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    • 2. 发明专利
    • METALLIC THIN-FILM ELECTRODE AND ITS MANUFACTURE
    • JPS58145151A
    • 1983-08-29
    • JP2717382
    • 1982-02-22
    • RICOH KK
    • YOSHIDA TAIZOUMORI KOUJIITAGAKI MASAKUNIISHIWATARI TATSUMI
    • H01C17/06H01L21/70H01L27/01
    • PURPOSE:To simplify the manufacturing process, and to reduce manufacturing cost largely by forming a gold plating layer to one part on a metallic thin-film as a bonding section. CONSTITUTION:A NiCr layer 2 is laminated onto an insulating substrate 1 made of silicon oxide (SiO2) or ceramics or the like through a vacuum deposition method or a sputtering method. The film thickness of NiCr differs according to the size of the electrode, but it is preferable that it is kept within a range of several hundreds or several thousands Angstrom . The NiCr film is etched to a desired shape through a photolithography method to form an NiCr layer 2. Sections except a section to be plated with Au is coated with a photo-resist (a photosensitive acid-resistant film), and the film surface of the NiCr layer of the section to be plated with Au is treated with an acidic cleaner such as Oxytron No.15 (a merchandise name). The film surface is washed away by wafer, treated with dilute hydrochloric acid, etc., and washed lastly by water once more, and the surface treating of the NiCr layer is completed. The surface is plated with Au through a normal method in a normal bath, and the desired Au plating layer 4 is formed.
    • 3. 发明专利
    • PHOTOSENSOR
    • JPS5897860A
    • 1983-06-10
    • JP19713281
    • 1981-12-08
    • RICOH KK
    • ISHIWATARI TATSUMI
    • H04N5/225H01L21/60H01L21/603H01L27/146H04N1/028H04N5/335
    • PURPOSE:To reduce cost, and to simplify the process by a method wherein a plurality of light-receiving elements, to which an optical picture information is projected, are juxtaposed and arranged onto a substrate, electrodes connected to each of the elements are disposed, one part of the electrodes is protected by an insulating film, a flexible printed board is thermocompression-bonded, and wires are connected onto the substrate in matrix shape regarding the mutual connection of the forming elements of the photosensor. CONSTITUTION:The common electrodes 2 partitioned into a plurality of blocks are shaped onto the transparent substrate 1 and one ends of a plurality of diodes 3 are connected to the electrodes 2, and one ends of light-receiveing sections 5 are connected at the other ends of each diode 3 through opposite electrodes 4. One ends of separate electrdes 6 are severally connected at the other ends of respective light-receiving section 5, and the other ends of the electrodes 6 are separated into each bus pattern 8 formed to the lower surface of the flexible printed board 7. Voltage is applied among the patterns 8 and the electrodes 2, and the diodes 3 and the light-receiving sections 5 are driven. The opposite electrodes 4 and the separate electrodes 6 shape conductive paths for driving the diodes and the light-receiving sections.
    • 4. 发明专利
    • PHOTODIODE
    • JPS571271A
    • 1982-01-06
    • JP7536780
    • 1980-06-04
    • RICOH KK
    • SAKURAI KOUICHIISHIWATARI TATSUMI
    • H01L31/10H01L31/0272
    • PURPOSE:To obtain a device which is characterized by high performance, a large area, and long dimensions, by layering an Se-As compound layer wherein 50 atomic % or more Se in included and a layer wherein Se content is further increased, and providing opposing electrodes. CONSTITUTION:SnO2 2 is evaporated on quartz glass 1. The mixture of Se or 50 atomic % or more and As of 50 atomic % or less is heat-treated in a vacuum and then quickly cooled. Thus, the Se-As compound is prepared and evaporated 3 to about 4,000Angstrom on an electrode 2 in the vacuum. Then the compound having more Se or pure Se is further evaporated to about 1.000Angstrom , and a film 4 is layered. If the total thickness of the films 3 and 4 is 2,000Angstrom or less, pin holes will be formed. An Au electrode 5 is provided on the film 4. If Te, P, and the like are added to the Se- As compound as impurities, the performance can be enhanced in response to the purposes. In this constitution, the device characterized by the small leakage currents and the quick response speed can be obtained, and the long dimensions and the large area can be realized.
