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11. 发明专利

JPS6319829A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6319829A
公开(公告)日：1988-01-27
申请号：JP16363886
申请日：1986-07-14
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YAGIHARA TOSHIKI , NAKAJIMA YOICHI , KUROSU TOSHIKI , KOTSUJI NORITOSHI
IPC分类号： H01L21/52 , H01L23/12 , H01L29/06
摘要： PURPOSE:To reduce the maximum shearing stress created by a temperature fluctuation and improve durability N expressed by the number of repetition of the temperature fluctuation by making the thickness of solder between a thyristor pellet and a base thicker at the edge of the solder. CONSTITUTION:A thyristor pellet 1 is supported by the surface D of the protruding pellet table 15 of a base 4. The thickness of solder 12 between the surface E of a pellet table 13 of the base 4 and the anode metal layer 3 of the thyristor pellet 1 is made to be thicker by the height of the protruding pellet table 15. The excessive solder is made to overflow onto the part 14 of the base 4. As the thickness of the solder 12 is thicker on the edge part, the creation of shearing stress can be suppressed. With this constitution, even if the thickness h3 of the solder 12 on the surface D of the protruding pellet table 15 of the base 4 is thin, the maximum shearing stress of the thyristor pellet 1 can be sufficiently reduced and, as the thickness h3 of the solder 12 on the pellet table 13 can be thick, the durability N can be improved.

12. 发明专利

JPS61251039A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61251039A
公开(公告)日：1986-11-08
申请号：JP8991585
申请日：1985-04-27
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： YAGIHARA TOSHIKI , NAKAJIMA YOICHI , KUROSU TOSHIKI , TAKANOBU SADAO , OTAKA HIROMI
IPC分类号： H01L21/316
摘要： PURPOSE:To obtain a sufficient withstand voltage even when a material having the surface charge density of the same polarity is used in the manufacture of a semiconductor device and to simplify the manufacturing method by a method wherein the respective thicknesses of the passivation materials to fill two pieces of the annular grooves in a unisurface double moat structure are made to differ from each other. CONSTITUTION:A glass 110, which is a passivation material having a negative surface charge density, is made to fill a groove 90 in such a thickness of 30mum that its surface charge density becomes 2X10 cm . A glass 100, which is also a passivation material having a negative surface charge density, is made to fill a groove 80 in such a thickness of 10mum that its surface charge density becomes 0X10 cm . In such a constitution, when forward voltage is impressed, the stretch of the depletion layer is good on a P-N junction J2 and the depletion layer is easy to reach a channel stopper 16 and when reverse voltage is impressed, the depletion layer is hard to stretch on a P-N junction J1 due to the glass 100, whose surface charge density becomes roughly zero. Accordingly, by adjusting the surface charge densities of the glasses and the polarities thereof in depths of two pieces of the annular grooves, forward and reverse withstand voltages can be given. The groove 80 of two pieces of the annular grooves is provided shallower and the other groove 90 is provided deeper, and ZnO2 glass powder is made to deposit herein.

13. 发明专利

JP2566341B2 失效
公开(公告)号：JP2566341B2
公开(公告)日：1996-12-25
申请号：JP32037790
申请日：1990-11-24
申请人： HITACHI LTD
发明人： TAKAHASHI MASAAKI , KURIHARA YASUTOSHI , TAKAHASHI SHIGERU , KANAI KYOSHI , ENDO TSUNEO , KUROSU TOSHIKI
IPC分类号： H01L23/14 , H01L21/52 , H01L23/373

14. 发明专利

JPH04192341A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04192341A
公开(公告)日：1992-07-10
申请号：JP32037790
申请日：1990-11-24
申请人： HITACHI LTD
发明人： TAKAHASHI MASAAKI , KURIHARA YASUTOSHI , TAKAHASHI SHIGERU , KANAI KIYOSHI , ENDO TSUNEO , KUROSU TOSHIKI
IPC分类号： H01L23/14 , H01L21/52 , H01L23/373
摘要： PURPOSE:To improve the reliability of a semiconductor device by providing stress reliever between a ceramic substrate and a metallic support to prevent cracks in the ceramic and bond. CONSTITUTION:A silicon chip 1 is bonded with solder 2a to a predetermined place on a metallized ceramic 3. The ceramic 3, solder 2b, a stress reliever 4 plated with nickel 7 on both sides, and solder 2c are stacked on a metallic support 5 and bonded by heat. The stress reliever is a 50-250mum thick foil made of Cu, Al, Fe, or their alloy, and it has Young's modulus of 6000-15000. This structure prevents the fracture of ceramic due to thermal expansion or the increase of thermal resistance due to a break at a connection.

