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1. 发明专利

JP2006146143A Photosensitive composition and method for forming pattern using it 有权
标题翻译：用于形成图案的感光性组合物和方法
公开(公告)号：JP2006146143A
公开(公告)日：2006-06-08
申请号：JP2005180979
申请日：2005-06-21
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F220/28 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photosensitive composition which is used in the manufacturing step of a semiconductor such as an IC, in manufacturing step of a circuit board such as liquid crystals and thermal heads, and other photofabrication steps, having an excellent resolution and line edge roughness; and to provide a method for forming a pattern using the same. SOLUTION: The photosensitive composition contains (A) a resin having a repeating unit of a specific group, whose solubility in an alkaline developer increases by the action of an acid, and the method is disclosed for forming a pattern using the same. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种用于诸如IC的半导体的制造步骤中的光敏组合物，在诸如液晶和热敏头之类的电路板的制造步骤和其它光制造步骤中，具有优异的分辨率和线边缘粗糙度; 并提供使用其形成图案的方法。光敏组合物含有（A）具有特定基团的重复单元的树脂，其在碱性显影剂中的溶解度通过酸的作用而增加，并且公开了用于形成使用其的图案的方法。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006091073A Positive type photosensitive composition and pattern forming method using the positive type photosensitive composition 审中-公开
标题翻译：正型型光敏组合物和使用正型光敏组合物的图案形成方法
公开(公告)号：JP2006091073A
公开(公告)日：2006-04-06
申请号：JP2004272985
申请日：2004-09-21
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F20/34 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive-type photosensitive composition and a pattern forming method that uses the positive type photosensitive composition which are used in a manufacturing process for a semiconductor of an IC and the like, a manufacturing process for a liquid crystal circuit board, a thermal head and the like and another photofabrication processes, wherein the line edge roughness and development defects are improved. SOLUTION: The positive-type photosensitive composition contains (A) a compound, generating a specified alkane sulfonic acid by irradiation with active rays or radiation and (B) a resin which has a specified repeating units and whose solubility in an alkali developer is increased by the action of acid. The positive-type photosensitive composition is used in the pattern forming method. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供使用用于IC等的半导体的制造工艺中的正型感光性组合物的正型感光性组合物和图案形成方法，液晶电路板，热敏头等以及其他光制造工艺，其中线边缘粗糙度和显影缺陷得到改善。正型感光性组合物含有（A）通过用活性射线或辐射照射产生特定烷烃磺酸的化合物和（B）具有规定重复单元并且在碱性显影剂中的溶解度的树脂通过酸的作用而增加。在图案形成方法中使用正型感光性组合物。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2006084924A Resist composition and method for forming pattern using the resist composition 有权
标题翻译：耐蚀组合物和使用耐火组合物形成图案的方法
公开(公告)号：JP2006084924A
公开(公告)日：2006-03-30
申请号：JP2004271115
申请日：2004-09-17
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： KODAMA KUNIHIKO
IPC分类号： G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition that is used for the manufacturing process of semiconductors, such as ICs, for manufacturing circuit boards of liquid crystals, thermal heads or the like, and for other photo-fabrication processes, and to provide a method for forming a pattern using this resist composition, wherein PEB (post exposure baking) temperature dependence and density dependence are improved, and the sensitivity and dissolution contrast on exposure to EUV light are improved. SOLUTION: The resist composition contains a compound which generates a specific alkane sulfonic acid by irradiation with active rays or radiation and a specified basic compound, and the method for forming a pattern is carried out, using the resist composition. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供用于制造半导体（例如IC）的制造工艺中用于制造液晶电路板，热敏头等的光刻胶组合物和用于其它光刻工艺的光刻胶组合物，以及提供使用该抗蚀剂组合物形成图案的方法，其中改善了PEB（曝光后烘烤）温度依赖性和密度依赖性，并且提高了暴露于EUV光的灵敏度和溶解度对比度。解决方案：抗蚀剂组合物含有通过用活性射线或辐射照射产生特定烷烃磺酸的化合物和特定的碱性化合物，并且使用抗蚀剂组合物进行形成图案的方法。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005084240A Stimulus-sensitive composition, compound, and pattern forming method using stimulus-sensitive composition 审中-公开
