appropriate atoms or molecules 2. Next, the terminating atoms 2 are removed, for example, by one atom or several atoms, in an array, from this substrate surface. Next, metal atoms 3 are supplied little by little to the substrate. At this time, to make a thin wire electroconciuctive, the metal atoms 3 of the same number as that of the uncombined bonds are adsorbed and then the metal atoms 3 are further supplied. When forming such thin a wire, the number of uncombined bond arrays formed by removing the terminating atoms is up to five, and the number of supplied atoms is effectively up to ten times the number of uncombined bonds, from the point of easy control on the number of atoms.

12. 发明专利

JPS6388790A THIN FILM EL DEVICE 失效
公开(公告)号：JPS6388790A
公开(公告)日：1988-04-19
申请号：JP23120286
申请日：1986-10-01
申请人： HITACHI LTD
发明人： ONO YOSHIMASA , KAWAKAMI HIDEAKI , FUYAMA MORIAKI , KIZAWA KENICHI
IPC分类号： H05B33/14 , H05B33/12

13. 发明专利

JPS62218475A ELECTROLUMINESCENT ELEMENT 失效
公开(公告)号：JPS62218475A
公开(公告)日：1987-09-25
申请号：JP6050386
申请日：1986-03-20
申请人： HITACHI LTD
发明人： SHIIKI MASATOSHI , KANEHISA OSAMU , YAMAMOTO AKIRA , FUYAMA MORIAKI , ONO YOSHIMASA , TAGUCHI KAZUO
IPC分类号： H05B33/14 , C09K11/56 , H05B33/12
摘要： PURPOSE:To obtain the titled element which has a luminescent color capable of enlarging a color reproduction range and gives a thin-film material exhibiting high brightness, by using a thin film of a luminescent layer having a specified composition contg. Ca, Sr, Eu and S. CONSTITUTION:An electroluminescent element having a thin film of a luminescent layer having a composition of the formula (wherein 0.3 or Sr to serve as an electron trap. Pref. the ratio of Ce concn. to Eu concn. is 0.001-0.1. When the Ce concn. is over the above range, yellowish green to bluish green light emission inherent to Ce clearly appears in addition to red light emission of Eu and luminescent color cannot be said to be red. Also the luminescent efficiency of Eu is lowered. When the Ce concn. is lower than the above range, effect of adding Ce can not be obtd.

14. 发明专利

JPH1126233A FERROMAGNETIC MATERIAL, MAGNETORESISTANCE EFFECT ELEMENT, AND ATOMIC LEVEL ELEMENT 失效
公开(公告)号：JPH1126233A
公开(公告)日：1999-01-29
申请号：JP18209697
申请日：1997-07-08
申请人： HITACHI LTD
发明人： HASHIZUME TOMIHIRO , WATANABE SATOSHI , ONOKI TOSHIYUKI , WADA YASUO , ICHIMURA MASAHIKO , ONO YOSHIMASA
IPC分类号： G11B5/00 , G11B5/39 , G11B5/62 , G11B5/64 , G11B5/74 , G11B5/855 , H01F1/00 , H01F10/00 , H01F10/08 , H01F10/32
摘要： PROBLEM TO BE SOLVED: To provide a ferromagnetic material the magnetic property of which can be controlled by means of an atomic-level structure or a nearby electrode and can be protected from the adsorption of impurities, when the material is embedded in an atomic layer and the spontaneous magnetization of which does not disappear, even if the material is cut into pieces of very small sizes. SOLUTION: An appropriate atomic-level array 1 is constituted on the surface 3 of a nonmagnetic substrate 2 by utilizing an atomic-level micro fabrication technique using the STM, etc., and the array 1 is covered with a nonmagnetic protective layer 4. When the array 1 is covered with the layer 4, the array 1 is made to reveal a ferromagnetic property by controlling the array 1 such that the peak of its density of states appears near the Fermi level.

