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    • 11. 发明专利
    • CIRCUIT PLATE FOR SLIDINGLY MOVING CONTACT POINT
    • JPH01278702A
    • 1989-11-09
    • JP10777088
    • 1988-05-02
    • COPAL CO LTD
    • TSUKADA TAKESHIOYAMA YOSHIHIROYOSHIHARA TOSHIOOTSU NOBUYUKI
    • H01C10/30
    • PURPOSE:To improve the lubricating property of a circuit pattern without generation of the noise of sliding movement and the defective insulation with the neighboring circuits by a method wherein the lubrication layer, on which either of metal organic resistor paste and metal organic precious metal paste is printed and sintered, is provided on the part where the sliding contact point of a thick film circuit pattern will be slidingly contacted. CONSTITUTION:An electrode 13 is formed on an under-glazed glass layer 12 by printing and sintering conductive paste thereon, and a resistor pattern 14 is formed by printing and sintering. Besides, on the surface of this resistor pattern 14, a resistor lubricating layer 16 is formed as a lubrication layer. As the resistor lubricating layer 16 is formed on the resistor pattern 14 using the metal organic resistance paste mainly composed of gold having excellent lubricating property, the recesses and projections on the resistor pattern 14 can be brought into a lubricous state by the resistor lubrication layer 16. As a result, there is no possibility of generation of defective insulation with the neighboring circuits, and the generation of noise of sliding movement, the abrasion at the contact point of sliding movement can be suppressed, and the fluctuation in resistance value caused by the abrasion of the circuit pattern can also be prevented.
    • 12. 发明专利
    • MANUFACTURE OF FERROMAGNETIC MAGNETORESISTANCE EFFECT DEVICE
    • JPH01200682A
    • 1989-08-11
    • JP2396488
    • 1988-02-05
    • COPAL CO LTD
    • KIMURA YOSHIYUKIKITAZAWA OSAMUOTSU NOBUYUKI
    • H01L43/08
    • PURPOSE:To form a best film by the small number of processes and easily by a method wherein an electrode wiring layer is formed on an insulating substrate, a ferromagnetic thin-film layer is then formed and a passivating film is coated lastly in order to widen the range of a film formation condition. CONSTITUTION:A fill is formed by evaporating aluminum or the like on an insulating substrate 1 which is non-conductive and whose surface is smooth by a sputtering method, an ion implantation method or the like so that the surface can be smooth. A taper etching operation is executed so that a stepped part can become gentle; an electrode wiring layer 2 of aluminum or the like is formed; after that, a ferromagnetic thin-film layer 3 is formed by an electron beam evaporation method, a sputtering method or the like; after that, a passivating film 4 is formed and coated. Because an interlayer insulating film layer is not required, the number of manufacturing processes can reduced; because the problem of an internal stress is not caused, it is possible to prevent a characteristic from being deteriorated and a film from being stripped off.