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1. 发明专利

JP2008287631A Computer to be deployed, deployment system and deployment method 审中-公开
标题翻译：计算机部署，部署系统和部署方法
公开(公告)号：JP2008287631A
公开(公告)日：2008-11-27
申请号：JP2007133825
申请日：2007-05-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ANDO MASAHIKO , KATO AKIRA , GOTO SUMIO
IPC分类号： G06F9/445
CPC分类号： G06F9/45533 , G06F8/63
摘要： PROBLEM TO BE SOLVED: To enable a deployed server to start a boot in a short time. SOLUTION: In the deployed computer to be connected to a storage device having a copy source logic disk storing a boot disk image, a disk mapping processing part of the deployed computer accesses, upon receipt of an I/O request from the deployed computer to the storage device, the copy source logic disk of the storage device, when requested to read the boot disk image, and accesses a copy source logic disk used for writing data on the boot disk image, when requested to write the boot disk image. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：使部署的服务器能够在短时间内启动启动。解决方案：在部署的计算机中，要连接到具有存储引导磁盘映像的复制源逻辑磁盘的存储设备，部署计算机的磁盘映射处理部分在接收到已部署的I / O请求时访问计算机到存储设备，存储设备的复制源逻辑磁盘，当请求读取引导磁盘映像时，并且在请求写入引导磁盘映像时访问用于在引导磁盘映像上写入数据的复制源逻辑磁盘。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2007311442A Organic thin film transistor, method and apparatus for manufacturing the same 审中-公开
标题翻译：有机薄膜晶体管，其制造方法和装置
公开(公告)号：JP2007311442A
公开(公告)日：2007-11-29
申请号：JP2006137220
申请日：2006-05-17
申请人： Hitachi Ltd , Hitachi Via Mechanics Ltd , 日立ビアメカニクス株式会社 , 株式会社日立製作所
发明人： DOI AKIRA , INOUE TOMOHIRO , ANDO MASAHIKO , KISHI MASAKAZU
IPC分类号： H01L29/786 , H01L51/05 , H01L51/40
CPC分类号： H01L51/0004 , H01L51/0055 , H01L51/0545 , H01L51/105
摘要： PROBLEM TO BE SOLVED: To achieve high-speed switching operation of a transistor with TFT having large carrier mobility.
SOLUTION: An organic thin film transistor manufacturing apparatus 100 includes a coating device 50 for coating a semiconductor material 2 and a vessel 15 for accommodating the coating device. A gas for preventing oxidation is supplied to the vessel from a gas supplying device 12. The coating semiconductor material is dried with the light 22 having passed a filter 21 generated by a light radiating device 20. An organic thin film transistor (TFT) 1 is placed on a stage 10. Films of drain electrode 4 and source electrode 5 are formed on the upper surface of TFT. When the drain electrode and source electrode are irradiated with the lights of the identical wavelength, temperature distribution is generated thereby on the upper surface of the organic thin film transistor.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了实现具有大载流子迁移率的TFT的晶体管的高速开关操作。解决方案：有机薄膜晶体管制造装置100包括用于涂覆半导体材料的涂覆装置50和用于容纳涂覆装置的容器15。用于防止氧化的气体从气体供给装置12供应到容器。涂覆半导体材料被通过由光辐射装置20产生的滤光器21的光22干燥。有机薄膜晶体管（TFT）1是放置在载物台10上。在TFT的上表面上形成漏电极4和源电极5。当用相同波长的光照射漏电极和源电极时，由此在有机薄膜晶体管的上表面上产生温度分布。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005093542A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005093542A
公开(公告)日：2005-04-07
申请号：JP2003321870
申请日：2003-09-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAWASAKI MASAHIRO , IMAZEKI SHUJI , ANDO MASAHIKO
IPC分类号： H01L51/05 , H01L23/62 , H01L29/786 , H01L51/00 , H01L51/30
CPC分类号： H01L51/0545 , H01L51/0021 , H01L51/0037 , H01L51/0052 , H01L51/0516
摘要： PROBLEM TO BE SOLVED: To reduce the cost of a semiconductor device such as an indicating device, an ID tag and a sensor by using an organic TFT of a bottom contact type for a switching element.
SOLUTION: A semiconductor layer of a bottom contact type organic TFT is formed of a polycrystalline material. A taper width in the channel lengthwise direction of a source-drain electrode is made shorter than the mean particle diameter of a semiconductor crystal which grows on the source-drain electrode. On, the shape of the side surface of the channel side of the source-drain electrode of the bottom contact type organic TFT is formed so as to be a convex shape relative to a substrate surface. On, an organic compound layer which is different from the semiconductor layer is interposed between the source-drain electrode and the semiconductor layer of the bottom contact type organic TFT at the thickness of at least 1 Å and at most 10 Å.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过使用用于开关元件的底部接触型的有机TFT来降低诸如指示装置，ID标签和传感器的半导体器件的成本。解决方案：底部接触型有机TFT的半导体层由多晶材料形成。源极 - 漏极电极的沟道长度方向上的锥形宽度比在源极 - 漏极电极上生长的半导体晶体的平均粒径短。在底接触型有机TFT的源 - 漏电极的沟道侧的侧表面的形状形成为相对于衬底表面的凸形。在与源极 - 漏极电极和底部接触型有机TFT的半导体层之间插入不同于半导体层的有机化合物层，其厚度至少为至少为Å。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004118132A Direct-current driven display device 审中-公开