15. 发明专利

JPH1125438A HIGH DENSITY MAGNETIC RECORDING MEDIUM 失效
公开(公告)号：JPH1125438A
公开(公告)日：1999-01-29
申请号：JP18209497
申请日：1997-07-08
申请人： HITACHI LTD
发明人： WATANABE SATOSHI , ONOKI TOSHIYUKI , ICHIMURA MASAHIKO , ONO YOSHIMASA , HASHIZUME TOMIHIRO , WADA YASUO
IPC分类号： G11B5/62 , G11B5/64 , G11B5/65 , G11B9/14 , H01F10/28
摘要： PROBLEM TO BE SOLVED: To make the magnetic domains finer and to realize an ultra high density magnetic recording medium by properly arranging same or different kinds of non-magnetic atoms on the surface of a non-magnetic substrate and providing ferromagnetism. SOLUTION: Each of bond columns is made of six uncoupled bonds. These columns are arranged in longitudinal and lateral directions with prescribed intervals, Ga atoms are adsorbed using a heat evaporating source and Ga atoms are selectively adsorbed to the portions of hydrogen uncoupled Si bond columns. In the surface structure obtained by the above atom operations.vapor deposition, Si atoms are used for substrate constituting atoms 31, Ga atoms are employed for non-magnetic atoms 32 and hydrogen atoms are used for atoms or molecules 33 which terminate the uncoupled bonds of the substrate. The Ga adsorbed portions, which are surrounded by complete hydrogen terminating portions, becomes a single magnetic domain ferromagnetic body and the peak of the state density appears in the vicinity of the Fermi level. Thus, this structure functions as a magnetic storage medium.

16. 发明专利

JPH10229226A SUPERCONDUCTING MATERIAL 失效
公开(公告)号：JPH10229226A
公开(公告)日：1998-08-25
申请号：JP3002597
申请日：1997-02-14
申请人： HITACHI LTD
发明人： SUGANO KAZUKO , ONOKI TOSHIYUKI , WATANABE SATOSHI , ICHIMURA MASAHIKO , ONO YOSHIMASA , HASHIZUME TOMIHIRO , WADA YASUO
IPC分类号： H01L39/24 , B82B1/00 , H01L29/06 , H01L39/12
摘要： PROBLEM TO BE SOLVED: To obtain a superconducting material and a superconducting thin wire which can be miniaturized in atomic sizes. SOLUTION: A superconducting material contains atoms 1, constituting an insulator or semiconductor substrate, appropriate atoms or molecules 2 which make the uncombined bond of the atoms 1 on the surface of the substrate nonconductive by terminating the bond, and appropriate trivalent or quadrivalent metallic atoms 3. The atoms 2 are extracted one by one by placing the substrate in an ultrahigh vacuum and impressing an appropriate voltage pulse upon the substrate, while the probe of a scanning tunneling microscope is brought nearer to the surface. The atoms 2 are removed in a row by repeating this operation by changing the position of the probe. After removing a row of hydrogen atoms from the silicon substrate, the metallic atoms 3 are gradually supplied to the removed structure by using a thermal evaporating source. Since the uncombined bond appears in the region, from which the hydrogen atoms are removed, the metallic atoms are selectively adsorbed to an uncombined bond region, and a superconducting material and superconducting thin wire of the metallic atoms 3 can be obtained. Therefore, such a superconducting material and superconducting thin wire, that can be miniaturized to atomic sizes and cause superconducting transition, can be realized.

17. 发明专利

JPH10208208A MINUTE MAGNETIC DEVICE 失效
公开(公告)号：JPH10208208A
公开(公告)日：1998-08-07
申请号：JP997097
申请日：1997-01-23
申请人： HITACHI LTD
发明人： ONOKI TOSHIYUKI , WATANABE SATOSHI , ICHIMURA MASAHIKO , ONO YOSHIMASA , HASHIZUME TOMIHIRO , WADA YASUO
IPC分类号： G01N37/00 , G01Q60/10 , G01Q80/00 , G11B5/00 , G11B5/127 , G11B5/74 , H01F10/08
摘要： PROBLEM TO BE SOLVED: To provide a minute magnetic device in which atomic clusters and atomic fine lines are arranged on a non-magnetic solid body surface by using micro fabrication techniques such as a scanning tunnel microscope(STM) and lithography and artificially generating ferromagnetism on the minute surface structure. SOLUTION: On the surface of a non-magnetic crystalline substrate 32, atomic clusters or atomic fine lines made of non-magnetic atoms 31 are arranged by the micro fabrication techniques such as an STM so that a sharp peak of the electron state density is provided in the vicinity of the Fermi level. By applying a voltage to a gate electrode 33, which is constituted on a portion of the substrate, the strength of the magnetism of the atomic clusters or the atomic fine lines is controlled. Thus, the magnetic recording head is provided to magnetically record information at the ultra high density of 10giga.bits/square inch to over 1peta.bits/square inch in a magnetic disk device.

