专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JP2006133712A Positive resist composition and pattern forming method employing it 有权
标题翻译：积极抵制组合和形式化方法
公开(公告)号：JP2006133712A
公开(公告)日：2006-05-25
申请号：JP2004358699
申请日：2004-12-10
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： KANDA HIROMI , NISHIYAMA FUMIYUKI
IPC分类号： G03F7/004 , C08F220/18 , C08F232/00 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0048 , G03F7/2041 , Y10S430/108
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition which is employed in manufacturing steps of semiconductors such as ICs and when manufacturing liquid crystals, circuit boards for thermal heads, and used in the lithographic steps of other photo applications, and which improves developing defect rates in normal exposure and suppresses degradation of the DOF (depth of focus) and the profile when applied to liquid immersed exposure, with improved hydrophilicity and gnerating less scum, and also provide a pattern forming method using this composition. SOLUTION: This is a positive resist composition containing (A) resin which has a monocyclic or multicyclic cycloparaffin structure and is decomposed by acid and becomes easier to dissolve in an alkali developer, (B) a compound which generates acid when irradiated with active light or radiation, and (F) special surfactant. This pattern forming method employs this positive resist composition. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于半导体（例如IC）的制造步骤中的正性抗蚀剂组合物，以及制造液晶时，用于热敏头的电路板，并用于其它照相应用的光刻步骤中，以及哪些提高正常曝光中的缺陷率，抑制DOF（焦点深度）的劣化以及应用于液浸曝光时的轮廓，具有改善的亲水性和较少的浮渣，并且还提供使用该组合物的图案形成方法。解决方案：这是含有（A）树脂的正性抗蚀剂组合物，其具有单环或多环环烷烃结构并被酸分解并变得更容易溶于碱性显影剂中;（B）当被照射时产生酸的化合物活性光或辐射，和（F）特殊表面活性剂。该图案形成方法采用该正性抗蚀剂组合物。版权所有（C）2006，JPO＆NCIPI

12. 发明专利

JP2005250211A Positive resist composition and pattern forming method using the same 有权
标题翻译：正极性组合物和使用其的图案形成方法
公开(公告)号：JP2005250211A
公开(公告)日：2005-09-15
申请号：JP2004061865
申请日：2004-03-05
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI , YAMANAKA TSUKASA , SATO KENICHIRO
IPC分类号： G03F7/039 , G03F7/033 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for use in an ultramicro-lithographic process for manufacturing VLSI or a high capacity microchip and in another photofabrication process, and having improved PEB temperature dependency, and to provide a pattern forming method using the same. SOLUTION: The positive resist composition comprises two resins each containing a group which is decomposed by the action of an acid to increase solubility in an alkaline developer and a compound which generates an acid upon irradiation with an actinic ray or radiation, wherein each of the two resins includes an alicyclic structure as well as at least one of a repeating unit derived from an acrylic acid derivative monomer and a repeating unit derived from a methacrylic acid derivative monomer and has a weight average molecular weight of ≥4,500, and difference between the weight average molecular weights of the two resins is ≥2,000. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供适合用于制造VLSI或高容量微芯片的超微光刻工艺中的正型抗蚀剂组合物，以及在另一光致制造工艺中并具有改进的PEB温度依赖性，并提供图案形成方法使用相同。解决方案：正型抗蚀剂组合物包含两种树脂，每种树脂各自含有通过酸的作用而分解的基团，以增加在碱性显影剂中的溶解度和在用光化射线或辐射照射时产生酸的化合物，其中每个的两种树脂包括脂环结构以及衍生自丙烯酸衍生物单体的重复单元和衍生自甲基丙烯酸衍生物单体的重复单元中的至少一种，并且具有≥4,500的重均分子量，以及两种树脂的重均分子量≥2,000。版权所有（C）2005，JPO＆NCIPI

