专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2015002312A 半導体装置の製造方法、基板処理装置およびプログラム有权
标题翻译：制造半导体器件，基板处理器件和程序的方法
公开(公告)号：JP2015002312A
公开(公告)日：2015-01-05
申请号：JP2013127264
申请日：2013-06-18
申请人：株式会社日立国際電気 , Hitachi Kokusai Electric Inc
发明人： SANO ATSUSHI , HIROSE YOSHIRO , KAMAKURA TSUKASA
IPC分类号： H01L21/314 , C23C16/455 , H01L21/31
CPC分类号： H01L21/0228 , C23C16/342 , C23C16/36 , C23C16/45531 , C23C16/45546 , H01L21/02112 , H01L21/02274
摘要：【課題】硼炭窒化膜や硼窒化膜を成膜する際の生産性を向上させ、膜中の炭素濃度の制御性を高める。【解決手段】基板に対して硼素とハロゲン元素とを含む原料ガスを供給する工程と、基板に対して炭素、窒素および水素の3元素で構成される反応ガスを供給する工程と、を含むサイクルを所定回数行うことで、基板上に、硼素、炭素および窒素を含む膜、または、硼素および窒素を含む膜を形成する工程を有する。【選択図】図4
摘要翻译：要解决的问题：通过在形成碳氮化硼或氮化硼膜时提高生产率来提高碳氮化硼膜或氮化硼膜中的碳浓度的可控性。解决方案：一种制造半导体器件的方法包括：通过进行包括将含有硼和卤素元素的原料气体供给到基板的工序的循环，在基板上含有硼，碳和氮的膜或含有硼和氮的膜，以及供给由将碳，氮和氢的三个元素提供给基板规定次数。

2. 发明专利

JP2014185363A Substrate treatment apparatus, treatment container, and method for manufacturing semiconductor device 审中-公开
标题翻译：基板处理设备，处理容器和制造半导体器件的方法
公开(公告)号：JP2014185363A
公开(公告)日：2014-10-02
申请号：JP2013060341
申请日：2013-03-22
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KAMAKURA TSUKASA , HIROSE YOSHIRO
IPC分类号： C23C16/46 , H01L21/205
CPC分类号： F26B3/283 , C23C16/481 , H01L21/67115
摘要： PROBLEM TO BE SOLVED: To improve quality of film forming processing by stabilizing a substrate heating condition at the time of forming a thin film on a substrate heated by a heating part provided outside of a treatment container.SOLUTION: A substrate treatment apparatus includes: a treatment container in which treatment of a substrate is performed; a heating part which is provided outside the treatment container and heats the substrate inside the treatment container by irradiation of radiation heat; and a raw material gas supply system which supplies a raw material gas into the treatment container. At least a part of the outer wall of the treatment container is formed with a heat absorbing layer saturating absorption of the radiation heat from the heating part.
摘要翻译：要解决的问题：通过在由设置在处理容器外部的加热部分加热的基板上形成薄膜来稳定基板加热条件来提高成膜处理的质量。解决方案：基板处理装置包括：进行处理基板的处理容器; 加热部，其设置在处理容器的外侧，通过辐射热照射加热处理容器内的基板; 以及向处理容器供给原料气体的原料气体供给系统。处理容器的外壁的至少一部分形成有对来自加热部的辐射热的吸收饱和的吸热层。

