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11. 发明专利

JPS52109371A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS52109371A
公开(公告)日：1977-09-13
申请号：JP2515076
申请日：1976-03-10
申请人： HITACHI LTD
发明人： TAMAOKI YOUICHI , ISOMAE SEIICHI , KOGIRIMA MASAHIKO , SHINTANI AKIRA , MAKI MICHIYOSHI
IPC分类号： H01L21/306 , H01L21/22 , H01L21/302
摘要： PURPOSE:To obtain the mask of the double-layer structure that suits for the use of the selective oxidation the selected diffusion and the selection etching; which are composed with the upper film of Si nitride film having great masking action and with the lower film of Ge.Si nitride film having the skew mitigative action.

12. 发明专利

JPS5289366A INTENSITY MEASURING DEVICE FOR DIFFRACTED X RAY 失效
公开(公告)号：JPS5289366A
公开(公告)日：1977-07-26
申请号：JP493976
申请日：1976-01-21
申请人： HITACHI LTD
发明人： ISOMAE SEIICHI , MAKI MICHIYOSHI
IPC分类号： G01N23/205 , G01N23/20
摘要： PURPOSE:To improve the quality of section topography by the use of a device, in which a lits and a dry plate support are made integral.

13. 发明专利

JPS5228870A METHOD FOR PRODUCTION OF THIN MEMBRANE 失效
公开(公告)号：JPS5228870A
公开(公告)日：1977-03-04
申请号：JP10401175
申请日：1975-08-29
申请人： HITACHI LTD
发明人： ISOMAE SEIICHI , TAMAOKI YOUICHI , MAKI MICHIYOSHI
IPC分类号： H01L21/52 , C23C14/02 , C23C14/22 , C23C16/44 , H01L21/28 , H01L21/285 , H01L21/31 , H01L21/318
摘要： PURPOSE:Different method, such as the CVD method and the spatter method, is applied alternately to form a thin membrane without curvature on the substrate.

14. 发明专利

JPS51134389A PROCESS FOR PRODUCING A SEMIICONDUCTOR CRYSTAL 失效
公开(公告)号：JPS51134389A
公开(公告)日：1976-11-20
申请号：JP5858975
申请日：1975-05-19
申请人： HITACHI LTD
发明人： KURODA KEIYOSHI , KOZUKA KOUJI , MATSUDA MASATOSHI , MAKI MICHIYOSHI
IPC分类号： C30B15/24 , H01L21/208
摘要： PURPOSE:A process for making a semi-conductor crystal into a strip form using a slit.

15. 发明专利

JPS6191434A Clean room 失效
标题翻译：整理房间
公开(公告)号：JPS6191434A
公开(公告)日：1986-05-09
申请号：JP21137684
申请日：1984-10-11
申请人： Hitachi Ltd , Hitachi Plant Eng & Constr Co Ltd
发明人： SAIKI ATSUSHI , SUZUKI MICHIO , SUNAMI HIDEO , ASAI SHOJIRO , MAKI MICHIYOSHI , ASAMI KINICHIRO
IPC分类号： F24F7/06 , F24F3/16 , F24F7/10
CPC分类号： F24F7/10 , F24F3/161
摘要： PURPOSE:To prevent dust from diffusing from a region where dust is liable to be generated to a region where cleanness should be maintained by providing a difference in the air flow speeds depending on the character of the region so that the blow-off speed of the air flow in a passing region becomes greater than that in a working region. CONSTITUTION:When as a blow-off air flow from a filter 4, the blow-off speed in a working region 6a is made larger than a blow-off air flow speed in a passing region 6b, air on the low air flow side is induced to the high air flow side. Thus, dust is diffused by offsetting to the high air flow speed side, and air on the low speed side has a low dust concentration. Hence, diffusion of dust to the low air flow side cannot almost be observed. As a result, the yield of the product and reliability therefor can be improved.
摘要翻译：目的：为了防止灰尘从易于产生灰尘的区域扩散到通过根据该区域的特性提供空气流速的差异来保持清洁度的区域，使得吹扫速度通过区域中的空气流量变得大于工作区域中的空气流量。构成：作为来自过滤器4的吹出空气流，工作区域6a中的吹出速度大于通过区域6b中的吹出空气流速，低气流侧的空气为诱导到高气流侧。因此，灰尘通过偏移到高空气流速侧而扩散，低速侧的空气的灰尘浓度低。因此，几乎不能观察到灰尘向低空气流侧的扩散。结果，可以提高产品的产量和可靠性。

