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1. 发明专利

JP2006189713A Positive resist composition for ion implantation process and ion implantation method using same 有权
标题翻译：用于离子植入方法的阳离子组合物和使用其的离子植入方法
公开(公告)号：JP2006189713A
公开(公告)日：2006-07-20
申请号：JP2005002735
申请日：2005-01-07
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： SATO KENICHIRO , SUGIMOTO NAOYA , NISHIYAMA FUMIYUKI
IPC分类号： G03F7/039 , G03F7/004 , G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition for an ion implantation process which ensures a good profile, a small change in line width at the time of variation in film thickness, and large exposure latitude, and an ion implantation method using the same. SOLUTION: The positive resist composition for an ion implantation process contains (A) a resin having a rate of dissolution in an alkaline developer increased by the action of an acid and (B) a compound which generates an acid upon irradiation with an actinic ray, wherein a resist film formed from the positive resist composition has a transmittance at 193 nm of 30-60%. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于离子注入工艺的正型抗蚀剂组合物，其确保良好的轮廓，膜厚度变化时的线宽度的小的变化和大的曝光宽容度，以及离子注入法使用相同解决方案：用于离子注入工艺的正型抗蚀剂组合物包含（A）具有通过酸的作用而在碱性显影剂中溶解的速率的树脂和（B）在照射时产生酸的化合物光化学射线，其中由正性抗蚀剂组合物形成的抗蚀剂膜在193nm处的透射率为30-60％。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004302079A Positive resist composition 有权
公开(公告)号：JP2004302079A
公开(公告)日：2004-10-28
申请号：JP2003094330
申请日：2003-03-31
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI
IPC分类号： G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition in which changes in the line width are significantly suppressed. SOLUTION: The positive resist composition contains: resin (A) which has a structural unit containing an acid decomposing group of a specified structure and which is decomposed by the effect of an acid to increase the solubility with an alkaline developing solution; and/or resin (B) which has a structural unit containing an acid decomposing group of another specified structure and which is decomposed by the effect of an acid to increase the solubility with an alkaline developing solution; and a compound which generates an acid by irradiation with active rays or radiation. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2005234326A Resist composition for liquid immersion exposure and pattern forming method using the same 有权
标题翻译：用于液体渗透曝光的阻燃组合物及其形成方法
公开(公告)号：JP2005234326A
公开(公告)日：2005-09-02
申请号：JP2004044763
申请日：2004-02-20
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： TAKAHASHI AKIRA , KANNA SHINICHI , INABE HARUKI , KANDA HIROMI , NISHIYAMA FUMIYUKI
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition for liquid immersion exposure improved in line edge roughness, pattern falling and exposure latitude and excellent in property of following an immersion liquid when applied to liquid immersion exposure, and to provide a pattern forming method using the same. SOLUTION: The resist composition for liquid immersion exposure comprises (A) a resin whose solubility to an alkaline developer is increased by the action of an acid, (B) an acid generator by light, and (C) a mixed solvent containing at least one selected from the group α of solvents (alkylene glycol monoalkyl ether carboxylates) and at least one selected from the group β of solvents (alcohol solvents and alkyl lactate solvents each having a boiling point above 120°C). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于浸液曝光的抗蚀剂组合物，其在施加于液浸曝光时提高线边缘粗糙度，图案下落和曝光宽容度以及随后浸没液体的性能优异，并提供图案形成方法使用相同。解决方案：用于液浸曝光的抗蚀剂组合物包括（A）通过酸作用使碱性显影剂的溶解度增加的树脂，（B）酸产生剂的光，和（C）含有选自溶剂（亚烷基二醇单烷基醚羧酸盐）的α族和选自溶剂组β（醇溶剂和沸点高于120℃的烷基酯溶液）中的至少一种中的至少一种。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004302199A Positive resist composition 有权
