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111. 发明专利

JPH07272659A ELECTRONIC BEAM EXCITING ION PLASMA GENERATOR 失效
公开(公告)号：JPH07272659A
公开(公告)日：1995-10-20
申请号：JP8265394
申请日：1994-03-30
申请人： RIKAGAKU KENKYUSHO , KAWASAKI HEAVY IND LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , YAMASHITA SEIJI , ONISHI MASARU , KAJIYAMA YOUSUKE
IPC分类号： C23F4/00 , H01J27/20 , H01J37/08 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To highly efficiently and uniformly generate ions and radicals in the ion generation area of an electronic beam exciting ion plasma generator. CONSTITUTION:Reaction gas supplying ports 11 and 12 are formed in the ion generation area of the casing 16 of an electronic beam exciting ion plasma generator 1' or immediately after the casing 16' of an acceleration electrode 8 in an circumferential direction at a specified pitch. The reaction gas 12 is supplied uniformly and as much as possible in the reaction chamber 10 of this ion generating area and ions and radicals excited by electronic beams are generated highly efficiently. Thus, exciting and supplying of a film to be formed and those to be etched are performed highly efficiently, densities of ions and radicals are set high and uniform, a target test piece 14 is finely processed by means of dry etching exactly according to a plan, product accuracy and productivity is improved.

112. 发明专利

JPH07272658A ELECTRONIC BEAM EXCITING PLASMA GENERATOR 失效
公开(公告)号：JPH07272658A
公开(公告)日：1995-10-20
申请号：JP8265294
申请日：1994-03-30
申请人： RIKAGAKU KENKYUSHO , KAWASAKI HEAVY IND LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , TOKAI MASAKUNI , YAMASHITA SEIJI , KAJIYAMA YOUSUKE
IPC分类号： C23F4/00 , H01J27/20 , H01J37/08 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To perform highly accurate dry etching processing wherein irrespective of the size of an etching groove an etching speed is not changed, a groove depth finely processed by means of dry etching is kept constant and a microloading effect is limited. CONSTITUTION:In an EBEP electronic beam exciting plasma generator 1' for performing dry etching processing by irradiating silicon wafer, etc., with plasma ions excited by an electronic beam, an alternating power source 5' is connected to an acceleration electrode 8 provided in an acceleration area 9 provided beforehand in a plasma generating area for accelerating electronic beams at a specified high speed and discharging these to a plasma generating area 10. Since the electronic beams are alternately accelerated, plasma exciting in a plasma generating area is also performed alternately and reaction products such as particles, gas and the like produced in the etching groove are surely discharged and separated therefrom at the time of plasma termination.

113. 发明专利

JPH07142020A ELECTRON BEAM EXCITING NEGATIVE ION SOURCE AND NEGATIVE ION GENERATING METHOD 失效
公开(公告)号：JPH07142020A
公开(公告)日：1995-06-02
申请号：JP29106193
申请日：1993-11-19
申请人： RIKAGAKU KENKYUSHO , KAWASAKI HEAVY IND LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , RIYUUJI MAKOTO , HASEGAWA TAKESHI , TOKAI MASAKUNI
IPC分类号： G21B1/11 , G21B1/00 , G21K1/00 , H01J27/14 , H01J27/20 , H01J37/08 , H05H7/08
摘要： PURPOSE:To provide an electron beam exciting negative ion source and a negative ion generating method by which a large quantity of negative ions can be generated efficiently and stably and continuous operation becomes possible at low cost. CONSTITUTION:Discharge is generated between a negative electrode 12 and a positive electrode 14 of an electron beam generating mechanism 10, and plasma is generated. An electron is extracted from this plasma, and is accelerate by accelerating voltage impressed on an accelerating electrode 15, and electron beam is generated. In a hydrogen plasma chamber 30, hydrogen gas is introduced from a hydrogen gas introducting port 31, and air is exhausted from an exhaust port 32, an the inside is set in the hydrogen gas atmosphere of prescribed pressure.

