专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JP2001345280A METHOD OF CHEMICAL VAPOR DEPOSITION AND CHEMICAL VAPOR DEPOSITION APPARATUS 失效
公开(公告)号：JP2001345280A
公开(公告)日：2001-12-14
申请号：JP2001088652
申请日：2001-03-26
申请人： MATSUMURA HIDEKI , ANELVA CORP
发明人： MATSUMURA HIDEKI , MASUDA ATSUSHI , ISHIBASHI KEIJI , HONDA NAMIKO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus and a method of chemical vapor deposition in which reproducibility and mass production efficiency are improved by preventing deterioration of a heating element caused by raw-material gases to stabilize deposition environment in a CVD apparatus in which a film is formed on a substrate by generating active species of introduced gases introduced into a vacuum vessel by the heating element. SOLUTION: Inside of the vacuum vessel is separated by a barrier into an active-species generating space and a deposition processing space. The material gases fed to the active- species generating space are decomposed and activated by the heating element arranged in the active-species generating space, and the activated species are introduced into the deposition processing space specifically through piercing holes formed in the barrier. The raw- material gases are fed to a barrier inner space which is formed in the barrier and which is separated from the active-species generating space. The inner space is spatially connected to the deposition processing space via a plurality of diffusion holes, and the raw-material gases are introduced into the deposition processing space via the diffusion holes. In the deposition processing space, a chemical reaction between the material gases and the active species generated by decomposition and activation by the heating element takes place to deposit a film on the substrate. In such a way, the chemical vapor deposition apparatus and the method of chemical vapor deposition achieve the goals.

12. 发明专利

JP2008103748A Catalyst chemistry vapor deposition equipment 有权
标题翻译：催化剂蒸气沉积设备
公开(公告)号：JP2008103748A
公开(公告)日：2008-05-01
申请号：JP2007299648
申请日：2007-11-19
申请人： Canon Anelva Corp , Hideki Matsumura , キヤノンアネルバ株式会社 , 英樹松村
发明人： MATSUMURA HIDEKI , SAKURAI TAKEHIRO , AOSHIMA SHOICHI , SAKURAI KAZUO
IPC分类号： H01L21/31 , C23C16/44 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a catalyst-assisted chemical vapor deposition apparatus that can make a low-temperature process possible by reducing heat radiation to a substrate.
SOLUTION: A gas supply system provides gas for vapor deposition into a treatment container, and let the gas pass near the surface of a thermal catalyst 3 heated by a heating arrangement at a predetermined temperature. The gas for vapor deposition reaches a substrate 9 held by a substrate holder, and a predetermined thin film is created on the substrate 9 making use of the reaction of the gas in which the thermal catalyst 3 is involved. The thermal catalyst 3 is in the shape of a coil, and the axial direction of the coil is in parallel with the surface of the substrate 9. As to the thermal catalyst 3, if the diameter of a virtual cylindrical surface formed by the coil is set to be R, and the width of an adjacent wire is set to be p, p/R is ≤5.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种催化剂辅助的化学气相沉积装置，其可以通过减少对基板的热辐射使低温过程成为可能。解决方案：气体供应系统提供用于气相沉积的气体到处理容器中，并使气体通过在预定温度下由加热装置加热的热催化剂3的表面附近。用于气相沉积的气体到达由衬底保持器保持的衬底9，并且利用其中涉及热催化剂3的气体的反应在衬底9上产生预定的薄膜。热催化剂3为线圈形状，线圈的轴向与基板9的表面平行。对于热催化剂3，如果由线圈形成的虚拟圆柱形表面的直径为设为R，相邻线的宽度设为p，p / R≤5。版权所有（C）2008，JPO＆INPIT