标题翻译：刺激敏感组合物的敏感组合物，化合物和图案形成方法
公开(公告)号：JP2005084240A
公开(公告)日：2005-03-31
申请号：JP2003314219
申请日：2003-09-05
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： KODAMA KUNIHIKO
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a stimulus-sensitive composition having small PEB temperature dependence and ensuring an improved resolution and profile of a contact hole and a pattern forming method using the same, to provide a photosensitive composition having small PEB temperature dependence at an exposure wavelength of ≤200 nm, particularly at the wavelength of F 2 laser light (157 nm), and ensuring an improved resolution and profile of a contact hole and a pattern forming method using the same, and to provide a compound (A) which generates an acid or a radical under an external stimulus, thereby providing these compositions. SOLUTION: The stimulus-sensitive composition which contains a compound (A) of a specific structure which generates an acid or a radical under an external stimulus and the pattern forming method uses the same composition, and the compound (A) of the specific structure are presented. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有小PEB温度依赖性并且确保改进的接触孔的分辨率和轮廓的刺激敏感组合物和使用其的图案形成方法，以提供具有小的PEB温度依赖性的光敏组合物在曝光波长≤200nm的情况下，特别是在F 2 激光（157nm）的波长下，确保改进的接触孔的分辨率和轮廓，以及使用该曝光波长的图案形成方法，并提供在外部刺激下产生酸或自由基的化合物（A），从而提供这些组合物。解决方案：包含在外部刺激下产生酸或自由基的特定结构的化合物（A）的刺激敏感性组合物和图案形成方法使用相同的组成，并且化合物（A）介绍了具体的结构。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004361577A Photosensitive composition 有权
标题翻译：光敏组合物
公开(公告)号：JP2004361577A
公开(公告)日：2004-12-24
申请号：JP2003158303
申请日：2003-06-03
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： KODAMA KUNIHIKO , SATO KENICHIRO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photosensitive composition which has less PEB temperature dependency, for good property, in the exposure wavelength of equal to or less than 250nm, especially with ArF excimer laser light (193nm) and F 2 excimer laser light (157nm). SOLUTION: The photosensitive composition contains a compound (A) which contains carboxyl group and generates acid under irradiation of active light ray or radiation, and a resin (B) which is decomposed under the action of acid containing at least one kind of acetal group of acid decomposition and tertiary ester group to increase solubility in an alkali developing liquid. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供在等于或小于250nm的曝光波长下具有较好性能的PEB温度依赖性较小的光敏组合物，特别是在ArF准分子激光（193nm）和F 2 准分子激光（157nm）。光敏组合物含有含有羧基的化合物（A），在活性光线或辐射照射下产生酸，并且在酸的作用下分解的树脂（B）含有至少一种缩醛基酸分解和叔酯基，以增加碱显影液中的溶解度。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004341062A Positive resist composition 审中-公开
公开(公告)号：JP2004341062A
公开(公告)日：2004-12-02
申请号：JP2003134806
申请日：2003-05-13
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： SATO KENICHIRO , KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F20/28 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition having excellent side lobe margin characteristics in microphotofabrication using far UV light, in particular, ArF excimer laser light. SOLUTION: The resist composition contains: resin which contains a repeating unit derived from an isosorbide (meth)acrylate and of which the dissolving rate to an alkaline developing solution is increased by the effect of an acid; and a compound which has a naphthalene skeleton and generates an acid by being irradiated with active rays or radiation. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2004333925A Positive resist composition 审中-公开
公开(公告)号：JP2004333925A
公开(公告)日：2004-11-25
申请号：JP2003130385
申请日：2003-05-08