标题翻译：积极抵抗组成
公开(公告)号：JP2004302199A
公开(公告)日：2004-10-28
申请号：JP2003095805
申请日：2003-03-31
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： SATO KENICHIRO , YAMANAKA TSUKASA , NISHIYAMA FUMIYUKI , MOMOTA ATSUSHI
IPC分类号： G03F7/039 , G03F7/027 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive photoresist composition which solves problems in the techniques to improve the performance of microphotofabrication itself using far UV light, in particular, ArF excimer laser light, and to provide a positive photoresist composition for far UV exposure with low dependence on the PEB (post exposure bake) time. SOLUTION: The positive resist composition contains: a resin (A) in which all of repeating units are acrylic units, which has an alicyclic group but no aromatic group and which increases the solubility with a developing solution by the effect of an acid; a resin (B) which contains an acrylic unit and a methacrylic unit as repeating units, which has no aromatic group and which increases the solubility with a developing solution by the effect of an acid; a compound (C) which generates an acid by irradiation of active rays or radiation. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种正光致抗蚀剂组合物，其解决了使用远紫外光，特别是ArF准分子激光来提高微成像本身的性能的技术中的问题，并提供用于远紫外线的正性光致抗蚀剂组合物曝光时间对PEB（曝光后曝光）的依赖度低。解决方案：正型抗蚀剂组合物包含：其中所有重复单元均为丙烯酸单元的树脂（A），其具有脂环基但不含芳族基团，并且通过酸的作用增加与显影液的溶解度 ; 含有丙烯酸单元和甲基丙烯酸单元作为重复单元的树脂（B），其不具有芳族基团，并且通过酸的作用使显影液的溶解度增加; 通过活性射线或辐射的照射产生酸的化合物（C）。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004145298A Positive resist composition and method for forming pattern by using the same 有权
公开(公告)号：JP2004145298A
公开(公告)日：2004-05-20
申请号：JP2003315478
申请日：2003-09-08
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI , SATO KENICHIRO , KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F220/18 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition which can be suitably used for microphotofabrication using far UV rays, in particular ArF excimer laser light and which eliminates problems of line edge roughness and pattern collapse. SOLUTION: The positive resist composition contains: (A) a resin which contains specified two kinds of repeating units having an aliphatic cyclic hydrocarbon group in the side chain and which increases its solubility rate with an alkali developer solution by the effect of an acid; and (B) a specific sulfonium compound having a specific structure which produces an acid by irradiation of active rays or radiation. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004126014A Positive resist composition 审中-公开
标题翻译：积极抵抗组成
公开(公告)号：JP2004126014A
公开(公告)日：2004-04-22
申请号：JP2002287392
申请日：2002-09-30
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI , SATO KENICHIRO , KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F220/12 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition having excellent shortening performance and process margin performance, and suitable for microfabrication which uses far-UV light, in particular, ArF excimer laser light. SOLUTION: The positive resist composition contains: a resin which has an aliphatic cyclic hydrocarbon group in the side chain and specified two repeating units and which increases the solubility rate with an alkali developer solution by the effect of an acid; and a specified trialkylsulfonium compound which generates an acid by irradiation of active rays or radiation. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供具有优异的起酥油性能和加工余量性能的正型抗蚀剂组合物，并且适用于使用远紫外线，特别是ArF准分子激光的微细加工。解决方案：正型抗蚀剂组合物包含：在侧链中具有脂族环状烃基并且具有两个重复单元并且通过酸的作用使碱性显影剂溶液的溶解度增加的树脂; 和通过活性射线或辐射的照射产生酸的指定三烷基锍化合物。版权所有（C）2004，JPO