    • 7. 发明专利
    • PICTURE READING DEVICE
    • JPS58138167A
    • 1983-08-16
    • JP2087782
    • 1982-02-12
    • RICOH KK
    • ISHIWATARI TATSUMIMORI KOUJIITAGAKI MASAKUNIYOSHIDA TAIZOU
    • H04N1/028G06T1/00H01L27/146H04N1/03
    • PURPOSE:To reduce the wiring capacity between the photoreceptor and the scanning circuit, to reduce the time required for assembling (connecting) the titled device, and to improve the yield, by directly connecting a glass substrate or a ceramic substrate equipped with metallic electrodes which are connected to the photoreceptor with a printed circuit board having the scanning circuit to be used for scanning the photoreceptor by means of a connector. CONSTITUTION:On a glass substrate or a ceramic substrate 3, a film of a photoconductive material, such as CdS, CdS/CdSe, amorphous Si, etc., is formed by the sputtering metod, vacuum deposition method, plasma CVD method, etc., and a photoreceptor 1 is formed by the photoetching method. Then films of NiCr and Au are successively formed by the vacuum evaporation method, and a common electrode 2a and individual electrodes 2b are formed by the photoetching method. Moreover, the connection between a connector 5 and a printed circuit board 4 for the scanning circuit is achieved in such a way that a connector terminal 6 installed at one end of the connector 5 is directly soldered on the pattern on the printed circuit board.
    • 9. 发明专利
    • PHOTOELECTRIC CONVERSION DEVICE
    • JPS58122775A
    • 1983-07-21
    • JP343082
    • 1982-01-14
    • RICOH KK
    • YOSHIDA TAIZOUISHIWATARI TATSUMI
    • H04N1/028H01L27/146H01L31/052
    • PURPOSE:To rapidly enhance the efficiency of lighting the signal light by a method wherein a light reflection film is provided on the lower surface of a light transmitting substrate, then a photoelectric conversion layer having electrode at both ends is provided on the upper surface of the surface, or a light reflection film and a light transmitting insulation layer are laminated on the light transmitting substrate, and thereon a photoelectric conversion layer having electrodes at both ends is formed. CONSTITUTION:On the lower surface of the light transmitting substrate 1a constituted of soda glass, quartz glass, etc., the light reflection film 4 of Cr, Ni, Al, etc. is adhered, and, on the upper surface of the substrate 1a, the photoelectric conversion layer 3 constituted of the single layer body or lamination body of CdS, CdSe, ZnS, ZnSe, etc. is formed. Thereafter, while being extended on the upper surface of the substrate 1a, electrodes 2 of Cr, Ni, Au, Al, etc. are mounted at the both end thereof. Or, using the same material, the light reflection film 4 and the light transmitting insulation layer 5 of SiO2, borosilicated glass, etc. are provided on the upper surface of the substrate 1, and thus thereon the photoelectric conversion layer 3 and the electrodes 2 are formed. In this manner, the light transmitted through the photoelectric conversion layer is reflected on the light reflection film, and again returned to the photoelectric conversion layer.
    • 10. 发明专利
    • IMAGE SENSOR
    • JPS5715480A
    • 1982-01-26
    • JP9046980
    • 1980-07-02
    • RICOH KK
    • ISHIWATARI TATSUMISEGAWA HIDEO
    • H04N1/028H01L27/146
    • PURPOSE:To inexpensively obtain a one-dimensional image sensor adapted to scan the image of an original at an equal magnification or at a contraction rate approximating thereto by forming a photodiode array and a blocking diode array on the common substrate. CONSTITUTION:A central plate 1 is made of transparent material e.g., glass or the like, side plates 1b, 1c disposed at both sides of the plate 1a are disposed at the intermediate part in a widthwise direction on the back surface of a strip substrate 1 made of glass epoxy, and a reinforcing plate 2 having a slit-shaped optical window 2 extending vertically is secured thereto. Then, a diode array 3 formed of photodiodes P2-P4 of rectilinear state is formed along the window 2a directly above the window 2a, and a diode array 4 formed of blocking diodes B2-B4 is provided at each of both sides of the array parallel to the respective diodes P2-P4. Thereafter, electrodes P1, P5 and B1, B5 are respectively mounted on and under the arrays 3 and 4, and are connected to the corresponding electrodes P1 and B1.