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11. 发明专利

JP2002223070A METHOD FOR MANUFACTURING METAL PLATE FOR METAL CORE PRINTED WIRING BOARD AND METHOD FOR MANUFACTURING METAL CORE PRINTED WIRING BOARD 失效
公开(公告)号：JP2002223070A
公开(公告)日：2002-08-09
申请号：JP2001019919
申请日：2001-01-29
申请人： HITACHI METALS LTD
发明人： SATO KOJI , KUMAMOTO SHINGO , DATE MASAYOSHI
IPC分类号： B21D28/00 , H05K3/40 , H05K3/44
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a metal plate for a metal core printed wiring board and a method for manufacturing the metal core printed wiring board which make simple and inexpensive a process of manufacturing the metal core printed wiring board and also increase the density of a metal window for a through hole of a metal plate for a metal core and insulation reliability. SOLUTION: As for the manufacturing method for the metal plate used for the metal core printed wiring board, this manufacturing method is provided for the metal plate for the metal core printed wiring board which form the metal window for the through hole of the metal plate by punching.

12. 发明专利

JP2002110860A RESIN BONDING DOUBLE-SIDED METAL STRUCTURE 失效
公开(公告)号：JP2002110860A
公开(公告)日：2002-04-12
申请号：JP2000302496
申请日：2000-10-02
申请人： HITACHI METALS LTD
发明人： OKIKAWA SUSUMU , KUMAMOTO SHINGO
IPC分类号： B32B15/08 , H01L23/12 , H01L23/14
摘要： PROBLEM TO BE SOLVED: To provide improved BGA-and CSP-type semiconductor packages that matches a thermal coefficient of expansion, has excellent reliability and a superior handling property in manufacture and inspection, and can divert the manufacture/inspection facilities of a lead-frame-type semiconductor package. SOLUTION: In this resin bonding double-sided metal structure, the metal plate with a thickness of 50 to 100 μm, conductive foil with a thickness of 5 to 18 μm are inserted via a resin layer with a thickness of 5 to 60 μm for bonding.

13. 发明专利

JP2001073047A LOW THERMAL EXPANSION COPPER ALLOY, SEMICONDUCTOR DEVICE USING THE SAME AND PRODUCTION OF LOW THERMAL EXPANSION COPPER ALLOY 失效
公开(公告)号：JP2001073047A
公开(公告)日：2001-03-21
申请号：JP25123099
申请日：1999-09-06
申请人： HITACHI METALS LTD
发明人： KUMAMOTO SHINGO , HOSODA SHIGEMI
IPC分类号： B23K20/00 , B32B15/01 , C22C1/05 , C22C9/00
摘要： PROBLEM TO BE SOLVED: To control the thermal expanding characteristics of the alloy to those of the material to be joined an to obtain excellent heat radiability by providing the surface of a copper alloy with a two phase metallic structure composed of copper and copper oxide with a layer of copper only. SOLUTION: Copper oxide is preferably composed of Cu2O. In the mother phase of copper and copper oxide grains having low thermal expanding characteristics composing the two phase metallic structure, by changing the volume ratio of copper oxide, the control of the thermal expanding characteristics is possible. Using a powdery mixture of copper powder and copper oxide powder, sinetring is executed in a reducing atmosphere, and a layer of copper only is formed on the surface side of the copper alloy with the two phase metallic structure whose inside is composed of copper and copper oxide by reduction. Or, using a powdery mixture of copper powder and copper oxide powder, press-sintering is executed, simultaneously, a board made of copper or a vessel made of copper arranged at the outside of the whole of the powdery mixture and the powdery mixture sintered body are joined to obtain a low thermal expansion copper alloy in which a layer of copper only is formed on the surface of the copper alloy having the two phase structure composed of copper and copper oxide.

14. 发明专利

JP2011026697A Method for producing metallic microsphere 有权
标题翻译：生产金属微球的方法
公开(公告)号：JP2011026697A
公开(公告)日：2011-02-10
申请号：JP2010069860
申请日：2010-03-25
申请人： Hitachi Metals Ltd , 日立金属株式会社
发明人： KUMAMOTO SHINGO
IPC分类号： B22F9/08 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide a method for producing metallic microspheres reduced in depressions caused on the surfaces of metallic microspheres and with the characteristics of surface smoothness in order to improve an electrical connection reliability, in the achievement of multilayering a wiring board, micronizing a connection terminal part, or the like by using the metallic microspheres.
SOLUTION: In the method for producing metallic microspheres, Cu droplets are subjected to spherical solidification in an atmosphere comprising 10 to 800 vol.ppm oxygen, and the balance inert gas. Further, preferably, the Cu droplets are formed by dropping Cu molten metal to which pressure and vibration are applied from an orifice.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决问题：为了提供一种在金属微球表面上形成的减少凹陷的金属微球的制造方法和具有表面平滑性的特性，以提高电连接的可靠性，在实现多层布线基板，通过使用金属微球使连接端子部件等微粉化。解决方案：在金属微球的制造方法中，将Cu液滴在含有10〜800体积ppm的氧气和余量的惰性气体的气氛中进行球化固化。此外，优选地，通过滴下从孔口施加压力和振动的Cu熔融金属来形成Cu液滴。版权所有（C）2011，JPO＆INPIT