13. 发明专利

JP2004361629A Positive resist composition 有权
标题翻译：积极抵抗组成
公开(公告)号：JP2004361629A
公开(公告)日：2004-12-24
申请号：JP2003159550
申请日：2003-06-04
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： SATO KENICHIRO , NISHIYAMA FUMIYUKI , KANNA SHINICHI
IPC分类号： G03F7/039 , C08F220/18 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition having wide exposure latitude, small PEB temperature dependency and wide defocus latitude. SOLUTION: The positive resist composition contains (A1) a resin containing a repeating unit having an alicyclic group in a side chain and having a dissolution rate in an alkali developer increased by the action of an acid, (A2) a resin containing a repeating unit having a chain tertiary alkyl group in a side chain and having a dissolution rate in an alkali developer increased by the action of an acid, and (B) a compound which generates an acid upon irradiation with an actinic ray or radiation. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有宽曝光宽容度，小PEB温度依赖性和宽散焦纬度的正光刻胶组合物。解决方案：正型抗蚀剂组合物包含（A1）含有侧链中具有脂环基的重复单元并且在碱性显影剂中的溶解速率通过酸的作用而增加的树脂（A2）含有在侧链中具有链叔烷基并且在碱性显影剂中的溶解速率的重复单元通过酸的作用而增加，和（B）在用光化射线或辐射照射时产生酸的化合物。版权所有（C）2005，JPO＆NCIPI

14. 发明专利

JP2004246326A Positive resist composition and method for forming pattern by using the same 有权
公开(公告)号：JP2004246326A
公开(公告)日：2004-09-02
申请号：JP2003355002
申请日：2003-10-15
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： FUJIMORI TORU , NISHIYAMA FUMIYUKI
IPC分类号： G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition having high adaptability for a high reflective substrate, suppressing generation of static waves and giving a square profile.
SOLUTION: The positive resist composition contains the following resin (A1), a compound (B) which generates an acid by irradiation of active rays or radiation, and a solvent (C). The resin (A1) contains a specified repeating unit having -O-CH(L)-OZ
1 , wherein Z
1 represents a group showing at least absorption at 248 nm and L represents a hydrogen atom, an alkyl group or an aralkyl group, in the side chain benzene ring, and at least either a specified repeating unit having -O-CH(L')-OW, wherein W represents an alkyl group and L' represents a hydrogen atom, an alkyl group or an aralkyl group, in the side chain benzene ring, or a hydroxystyrene repeating unit, and the resin is decomposed by the effect of an acid to increase the solubility with an alkali developer liquid.
COPYRIGHT: (C)2004,JPO&NCIPI

15. 发明专利

JP2004126013A Positive resist composition 有权
公开(公告)号：JP2004126013A
公开(公告)日：2004-04-22
申请号：JP2002287391
申请日：2002-09-30
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI , SATO KENICHIRO , KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F220/12 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition showing an excellent side lobe margin and suitable for a microfabrication which uses far-UV light, in particular, ArF excimer laser light. SOLUTION: The positive resist composition is characterized by containing: (A) a resin which has specified two kinds of repeating units and an aliphatic cyclic hydrocarbon group in the side chain and which increases the solubility rate with an alkali developer solution by the effect of an acid; and (B) a specified sulfonium compound which generates an acid by irradiation of specified active rays or radiation and which has a naphthalene framework. COPYRIGHT: (C)2004,JPO

16. 发明专利

JP2003066596A Negative resist composition 审中-公开
标题翻译：负极组成
公开(公告)号：JP2003066596A
公开(公告)日：2003-03-05
申请号：JP2001254879
申请日：2001-08-24
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： YASUNAMI SHOICHIRO , NISHIYAMA FUMIYUKI , MOMOTA ATSUSHI
IPC分类号： G03F7/004 , C08F12/22 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a negative resist composition which simultaneously satisfies such properties as sensitivity, resolution, pattern shape and line edge roughness when KrF excimer laser light, an electron beam or X-ray is used. SOLUTION: The negative resist composition comprises (A) an alkali-soluble polymer, (B) a crosslinker which crosslinks with the alkali-soluble polymer (A) under the action of an acid and (D) a specified sulfonimido compound which generates the acid when irradiated with active light or radiation.
摘要翻译：要解决的问题：提供当使用KrF准分子激光，电子束或X射线时，同时满足灵敏度，分辨率，图案形状和线边缘粗糙度等性质的负型抗蚀剂组合物。解决方案：负型抗蚀剂组合物包含（A）碱溶性聚合物，（B）在酸的作用下与碱溶性聚合物（A）交联的交联剂和（D）产生酸的特定磺酰亚胺化合物当用活性光或辐射照射时。