3. 发明专利

JP2012160704A Semiconductor device manufacturing method, substrate processing method and substrate processing apparatus 有权
标题翻译：半导体器件制造方法，基板处理方法和基板处理装置
公开(公告)号：JP2012160704A
公开(公告)日：2012-08-23
申请号：JP2011268002
申请日：2011-12-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROSE YOSHIRO , TAKAZAWA HIROMASA , KAMAKURA TSUKASA , NAKAMURA YOSHINOBU , SASAJIMA RYOTA
IPC分类号： H01L21/318 , C23C16/30 , C23C16/455 , H01L21/31 , H01L21/316
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/36 , C23C16/40 , C23C16/401 , C23C16/45523 , C23C16/45529 , C23C16/45531 , C23C16/45546 , H01L21/02112 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/02211
摘要： PROBLEM TO BE SOLVED: To form an insulation film having properties of a low dielectric constant, a low etching rate and high insulating performance.SOLUTION: An oxy carbonitride film of a predetermined film thickness in which carbonitride layers and oxide layers are alternately laminated one on top of another over a substrate, is formed by alternately and repeatedly performing the steps of: forming a carbonitride layer of a predetermined thickness containing a predetermined chemical element on a substrate by supplying a predetermined element containing gas, a carbon containing gas and a nitride containing gas to a heated substrate in a processing chamber; and forming an oxide layer of a predetermined thickness containing a predetermined chemical element on the substrate by supplying a predetermined element containing gas and an oxygen containing gas to the heated substrate in the processing chamber.
摘要翻译：要解决的问题：形成具有低介电常数，低蚀刻速率和高绝缘性能的绝缘膜。解决方案：通过交替地和重复地执行以下步骤，形成具有预定膜厚度的氧化碳氮化物膜，其中碳氮化物层和氧化物层在衬底上交替层叠在一起，并且重复地执行以下步骤：形成碳氮化物层通过在处理室中向加热的基板供应含有气体的预定元素，含碳气体和含氮化物的气体，在基板上含有预定的化学元素的预定厚度; 以及通过向处理室中的加热衬底供应含有气体和含氧气体的预定元素，在衬底上形成含有预定化学元素的预定厚度的氧化物层。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2008218877A Substrate treatment device and method of manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及制造半导体器件的方法
公开(公告)号：JP2008218877A
公开(公告)日：2008-09-18
申请号：JP2007057109
申请日：2007-03-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KAMAKURA TSUKASA , AKAE HISANORI , YONEBAYASHI MASAHIRO , HIROSE YOSHIRO
IPC分类号： H01L21/205 , C23C16/44 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device which has a mechanism to generate remote plasma and can perform the uniform gas-cleaning of a support board to support the substrate.
SOLUTION: The substrate treatment device includes a treatment chamber 50 to treat the substrate 1, a showerhead 15 to supply gas into the chamber like a shower, a treatment gas supply port 6 to supply the treatment gas into the showerhead, a plasma generator 11 which is disposed outside the treatment chamber and which activates at least cleaning gas by plasma, an activated gas supply port 12 to supply gas activated by plasma generator into the showerhead, a support board 2 to support the substrate in the treatment chamber, a heater 3 to heat the substrate supported by the support board arranged below the support board, and an emission port 7 to ventilate the inside of the treatment chamber. In the device, the activated gas supply port is disposed at a position not superimposed with a region 16 to which the substrate is mounted when the activated gas supply port is projected in a vertical direction to the support board.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有生成远程等离子体的机构的基板处理装置，并且可以执行支撑板的均匀气体清洁以支撑基板。解决方案：基板处理装置包括处理基板1的处理室50，喷淋头15，以淋浴方式将气体供给到室内，处理气体供给口6将处理气体供给到喷头中，等离子体发电机11，其设置在处理室外部并且至少激活等离子体的清洁气体;活化气体供应端口12，用于将由等离子体发生器激活的气体供应到喷头中;支撑板2，用于将基板支撑在处理室中; 加热器3，用于加热由布置在支撑板下方的支撑板支撑的基板，以及排出口7，以使处理室的内部通风。在该装置中，当活性气体供给口沿与支撑基板垂直的方向突出时，活性气体供给口配置在不与安装基板的区域16重叠的位置。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2014175320A Semiconductor device manufacturing method, substrate processing apparatus and program 有权
标题翻译：半导体器件制造方法，基板处理装置和程序
公开(公告)号：JP2014175320A
公开(公告)日：2014-09-22
申请号：JP2013043539
申请日：2013-03-05
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HARADA KATSUYOSHI , HIROSE YOSHIRO , KAMAKURA TSUKASA , SANO ATSUSHI , WATAHASHI YOSHISATO
IPC分类号： H01L21/205 , C23C16/02 , C23C16/455 , H01L21/314
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/24 , C23C16/4408 , C23C16/45523 , C23C16/52 , H01L21/02205 , H01L21/02304 , H01L21/32055 , H01L21/67017
摘要： PROBLEM TO BE SOLVED: To improve level difference coverage and productivity in a deposition process of a thin film when forming the thin film on a substrate where an insulation film is formed on a surface.SOLUTION: A semiconductor device manufacturing method comprises the steps of: performing a treatment on a surface of an insulation film by supplying a first material containing a predetermined element and a halogen group to a substrate where the insulation film is formed on a surface; and performing, a predetermined number of times, a cycle which includes in one cycle a step of supplying a second material containing the predetermined element and the halogen group to the substrate and a step of supplying a third material to the substrate, thereby to form a thin film containing the predetermined element on the surface of the insulation film which is subjected to the treatment.
摘要翻译：要解决的问题：在表面上形成绝缘膜的基板上形成薄膜时，为了提高薄膜的沉积工艺中的水平差覆盖和生产率。解决方案：半导体器件制造方法包括以下步骤：通过将含有预定元素和卤素基团的第一材料供给到在表面上形成绝缘膜的基板，对绝缘膜的表面进行处理; 并且执行预定次数的循环，该循环在一个循环中包括将含有预定元素和卤素基团的第二材料供给到所述基板的步骤，以及向所述基板供给第三材料的步骤，从而形成在经过处理的绝缘膜的表面上含有预定元素的薄膜。

