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    • 13. 发明专利
    • METHOD FOR MODIFYING IC
    • JPH06244177A
    • 1994-09-02
    • JP28466393
    • 1993-11-15
    • HITACHI LTD
    • YAMAGUCHI HIROSHISHIMASE AKIRAMIYAUCHI TAKEOKIHONGO MIKIO
    • H01L21/302H01L21/31H01L21/3205H01L23/52
    • PURPOSE:To provide an IC modifying method by which the developing period can be remarkably shortened and the yield of ICs can be improved at the time of development by analyzing and modifying a defective part by locally forming an insulating film or wiring layer at a desired part after cutting wiring of less than 1mum in width under a step-like protective layer of an IC. CONSTITUTION:By taking out the central part of a high-luminance ion beam emitted from a liquid metal ion source 65 and converging the taken-out ion beam through a charged particle optical systems 71 and 72, and then, narrowing down the diameter of the beam through an aperture 69, an area to be observed on the surface of a protective film of an IC at a location where a film is to be formed IC is irradiated with the ion beam and the area to be observed is canned by controlling deflecting electrodes 75 and 76. Then secondary charged particles generated from the area to be observed are detected with a particle detector 86 and the enlarged SIM image of the area to be observed is displayed on a scanning ion microscope upon receiving the signals which control the electrodes 75 and 76. Based on the enlarged image, an insulating film or wiring film is locally formed on the IC so as to modify the IC while the scanning area is controlled through the electrodes 75 and 76 and irradiating the area with the converged ion beam.