公开(公告)号：JP2004118132A
公开(公告)日：2004-04-15
申请号：JP2002284711
申请日：2002-09-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KAWASAKI MASAHIRO , MIKAMI YOSHIAKI , MURAKAMI HAJIME , ANDO MASAHIKO , KIZAWA KENICHI , KONNO TETSUTOYO
IPC分类号： H01L51/50 , G09G3/20 , G09G3/30 , G09G3/32 , H01L21/336 , H01L29/786 , H05B33/14
CPC分类号： G09G3/3233 , G09G2300/0417 , G09G2300/043 , G09G2300/0809 , G09G2300/0842 , G09G2310/0254 , G09G2310/0256 , G09G2310/06 , G09G2320/043
摘要： PROBLEM TO BE SOLVED: To provide a low-cost large-screen DC driven display device which is prevented from deterioration in luminance owing to a threshold shift of a switching element of a pixel. SOLUTION: Each pixel has: a light emitting element 201 which emits light with a current; a 1st switching element Tr1 which fetches luminance information from a signal line Ld into the pixel; and a 2nd switching element Tr2 which controls the amount of a current supplied to the light emitting element according to the fetched luminance information. The luminance information is fetched by taking a signal voltage of the signal line Ld in when the scanning line Lg connected to the pixel is selected and the luminance information fetched into the pixel is held by a capacitor even after the scanning line connected to the pixel is not selected any more. One specified cycle in which new luminance information is fetched next from the signal line consists of a pixel illumination period T1 and a threshold control period T2 wherein threshold control voltage having the opposite polarity to the signal voltage of the luminance information is applied to the gate electrode of the 2nd switching element. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003050404A Active matrix type liquid crystal display device 审中-公开
标题翻译：主动矩阵式液晶显示装置
公开(公告)号：JP2003050404A
公开(公告)日：2003-02-21
申请号：JP2001237989
申请日：2001-08-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ANDO MASAHIKO , KAWASAKI MASAHIRO , HIYAMA IKUO , TSUMURA MAKOTO
IPC分类号： G02F1/1368 , G02F1/133 , G09F9/30 , G09F9/35 , G09G3/20 , G09G3/36 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an active matrix type liquid crystal display device capable of increasing the aperture ratio of each pixel by reducing constitutional elements of the pixel at the time of performing image bound separation display.
SOLUTION: This active matrix type liquid crystal display device is provided with first and second transparent substrates and a liquid crystal layer which is held between the both transparent substrates and the first substrate has a plurality of scanning lines 5, and a plurality of selection lines 6 to 9 and a plurality of signal lines 10 which are arranged by being crossed with respective scanning lines 5 and thin film transistors 12 and pixel electrodes 13 which are arranged at intersection parts of the scanning lines 5 and the selection lines 6 to 9 and the second substrate has counter electrodes 13 which are disposed to face oppositely with the pixel electrodes 13 and a plurality of common lines 11 and, moreover, respective thin film transistors 12 have floating gates and first control electrodes and second electrodes are connected respectively to the scanning lines 5 and second control lines 6 to 9 and first main electrodes and second main electrodes are connected respectively to signal lines 10 and pixel electrodes 13 and the counter electrodes 13 are connected to corresponding common lines 11 and electric fields are applied between the pixel electrodes 13 and the counter electrodes 13 and picture display is performed by controlling alignment states of the liquid crystal layer with these electric fields.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种有源矩阵型液晶显示装置，其能够通过减少进行图像界定分离显示时的像素的构成要素来提高各像素的开口率。解决方案：该有源矩阵型液晶显示装置设置有第一和第二透明基板，并且保持在两个透明基板之间的液晶层和第一基板具有多条扫描线5和多条选择线6 9以及与扫描线5和选择线6〜9的交叉部分配置的各扫描线5和薄膜晶体管12以及像素电极13交叉排列的多个信号线10，第二衬底具有相对于像素电极13和多个公共线11相对设置的对置电极13，而且，各个薄膜晶体管12具有浮置栅极，第一控制电极和第二电极分别连接到扫描线5 并且第二控制线6至9和第一主电极和第二主电极分别连接到s 点阵线10和像素电极13和对置电极13连接到对应的公共线11，并且在像素电极13和对置电极13之间施加电场，并且通过控制液晶层的取向状态来控制图像显示电场。