15. 发明专利

JPH03195376A PARALLEL CIRCUIT OF DIODE AND IGBT, MODULE OF THE CIRCUIT AND INVERTER EMPLOYING THE MODULE 失效
公开(公告)号：JPH03195376A
公开(公告)日：1991-08-26
申请号：JP33133489
申请日：1989-12-22
申请人： HITACHI LTD
发明人： KIMURA ARATA , MATSUDA YASUO , TOKUNAGA KIICHI , MORI MUTSUHIRO , KUROSU TOSHIKI , SUZUKI YUTAKA , SAKURAI NAOKI , YASUDA YASUMICHI , TANAKA TOMOYUKI , ONDA KENICHI
IPC分类号： H01L25/07 , H01L25/18 , H02M7/00 , H02M7/48 , H02M7/5387 , H02P25/04 , H02P27/06 , H03K17/0814 , H03K17/567
摘要： PURPOSE:To suppress voltage oscillation by a method wherein the parasitic capacity of an IGBT(Insulated Gate Bipolar Transistor) is increased or a capacitor is connected instead of increasing the parasitic capacity to absorb the energy of the inductance L of a wiring. CONSTITUTION:Upon recovery of a diode, current, discharging accumulated carriers and charging a parasitic capacitance such as a junction capacitance and the like, is conducted through the diode. When it is supposed that a big capacitor is connected between both terminals of a module, a relation between an energy accumulated by the peak value IRP of the recovery current of the diode and the half period T of resonance is shown by formula I and formula II (L means the inductance of a wiring in the module and C means the total parasitic capacitor of an IGBT and the diode). Accordingly, the peak value V of voltage oscillation can be reduced and the oscillating period T can be elongated by increasing the parasitic capacitance of the IGBT and the diode or connecting a capacitor having a capacitance corresponding to the increased parasitic capacitance.

16. 发明专利

JPH02308539A CONSTRUCTION OF ELECTRODE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02308539A
公开(公告)日：1990-12-21
申请号：JP12953389
申请日：1989-05-23
申请人： HITACHI LTD
发明人： KAMIDA YUKIO , KUROSU TOSHIKI
IPC分类号： H01L21/60 , H01L21/28 , H01L21/285 , H01L21/321
摘要： PURPOSE:To prevent Si in a semiconductor substrate from being diffused into an electrode side by a method wherein at least the side of the electrode which is brought into contact with the substrate is made of AlSi metal and at least side of a bonding pad to which a bonding wire is bonded is made of Al. CONSTITUTION:An Al electrode 5 is formed on a surface including AlSi electrodes 4 and insulating layers 11 and source electrodes are composed of the Al electrode 5 and the AlSi electrodes 4 connected electrically to it. The electrode 5 is formed in common with the source electrodes of MOS transistors TR 20 and also used as a bonding pad. A bonding wire 12 is bonded to the pad surface. As the electrodes 4 brought into ohmic contact with diffused layers 9 and 10 contain Si, at the time of annealing, diffusion of Si from the diffused layer 9 or 10 side to the electrode 4 side can be blocked. Further, the electrode 5 can be bonded without increasing bonding power, so that the breakdown of the semiconductor device can be avoided.

