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101. 发明专利

JP4894153B2 Precursor composition and preparation method thereof of the porous membrane, a porous membrane and a manufacturing method thereof, and a semiconductor device 有权
公开(公告)号：JP4894153B2
公开(公告)日：2012-03-14
申请号：JP2005084206
申请日：2005-03-23
申请人：三井化学株式会社 , 株式会社アルバック , 独立行政法人産業技術総合研究所
发明人：高博中山 , 博文田中 , 藤井　　宣年 , 敏彦金山 , 一夫高村
IPC分类号： C09D7/12 , C08G77/04 , C08L83/04 , C09D1/00 , C09D183/00 , H01L21/316
CPC分类号： C09D183/04 , C08K3/02 , C09D7/61 , H01L21/02126 , H01L21/02142 , H01L21/02203 , H01L21/02282 , H01L21/02337 , H01L21/31695 , Y10T428/249953
摘要： A precursor composition for porous film comprising at least one member selected from the group consisting of compounds represented by the following general formulas: Si(OR 1 ) 4 and R a (Si)(OR 2 ) 4-a (in the formulas, R 1 represents a monovalent organic group; R represents a hydrogen atom, a fluorine atom or a monovalent organic group; R 2 represents a monovalent organic group; a is an integer ranging from 1 to 3, provided that R, R 1 and R 2 may be the same or different); a heat decomposable organic compound capable of being thermally decomposed at a temperature of not less than 250°C; and at least one element selected from the group consisting of elements each having a catalytic action, and organic solvent. A hydrophobic compound is subjected to a gas-phase polymerization reaction in the presence of a solution of this precursor composition to thus form a hydrophobic porous film having a low dielectric constant, a low refractive index and high mechanical strength. A semiconductor device prepared using the porous film.

102. 发明专利

JP2012504867A A method of forming a silicon nitride film or a silicon carbide-based film 审中-公开
公开(公告)号：JP2012504867A
公开(公告)日：2012-02-23
申请号：JP2011530086
申请日：2009-08-26
申请人：アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人：シュリニヴァス，ディ．ネマニ， , アブヒジット，バスマリック，
IPC分类号： H01L21/318 , C23C16/42 , C23C16/50 , H01L21/314
CPC分类号： H01L21/3148 , C23C16/325 , C23C16/347 , C23C16/401 , C23C16/505 , H01L21/02126 , H01L21/0214 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02216 , H01L21/02219 , H01L21/02274 , H01L21/31633 , H01L21/3185
摘要：窒化ケイ素系誘電体層を堆積する方法が提供される。該方法は、ケイ素前駆体及びラジカル窒素前駆体を堆積チャンバーに導入することを含む。前記ケイ素前駆体は、Ｎ−Ｓｉ−Ｈ結合、Ｎ−Ｓｉ−Ｓｉ結合及び／又はＳｉ−Ｓｉ−Ｈ結合を有する。前記ラジカル窒素前駆体は、内包酸素を実質的に含まない。前記ラジカル窒素前駆体は、堆積チャンバーの外で発生させる。前記ケイ素前駆体及び前記ラジカル窒素前駆体は、相互作用して前記窒化ケイ素系誘電体層を形成する。

103. 发明专利

JP2012023245A Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012023245A
公开(公告)日：2012-02-02
申请号：JP2010160825
申请日：2010-07-15
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： OSHIDA DAISUKE , KUME IPPEI , UEKI MAKOTO , IGUCHI MANABU , INOUE HISAYA , MARUYAMA TAKUYA , TAIJI TOSHIJI , KATSUYAMA YOICHI
IPC分类号： H01L23/522 , H01L21/316 , H01L21/768
CPC分类号： H01L21/76883 , H01L21/02126 , H01L21/02216 , H01L21/3105 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76865 , H01L21/76873 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To suppress an increase of effective capacity between wiring lines.SOLUTION: A semiconductor device 100 comprises: an insulating film 11 made from a six-membered cyclic siloxane; a wiring groove 12 formed in the insulating film 11; and a wiring line 10 composed of the wiring groove 12 embedded with a metal film (wiring metal) 15. In the semiconductor device 100, a modified layer 13 with a larger number of carbon or/and nitrogen atoms per unit volume than in the inside of the insulating film 11 is formed on the bottom surface of the wiring groove 12.
摘要翻译：要解决的问题：抑制布线之间的有效容量的增加。解决方案：半导体器件100包括：由六元环状硅氧烷制成的绝缘膜11; 形成在绝缘膜11中的布线槽12; 以及由嵌入金属膜（布线金属）15的布线槽12构成的布线10.在半导体装置100中，每单位体积的碳/氮原子数多于内部的改性层13 绝缘膜11形成在布线槽12的底面上。版权所有（C）2012，JPO＆INPIT

