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    • 111. 发明专利
    • PHOTOELECTRIC TRANSDUCER
    • JPS56155577A
    • 1981-12-01
    • JP5869280
    • 1980-05-06
    • RICOH KK
    • SAKURAI KOUICHISEGAWA HIDEOMORI KOUJIITAGAKI MASAKUNIISHIWATARI TATSUMI
    • H01L27/146
    • PURPOSE:To prevent the lowering of photosensitivity of a photoelectric transducer by coating the exposed portion of the photoelectric transducer layer with an insulating layer for protection. CONSTITUTION:A transparent conductibg film such as In2O3 2 or the like is piled on silica glass 1 or the like and etched into a desired shape. By using masks, CdS4 or the like having a relatively large band gap and CdTe 5 or the like having a relatively small band gap are laminated thereon, and a heat treatment is applied thereto in O2 at each lamination. Then, by using a mask, amorphous si 6 is laminated thereon in order to moreover improve the photoelectric characteristics. Then, one end of the photoelectric transducer layer 3 is coated with SiO2 7 or the like as a protective film, and an electrode 8 of Au or the like is provided. By said constitution, the deterioration of the photoelectric transducer layer resulting from an oxidative reaction, moisture, heat and the like can be prevented by the formation of the protecting film, so that the photoelectric characteristics are not damaged. In addition, because the photoelectric transducer layer 3 is not directly etched, there is no adverse effect due to an etching fluid.
    • 115. 发明专利
    • ONEEDIMENSIONAL IMAGE SENSOR
    • JPS56117473A
    • 1981-09-14
    • JP1987680
    • 1980-02-20
    • RICOH KK
    • SEGAWA HIDEOSAKURAI KOUICHIMORI KOUJIITAGAKI MASAKUNIISHIWATARI TATSUMI
    • H04N1/028G06T1/00H01L27/146H04N1/03
    • PURPOSE:To obtain a small-sized and high-reliability one-dimensional image sensor easily producible, by dividing the paired electrodes opposite to the common electrodes via a photoconductive material layer into groups and then providing the IC chip connected to the paired electrodes of the adjacent groups at the opposite side to each other. CONSTITUTION:The common electrode 4, the photoconductive material layer 5 and individual paired electrodes 6 are formed in stripes on the transparent electrode 1a. The electrodes 6 are divided into the groups G1-G3... formed with the paired electrodes adjacent to each other. Then the IC chip 11 to be connected to the paired electrodes belonging to the groups adjacent to each other is provided on the substrate 1b and 1c which are at the opposite side to each other to the stripe 3, and each paired electrodes 6 is extended toward the IC chip 11 to be connected each. In such constitution, the overall structure is made small and at the same time the space among the extended parts 6a of the electrodes 6 is secured large. Thus the reliability is increased for a connection between a photodiode element and an IC.
    • 117. 发明专利
    • MANUFACTURE OF PHOTOELECTRIC TRANSDUCER ELEMENT
    • JPS5690571A
    • 1981-07-22
    • JP16679679
    • 1979-12-24
    • RICOH KK
    • SEGAWA HIDEOSAKURAI KOUICHIMORI KOUJIITAGAKI MASAKUNI
    • H01L27/146H01L31/0264H01L31/09H01L31/18
    • PURPOSE:To provide a photoelectric transducer element having a superior characteristic and of which length may be extended by a method wherein CdS, CdTe, As2Se3 are piled up on a transparent conductive film on a light permeable substance, a desired heat treatment is applied to the substance in the air and nonactive gas. CONSTITUTION:Transparent conductive film 2 made of SnO2 or In2O3 etc. is vapourized on the base plate 1 made of soda glass etc., then the base plate is kept at about 350 deg.C, CdS3 is vapourized by about 3mu, heat treated at about 600 deg.C in an atmosphere containing O2, then the base plate is kept at about 350 deg.C, and CdTe4 is vapourized by about 2mu. Then, they are heat treated at 100 deg.C-700 deg.C in the mixture gas of Ar and O2, and processed at 500 deg.C in Ar for about 20min. As a result, hetero junction at a boundary between CdS and CdTe is enforced to produce such a photoelectric transducer element as having a low dark current under a reverse biasing and a fast photoresponsive speed. Then, the base plate is heated up to about 200 deg.C, As2Se3 5 is vapourized by about 0.2mum and Au electrode 6 is attached. In this way, a long photoelectric element may easily be produced.
    • 120. 发明专利
    • OPTICAL FIBER DEVICE
    • JPS55155303A
    • 1980-12-03
    • JP6370879
    • 1979-05-23
    • RICOH KK
    • SEGAWA HIDEOKOYAMA JIROUNISHIHARA HIROSHI
    • G02B6/00G02B6/28G02B6/34
    • PURPOSE:To eliminate the need for separately connecting the elements having the function of optical filters and optical fibers by packing photosensitive material in the contact portions of the optical fibers and forming a grating directly in the layer by making use of its photosensitive characteristics. CONSTITUTION:At least two optical fibers 8, 9 which are cut and ground of clad parts 6 by a suitable length to exposre core parts 7 are coupled at a coupling length L. A layer 10 formed with optical grating is interposed in the contact portion of the optical fibers 8, 9. In forming the grating in the layer 10, the laser beams 11, 12 which are sensitive to photosensitive material are entered to the layer 10 at 2theta0 in the angle assumed by both beams to sensitize the layer 10. At this time, the bright and dark interference fringe is produced along the lengtwise direction of the optical fibers 8, 9, as a result of which only the bright fringe portions are sensitized and the optical grating is thus made. In this way, the need for separate connection of the elements having the function of optical filters and optical fibers may be eliminated.