114. 发明专利

JPH0774135A DRY-CLEANING METHOD OF SUBSTRATE SURFACE 失效
公开(公告)号：JPH0774135A
公开(公告)日：1995-03-17
申请号：JP19553893
申请日：1993-07-13
申请人： RIKAGAKU KENKYUSHO
发明人： RIKU EIFUU , AOYANAGI KATSUNOBU
IPC分类号： C21D1/34 , C23G5/00 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To clean the surface of a substrate having adhering substances which are objects to be removed by a method wherein the short wavelength output pulse beam of a laser is applied to the substrate surface. CONSTITUTION:If the pulse beam of a KrF excimer laser outputted from a KrF excimer laser oscillator 10 is applied to the surface of a substrate A, adhering substances on the substrate A surface which are objects to be removed are decomposed by the integrated effect of laser photodecomposition by the KrF excimer laser, the vibration of the substrate surface caused by the laser abrasion or the impact of the laser pulse, etc., and removed from the substrate A surface and the substrate A surface is cleaned. With this constitution, the adhering substances on the substrate surface can be removed in the air. Further, the cleaning of the substrate surface which is free from exhaust of organic substances, noises and environmental pollution and excellent from the viewpoint of environmental protection can be achieved.

115. 发明专利

JPH0645256A METHOD FOR SUPPLYING GAS PULSE AND METHOD FORMING FOR FILM USING THE SAME 失效
公开(公告)号：JPH0645256A
公开(公告)日：1994-02-18
申请号：JP19384692
申请日：1992-07-21
申请人： RIKAGAKU KENKYUSHO , JAPAN RES DEV CORP
发明人： OZASA KAZUNARI , MEGURO TAKASHI , AOYANAGI KATSUNOBU
IPC分类号： G05D7/06 , H01L21/203 , H01L21/205
摘要： PURPOSE:To provide a method for supplying a gas pulse which can accurately supply even a very small amount of material gas in a pulse state and a method for forming a film to accurately control its thickness at an atomic layer level. CONSTITUTION:A switching valve 7a is opened in a state that switching valves 9a, 13a are closed, film forming material gas is introduced from a gas supply source 6a into a pressure control tank 8a, and the valve 7a is closed. In this case, a pressure control tank 8a is so controlled by a pressure gage 12a that gas pressure in the tank 8a becomes a predetermined pressure. If it exceeds the predetermined pressure, the valve 13a is opened to exhaust it, and the pressure in the tank 8a is set to the predetermined pressure. Then, from the state that the valves 7a, 9a, 13a are closed, the valve 9a is opened for a predetermined time. Thereafter, the gas in the tank 8a is supplied from a gas supply nozzle 4a toward a substrate 2 in the chamber 1 in a pulse state.

116. 发明专利

JPH05326188A PLASMA GENERATING DEVICE 失效
公开(公告)号：JPH05326188A
公开(公告)日：1993-12-10
申请号：JP19920891
申请日：1991-08-08
申请人： RIKAGAKU KENKYUSHO , JEOL LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , KUSAKABE KAZUTOSHI
IPC分类号： C23C14/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/00 , H05H1/24
摘要： PURPOSE:To suppress plasma vibration and take out a charged particle having less energy width. CONSTITUTION:An intermediate electrode 11 is insulated from a filament chamber F and a discharge chamber D, and connected to the plus side of a discharge power source 20 through a load resistor 21. A screen electrode 12 is insulated from the discharge chamber D and an accelerating chamber A, and connected to the plus side of the discharge power source 20. An accelerating electrode 13 is insulated from the accelerating chamber A and a chamber 1, and connected to the plus side of an accelerating power source 22. The plus side of the accelerating power source 22 is connected to an earth, and the minus side to the plus side of the discharge power source 20. A filament 10 is connected to an AC power source 25 through a filament transformer 24. A capacitor 31 is inserted between the screen electrode 12 and the accelerating electrode 13. When the capacitor 31 is inserted, plasma vibration is remarkably minimized.