104. 发明专利

JP2012009899A Active chemical method for enhancing material characteristic of dielectric film 有权
标题翻译：用于增强电介质膜材料特性的活性化学方法
公开(公告)号：JP2012009899A
公开(公告)日：2012-01-12
申请号：JP2011213741
申请日：2011-09-29
申请人： Air Products & Chemicals Inc , エアプロダクツアンドケミカルズインコーポレイテッドAir Products And Chemicals Incorporated
发明人： WEIGEL SCOTT JEFFREY , MARK LEONARD O'NEILL , VRTIS RAYMOND NICHOLAS , DINO SINATORE
IPC分类号： H01L21/316 , H01L21/312 , H01L21/768 , H01L23/522
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274
摘要： PROBLEM TO BE SOLVED: To repair a dielectric constant of a layer of silicon-containing dielectric material.SOLUTION: The present invention relates to a method for repairing the dielectric constant of the layer of silicon-containing dielectric material having a first dielectric constant and at least one top surface, and the first dielectric constant of the silicon-containing dielectric material has increased up to a second dielectric constant. The method includes a step of bringing at least the one surface of the silicon-containing dielectric material and a silicon-containing fluid into contact with each other, and a step of exposing the at least one top surface of the layer of silicon-containing dielectric material to an energy source selected from the group comprising ultraviolet irradiation, heat, and an electron beam, the layer of silicon-containing dielectric material having a third dielectric constant smaller than the second dielectric constant after the layer of silicon-containing dielectric material is exposed to the energy source.
摘要翻译：要解决的问题：修复含硅电介质材料层的介电常数。解决方案：本发明涉及一种用于修复具有第一介电常数和至少一个顶表面的含硅介电材料层的介电常数的方法，并且所述含硅电介质材料的第一介电常数已增加到第二介电常数。该方法包括使至少含硅介电材料的一个表面和含硅流体彼此接触的步骤，以及将含硅电介质层的至少一个顶表面曝光的步骤材料选自包括紫外线照射，热和电子束的组的能量源，在含硅介电材料层暴露后，具有小于第二介电常数的第三介电常数的含硅介电材料层到能源。版权所有（C）2012，JPO＆INPIT

105. 发明专利

JP2012004401A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2012004401A
公开(公告)日：2012-01-05
申请号：JP2010139018
申请日：2010-06-18
申请人： Fujitsu Semiconductor Ltd , 富士通セミコンダクター株式会社
发明人： OKURA YOSHIYUKI , MORI TOSHIKI
IPC分类号： H01L21/316 , C23C16/42 , H01L21/205 , H01L21/768 , H01L23/522
CPC分类号： H01L21/02126 , H01L21/02271 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/76808 , H01L21/76825 , H01L21/76826
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that has excellent electric characteristics while preventing reliability from being lost.SOLUTION: A method of manufacturing the semiconductor device includes the processes of: forming an insulation film 42 including silicon, oxygen and carbon by a chemical vapor-phase deposition method on a semiconductor substrate 10; carrying out ultraviolet curing on the insulation film while heating it at a temperature equal to or lower than 350°C after the process of forming the insulation film; and performing helium plasma processing on the insulation film after the process of the ultraviolet curing.
摘要翻译：要解决的问题：提供具有优异的电特性同时防止可靠性丧失的半导体器件。解决方案：制造半导体器件的方法包括以下处理：在半导体衬底10上通过化学气相沉积法形成包括硅，氧和碳的绝缘膜42; 在形成绝缘膜的过程之后，在绝缘膜上进行紫外线固化，同时在等于或低于350℃的温度下加热; 并且在紫外线固化过程之后对绝缘膜进行氦等离子体处理。版权所有（C）2012，JPO＆INPIT

106. 发明专利

JP4837370B2 Film formation method 有权
公开(公告)号：JP4837370B2
公开(公告)日：2011-12-14
申请号：JP2005350765
申请日：2005-12-05
申请人：東京エレクトロン株式会社
发明人：真司井出 , 康弘大島 , 勇作柏木
IPC分类号： H01L21/316 , C23C16/42 , H01L21/768 , H01L23/522
CPC分类号： H01L23/5329 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/31633 , H01L21/7682 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L23/53223 , H01L23/53295 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.