6. 发明专利

JP2011216846A Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus 有权
标题翻译：制造半导体器件的方法，加工基板的方法和基板处理装置
公开(公告)号：JP2011216846A
公开(公告)日：2011-10-27
申请号：JP2010272687
申请日：2010-12-07
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： TAKAZAWA HIROMASA , HIROSE YOSHIRO , KAMAKURA TSUKASA , KAGA YUKINAO
IPC分类号： H01L21/318 , C01B21/082 , C23C16/36 , C23C16/44 , H01L21/31
CPC分类号： H01L21/0228 , C23C16/36 , C23C16/45531 , H01L21/02167
摘要： PROBLEM TO BE SOLVED: To achieve a film quality excellent more than a conventional film quality, by modifying conventional types of films.SOLUTION: A carbonitride film of a predetermined thickness is formed on a substrate by performing, a predetermined number of times, a cycle including the steps of: supplying a source gas including a predetermined element into a process vessel accommodating the substrate under a condition where a CVD (Chemical Vapor Deposition) reaction is caused, and forming a first layer including the predetermined element on the substrate; supplying a carbon-containing gas into the process vessel to form a layer including carbon on the first layer, and forming a second layer including the predetermined element and the carbon; supplying the source gas into the process vessel under a condition where a CVD reaction is caused to additionally form a layer including the predetermined element on the second layer, and forming a third layer including the predetermined element and the carbon; and supplying a nitrogen-containing gas into the process vessel to nitride the third layer, and forming a carbonitride layer serving as a fourth layer including the predetermined element, the carbon, and nitrogen.
摘要翻译：要解决的问题：通过改变常规类型的膜来实现比常规膜质量优异的膜质量。解决方案：通过执行预定次数的循环，在基板上形成预定厚度的碳氮化物膜包括以下步骤：在引起CVD（化学气相沉积）反应的条件下，将包含预定元素的源气体供应到容纳基板的处理容器中，并在基板上形成包含预定元素的第一层; 将含碳气体供应到所述处理容器中以在所述第一层上形成包含碳的层，以及形成包含所述预定元素和所述碳的第二层; 在引起CVD反应的条件下将源气体供给到处理容器中，在第二层上另外形成包含预定元素的层，形成包含预定元素和碳的第三层; 并向所述处理容器供给含氮气体以氮化所述第三层，以及形成用作包含所述预定元素，所述碳和氮的第四层的碳氮化物层。

