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11. 发明专利

JPH06104182A METHOD AND APPARATUS FOR FILLING GAS 失效
公开(公告)号：JPH06104182A
公开(公告)日：1994-04-15
申请号：JP27506692
申请日：1992-09-17
申请人： CKD CORP
发明人： SUDO YOSHIHISA , NITTA SHINICHI
IPC分类号： F17C5/00 , F17C5/06 , H01L21/205
摘要： PURPOSE:To contract a gas filling time and reduce a cost, by injecting the gas into a container performing at least once the changeover of gas filling modes with respect to a plurality of gas filling modes for injecting the gas into the container. CONSTITUTION:A wafer to be subjected to a dry etching processing is fixed in a chamber 1, and the chamber 1 is sealed. Then, a closing valve 12 is released by a sequencer 13, and the air, etc., in the chamber 1 are sucked by a vacuum pump 5 via a suction port 1d. When the internal vacuum state of the chamber 1 becomes a predetermined one, the dry etching processing is performed. Thereafter, an inert gas F for destroying the vacuum state is injected into the chamber 1 from a blow-off port 1c. At this time, initially, the inert gas F is injected in a constant-flow-rate mode, and when the pressure in the chamber 1 becomes a predetermined value, the constant-flow-rate mode is changed over into a time-proportional mode or into a constant-draft mode. thereby, since a gas filling time can be contracted without increasing the number of upflung particles, the cycle time of the whole of a semiconductor manufacturing process can be contracted.

12. 发明专利

JP2001227657A PROCESS GAS SUPPLY UNIT 失效
公开(公告)号：JP2001227657A
公开(公告)日：2001-08-24
申请号：JP2000034947
申请日：2000-02-14
申请人： CKD CORP
发明人： SUDO YOSHIHISA , GOSHIMA KENICHI , NITTA SHINICHI , MATSUOKA YUJI , ITO MINORU
IPC分类号： F16K27/00 , F16K11/00
摘要： PROBLEM TO BE SOLVED: To provide a compact and lightweight gas supply unit. SOLUTION: This process gas supply unit 1 constituted by mounting a check valve 3, a purge valve 4, regulator 5 with a cut-off function, a mass flow controller 6 and a gas supply valve 7 on one base block 2 formed with a passage.

13. 发明专利

JPH07286720A GAS SUPPLYING APPARATUS 失效
公开(公告)号：JPH07286720A
公开(公告)日：1995-10-31
申请号：JP10477994
申请日：1994-04-18
申请人： CKD CORP
发明人： BANDOU HIROSHI , NITTA SHINICHI , KOKETSU MASAYUKI
IPC分类号： F23N5/02 , F23K5/00 , F23N1/00
摘要： PURPOSE:To easily remove or attach a flow control valve with a mass flowmeter by providing coupling means for attaching the valve to input and output blocks by an operation from above. CONSTITUTION:Heat of a tapelike heater 51 is transmitted to a solenoid valve 53 with a mass flowmeter via a heat transfer block to be brought into close contact by a pressing spring 2 provided under the valve 53. Heat of the heater 51 is transferred to an input block 10 and an output block 11 via a sub-heat transfer block 3 attached to the blocks 10, 11. The blocks 1, 3 are held at holding grooves 6, 7 opened above, and the valve 53 is mounted via mounting blocks 24, 25 attached or detached only by an operation from above. Thus, a gas passage in a gas supplying apparatus can be uniformly heated to be heat insulated at a predetermined temperature or higher, and gas which is easily liquefied can be effectively supplied in a necessary quantity without liquefying it.