16. 发明专利

JPS57128062A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS57128062A
公开(公告)日：1982-08-09
申请号：JP1294381
申请日：1981-02-02
申请人： HITACHI LTD
发明人： KOBAYASHI YUTAKA , SUZUKI TAKAYA , MAKI MICHIYOSHI , NAKAMURA MINORU
IPC分类号： H01L27/08 , H01L21/20 , H01L21/86 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain the semiconductor device having a high working speed by a method wherein, in the case of an SOS structure semiconductor device, the face direction of an Si single crystal layer is set at{100}or{110}, and the area containing the exposed surface of the single crystal layer consists of the regrown layer whereon tensile stress has been applied. CONSTITUTION:A P type Si single crystal layer 2 is grown in vapor-phase on a sapphire supporting plate 1 with the face direction of the surface of{100} or{110}, and a regrown layer in the state wherein tensile stress is applied by irradiating a laser beam 30 on the Si single crystal layer 2. Then, an Si single crystal 210 is formed by performing a selective etching using a KOH solution, the exposed part is covered by the laminating material consisted of an SiO2 film 201 and an Si polycrystalline layer 202, the section to be used as a gate is remained, and laminating material on the other section is removed. Subsequently, an N type source region 211 and a drain region 212 are formed on the exposed part of an island 210 by performing an ion implantation using a gate as a mask, these regions are covered by an SiO2 film 203, an aperture is opened, source and drain electrodes 204 and 205 are installed, and the gate is enveloped by an SiO2 film 207.

17. 发明专利

JPS5432974A MANUFACTURING DEVICE FOR SEMICONDUCTOR 失效
公开(公告)号：JPS5432974A
公开(公告)日：1979-03-10
申请号：JP9866577
申请日：1977-08-19
申请人： HITACHI LTD
发明人： SHINTANI AKIRA , MAKI MICHIYOSHI
IPC分类号： H01L21/31 , C23C16/458
摘要： PURPOSE:To make the thickness of a film uniform in a CVD method using a lateral reaction tube, by supplying reactive gas even from the sample-setting part of a sample table.

18. 发明专利

JPS53105366A MANUFACTURE FOR SEMICONDUCTOR ELEMENT SUBSTRATE 失效
公开(公告)号：JPS53105366A
公开(公告)日：1978-09-13
申请号：JP1924677
申请日：1977-02-25
申请人： HITACHI LTD
发明人： KOZUKA KOUJI , KURODA SATOYOSHI , MATSUDA MASATOSHI , KISHINO SEIGOU , MAKI MICHIYOSHI
IPC分类号： C30B25/02 , H01L21/205 , H01L21/208 , H01L31/00 , H01L31/04
摘要： PURPOSE:To manufacture the substrate crystal of high quality, by moving the substrate which forms no compound or solid solution with the semicondcutor crystal in melting condition and is coated with harmless metal of low melting point, in a given speed.

19. 发明专利

JPS5348477A FORMATION METHOD OF PHOTORESIST MASK 失效
公开(公告)号：JPS5348477A
公开(公告)日：1978-05-01
申请号：JP12277376
申请日：1976-10-15
申请人： HITACHI LTD
发明人： NANBA MITSUO , UEHARA KEIJIROU , TAMAOKI YOUICHI , HONMA KOUJI , HIGUCHI HISAYUKI , MAKI MICHIYOSHI
IPC分类号： H01L21/312 , G03F7/16 , H01L21/027 , H01L21/314 , H01L21/76
摘要： PURPOSE:To perform flattening by coating photoresist over the entire surface of a specimen, etching off the resist corresponding to the resist film thickness over the bulged part outside grooves and heating and fluidizing the resist in the grooves to allow it creep up to the top end of the sloped surface of the grooves.

20. 发明专利

JPS52154364A FORMATION OF SELECTIVE ETCHING MASK 失效
公开(公告)号：JPS52154364A
公开(公告)日：1977-12-22
申请号：JP7107176
申请日：1976-06-18
申请人： HITACHI LTD
发明人： TAMAOKI YOUICHI , HONMA KOUJI , NANBA MITSUO , UEHARA KEIJIROU , HIGUCHI HISAYUKI , MAKI MICHIYOSHI
IPC分类号： H01L21/306 , H01L21/302
摘要： PURPOSE:To form a selective etching mask by leaving the substance for mask within grooves through the use of the grooves formed on a wafer surface and etching off the thin film outside the grooves.

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