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121. 发明专利

JP5765892B2 垂直共振器型面発光レーザ、それを用いた画像形成装置有权
标题翻译：垂直腔表面发射激光器，使用其的图像形成装置
公开(公告)号：JP5765892B2
公开(公告)日：2015-08-19
申请号：JP2010121228
申请日：2010-05-27
申请人：キヤノン株式会社
发明人：稲生耕久 , 井久田光弘 , 竹内哲也
IPC分类号： H01S5/183
CPC分类号： H01S5/187 , B82Y20/00 , G03G15/04 , G03G15/04072 , G03G15/326 , H01S5/18311 , H01S5/18358 , H01S5/3022 , H01S5/34326 , H01S5/3436 , H01S5/423

123. 发明专利

JP2014112654A Nitride semiconductor surface emitting laser and manufacturing method of the same 有权
标题翻译：氮化物半导体表面发射激光及其制造方法
公开(公告)号：JP2014112654A
公开(公告)日：2014-06-19
申请号：JP2013209355
申请日：2013-10-04
申请人： Canon Inc , キヤノン株式会社
发明人： KAWASHIMA TAKESHI
IPC分类号： H01S5/183 , H01L21/205 , H01S5/323
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/3063 , H01S5/34333 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor surface emitting laser which can inhibit a memory effect occurring when an intermediate layer is Mg doped and which can inhibit decrease in luminous efficiency.SOLUTION: A surface emitting laser in which a plurality of nitride semiconductor layers including a lower reflector 102, a plurality of active layers 104 for generating gains by current injection and an upper reflector 107 are stacked on a substrate 101 comprises an n-type spacer layer 103 formed between the lower reflector and the active layer closest to the lower reflector among the plurality of active layers; a p-type space layer 106 formed between the upper reflector and the active layer closest to the upper reflector among the plurality of active layers; and intermediate layers 105 each arranged between the plurality of active layers. The intermediate layer includes at least an Mg-doped layer 105a containing Mg and an In-containing nitride semiconductor layer 105b, in which the Mg-doped layer and the In-containing nitride semiconductor layer are stacked in this order from the substrate side.
摘要翻译：要解决的问题：提供一种氮化物半导体表面发射激光器，其可以抑制当中间层是Mg掺杂时发生的记忆效应，并且可以抑制发光效率的降低。解决方案：一种表面发射激光器，其中多个氮化物半导体层包括下反射器102，用于通过电流注入产生增益的多个有源层104和堆叠在基板101上的上反射器107包括形成在下反射器和最靠近下反射器的有源层之间的n型间隔层103 多个有源层中的反射器; 形成在所述多个有源层中的上反射体和最靠近上反射体的有源层之间的p型空间层106; 以及每个布置在多个有源层之间的中间层105。中间层至少包含含有Mg和含In的氮化物半导体层105b的Mg掺杂层105a，其中从衬底侧依次层叠Mg掺杂层和含In氮化物半导体层。

124. 发明专利

JP5522595B2 The surface-emitting laser element, a surface-emitting laser array, an optical scanning device and an image forming apparatus 有权
公开(公告)号：JP5522595B2
公开(公告)日：2014-06-18
申请号：JP2010150759
申请日：2010-07-01
申请人：株式会社リコー
发明人：俊一佐藤 , 和宏原坂 , 直人軸谷
IPC分类号： H01S5/183 , B41J2/44
CPC分类号： H01S5/18394 , B82Y20/00 , H01S5/0425 , H01S5/0655 , H01S5/18311 , H01S5/18327 , H01S5/1835 , H01S5/18358 , H01S5/18369 , H01S5/18391 , H01S5/3202 , H01S5/3434 , H01S5/423 , H01S2301/18

125. 发明专利

JP5515767B2 The method of manufacturing the surface-emitting laser element, a surface-emitting laser element, a surface-emitting laser array, an optical scanning device and an image forming apparatus 有权
公开(公告)号：JP5515767B2
公开(公告)日：2014-06-11
申请号：JP2010009820
申请日：2010-01-20
申请人：株式会社リコー
发明人：浩義庄子 , 俊一佐藤 , 彰浩伊藤 , 和宏原坂
IPC分类号： H01S5/183 , G03G15/04 , H04N1/113
CPC分类号： B32B37/14 , H01S5/0282 , H01S5/0425 , H01S5/18313 , H01S5/1835 , H01S5/18355 , H01S5/18358 , H01S5/18369 , H01S5/18377 , H01S5/18391 , H01S5/3202 , H01S5/423
摘要： A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