14. 发明专利

JP2007051563A The chemical supply system 有权
标题翻译：化学供应系统
公开(公告)号：JP2007051563A
公开(公告)日：2007-03-01
申请号：JP2005235906
申请日：2005-08-16
申请人： Ckd Corp , シーケーディ株式会社
发明人： NITTA SHINICHI , KATO TAKASHI , NABEI TATSUMI , SAKAI ATSUYUKI
IPC分类号： F04B49/06 , F04B43/08
摘要： PROBLEM TO BE SOLVED: To precisely control the discharge quantity of a drug solution when discharging the drug solution based on the capacity change of a pump chamber followed by the action of the variable capacity member such as a bellows, etc. SOLUTION: A chemical supply pump 10 comprises the bellows 15 stored in a pump housing 11. The pump chamber 13 and a pressure applying chamber 14 are demarcated by the bellows 15. The pressure applying chamber 14 is connected to an electropneumatic regulator 28. The chemical supply pump 10 sucks or discharges the drug solution based on the capacity change of the pump chamber 13 followed by the displacement of the bellows 15. Before the opening of a discharge valve 25, the controller 40 operates the operation air pressure by the electropneumatic regulator 28 so as to make the pump inside pressure be the same as the discharge side pressure, thereby regulating the pump inside pressure. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：基于泵室的容量变化，随后可变容量构件如波纹管等的作用，精确地控制药液排出时的排出量。
解决方案：化学品供应泵10包括存储在泵壳体11中的波纹管15.泵室13和压力施加室14由波纹管15划定。压力施加室14连接到电动气动调节器28。化学品供给泵10基于泵室13的容量变化，随后波纹管15的位移吸取或排出药液。在打开排出阀25之前，控制器40通过电动气动调节器操作空气压力以使泵的内部压力与排出侧压力相同，从而调节泵的内部压力。版权所有（C）2007，JPO＆INPIT

15. 发明专利

JP2006316711A Chemical liquid supply system and chemical liquid supply pump 审中-公开
标题翻译：化学液体供应系统和化学液体供应泵
公开(公告)号：JP2006316711A
公开(公告)日：2006-11-24
申请号：JP2005140705
申请日：2005-05-13
申请人： Ckd Corp , Okutekku:Kk , シーケーディ株式会社 , 株式会社オクテック
发明人： OKUMURA KATSUYA , NITTA SHINICHI , NABEI TATSUMI , SUGATA KAZUHIRO , SAKAI ATSUYUKI
IPC分类号： F04B43/06 , B05C11/10 , H01L21/027
CPC分类号： F04B43/06 , F04B43/084 , F04B43/10
摘要： PROBLEM TO BE SOLVED: To provide a chemical liquid supply system controlling the suction or discharge flow rate of a chemical liquid with high accuracy and eliminating an adverse effect caused by heat generation.
SOLUTION: A bellows type partition member 12 is received as a capacity variable member in a pump housing 11 of a chemical liquid supply pump 10, and a pump chamber 13 and a pressure acting chamber 14 are separately formed by the bellows type partition member 12. The pressure acting chamber 14 is connected with an electropneumatic regulator 28. A rod 33 is coupled to the bellows type partition member 12 and a displacement of the rod 33 is detected by a position detector 36. A controller 40 sets a target operation amount of the bellows in suction or discharge of the chemical liquid and controls the electropnuematic regulator 28 based on a difference between the target operation amount and an actual operation amount obtained from a detection result by the position detector 36.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种以高精度控制化学液体的吸入或排出流量并消除由发热引起的不利影响的化学液体供给系统。解决方案：波纹管式分隔构件12作为容量可变构件容纳在化学液体供应泵10的泵壳体11中，泵室13和压力作用室14由波纹管型分隔件压力作用室14与电动气动调节器28连接。杆33联接到波纹管式分隔构件12，杆33的位移由位置检测器36检测。控制器40设定目标操作波纹管在化学液体的吸入或排出中的量，并且基于由位置检测器36的检测结果获得的目标操作量与实际操作量之间的差来控制电动调节器28。）2007，JPO＆INPIT