17. 发明专利

JP2002116545A POSITIVE TYPE PHOTORESIST COMPOSITION 失效
公开(公告)号：JP2002116545A
公开(公告)日：2002-04-19
申请号：JP2000310791
申请日：2000-10-11
申请人： FUJI PHOTO FILM CO LTD
发明人： FUJIMORI TORU , TAN SHIRO , NISHIYAMA FUMIYUKI
IPC分类号： G03F7/039 , C08K5/00 , C08K5/09 , C08K5/16 , C08L25/18 , C08L101/00 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive type photoresist composition excellent in various characteristics as a resist such as sensitivity, resolution and focal depth and capable of suppressing the occurrence of foreign matter on a resist pattern. SOLUTION: The positive type photoresist composition contains (A) a compound which generates an acid when irradiated with active light or radiation, (B) an alkali-insoluble or slightly alkali-soluble resin which is decomposed by the action of the acid to increase its solubility in an alkali developing solution and (C) a compound expressed by a specified formula.

18. 发明专利

JP2002006493A POSITIVE PHOTORESIST COMPOSITION 失效
公开(公告)号：JP2002006493A
公开(公告)日：2002-01-09
申请号：JP2000186404
申请日：2000-06-21
申请人： FUJI PHOTO FILM CO LTD
发明人： NISHIYAMA FUMIYUKI , FUJIMORI TORU
IPC分类号： G03F7/039 , C08F212/04 , C08F212/14 , C08F220/18 , C08K5/00 , C08L25/18 , C08L33/06 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a chemical amplification type positive photoresist composition which attains improved shortening of the edge part (longitudinal direction) of a line pattern. SOLUTION: The positive photoresist composition contains a resin (A) having a structural unit containing an acid decomposable group with a specified structure and having solubility in an alkali developing solution increased by decomposition by the action of an acid, a resin (B) having a structural unit containing an acid decomposable group with another specified structure and having solubility in the alkali developing solution increased by decomposition by the action of the acid and a compound which generates the acid when irradiated with active light or radiation.

19. 发明专利

JPH0695374A PHOTOSENSITIVE RESIN COMPOSITION 失效
公开(公告)号：JPH0695374A
公开(公告)日：1994-04-08
申请号：JP24309392
申请日：1992-09-11
申请人： FUJI PHOTO FILM CO LTD
发明人： TAN SHIRO , TAKADA YASUNORI , AOTANI NORIMASA , NISHIYAMA FUMIYUKI
IPC分类号： G03F7/022 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain the photoresist composition superior in resolution, sensitivity, and storage stability and capable of forming a pattern approximate to a rectangle in the sectional form by incorporating a photosensitive material specified in structure and an alkali-soluble resin. CONSTITUTION:The photosensitive resin composition contains the alkali-soluble resin and the photosensitive material having the structure represented by formula I in which each of R1-R8 is H, OH, or the like, or -OD or -N(R)-D (R is H or alkyl; D is 1,2-naphthoquinonediazido-5- or -4-sulfonyl), but at least one of R1-R8 is -OD or -N(R)-D; each of R9-R12 is H or lower alkyl or each of (R9 and R10) and/or (R11 and R12) may form a ring; each of R13-R16 is H or lower alkyl, or R13 or R14 and R15 or R16, may form a ring, but at least one of R13-R16 is a substituent except H; and Z is O or a simple bond.

20. 发明专利

JP2002116543A POSITIVE TYPE PHOTORESIST COMPOSITION 失效
公开(公告)号：JP2002116543A
公开(公告)日：2002-04-19
申请号：JP2000310727
申请日：2000-10-11
申请人： FUJI PHOTO FILM CO LTD
发明人： FUJIMORI TORU , TAN SHIRO , NISHIYAMA FUMIYUKI
IPC分类号： G03F7/039 , C08K5/00 , C08K5/101 , C08K5/16 , C08L25/18 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive type photoresist composition excellent in various characteristics as a resist such as sensitivity, resolution and focal depth and capable of suppressing the occurrence of foreign matter on a resist pattern. SOLUTION: The positive type photoresist composition contains (A) a compound which generates an acid when irradiated with active light or radiation, (B) an alkali-insoluble or slightly alkali-soluble resin which is decomposed by the action of the acid to increase its solubility in an alkali developing solution and (C) a compound of a specified formula.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式