126. 发明专利

JP2014022672A Surface emitting semiconductor laser, surface emitting semiconductor laser device, light transmission device and information processing apparatus 有权
标题翻译：表面发射半导体激光器，表面发射半导体激光器件，光传输装置和信息处理装置
公开(公告)号：JP2014022672A
公开(公告)日：2014-02-03
申请号：JP2012162279
申请日：2012-07-23
申请人： Fuji Xerox Co Ltd , 富士ゼロックス株式会社
发明人： TAKEDA KAZUTAKA , KONDO TAKASHI
IPC分类号： H01S5/183
CPC分类号： H01S5/18313 , H01S5/02284 , H01S5/02288 , H01S5/0654 , H01S5/18358 , H01S5/2009 , H01S5/30 , H01S5/3432 , H01S2301/163 , H04B10/503
摘要： PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser which inhibits switching between longitudinal modes.SOLUTION: The surface emitting semiconductor laser comprises an n-type lower DBR (semiconductor multilayer reflector) 102, a resonator extension region 104, a carrier block layer 105, an active region 106, a current constriction layer 110 and an upper DBR 108 which are formed on a substrate. The resonator extension region 104 is formed from an n-type semiconductor material and includes a layer 120 which causes optical loss on a position of at least one wave node of a standing wave of a selected longitudinal mode Tm.
摘要翻译：要解决的问题：提供抑制纵向模式之间的切换的表面发射半导体激光器。解决方案：表面发射半导体激光器包括n型下DBR（半导体多层反射器）102，谐振器延伸区域104，载流子阻挡层 105，形成在基板上的有源区域106，电流收缩层110和上部DBR 108。谐振器延伸区域104由n型半导体材料形成，并且包括在所选择的纵向模式Tm的驻波的至少一个波形节点的位置上引起光学损耗的层120。

127. 发明专利

JP2013219323A Semiconductor laminate and surface emitting laser element 有权
标题翻译：半导体层压板和表面发射激光元件
公开(公告)号：JP2013219323A
公开(公告)日：2013-10-24
申请号：JP2013006259
申请日：2013-01-17
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： HARA TAKASHI
IPC分类号： H01S5/183
CPC分类号： H01S5/343 , H01S5/041 , H01S5/14 , H01S5/18358 , H01S5/18383 , H01S5/2009 , H01S5/3202 , H01S5/3406 , H01S5/3407 , H01S5/34313 , H01S5/34326 , H01S5/3434 , H01S5/34373
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laminate which has a high carrier confinement effect, an excellent heat radiation characteristic and a high gain.SOLUTION: A semiconductor laminate comprises: a semiconductor DBR formed on a substrate; and a resonator layer which is formed on the semiconductor DBR and includes wideband semiconductor layers and active layers which are alternately laminated one by one. The active layer includes an MQW layer and a two-layer spacer layers formed on both surfaces of the MQW layer. The MQW layer includes barrier layers and quantum well layers which are alternately laminated one by one. When assuming that n layers of wideband gap layers are formed, a band gap of the m-th wideband semiconductor layer from the substrate side is Eg, and a band gap of the (m-1)-th wideband semiconductor layer from the substrate side among the wideband semiconductor layers is Eg, and numerals n and m are integers of 2 or more and 1
摘要翻译：要解决的问题：提供具有高载流子限制效应，优异的散热特性和高增益的半导体层叠体。解决方案：半导体层叠体包括：形成在基板上的半导体DBR; 以及谐振器层，其形成在半导体DBR上，并且包括逐个交替层叠的宽带半导体层和有源层。有源层包括形成在MQW层的两个表面上的MQW层和两层隔离层。 MQW层包括交替叠层的势垒层和量子阱层。当假设形成n层宽带间隙层时，第m宽带半导体层与衬底侧的带隙为Eg，并且第（m-1）个宽带半导体层与衬底侧的带隙在宽带半导体层之中，Eg，数字n和m是2以上且1

128. 发明专利

JP5100434B2 The surface-emitting semiconductor laser and the surface-emitting semiconductor laser array 有权
公开(公告)号：JP5100434B2
公开(公告)日：2012-12-19
申请号：JP2008038315
申请日：2008-02-20
申请人：古河電気工業株式会社
发明人：則広岩井 , 啓史高木 , 英今井
IPC分类号： H01S5/183
CPC分类号： H01S5/18369 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/32366

130. 发明专利

JP4872987B2 The surface-emitting type semiconductor laser 有权
公开(公告)号：JP4872987B2
公开(公告)日：2012-02-08
申请号：JP2008215775
申请日：2008-08-25
申请人：ソニー株式会社
发明人：修前田 , 直輝城岸 , 勇志増井 , 智之大木 , 倫太郎幸田 , 孝博荒木田
IPC分类号： H01S5/183
CPC分类号： H01S5/18336 , H01S5/0655 , H01S5/18311 , H01S5/18316 , H01S5/18358 , H01S2301/166

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