16. 发明专利

JPH08185229A MASS FLOW CONTROLLER 失效
公开(公告)号：JPH08185229A
公开(公告)日：1996-07-16
申请号：JP34031694
申请日：1994-12-27
申请人： CKD CORP
发明人： SUDO YOSHIHISA , ITO MINORU , NITTA SHINICHI , KUDO MASAYUKI
IPC分类号： F16K31/128 , G05D7/06
摘要： PURPOSE: To provide a mass flow controller which can accurately control the position of a valve body by feeding back a measured mass flow rate and has a complete cutting-off function. CONSTITUTION: The mass flow controller, having a mass flowmeter part 2 which measures the mass flow rate of fluid flowing in a conduit 15 from the values of currents flowing to two resistance bodies R1 and R2 wound around the duct 15 independently of each other and varying in resistance value with the temperature of the fluid and a proportional valve mechanism which is sit in the passage of the fluid and varies the flow rate by varying the gap formed with a valve seat 27, has diaphragm 24 formed integrally with the valve body 17, a solenoid valve 35 for supply and a solenoid valve 36 for discharge which control compressed air operating on the diaphragm 24 to change the position of the valve body, and a control means 32 and a pulse converting circuit 33 which control the solenoid valve 35 for supply and solenoid valve 36 for discharge on the basis of the mass flow rate of the fluid measured by the mass flowmeter part 2 and feed the mass flow rate of the fluid back to a specific value.

17. 发明专利

JP2010165772A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010165772A
公开(公告)日：2010-07-29
申请号：JP2009005584
申请日：2009-01-14
申请人： Toshiba Corp , 株式会社東芝
发明人： TSUCHIYA NORIHIKO , SAIDA SHIGEHIKO , UDO SUKEMUNE , NITTA SHINICHI
IPC分类号： H01L21/26 , H01L21/265 , H01L21/28 , H01L21/3205 , H01L21/324 , H01L21/8247 , H01L23/52 , H01L27/10 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for suppressing the occurrence of crystal defects of the semiconductor device.
SOLUTION: A trench for STI is formed on a wafer, and an insulating film is buried in the trench. Then, oxygen is introduced to the surface of the wafer. For introducing oxygen, RTO (Rapid Thermal Oxidation) is performed to the surface of the wafer in an atmosphere of 100% oxygen at 1,100°C for 60 seconds. After that, high-temperature annealing is performed. In an SRAM manufacturing step, the introduction of oxygen is performed before a high-temperature annealing step and an ion implanting step of source/drain sections with the risk of causing dislocation. Thus, the crystal strength of the wafer can be enhanced, and the dislocation caused by the annealing step and the ion implanting step can be suppressed.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种制造用于抑制半导体器件的晶体缺陷发生的半导体器件的方法。解决方案：在晶片上形成用于STI的沟槽，并且绝缘膜被埋在沟槽中。然后，将氧气引入到晶片的表面。为了引入氧气，在1100℃的100％氧气氛中，对晶片的表面进行RTO（快速热氧化）60秒。之后，进行高温退火。在SRAM制造步骤中，在高温退火步骤和源极/漏极部分的离子注入步骤之前进行氧的引入具有引起位错的风险。因此，可以提高晶片的晶体强度，并且可以抑制由退火步骤和离子注入步骤引起的位错。版权所有（C）2010，JPO＆INPIT

18. 发明专利

JP2001077168A METHOD FOR EVALUATING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001077168A
公开(公告)日：2001-03-23
申请号：JP25462799
申请日：1999-09-08
申请人： TOSHIBA CORP
发明人： NITTA SHINICHI
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To evaluate good or bad conditions of a high quality wafer with high precision by a method wherein in order to detect a junction leak current specifying active energy, a junction leak current evaluation is made by use of pn junction of a sufficiently small area. SOLUTION: When a quality evaluation of a semiconductor wafer is made by a junction leak current evaluation, a test element group is formed on a wafer, and a pn junction leak current included in cells of the test element group is measured, and the precision depends on an area of the pn junction and the number of cells included in the cells of the test element group. As a method for evaluating a semiconductor substrate, in order to detect the junction leak current in which active energy Ea is 0.1 eV to 0.4 eV, the junction leak current evaluation is made by use of the test element group comprising a plurality of cells containing respectively the pn junction of a sufficiently small area, more specifically the pn junction having an area of 5 mm2 or less.