6. 发明专利

JP2002305306A ACTIVE MATRIX TYPE DISPLAY DEVICE 失效
公开(公告)号：JP2002305306A
公开(公告)日：2002-10-18
申请号：JP2001106611
申请日：2001-04-05
申请人： HITACHI LTD
发明人： KAWASAKI MASAHIRO , ANDO MASAHIKO , WAKAGI MASATOSHI
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/316 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor that stably operates with a low off-current even when an organic protective insulating film and picture element electrodes are arranged on the transistor, and to provide an active matrix type liquid crystal display device using the transistor. SOLUTION: The active matrix type liquid crystal display device uses the thin film transistor in its displaying section or driving section as a switching element. The thin film transistor is constituted by successively laminating a gate electrode, gate insulating film, semiconductor layer, drain electrode, and source electrode upon an insulating substrate. The semiconductor layer has a porous surface on the protective insulating film side.

7. 发明专利

JP2001201766A MANUFACTURING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2001201766A
公开(公告)日：2001-07-27
申请号：JP2000009179
申请日：2000-01-18
申请人： HITACHI LTD
发明人： NAKAYAMA TAKANORI , OTA MASUYUKI , ANDO MASAHIKO
IPC分类号： G09F9/30 , G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/00 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To reduce manufacturing man-hours. SOLUTION: A liquid crystal display device is constituted so that a signal from a drain signal line is applied to a pixel electrode through a drain electrode and a source electrode formed on an upper layer of a semiconductor layer by supply of a scan signal from a gate electrode placed to a lower layer for the semiconductor layer of a thin film transistor to respective pixel areas of a liquid crystal side surface of one side substrate of respective substrates oppositely arranged through a liquid crystal, and the manufacture of this device consists of a process of forming a successive laminated body of the semiconductor layer and a first conductive layer with the same pattern on a forming area of the drain signal line and the forming area of the thin film transistor connected to each other and a process of separating the drain electrode from the source electrode by using the same mask after a second conductive film is formed and forming the pixel electrode connected to the source electrode.

