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    • 11. 发明专利
    • DATA TRANSFER AND CONTROL SYSTEM
    • JPS61264833A
    • 1986-11-22
    • JP10655185
    • 1985-05-18
    • FUJITSU LTD
    • INOUE KOICHISATO KEIJIIKESAKA MORIO
    • G06F13/00G06F15/16G06F15/163H04L12/00
    • PURPOSE:To attain efficient data transfer by providing a bit pattern field representing a destination node to a transfer packet and using a bit pattern so as to designate a reception node thereby designating the destination nodes of an optional combination. CONSTITUTION:A data inputted to an input terminal 21 is inputted to a shift register 22 and shifted synchronously with a clock. On the other hand, the data is inputted to a detector 23 to detect the head of a packet and a comparator 28 is made enable with a delay by a destination node designation field length by a delay device 25. A value for sending end detection, all 1 is stored in a comparison value register 27 and the comparator 28 compares the said value with the content of the register 22. When the are equal, an FF 29 is set and the sending of a new packet is indicated and in case of reset, the transfer of the input data as it is indicated. The transfer data of the new packet is loaded to a shift register 31 and outputted to a link via an AND circuit 33, an OR circuit 34 and a buffer 35.
    • 12. 发明专利
    • RISING SYSTEM FOR DATA PROCESSING SYSTEM
    • JPS61206048A
    • 1986-09-12
    • JP4794885
    • 1985-03-11
    • FUJITSU LTD
    • INOUE KOICHISATO KEIJIIKESAKA MORIO
    • G06F11/22G06F1/00G06F15/16G06F15/177
    • PURPOSE:To prevent that cutting and dividing are executed from a system at the time of the defect and the system as whole is immediately down by providing the action checking device and the device to connect and cut away with the status bus at respective processors. CONSTITUTION:There are processors 21-24, a host processor judges the information of a status bus 33 and checks successively a processor. The host processor gives a checking starting signal and a suitable time passes, and thereafter, the satisfactory status does not return or the abnormality is found at the time of checking the status itself, and then, for the processor, a cutting-away instruction line 34-2 is temporarily made into 0, and an FF 63 is cut away from the bus 33 through logical arithmetic circuits 72, 73, FF 61 and 62 and a logical element 64. After all processors are checked, the action rise of the system is executed by the resetting line 34-3. The processor, which is judged to defective by checking until then, is cut away, does not record the unfair information in the status bus since the status bus is cut away.
    • 14. 发明专利
    • SEMICONDUCTOR LIGHT EMITTER
    • JPH06120616A
    • 1994-04-28
    • JP13610991
    • 1991-06-07
    • FUJITSU LTD
    • SATO KEIJI
    • H01L27/15H01S5/00H01S5/026H01S3/18
    • PURPOSE:To prevent the intensity drop of a signal light even if the modulated signal light is taken out as a monitor light by integrating first and second electric field absorbing light modulators, which connect with each other and have the same composition and the same structure, at both light emitting end faces of a lambda/4 shift distributed-feedback type semiconductor laser. CONSTITUTION:The light generated in a semiconductor laser part enters a first light modulator and a second modulator. The electrode 13 in the first light modulator and the electrode 14 in the second light modulator are connected to the same modulation signal line. Thereby, the light modulation in the first light modulator and the light modulation in the second light modulator become the same, so the modulated signal lights emitted from each become the same, and it will do to use one as an essential signal light, and use the other as a monitor light. By doing it, this way, the intensity drop of the signal light becomes so little that it can practically neglected, and the intensity of a monitor light becomes enough large.
    • 16. 发明专利
    • EXPRESSING SYSTEM AND INFERENCE CONTROL SYSTEM OF KNOWLEDGE
    • JPH0358129A
    • 1991-03-13
    • JP19465389
    • 1989-07-26
    • FUJITSU LTDTOYOTA MOTOR CORP
    • MIYANOCHI SHOICHISATO KEIJIOKUDA NORIKO
    • G06F9/44G06N5/04
    • PURPOSE:To facilitate constitution and maintenance of a knowledge base and to easily hold the compatibility of knowledge by constituting a knowledge expression unit including a hypothesis, information related to higher-order and lower-order hypotheses linked to the hypothesis, and information related to a successful condition for success of the hypothesis. CONSTITUTION:Knowledges in a knowledge base KB 1 are divided to hierarchies as modules and constitute a tree structure as the whole. A unit knowledge in the knowledge base KB 1 includes information of a name MEI of each hypothesis and higher-order and lower-order links RKU and RKD as names of higher- order and lower-order hypotheses linked to the hypothesis. Further, it consists of data of successful condition SJK for success of the hypothesis and a state value JTT as the discrimination result of the successful condition SKJ as the discrimination result of the successful condition SKJ besides these information. Thus, constitution and maintenance of the knowledge base are facilitated, and the compatibility of knowledge is easily held at the time of the change or the like of the tree structure.
    • 17. 发明专利
    • PIN PHOTODIODE AND MANUFACTURE THEREOF
    • JPH0353566A
    • 1991-03-07
    • JP18960289
    • 1989-07-21
    • FUJITSU LTD
    • SATO KEIJI
    • H01L31/10
    • PURPOSE:To make a PIN photodiode high in sensitivity to light of a wide wavelength range and to enable it to have an aperture large in diameter by a method wherein light incident through a first electrode layer side is absorbed by an I-type epitaxial layer to generate a photocurrent. CONSTITUTION:A P -type InP region 12 is formed as thick as 10-100mum by diffusing Zn into the surface of a semi-insulating InP substrate 10 400mum in thickness. Then, an N -type InGaAs layer 14 2mum or so thick and an N -type InP layer 16 0.3mum or so in thickness are successively formed through an epitaxial growth method. Next, the rear side of the semi-insulating substrate 10 is polished to expose the P -type InP region 12. Thereafter, an AuGe/Au electrode layer 18 provided with an opening through which light is incident is formed on the N -type InP layer 16, and an electrode layer 20 of AuZn or TiPtAu is formed on the undersides of the polished semi-insulating substrate 10 and the P -type InP region 12.
    • 19. 发明专利
    • OPTICAL SEMICONDUCTOR PHOTODETECTOR
    • JPH01143364A
    • 1989-06-05
    • JP29986487
    • 1987-11-30
    • FUJITSU LTD
    • SATO KEIJI
    • H01L31/107H01L31/10
    • PURPOSE:To prevent carrier from running outward and to accurately obtain quantum efficiency in an avalanche photodiode by forming one conductivity type peripheral edge protruding to a low concentration one conductivity type side at the peripheral edge of a multiplication layer. CONSTITUTION:A low concentration one conductivity type layer 12 and a high concentration one conductivity type multiplication layer 13 are formed on one conductivity type silicon substrate 11, and a reverse conductivity type diffused layer 14 is formed on the layer 13. In an avalanche photodiode of such a configuration, one conductivity type peripheral edge 13A protruding at the layer 12 is formed along the outer edge of the layer 13. Thus, since it can prevent carries from flowing out from both sides of the layer 13, an optical semiconductor photodetector which can accurately obtain quantum efficiency can be attained.