18. 发明专利

JPH04246686A DRIVING CIRCUIT FOR MATRIX DISPLAY DEVICE 失效
公开(公告)号：JPH04246686A
公开(公告)日：1992-09-02
申请号：JP1127991
申请日：1991-01-31
申请人： HITACHI CHEMICAL CO LTD , HITACHI LTD
发明人： INOUE FUMIO , YOSHIDA TAKESHI , ONO YOSHIMASA , KOSAKA MASAHIRO
IPC分类号： G09G3/20 , G09G3/30
摘要： PURPOSE:To decrease the number of driver ICs in use and to use only one high-voltage power source to drive column-side and row-side electrodes. CONSTITUTION:Driver ICs 4, 2, and 3 of function constitution including switching circuits having a push-pull function are provided on the column-side and row-side electrodes of a thin film EL panel 1. The pull-up side common line of the drier IC 4 is connected to a positive modulation power source through a switch (diode 8) and the pull-down side common line is connected to a negative modulation power source through a switch 11; and the pull-up side common lines of the driver ICs 2 and 3 are connected to the positive modulation power source through a switch 9, a write power source, and a switch 10 and the pull-down side common lines are connected to a reference potential.

19. 发明专利

JPH0251891A THIN FILM EL ELEMENT 失效
公开(公告)号：JPH0251891A
公开(公告)日：1990-02-21
申请号：JP19990388
申请日：1988-08-12
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , ONO YOSHIMASA
IPC分类号： H05B33/14 , H05B33/12 , H05B33/18
摘要： PURPOSE:To make a corresponding time of CaS:Eu red EL element to be reduced by adding an element which emits light strongly absorbed to Eu and CaS:Eu such as Ce, Pr, Tm, etc., to a CaS:Eu emission layer. CONSTITUTION:An element where an emission layer 4 consisting of a matrix material CaS and a luminescence center Eu is sandwiched in insulting layers 3 and 5 which is a red emitting EL element emitting with application of AC voltage to the emission layer 4 through an electrode 6 installed on the surface of the insulating layer 5 and makes EL emission in Eu and CaS such as Ca, Pr, Tm, etc., whose emitting light energy is within the range of approx. 2.3-2.6eV wherein CaS:Eu is strongly absorbed is added. Thereby, the corresponding time of CaS:Eu element is shortened to 10ms-100ms.

20. 发明专利

JPH01149094A DRIVING OF THIN FILM EL ELEMENT 失效
公开(公告)号：JPH01149094A
公开(公告)日：1989-06-12
申请号：JP30754687
申请日：1987-12-07
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , ONO YOSHIMASA
IPC分类号： G09G3/30 , G09G3/20
摘要： PURPOSE: To improve luminance several times in comparison with a conventional driving waveform by optimizing the form of rising part of an AC driving waveform. CONSTITUTION: The driving waveform is repeated in a claim cycle TF and one pulse voltage waveform is a waveform that has a pulse width tp and a pulse height value V, steeply rises up to an initial impressing voltage V1 lower than a light emitting threshold voltage Vth at time t=t1 , increases at a comparatively low fixed through rate dV/dt later, reaches the pulse height value V at time t=t2 , keeps the pulse height value V later during holding time th=t3 -t2 until time t=t3 and steeply falls down to V1 =0 at the time t=t3 . Thus, without changing the wave height value, frequency and pulse width of an AC driving pulse voltage, the luminance of an EL element is improved several times in comparison with the conventional driving waveform.

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