15. 发明专利

JP2006231381A Molten metal supply apparatus 审中-公开
标题翻译：金属供应设备
公开(公告)号：JP2006231381A
公开(公告)日：2006-09-07
申请号：JP2005051270
申请日：2005-02-25
申请人： Hitachi Metals Ltd , 日立金属株式会社
发明人： SATO KOJI , ITOGA KENJI , KUMAMOTO SHINGO , IKEDA TAKAFUMI , AKISHIGE MANABU , NISHI YUICHI
IPC分类号： B22D39/02 , B22D41/01
摘要： PROBLEM TO BE SOLVED: To provide a small-sized molten metal supply apparatus which replaces the atmosphere of an ingot and melt the ingot to produce molten metal and supplies the molten metal to a following process, and in which variation arising at charging a master alloy and fluctuation in pressure by increasing the capacity do not influence the quality of molten alloy.
SOLUTION: The molten metal supply apparatus is provided with an ingot additional charging part and a melting chamber connected to the lower part of the ingot additional charging part, the ingot additional charging part has a insertion chamber in which the ingot is inserted and held, and a replacing chamber positioned below the insertion chamber and connected to the melting chamber, the ingot is introduced into the melting chamber after replacing the atmosphere, with an inlet side shielding member arranged between the insertion chamber and the replacing chamber, and an outlet side shielding member arranged between the replacing chamber and the melting chamber and a feeding device for introducing the ingot from above into the melting chamber positioned below with a controlled feeding speed.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种小型熔融金属供给装置，其替代锭的气氛并熔化锭以产生熔融金属并将熔融金属供应到后续过程中，并且在充电中产生变化主合金和通过增加容量的压力波动不影响熔融合金的质量。解决方案：熔融金属供给装置设置有锭附加充电部和与锭附加充电部的下部连接的熔化室，铸锭附加充电部具有插入槽，插入该铸锭，以及位于插入室下方并连接到熔化室的置换室，在更换大气之后，将铸锭引入到熔化室中，其中入口侧屏蔽构件设置在插入室和更换室之间，并且出口设置在所述更换室和所述熔化室之间的侧面屏蔽构件以及用于将锭从上方引入到以受控进给速度定位在下方的熔化室中的进料装置。版权所有（C）2006，JPO＆NCIPI

16. 发明专利

JP2002292787A LAMINATED METAL WITH RESIN AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002292787A
公开(公告)日：2002-10-09
申请号：JP2001093718
申请日：2001-03-28
申请人： HITACHI METALS LTD
发明人： KUMAMOTO SHINGO , SHOJI TATSUYA
IPC分类号： B32B15/08 , B29C65/44 , H05K3/00 , H05K3/38
摘要： PROBLEM TO BE SOLVED: To provide a laminated metal with a resin wherein a resin layer becoming an insulating layer and a second metal layer becoming a carrier layer have stable bonding force within an industrially sufficiently practicable technical range, and a method for manufacturing the same. SOLUTION: In the laminated metal with the resin wherein the resin layer becoming the insulating layer is set to an intermediate layer and the intermediate layer is bonded so as to be held between a first metal layer becoming a wiring layer and the second metal layer becoming the carrier layer, the amount of carbon in the outermost surface of the second metal layer bonded to the resin layer is

17. 发明专利

JP2000040777A METAL PACKAGE 失效
公开(公告)号：JP2000040777A
公开(公告)日：2000-02-08
申请号：JP20938498
申请日：1998-07-24
申请人： HITACHI METALS LTD
发明人： KUMAMOTO SHINGO , OKIKAWA SUSUMU , YANO KENTARO
IPC分类号： H01L23/34
摘要： PROBLEM TO BE SOLVED: To enable a metal package composed of a metal case and a heat dissipating part to be prevented from being deformed and enhanced in heat dissipating properties. SOLUTION: When a case 1 formed of first metal the average thermal expansion coefficient and thermal conductivity of which are represented by α1 and K1 respectively at a temperature of 30 deg.C to 800 deg.C, and a heat dissipating part 4 formed of second metal the average thermal expansion coefficient and thermal conductivity of which are represented by α2 and K2 respectively at a temperature of 30 deg.C to 800 deg.C, α1, K1, α2 are so set as the satisfy formulas, an average thermal expansion coefficient ratio |α1/α2|=0.8 to 1.2, and a thermal conductivity ratio |K1/K2|