19. 发明专利

JPH10209413A SOLID-STATE IMAGE PICK UP DEVICE 失效
公开(公告)号：JPH10209413A
公开(公告)日：1998-08-07
申请号：JP855297
申请日：1997-01-21
申请人： TOSHIBA CORP
发明人： NITTA SHINICHI
IPC分类号： H01L27/14 , H04N5/335
摘要： PROBLEM TO BE SOLVED: To provide a solid-state image pick up device, which can miniaturize and thin the whole, easily ensure the positional accuracy of the light-receiving part of the solid-state image pick up element, and reduce the cost. SOLUTION: An optical window member 1 having an element housing a recess 3 for housing a solid-state image pick up element 2 in its interior is formed of a light-transmitting material. Wirings 6 for element use are formed on the inner surface 5 of the material 1. The element 2 is hermetically sealed in the interior of the recess 3 with a sealing resin layer 4. The element 2 and the wirings 6 are electrically connected with each other through bumps 7.

20. 发明专利

JP2011249627A Semiconductor wafer pattern exposure method 审中-公开
标题翻译： SEMICONDUCTOR WAFER PATTERN EXPOSURE METHOD
公开(公告)号：JP2011249627A
公开(公告)日：2011-12-08
申请号：JP2010122265
申请日：2010-05-28
申请人： Toshiba Corp , 株式会社東芝
发明人： UDO YUSUKE , NITTA SHINICHI , SUZUKI MASARU
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wafer pattern exposure method capable of increasing the number of chips obtainable from a semiconductor wafer.SOLUTION: A semiconductor wafer pattern exposure method is such that, when a circuit pattern is exposed to a semiconductor wafer 18 while sequentially moving a rectangle-shaped exposure unit area 35 in a first direction parallel to the short sides of the rectangle, the semiconductor wafer 18 is tilted during exposure so that the surface roughness in the exposure unit area 35 due to an uneven thickness of the semiconductor wafer 18 will become smaller on a focal plane of exposure. In the above method, an edge exclusion area 31 of the semiconductor wafer 18 defined for excluding the peripheral section thereof from the areas for which exposure or the focal plane of exposure is determined, is set in such a way that a first exclusion width d1 in the first direction is smaller than a second exclusion width d2 in a second direction at right angles to the first direction. And, within the exposure unit area 35 not including the edge exclusion area 31, the focal plane of exposure is set by tilting the semiconductor wafer 18 so that the surface roughness becomes smaller on the focal plane of exposure.
摘要翻译：要解决的问题：提供能够增加从半导体晶片获得的芯片数量的半导体晶片图案曝光方法。解决方案：半导体晶片图案曝光方法是这样一种电路图案在与矩形的短边平行的第一方向依次移动矩形的曝光单元区域35时暴露于半导体晶片18的情况下，半导体晶片18在曝光期间倾斜，使得由于半导体晶片18的厚度不均匀而导致的曝光单元区域35中的表面粗糙度在曝光焦平面上变小。在上述方法中，将确定用于排除其外围部分的半导体晶片18的边缘排除区域31设置为使曝光或焦平面曝光的区域被确定，使得第一排除宽度d1 在与第一方向成直角的第二方向上，第一方向小于第二排除宽度d2。并且，在不包括边缘排除区域31的曝光单元区域35内，通过使半导体晶片18倾斜来设定曝光焦平面，使得曝光焦平面上的表面粗糙度变小。版权所有（C）2012，JPO＆INPIT

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