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11. 发明专利

JPS5213788A PRODUCTION METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5213788A
公开(公告)日：1977-02-02
申请号：JP8925275
申请日：1975-07-23
申请人： HITACHI LTD
发明人： WADA YASUO , USUI HIROO , SATOU KIKUJI
IPC分类号： H01L27/04 , H01L21/265 , H01L21/822 , H01L49/02
摘要： PURPOSE:In order to make the formation of high resistance layer with high reliability and stableness, by means of implanting nitrogen ion on the polysilicon layer being accumulated on a insulation film.

12. 发明专利

JPS545379A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS545379A
公开(公告)日：1979-01-16
申请号：JP6982277
申请日：1977-06-15
申请人： HITACHI LTD
发明人： WADA YASUO , USUI HIROO
IPC分类号： H01L29/73 , H01L21/205 , H01L21/22 , H01L21/265 , H01L21/331 , H01L29/04
摘要： PURPOSE:To obtain the poly-crystal silicon layer which excels in the manufacturing performance and the electric properties, by doping the material with the growing free energy of the oxide larger than the silicon and thus preventing the grain diameter growth of the poly-crystal silicon in which the impurity is doped with more than 1X10 /cm .

13. 发明专利

JPS53109474A MANUFACTURE FOR SILICON WATER 失效
公开(公告)号：JPS53109474A
公开(公告)日：1978-09-25
申请号：JP2384677
申请日：1977-03-07
申请人： HITACHI LTD
发明人： TAMURA HIROSHI , USUI HIROO , WADA YASUO , MAKI MICHIYOSHI
IPC分类号： H01L29/73 , H01L21/261 , H01L21/263 , H01L21/331 , H01L27/04 , H01L29/04 , H01L29/70 , H01L29/76 , H01L29/78 , H01L31/04
摘要： PURPOSE:To obtain the Si substrate suitable for manufacture of IC and LSI, by introducing N or P type impurity ion on the Si substrate surface of high resistivity type the impurity distribution of which is uniformed by radiating neutron, and by achieving desired and uniform specific resistivity.

14. 发明专利

JPS5359375A PPN JUNCTION DEPTH MEASUREMENT 失效
公开(公告)号：JPS5359375A
公开(公告)日：1978-05-29
申请号：JP13404476
申请日：1976-11-10
申请人： HITACHI LTD
发明人： WADA YASUO , USUI HIROO
IPC分类号： H01L21/66 , H01L21/322
摘要： PURPOSE:To measure the junction depth simply with a good accuracy by controlling the minority carrier life near PN junction to a prescribed value by the ion injection met or the gold diffusion method and irradiating beam here to measure electromotive force.

15. 发明专利

JPH0661169A ION IMPLANTATION ASSIST DEVICE 失效
公开(公告)号：JPH0661169A
公开(公告)日：1994-03-04
申请号：JP20878692
申请日：1992-08-05
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： TAKAHAMA TAKASHI , HIRAIWA ATSUSHI , USUI HIROO , TERADA TOMOYUKI
IPC分类号： H01L21/265 , H01L21/00
摘要： PURPOSE:To enable the distribution of recoil atom contamination in an ion implanted specimen to be estimated by a method wherein an optional region of the inner wall of an ion implantation device is designated, and the recoil motions of contaminating recoil atoms are traced one by one through a two- body collision approximation Monte Carlo method in the region concerned. CONSTITUTION:An incident angle is determined when an ion beam is applied to an origin of a coordinate system. Then, the hit point of an implanted atom is set adjacent to the origin of the coordinate system. After the hit point of an implanted atom is determined, an ion beam application is executed. First, the scattering angles of incident atoms are determined through a Monte Carlo method. Then, the transition energy T of atom is determined based on its scattering angle theta. The transition energy T is compared with a displacement energy of atom of an ion implantation device inner wall material, and when the inequality, (transition energy)