17. 发明专利

JPS6484654A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6484654A
公开(公告)日：1989-03-29
申请号：JP24077287
申请日：1987-09-28
申请人： HITACHI LTD
发明人： KOTSUJI NORITOSHI , OTAKA HIROMI , FUJII MASAMI , KUROSU TOSHIKI , NAKAJIMA YOICHI
IPC分类号： H01L23/34 , H01L23/28 , H01L23/50
摘要： PURPOSE:To reduce the size of an insulating board to the minimum and to keep adequate the creeping distance between a semiconductor chip and a conductor by a method wherein a bend in a connecting terminal near to a section mounted with a semiconductor chip and a part of the same serving as an inner lead are formed thin by using a press or the like. CONSTITUTION:An insulating board 2 is bonded through the intermediary of a soldering material 8 to a primary surface of a heat radiating substrate 1. A plurality of semiconductor chips 4 and a plurality of connecting terminals 3 are installed on a primary surface of the insulating board 2. Inner leads 5 are provided, electrically connecting the semiconductor chips 4 and the connecting terminals 3. The insulating board 2 and parts to be installed thereon are molded, which is accomplished in a case 6. In this process, the bend of the connecting terminal 4 near to a section mounted with a semiconductor chip 4 and a part of the same serving as an inner lead 5 are formed thin. This design reduces in size the insulating board 2 to the minimum and a proper creeping distance is secured between the chip 4 and a conductor.

18. 发明专利

JPS57104270A MANUFACTURE OF CONSTANT-VOLTAGE ELEMENT 失效
公开(公告)号：JPS57104270A
公开(公告)日：1982-06-29
申请号：JP18046480
申请日：1980-12-22
申请人： HITACHI LTD
发明人： KUROSU TOSHIKI , MATSUKUMA KUNIHIRO , MIKAMI SATOSHI , YAGI HIDEYUKI , SUZUKI KENJI
IPC分类号： H01L23/48 , H01L29/866
摘要： PURPOSE:To contrive a manufacturing method making efficiently many semiconductor pellets having equal zener characteristics by a P-N junction with several to several tens of Zener voltage. CONSTITUTION:P is diffused to a P-type Si substrate of 10 -10 atm/cm and an N-type layer of 15-50mum is obtained at 10 -10 atm/cm and the N-type layer is split into many Si pellets 213 having predetermined size after forming Al layers 22, 23 of 5-15mum on the both sides of the N-type layer. The pellets are heated at the melting point exceeding that of Al under the condition that the pellets are inserted and pressed between block-shaped electrodes 24, 25 having leads 26, 27 of Cu or the like at one ends of the electrodes 24, 25, then the pellets and the electrodes 24, 25 (Mo, W, Fe-Ni alloy or the like) are adhered. This subassembly is performed by coating a glass member 28 on the Si pellets and at least the Si pellet sides of the electrodes 24, 25.

19. 发明专利

JPH08306859A PARALLEL CIRCUIT WITH DIODE AND IGBT, MODULE THEREFOR, AND POWER CONVERTER USING THE SAME 失效
公开(公告)号：JPH08306859A
公开(公告)日：1996-11-22
申请号：JP13796096
申请日：1996-05-31
申请人： HITACHI LTD
发明人： KIMURA ARATA , MATSUDA YASUO , TOKUNAGA KIICHI , MORI MUTSUHIRO , KUROSU TOSHIKI , SUZUKI YUTAKA , SAKURAI NAOKI , YASUDA YASUMICHI , TANAKA TOMOYUKI , ONDA KENICHI
IPC分类号： H01L25/07 , H01L25/18 , H02M1/00 , H02M7/537 , H02P25/04 , H02P27/06 , H03K17/16
摘要： PURPOSE: To reduce voltage oscillation when switching an IGBT so as to prevent malfunction of an inverter by increasing the thickness of a base layer of a diode to a predetermined number of times the thickness of a base layer of the IGBT and having coordination of turn-on characteristics of the IGBT and diode recovery characteristics. CONSTITUTION: On a collector electrode plate 23, an IGBT 29 and a diode 30 are connected in an electrically inverse-parallel manner. The thickness of a base layer of the diode 30 is not less than 1.2 times the thickness of a base layer of the IGBT 29. Thus, the parasitic capacitance C of the IGBT 29 and the diode 30 is increased so as to absorb energy of wiring inductance L in a module. Thus, a noise generated when switching the IGBT can be restrained, and malfunction can be prevented.

20. 发明专利

JPH0680752B2 失效
公开(公告)号：JPH0680752B2
公开(公告)日：1994-10-12
申请号：JP21623985
申请日：1985-10-01
申请人： HITACHI LTD
发明人： SATO SEIZO , NAKAJIMA YOICHI , KUROSU TOSHIKI , KOTSUJI NORITOSHI
IPC分类号： H01L23/29 , H01L23/31

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