18. 发明专利

JPH11330325A HEAT SPREADER, SEMICONDUCTOR DEVICE USING THE SAME, AND ITS MANUFACTURE 失效
公开(公告)号：JPH11330325A
公开(公告)日：1999-11-30
申请号：JP14837798
申请日：1998-05-13
申请人： HITACHI METALS LTD
发明人： KUMAMOTO SHINGO , OKIKAWA SUSUMU , KISHIGAMI ICHIRO , YAMADA HIDEYA
IPC分类号： B23K20/00 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide a heat spreader having a low thermal expansion characteristic and a high heat conducting characteristic, a semiconductor device using the spreader, and a method for manufacturing the spreader. SOLUTION: In a heat spreader composed of a composite material manufactured by diffusedly joining a metal composed mainly of Cu and another metal composed mainly of Fe to each other, the thickness of a diffusion layer formed on the joint surface of the metal composed mainly of Cu is adjusted to 1-20 μm or 0.4-8% of the film thickness of the metal composed mainly of Cu. Since the above-mentioned diffused junction is performed at a hot hydrostatic pressure pressing temperature of 650-900 deg.C, a high coefficient of thermal conductivity of >=150 W/m.k and a low thermal expansion characteristic can be obtained.

19. 发明专利

JPH11297908A HEAT SPREADER AND MANUFACTURE THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME 失效
公开(公告)号：JPH11297908A
公开(公告)日：1999-10-29
申请号：JP732399
申请日：1999-01-14
申请人： HITACHI METALS LTD
发明人： KUMAMOTO SHINGO , KISHIGAMI ICHIRO , NAKANISHI HIROKI , YAMADA HIDEYA
IPC分类号： H01L23/373
摘要： PROBLEM TO BE SOLVED: To reduce an increase in a coefficient of thermal expansion and have excellent thermal expansion characteristic and sufficient thermal conductive characteristic, by a method wherein a thermal expansion restriction layer is formed with a high thermal conductive layer of a Cu-based material, low thermal expansion layer of a Fe-Ni-based alloy having a through hold, and a metal having a coefficient of thermal expansion of a specified value or less. SOLUTION: A high thermal conductive layer of a Cu-based metal and a low thermal expansion layer of a Fe-Ni-based alloy having a plurality of through holes are laminated to form a basic structure 4 of a multilayer structure. A high thermal conductive layer 3 is filled up in a through hole 2 on both sides of a low thermal expansion layer 1, and continued via the through hole 2. As a thermal expansion restriction layer 5 composed of a metal in which a coefficient of thermal expansion α30-800 deg.C is 7.5×10 / deg.C or less, at least one species of metal layer out of a Mo-based metal and a W-based metal is disposed outside the basic structure 3 of a multilayer structure. Thus, it is possible to obtain low thermal expansion characteristic in a high temperature region of 500 deg.C or more and ensure high thermal conductivity.

20. 发明专利

JPH11186476A HEAT SPREADER AND ITS MANUFACTURE, AND SEMICONDUCTOR DEVICE USING THE HEAT SPREADER 失效
公开(公告)号：JPH11186476A
公开(公告)日：1999-07-09
申请号：JP35291597
申请日：1997-12-22
申请人： HITACHI METALS LTD
发明人： KISHIGAMI ICHIRO , NAKANISHI HIROKI , YAMADA HIDEYA , KUMAMOTO SHINGO
IPC分类号： H01L23/373
摘要： PROBLEM TO BE SOLVED: To reduce anisotropy of a thermal expansion coefficient which exceeds a curie point and which reaches a high temperature and to provide a superior thermal expansion characteristic and a sufficient thermal conduction characteristic, by forming a thermal expansion suppression layer whose specified thermal expansion coefficient is not more than a specified value. SOLUTION: Three stripe-like metal boards 1 are provided and Cu metals 2 are arranged between the layers. The Cu metal 2 is also arranged on a surface outside the stripe-like metal board. At least one type of metal layer 3 in a Mo metal and a W metal is arranged as the thermal expansion suppression layer constituted of the metal whose thermal expansion coefficient α30-850 deg.C is not more than minus six-th power/ deg.C of 7.5×10 on the outer side, for example. Then, the Cu metal 2 is arranged on the outer side. Thus, a point that the thermal expansion characteristic at the high temperature at the time of junction by silver brazing is insufficient can be improved. Consequently, an inexpensive heat spreader having a high thermal conduction characteristic, low thermal expansion ability and less anisotropy of thermal expansion coefficient and less warp can be used and the cost of the semiconductor device can be reduced.

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