13. 发明专利

JP2000073172A CATALYTIC CHEMICAL VAPOR DEPOSITION APPARATUS 失效
公开(公告)号：JP2000073172A
公开(公告)日：2000-03-07
申请号：JP25943298
申请日：1998-08-27
申请人： MATSUMURA HIDEKI , ANELVA CORP
发明人： MATSUMURA HIDEKI , SAKURAI TAKEHIRO , AOSHIMA SHOICHI , SAKURAI KAZUO
IPC分类号： C01B21/068 , B01J12/02 , B01J35/02 , C23C16/30 , C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To enable the additional temp. lowering of the process of a catalytic chemical vapor deposition apparatus by lessening heat radiation to a substrate. SOLUTION: Gas for vapor deposition is supplied into a treatment vessel by a gas supplying system in such a manner that the gas for vapor deposition passes near the surface of a thermal catalyst medium 3 heated to prescribed temp. by a heating mechanism 30. The gas for vapor deposition arrives at the substrate 9 held at a substrate holder 4 and a prescribed thin film is formed on the substrate 9 by utilizing the reaction of the gas for vapor deposition in which the thermal catalyst medium 3 participates. The thermal catalyst medium 3 consists of a belt-like plate material and is so disposed that its transverse direction is made perpendicular to the substrate 9. This plate material is bent at the transverse line as the folding line. The angle allowing for the thermal catalyst medium 3 diminishes from one point on the surface of the substrate 9 and, therefore, the heat radiation to the substrate 9 may be lessened. Since a large surface area in obtd. by a small occupying space, a sufficient thermal catalytic effect may be obtd. as well.

14. 发明专利

JPH1154441A CATALYTIC CHEMICAL EVAPORATION DEVICE 失效
公开(公告)号：JPH1154441A
公开(公告)日：1999-02-26
申请号：JP22100897
申请日：1997-08-01
申请人： ANELVA CORP
发明人： MURAKAMI SHUNICHI , NOMURA HIDEJI , MATSUMURA HIDEKI
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a practical device producing a thin film by using a method of catalytic chemical evaporation. SOLUTION: A substrate holder 4 which holds a substrate 9 forming a film on it and a catalytic vessel 5, containing a thermocatalyst 3 in a space separated from the space set by the substrate 9 are provided in the film-forming chamber 1, exhausted by a exhausting system 11. A gas-supply means 2 supplies a raw gas for making a contact with the thermocatalyst 3 kept heated by a heater supply 31 at a predetermined temperature, a chemical seed generated by catalytic reaction between the raw gas and the thermo catalyst 3 is spouted from the gas spouting nozzle 50 to the surface of the substrate 9, and a predetermined thin film is deposited. The film deposition on the exposed region other than the substrate 9 in the film-forming chamber 1 is suppressed since the heating substrate 9 is suppressed by the thermocatalyst 3.

15. 发明专利

JPH1083988A THIN FILM FORMING METHOD, DEVICE, AND SEMICONDUCTOR DEVICE OF SEMICONDUCTOR-INSULATOR JUNCTION STRUCTURE 失效
公开(公告)号：JPH1083988A
公开(公告)日：1998-03-31
申请号：JP25767596
申请日：1996-09-06
申请人： MATSUMURA HIDEKI , NEC CORP , ANELVA CORP
发明人： MATSUMURA HIDEKI , IZUMI AKIRA , MASUDA ATSUSHI , NASHIMOTO YASUNOBU , MIYOSHI YOSUKE , NOMURA HIDEJI , SAKURAI KAZUO , AOSHIMA SHOICHI
IPC分类号： H01L21/205 , C23C16/02 , C23C16/44 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a thin film forming method and a device where interface defects can be decreased and a film can be formed at a lower temperature, and to realize a semiconductor device of semiconductor-insulator junction structure which is low in interfacial level density. SOLUTION: Surface treatment gas such as hydrogen gas is introduced through a surface treatment gas inlet system into a processing chamber 1, so as to pass near the surface of a thermal catalyst 5 provided adjacent to a substrata 20 disposed in the processing chamber 1. Surface treatment gas generates active seeds by a contact decomposing reaction caused by the thermal catalyst 5, and the active seeds reach to the surface of the substrate 20 to carry out a surface treatment such as removal of a natural oxide film. Thereafter, film forming gas is introduced into the processing chamber 1 through a film forming gas inlet system 3 so as to be fed to the substrate 20 passing near the surface of the thermal catalyst 5, whereby a prescribed insulating film is formed on the surface of the semiconductor substrate 20 through a catalyst CVD method. An interface between the formed insulating film and a semiconductor is of interfacial level density 1012eV-1cm-2 or below, so that a semiconductor device of high performance can be realized.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式