117. 发明专利

JPH0375976B2 失效
公开(公告)号：JPH0375976B2
公开(公告)日：1991-12-04
申请号：JP28392486
申请日：1986-11-28
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01J27/20 , H01J37/08

118. 发明专利

JPH03110883A PRODUCTION OF QUANTUM THIN LINE DEVICE, AND QUANTUM THIN LINE DEVICE 失效
公开(公告)号：JPH03110883A
公开(公告)日：1991-05-10
申请号：JP24972489
申请日：1989-09-26
申请人： RIKAGAKU KENKYUSHO
发明人： SHIMOMURA SATORU , MIHARA MASARU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01L21/203 , H01L29/06 , H01S5/00 , H01S5/343
摘要： PURPOSE:To manufacture a wire accurately and easily with control accuracy at an atomic-layer order by a method wherein a molecular beam of a semiconductor raw material and a dopant raw material are applied obliquely, a crystal is grown on the surface and a stepped part of a substrate and a layer is formed. CONSTITUTION:An Al cell 11, a Ga cell 12 and an As cell 13 which contain crystal raw materials are placed inside a vacuum chamber 10; a substrate holder 14 which can be tilted at a prescribed angle theta to the cells is arranged; a substrate 15 whose error has been treated by an etching operation is attached to the holer. When shutters 17, 18 for Ga and As are opened simultaneously, GaAs can be grown; when shutters 17 to 19 for Ga, Al, As are opened simultaneously, Al0.3Ga0.7As can be grown. When the stepped substrate 15 is used, a crystal is grown to be thin at a flat part 21 and to be thick at a stepped part 22. Thereby, it is possible to form a high-accuracy and high-quality wire on the substrate at a quantum order.

119. 发明专利

JPH02256284A RECOMBINATION LASER 失效
公开(公告)号：JPH02256284A
公开(公告)日：1990-10-17
申请号：JP7751989
申请日：1989-03-29
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , ANDO KOZO , AOYANAGI KATSUNOBU
IPC分类号： H01S3/094 , H01S4/00
摘要： PURPOSE:To improve efficiency of laser oscillation while obtaining a small-sized system of a soft X-ray laser by specifying pulse waveforms of laser light to be converged on the solid target surface. CONSTITUTION:Laser light 12 for excitation oscillated from a laser device 11 is reflected by a semitransparent mirror 13 to be introduced into a recombination laser oscillation device 14 for being converged as a line focus by a cylindrical lens 16 on the surface of a solid target 17. Then, pulse waveform of the laser light 12 to be converged is so designed as to be a waveform, on which strong modulation is imposed by a high-frequency component, or a waveform consisting of a plurality of pulse lines. As a result, multivalent ions can be efficiently generated. Thereby, efficiency of gain generation is improved so that a small-sized soft X-ray laser device can be obtained.

120. 发明专利

JPH02229425A DOPING OF III-V COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH02229425A
公开(公告)日：1990-09-12
申请号：JP4970189
申请日：1989-03-01
申请人： RIKAGAKU KENKYUSHO
发明人： IIMURA YASUFUMI , DEN SHOJI , NAGATA AKIRA , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01L21/205 , H01L21/203
摘要： PURPOSE:To control an amount of impurities in a crystal highly accurately and simply by a method wherein an energy and a density, i.e., a filament current and a grid voltage, of an electron beam which is applied to a Group III organic metal compound gas as a dopant gas containing dopant atoms are changed and a raw-material gas is operated. CONSTITUTION:When the Group III organic compound gas is passed inside a grid 18, it collides with thermoelectrons; its one part is decomposed and ionized and reaches a substrate 26. On the other hand, a Group V compound gas is pyrolyzed by using a heater 30; Group V atoms reach the substrate 26. A sufficient surface mobility is given to Ga and As which have reached the substrate 26; a growth film is heated so as to be transformed into a single crystal. In addition, an extraction electrode 32 and a quadruple pole 34 are installed between the grid 18 and the substrate 26. The Group V organic compound gas is decomposed and ionized inside the grid 18; after that, only ions containing carbon atoms are introduced into the quadruple pole 34 by using the extraction electrode 32; only desired ions are incident on the growth substrate 26. As a result, impurities can be controlled with a higher accuracy.

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