7. 发明专利

JP2010016033A Method for manufacturing semiconductor device and substrate treatment apparatus 审中-公开
标题翻译：制造半导体器件和基板处理装置的方法
公开(公告)号：JP2010016033A
公开(公告)日：2010-01-21
申请号：JP2008172134
申请日：2008-07-01
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YONEBAYASHI MASAHIRO , KAMAKURA TSUKASA , AKAE HISANORI
IPC分类号： H01L21/205 , C23C16/44 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method for improving the uniformity of a formed film thickness and reproducibility by suppressing a variation in the uniformity of the formed film thickness caused by the deformation of a susceptor when a treatment chamber of a substrate treatment apparatus is subjected to dry cleaning.
SOLUTION: The substrate treatment apparatus includes: a treatment chamber 46; a susceptor 56; a film forming gas supply line 58; fluorine-based gas supply lines 102, 103 for supplying fluorine-based gases; an activation mechanism 101 for activating the fluorine-based gas by plasma; an activated gas supply line 58 for supplying the fluorine-based gas activated by the plasma by the activation mechanism to the inside of the treatment chamber; and a control section 41 for controlling so that the treatment of forming a film by supplying the film forming gas to the substrate is repeated at least one or more times, the treatment of carrying a dummy substrate into the treatment chamber and placing the carried substrate on the susceptor and supplying the fluorine-base gas activated by the plasma into the treatment chamber is repeated a plurality of times, and the treatment of carrying the substrate into the treatment chamber again and forming a film is executed at least at one or more times.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过抑制由基体处理室的基座的变形引起的成形膜厚度的均匀性的变化来提高成膜厚度和再现性的均匀性的方法对设备进行干洗。解决方案：基板处理装置包括：处理室46; 感受器56; 成膜气体供给管线58; 供给氟系气体的氟系气体供给管线102,103; 用于通过等离子体激活氟基气体的激活机构101; 用于将通过激活机构激活的等离子体的氟系气体供给到处理室的内部的活性气体供给管线58; 以及控制部分41，用于控制，使得通过将成膜气体供给到基板来形成膜的处理重复至少一次或多次，将伪基板运送到处理室中并将载置的基板放置在承受器并且将由等离子体激活的氟基气体供给到处理室中多次重复，并且至少一次或多次执行再次将基板输送到处理室中并形成膜的处理。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2015046634A 半導体装置の製造方法、基板処理方法及び基板処理装置有权
标题翻译：制造半导体器件的方法，基板处理方法和基板处理装置
公开(公告)号：JP2015046634A
公开(公告)日：2015-03-12
申请号：JP2014236645
申请日：2014-11-21
申请人：株式会社日立国際電気 , Hitachi Kokusai Electric Inc
发明人： HIROSE YOSHIRO , TAKAZAWA HIROMASA , KAMAKURA TSUKASA , NAKAMURA YOSHINOBU , SASAJIMA RYOTA
IPC分类号： H01L21/314 , C23C16/42 , H01L21/31
摘要：【課題】低誘電率、低エッチングレート、高絶縁性の特性を備える絶縁膜を形成する。【解決手段】基板に対して所定元素含有ガスを供給する工程と、基板に対して炭素含有ガスを供給する工程と、基板に対して窒素含有ガスを供給する工程と、を非同時に行うセットを所定回数行う工程と、基板に対して酸素含有ガスを供給する工程と、を非同時に行うサイクルを所定回数行うことで、前記基板上に酸炭窒化膜を形成する工程を有する。【選択図】図4
摘要翻译：要解决的问题：形成具有低介电常数，低蚀刻速率和高绝缘特性的绝缘膜。解决方案：制造半导体器件的方法包括通过执行循环在基板上形成氮化硅膜的步骤将用于将含有预定元素的气体供给到基板的步骤的步骤，向基板供给含碳气体的步骤以及向基板供给预定次数的含氮气体的步骤非同时地，以及用于非同时地向基板供给含氧气体的步骤的循环。