8. 发明专利

JP2000269504A SEMICONDUCTOR DEVICE, ITS MANUFACTURE AND LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2000269504A
公开(公告)日：2000-09-29
申请号：JP6952999
申请日：1999-03-16
申请人： HITACHI LTD
发明人： ISHIHARA SHINGO , WAKAGI MASATOSHI , ANDO MASAHIKO
IPC分类号： H01L51/05 , G02F1/136 , G02F1/1368 , H01L21/311 , H01L21/336 , H01L27/28 , H01L29/49 , H01L29/786 , H01L51/00 , G02F1/1365
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor in which a semiconductor channel region is patterned. SOLUTION: On a glass substrate 101, a gate electrode 102, a gate insulting film 103, a source electrode 104, and a drain electrode 105 are formed, thereon a patterned insulating film is formed, and a region 110 on the gate electrode is removed. An organic semiconductor film is vapor-deposited on the removed region. An organic semiconductor film 107, formed in the region 110 where the patterned insulating film was removed, turns into a channel region and is isolated from the organic semiconductor film 108 on a patterned insulating film 106. That is, the organic semiconductor channel region is patterned in equal size as the gate electrode.

9. 发明专利

JPH11119252A ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11119252A
公开(公告)日：1999-04-30
申请号：JP28375197
申请日：1997-10-16
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , YAMAMOTO TSUNENORI , FUKAYA RITSUO , WAKAGI MASATOSHI , NISHIMURA ETSUKO
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To increase the aperture ratio and the uniformness of cell gaps by overlapping arranging plural opposing electrodes above plural signal lines and plural active elements through an insulation layer. SOLUTION: An opposing electrode 107 is arranged above a signal wiring 103 and a TFT 216 through an insulating passivation film 205. A region, which is occupied by the wiring 103, is included in the region which is located on a scanning wiring 101 corresponding to the end section of the electrode 107 and occupied by the electrode 107 and the wiring 101. Moreover, the electrode 107 is connected to the wiring 101 through the contact holes which continuously opened on the film 205 and a gate insulating layer 201. Thus, the black matrix, which light shields the back end section of the lines 103, is no longer required and the TFT 216 is light shielded by the opposing electrode. Furthermore, no light shielding is required because there is no light leak at the back end section of the wiring 101.

10. 发明专利

JPH10253982A TRANSVERSE ELECTRIC FIELD SYSTEM ACTIVE MATRIX TYPE LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH10253982A
公开(公告)日：1998-09-25
申请号：JP5926397
申请日：1997-03-13
申请人： HITACHI LTD
发明人： ANDO MASAHIKO , FUKAYA RITSUO , YAMAMOTO TSUNENORI , WAKAGI MASATOSHI
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/136 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To make it possible to avoid charge accumulation and to assure good image quality, by using holding capacitor parts having a reversible charge accumulation characteristic. SOLUTION: The holding capacitor part 112 is formed as the structure obtd. by holding a first gate insulating layer 13 as an insulating layer for a capacitor consisting of a silicon nitride film with a source electrode 18 as a source electrode for the capacitor and a gate electrode 12 as a gate executed for the capacitor. If the holding capacitor part is constituted in such a manner, the barrier effect of a second gate insulating layer 14 consisting of a silicon oxide film disappears and, therefore, the electrons implanted into the silicon nitride film (the first gate insulating layer 13) return to the semiconductor layer 15 (including drain electrode 17 and source electrode 18) side when the threshold control voltage attains zero and the charge accumulation in the holding capacitor part 112 is averted. Accordingly, since the internal voltage occurring in the charge accumulation is no longer impressed on liquid crystals, the image defects, such as flicker and after-images, do not arise any more.

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