16. 发明专利

JPH01243418A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01243418A
公开(公告)日：1989-09-28
申请号：JP6938288
申请日：1988-03-25
申请人： HITACHI LTD
发明人： HIRAIWA ATSUSHI , KOBAYASHI TAKASHI , USUI HIROO
IPC分类号： H01L21/336 , H01L21/265 , H01L29/78
摘要： PURPOSE:To uniformize characteristics of an MOS transistor, and suppress the deterioration of gate oxide film, by implanting ion after an amorphous conductor or a semiconductor film is formed on an insulating film. CONSTITUTION:Instead of the conventional polycrystalline silicon film, an amorphous silicon film 4 is formed, which is used as a shield layer at the time of E implantation (ion implantation to adjust the threshold voltage of an MOS transistor). The shield layer is necessary to be amorphous at the time of E implantation, and it is allowed that the layer turns into polycrystal or single crystal after the E implantation. In the amorphous silicon film 4, therefore, crystal structure such as the one in a polycrystalline silicon film scarcely exists, so that channeling does not generate at the time of ion implantation. Thereby, the uniformity of the threshold voltage of an MOS transistor can be improved without deteriorating a gate oxide film 3.

17. 发明专利

JPS5951127B2 失效
公开(公告)号：JPS5951127B2
公开(公告)日：1984-12-12
申请号：JP9615574
申请日：1974-08-23
申请人： HITACHI LTD
发明人： WADA YASUO , USUI HIROO , HASHIMOTO TETSUKAZU , ASHIKAWA MIKIO
IPC分类号： H01L21/76 , H01L21/265 , H01L21/31 , H01L21/324

18. 发明专利

JPS597229B2 JPS597229B2 - 失效
公开(公告)号：JPS597229B2
公开(公告)日：1984-02-17
申请号：JP14341174
申请日：1974-12-16
申请人： Hitachi Ltd
发明人： WADA YASUO , USUI HIROO , HASHIMOTO TETSUKAZU , ASHIKAWA MIKIO
IPC分类号： H01L29/78 , H01L21/265 , H01L21/336

19. 发明专利

JPS5885522A MANUFACTURE OF POLYSILICON LAYER 失效
公开(公告)号：JPS5885522A
公开(公告)日：1983-05-21
申请号：JP18383581
申请日：1981-11-18
申请人： HITACHI LTD
发明人： KAWAMURA MASAO , HAYASHI KUNIO , MATSUDA MASATOSHI , WADA MINORU , USUI HIROO
IPC分类号： H01L21/225 , H01L21/3215 , H01L21/22
摘要： PURPOSE:To improve the dependence of resistance value on forming temperature, by a method wherein heat treatment is performed at more than annealing temperature after a polysilicon layer has formed, and impurities are added by ion implantation or vapor phase diffusion technique to form a doped polysilicon layer. CONSTITUTION:Nondoped polysilicon layer is formed on an insulating film of a substrate by the vacuum horizontal reaction tube method at the forming temperature in the range of 550 deg.C-750 deg.C with interval of 50 deg.C. The layer is then heat treated at 1,000 deg.C for 30min within nitrogen flow. After that, phosphor is added into the polysilicon layer at 900 deg.C by POCl3 (oxyphosphate trichloride) method. As shown in the drawing, the resistance values of thus produced doped polysilicon layer are scarcely put under the influence of the temperature at the time of formation of polysilicon layer, and are proved to be of nearly constant value in all temperature range by the measurement. The annealing temperature preferably be below 1,150 deg.C, because the shape of p-n junction would be defective when the annealing temperature exceeds 1,150 deg.C.

20. 发明专利

JPS57206046A WAFER CONVEYING DEVICE 失效
公开(公告)号：JPS57206046A
公开(公告)日：1982-12-17
申请号：JP9095281
申请日：1981-06-15
申请人： HITACHI LTD
发明人： YAGI KUNIHIRO , USUI HIROO , SUZUKI MICHIO , HASHIMOTO TETSUKAZU , MATSUOKA SADAO
IPC分类号： H01J37/317 , C23C14/56 , H01L21/677 , H01L21/68
摘要： PURPOSE:To remove a foreign material which is attached to the wafer by providing a vacuum exhausting hole in the vicinity of a wafer inserting hole part or a wafer feeding hole part in a vacuum exhausting chamber. CONSTITUTION:The vacuum exhausting hole D1 is provided at the inserting hole part of a spare vacuum exhausting chamber 12. The Si wafer is slidden into the spare exhausting chamber 12 on a sliding plate 37 through the inserting hole part 35 and mounted on a stage 38. The sliding plate 37 has a perforated structure 36. Dust, which falls when the wafer is slidden and passes, is sucked from the vacuum exhausting hole 33 through the perforated structure 36.

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