107. 发明专利

JP2011238894A Method of manufacturing semiconductor device, substrate processing method, and substrate processing apparatus 有权
标题翻译：制造半导体器件的方法，衬底处理方法和衬底处理装置
公开(公告)号：JP2011238894A
公开(公告)日：2011-11-24
申请号：JP2010280421
申请日：2010-12-16
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROSE YOSHIRO , TAKAZAWA HIROMASA , KAMAKURA TSUKASA , NAKAMURA YOSHINOBU , SASAJIMA RYOTA
IPC分类号： H01L21/318 , C23C16/30 , C23C16/455 , H01L21/31 , H01L21/316
CPC分类号： H01L21/67069 , C23C16/30 , C23C16/45531 , C23C16/45546 , H01L21/02104 , H01L21/02126 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0223 , H01L21/02247 , H01L21/0228 , H01L21/67011 , H01L21/67017
摘要： PROBLEM TO BE SOLVED: To form an insulator film having such characteristics as low dielectric constant, low etching rate, and high insulation property.SOLUTION: A set of steps includes a step in which the gas containing a predetermined element is supplied under such condition as CVD reaction is caused, into a process chamber which houses a substrate, so that a layer containing predetermined element is formed on the substrate, a step in which the gas containing carbon is supplied into the process chamber so that a layer containing carbon is formed on the layer containing predetermined element, to form a layer containing predetermined element and carbon, and a step in which the gas containing nitrogen is supplied into the process chamber so that the layer containing predetermined element and carbon is nitrided to form a carbonitride layer. Another step forms a carbonitride layer of predetermined thickness by performing the set by predetermined frequency. One cycle includes that step and a step in which the gas containing oxygen is supplied into the process chamber so that the carbonitride layer having the predetermined thickness is oxidized to form a carbonitride oxide film. The cycle is performed by predetermined frequency to form a carbonitride oxide film having a predetermined film thickness on the substrate.
摘要翻译：要解决的问题：形成具有低介电常数，低蚀刻速率和高绝缘性等特性的绝缘膜。解决方案：一组步骤包括一个步骤，其中在诸如CVD反应的条件下将含有预定元素的气体供应到容纳衬底的处理室中，从而在包含预定元素的层上形成含有预定元素的层基板，将含有碳的气体供给到处理室中使得含有碳的层的层形成在包含预定元素的层上以形成含有预定元素和碳的层的步骤，以及其中含有将氮气供应到处理室中，使含有预定元素和碳的层被氮化以形成碳氮化物层。通过以预定频率执行该组，另一步形成预定厚度的碳氮化物层。一个循环包括该步骤和将含有氧气的气体供应到处理室中以使具有预定厚度的碳氮化物层被氧化以形成碳氮化物膜的步骤。循环以预定的频率进行，以在衬底上形成具有预定膜厚度的碳氮化物膜。版权所有（C）2012，JPO＆INPIT

108. 发明专利

JP2011166106A Semiconductor device manufacturing method, and semiconductor device 审中-公开
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：JP2011166106A
公开(公告)日：2011-08-25
申请号：JP2010129633
申请日：2010-06-07
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： YAMAMOTO HIROCHIKA , HAYASHI YOSHIHIRO , KAWAHARA JUN , USAMI TATSUYA , ONE KOICHI
IPC分类号： H01L21/312 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76832 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02274 , H01L21/76826 , H01L21/76829 , H01L21/76883
摘要： PROBLEM TO BE SOLVED: To form an insulating film with lower specific permittivity without degrading reliability in an element. SOLUTION: The manufacturing method of the semiconductor device includes a step of forming a first insulating film 102 by plasma polymerizing cyclic siloxane to a basic film 101; and for forming a second insulating film 103 by plasma polymerizing the cyclic siloxane to the first insulating film 102, continuously after the step of forming the first insulating film 102. The deposition speed of the first insulating film 102 is lower than that of the second insulating film 103. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：形成具有较低比介电常数的绝缘膜，而不降低元件中的可靠性。解决方案：半导体器件的制造方法包括通过将环状硅氧烷等离子体聚合成碱性膜101而形成第一绝缘膜102的工序; 并且通过在形成第一绝缘膜102的步骤之后连续地将环状硅氧烷等离子体聚合到第一绝缘膜102来形成第二绝缘膜103.第一绝缘膜102的沉积速度低于第二绝缘膜102的沉积速度电影103.版权所有（C）2011，JPO＆INPIT

110. 发明专利

JP4701017B2 A method of manufacturing a semiconductor device and a semiconductor device 有权
公开(公告)号：JP4701017B2
公开(公告)日：2011-06-15
申请号：JP2005180604
申请日：2005-06-21
申请人：パナソニック株式会社
发明人：秀夫中川 , 信雄青井
IPC分类号： H01L21/768 , H01L21/312 , H01L21/314 , H01L23/522
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L21/3185 , H01L21/76832 , H01L21/76849 , H01L21/76867 , H01L21/76886

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