7. 发明专利

JP2005234330A Resist composition for liquid immersion exposure and pattern forming method using the same 有权
标题翻译：用于液体渗透曝光的阻燃组合物及其形成方法
公开(公告)号：JP2005234330A
公开(公告)日：2005-09-02
申请号：JP2004044795
申请日：2004-02-20
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI , TAKAHASHI AKIRA
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0048 , G03F7/0395 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide an excellent resist composition for liquid immersion exposure free from deterioration in the depth of a focus (DOF) and in profile even when applied to liquid immersion exposure, and to provide a pattern forming method using the same. SOLUTION: The resist composition for liquid immersion exposure comprises (A) a resin whose solubility in an alkaline developer is increased by the action of an acid, (B) an acid generator, and (C) a mixed solvent containing an alkylene glycol alkyl ether carboxylate and propylene glycol monomethyl ether. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供优异的液浸曝光用抗蚀剂组合物，即使在液浸曝光时也能够防止焦点深度（DOF）和轮廓的劣化，并且提供使用相同。解决方案：用于浸液曝光的抗蚀剂组合物包括（A）其在碱性显影剂中的溶解度由酸的作用增加的树脂，（B）酸产生剂，和（C）含有亚烷基的混合溶剂乙二醇烷基醚羧酸酯和丙二醇单甲基醚。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004287195A Positive resist composition 审中-公开
公开(公告)号：JP2004287195A
公开(公告)日：2004-10-14
申请号：JP2003080679
申请日：2003-03-24
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI , FUJIMORI TORU , KODAMA KUNIHIKO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition which significantly suppresses the line width change rate by changes in the resist film thickness on a highly reflective substrate with a rough surface (such as a bare silicon substrate, a polysilicon substrate). SOLUTION: The composition contains a resin (A) which has a structural unit containing an acid decomposing group of a specified structure and is decomposed by the effect of an acid to increase the solubility to an alkaline developing solution and/or a resin (B) which has a structural unit containing an acid decomposing group of another specified structure and is decomposed by the effect of an acid to increase the solubility to an alkaline developing solution; and a resin (C) which has a structural unit containing an acid decomposing group of another specified structure and is decomposed by the effect of an acid to increase the solubility to an alkaline developing solution; and a compound which has a specified structure and which generates an acid by irradiation of active rays or radiation. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2003057827A Positive resist composition 审中-公开
标题翻译：积极抵抗组成
公开(公告)号：JP2003057827A
公开(公告)日：2003-02-28
申请号：JP2002110792
申请日：2002-04-12
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： YASUNAMI SHOICHIRO , NISHIYAMA FUMIYUKI , MOMOTA ATSUSHI , KAWAMURA KOICHI
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in sensitivity and resolution and satisfying even a rectangular pattern shape and good edge roughness.
SOLUTION: The positive resist composition comprises a compound which generates an acid when irradiated with active light or radiation, a polymer which is insoluble or slightly soluble in an aqueous alkali solution and is made soluble in the aqueous alkali solution by the action of the acid and a compound which includes a specified sulfonimide structure.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供灵敏度和分辨率优异的正光刻胶组合物，甚至满足矩形图案形状和良好的边缘粗糙度。解决方案：正性抗蚀剂组合物包含当用活性光或辐射照射时产生酸的化合物，不溶于或微溶于碱水溶液的聚合物，并通过酸的作用溶于碱水溶液中，包括特定磺酰亚胺结构的化合物。

10. 发明专利

JP2006259277A Positive resist composition and pattern forming method using the resist composition 有权
标题翻译：积极抵抗组合物和使用抗蚀剂组合物的图案形成方法
公开(公告)号：JP2006259277A
公开(公告)日：2006-09-28
申请号：JP2005077103
申请日：2005-03-17
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition improved in mask error factor (MEF) performance and to provide a pattern forming method using the composition. SOLUTION: The positive resist composition comprises: (A) a resin which has a β-(meth)acroyloxy-γ-butyrolactone repeating unit having a lactone ring which may have a substituent, is insoluble or hardly soluble with an alkali but decomposed by an action of an acid to increase the solubility with an alkali developing solution; and (B) a compound which generates a specified organic acid, for example, expressed by general formulae (3), (3'), by irradiation with active rays or radiation. The pattern forming method is carried out by using the composition. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供改善掩模误差因子（MEF）性能的正性抗蚀剂组合物，并提供使用该组合物的图案形成方法。正型抗蚀剂组合物包括：（A）具有具有可具有取代基的内酯环的β-（甲基）丙酰氧基-γ-丁内酯重复单元的树脂不溶于碱或难溶于碱，但是通过酸的作用分解以增加与碱性显影液的溶解度; 和（B）通过用活性射线或辐射照射产生例如由通式（3），（3'）表示的特定有机酸的化合物。图案形成方法通过使用该组合物进行。版权所有（C）2006，JPO＆NCIPI

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