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： SATO KENICHIRO , KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F20/28 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition which solves problems in a technique for improving performance proper to microphotofabrication using far ultraviolet light, particularly ArF excimer laser light, to specifically provide a positive resist composition having small mask coverage dependence, high post-coating delay stability (PCD) and high post-exposure delay stability (PED), and to further provide a positive resist composition excellent also in process margin. SOLUTION: The positive resist composition comprises (A) resin containing a repeating unit derived from isosorbide (meth)acrylate and having a solubility rate in an alkali developing solution increased by the action of an acid, (B) an aromatic-group-free sulfonium salt compound which generates an acid upon irradiation with an actinic ray or radiation, and (C) a solvent. COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2004233661A Stimulus sensitive composition and compound 有权
标题翻译：刺激性敏感组合物和化合物
公开(公告)号：JP2004233661A
公开(公告)日：2004-08-19
申请号：JP2003022318
申请日：2003-01-30
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： KODAMA KUNIHIKO
IPC分类号： G03F7/004 , C07C381/12 , C07D333/46 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a stimulus sensitive composition having high sensitivity and high resolving power and exhibiting good profile, to provide a photosensitive composition having high sensitivity at ≤200 nm, particularly at exposure wavelength of F 2 laser light (157 nm), and also to provide a new compound which generates an acid or a radical under an external stimulus so as to provide these compositions. SOLUTION: The stimulus sensitive composition contains a compound (A) which generates an acid or a radical under an external stimulus and has a carbonyl group and a fluorine atom, wherein the compound (A) is particularly a compound having a cationic moiety and an anionic moiety and having a carbonyl group and a fluorine atom in the cationic moiety. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了提供具有高灵敏度和高分辨能力并且表现出良好外形的刺激敏感组合物，以提供在≤200nm处具有高灵敏度的感光组合物，特别是在曝光波长F 2 < / SB>激光（157nm），并且还提供在外部刺激下产生酸或自由基以提供这些组合物的新化合物。刺激敏感组合物含有在外部刺激下产生酸或自由基并具有羰基和氟原子的化合物（A），其中化合物（A）特别是具有阳离子部分的化合物和阴离子部分，并且在阳离子部分中具有羰基和氟原子。版权所有（C）2004，JPO＆NCIPI

9. 发明专利

JP2004145298A Positive resist composition and method for forming pattern by using the same 有权
公开(公告)号：JP2004145298A
公开(公告)日：2004-05-20
申请号：JP2003315478
申请日：2003-09-08
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI , SATO KENICHIRO , KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F220/18 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition which can be suitably used for microphotofabrication using far UV rays, in particular ArF excimer laser light and which eliminates problems of line edge roughness and pattern collapse. SOLUTION: The positive resist composition contains: (A) a resin which contains specified two kinds of repeating units having an aliphatic cyclic hydrocarbon group in the side chain and which increases its solubility rate with an alkali developer solution by the effect of an acid; and (B) a specific sulfonium compound having a specific structure which produces an acid by irradiation of active rays or radiation. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2004126014A Positive resist composition 审中-公开
标题翻译：积极抵抗组成
公开(公告)号：JP2004126014A
公开(公告)日：2004-04-22
申请号：JP2002287392
申请日：2002-09-30
申请人： Fuji Photo Film Co Ltd , 富士写真フイルム株式会社
发明人： NISHIYAMA FUMIYUKI , SATO KENICHIRO , KODAMA KUNIHIKO
IPC分类号： G03F7/039 , C08F220/12 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition having excellent shortening performance and process margin performance, and suitable for microfabrication which uses far-UV light, in particular, ArF excimer laser light. SOLUTION: The positive resist composition contains: a resin which has an aliphatic cyclic hydrocarbon group in the side chain and specified two repeating units and which increases the solubility rate with an alkali developer solution by the effect of an acid; and a specified trialkylsulfonium compound which generates an acid by irradiation of active rays or radiation. COPYRIGHT: (C)2004,JPO

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