9. 发明专利

JP2011238894A Method of manufacturing semiconductor device, substrate processing method, and substrate processing apparatus 有权
标题翻译：制造半导体器件的方法，衬底处理方法和衬底处理装置
公开(公告)号：JP2011238894A
公开(公告)日：2011-11-24
申请号：JP2010280421
申请日：2010-12-16
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HIROSE YOSHIRO , TAKAZAWA HIROMASA , KAMAKURA TSUKASA , NAKAMURA YOSHINOBU , SASAJIMA RYOTA
IPC分类号： H01L21/318 , C23C16/30 , C23C16/455 , H01L21/31 , H01L21/316
CPC分类号： H01L21/67069 , C23C16/30 , C23C16/45531 , C23C16/45546 , H01L21/02104 , H01L21/02126 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0223 , H01L21/02247 , H01L21/0228 , H01L21/67011 , H01L21/67017
摘要： PROBLEM TO BE SOLVED: To form an insulator film having such characteristics as low dielectric constant, low etching rate, and high insulation property.SOLUTION: A set of steps includes a step in which the gas containing a predetermined element is supplied under such condition as CVD reaction is caused, into a process chamber which houses a substrate, so that a layer containing predetermined element is formed on the substrate, a step in which the gas containing carbon is supplied into the process chamber so that a layer containing carbon is formed on the layer containing predetermined element, to form a layer containing predetermined element and carbon, and a step in which the gas containing nitrogen is supplied into the process chamber so that the layer containing predetermined element and carbon is nitrided to form a carbonitride layer. Another step forms a carbonitride layer of predetermined thickness by performing the set by predetermined frequency. One cycle includes that step and a step in which the gas containing oxygen is supplied into the process chamber so that the carbonitride layer having the predetermined thickness is oxidized to form a carbonitride oxide film. The cycle is performed by predetermined frequency to form a carbonitride oxide film having a predetermined film thickness on the substrate.
摘要翻译：要解决的问题：形成具有低介电常数，低蚀刻速率和高绝缘性等特性的绝缘膜。解决方案：一组步骤包括一个步骤，其中在诸如CVD反应的条件下将含有预定元素的气体供应到容纳衬底的处理室中，从而在包含预定元素的层上形成含有预定元素的层基板，将含有碳的气体供给到处理室中使得含有碳的层的层形成在包含预定元素的层上以形成含有预定元素和碳的层的步骤，以及其中含有将氮气供应到处理室中，使含有预定元素和碳的层被氮化以形成碳氮化物层。通过以预定频率执行该组，另一步形成预定厚度的碳氮化物层。一个循环包括该步骤和将含有氧气的气体供应到处理室中以使具有预定厚度的碳氮化物层被氧化以形成碳氮化物膜的步骤。循环以预定的频率进行，以在衬底上形成具有预定膜厚度的碳氮化物膜。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2007095754A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007095754A
公开(公告)日：2007-04-12
申请号：JP2005279600
申请日：2005-09-27
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： AKAE HISANORI , HIROSE YOSHIRO , KAMAKURA TSUKASA , YONEBAYASHI MASAHIRO
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which reaction between remaining gas elements and the surface of a substrate can be made uniform after treatment of the substrate, and the uniformity of substrate treatment can be improved within the substrate surface.
SOLUTION: A substrate is taken in a treatment chamber, and a processing gas is supplied into the treatment chamber to treat the substrate. Next, after the treatment of the substrate, the treatment chamber is purged while the treated substrates are being turned therein, and reaction between remaining gas elements and the surface of the substrate is made uniform after the treatment. Then, the treated substrates are taken out from the treatment chamber.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种制造半导体器件的方法，通过该方法可以在处理衬底之后使剩余气体元件和衬底表面之间的反应均匀，并且可以提高衬底处理的均匀性基材表面。解决方案：将基板带入处理室，并将处理气体供应到处理室中以处理基板。接下来，在处理基板之后，处理室在被处理的基板被转动的同时被清除，并且在处理之后使剩余气体元件和基板表面之间的反应均匀。然后，将处理过的基板从处理室中取出。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式