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101. 发明专利

JPS59100567A SEMICONDUCTOR SWITCHING ELEMENT 失效
公开(公告)号：JPS59100567A
公开(公告)日：1984-06-09
申请号：JP20935182
申请日：1982-12-01
申请人： HITACHI LTD
发明人： YAO TSUTOMU , NAGANO TAKAHIRO , OIKAWA SABUROU , OOGAMI MICHIO , YATSUNO KOUMEI
IPC分类号： H01L29/41 , H01L21/331 , H01L23/482 , H01L29/73 , H01L29/74
摘要： PURPOSE:To improve uniformity in turn OFF operation, by reducing the lateral resistance of electrodes, which are wired on the surface of a semiconductor substrate to 1/5-1/10 the conventional value. CONSTITUTION:Cathode electrodes 3 and gate electrodes 4 are electrically connected to copper foil electrodes 6 and 7, which are bonded to an organic insulating film 5, by solder layers 9 and 10. A cathode side connecting electrode 12 is electrically connected to the electrode 6 on an (n) emitter layer nE at a part of a through hole 13 that is partially provided in the insulating film 5 by a solder layer 141. A gate side connecting electrode 15 is connected to the copper foil electrode 7 at a part of a through hole 16, which is provided in the film 5, bt a solder layer 142. Then, the lateral resistance of the electrodes 6 and 7 is reduced to 1/5-1/10. Therefore, uniformity of operation in the longitudinal direction in one (n) emitter at the same time of turn OFF is improved.

102. 发明专利

JPS5895865A GATE TURN OFF THYRISTOR 失效
公开(公告)号：JPS5895865A
公开(公告)日：1983-06-07
申请号：JP19284781
申请日：1981-12-02
申请人： HITACHI LTD
发明人： YAO TSUTOMU , NAGANO TAKAHIRO , OIKAWA SABUROU
IPC分类号： H01L29/417 , H01L29/74 , H01L29/744
摘要： PURPOSE:To increase a current cutoff limit at which the turn OFF operation can be performed safely, by providing a rectangular shape of the main surfaces of a semiconductor pellet so that one side of the rectangle is longer than the opposite side, and aligning the longitudinal direction of each emitter belt shaped region with the longitudinal direction of the main surfaces. CONSTITUTION:The pellet 21 of the thyristor has a four layer structure pE, nB, pB, and nE between a pair of the main surfaces 211 and 212 which are located at opposing sides each other. The nE layer and pE layers are exposed in one main surface 211, and the pE layer is exposed in the other main surface 212. The nE layer comprises a plurality of long belt shaped regions 213 which are arranged so that their longitudinal direction is aligned with the longitudinal direction of the main surfaces. Each emitter belt shaped region 213 has a width of about 0.3mm. and a length of about 4.0mm.. Two emitter belts shaped regions are provided. A cathode electrode 22 is contacted with the two emitter belt shaped regions 213 at a low resistance. A gate electrode 23 is contacted with the surface of the pB layer surrounding the emitter belt shaped regions 213 at a low resistance. An anode electrode 24 is contacted with the surface of the opposite pE layer at a low resistance.

103. 发明专利

JPS5834966A GATE TURN OF THYRISTOR 失效
公开(公告)号：JPS5834966A
公开(公告)日：1983-03-01
申请号：JP13279581
申请日：1981-08-26
申请人： HITACHI LTD
发明人： HARADA EIJI , SAKURADA SHIYUUROKU , IKEDA HIROHIKO , NAGANO TAKAHIRO
IPC分类号： H01L29/744 , H01L29/74
摘要： PURPOSE:To enable a good characteristic of each kind and a process of high power, by providing a fifth semiconductor layer beside four semiconductor layers as a thyristor and low-resistance-contacting the first main electrode to the first and fifth semiconductor layers. CONSTITUTION:A GTO unit 1 has a p type emitter layer 2, an n type base layer 3, p type base layer 4, an n type emitter layer 5 and an n type collector layer 6 which is buried in the p type emitter layer 2. The n type collector layer 6 is provided on a part whereon the n type emitter layer 5 is vertically projected on the lower main surface. To the p type emitter layer 2 and the n type collector layer 6, an anode electrode (first main electrode) 7 is low-resistance- contacted on the lower main surface (first main surface). On the upper main surface (second main surface), a gate electrode (control electrode) 8 is low- resistance-contacted to the p type base layer 4, and a cathode electrode (second main electrode) 9 is low-resistance-contacted to the n type emitter layer 5.

104. 发明专利

JPS57201077A SEMICONDUCTOR SWITCHING DEVICE 失效
公开(公告)号：JPS57201077A
公开(公告)日：1982-12-09
申请号：JP8576081
申请日：1981-06-05
申请人： HITACHI LTD
发明人： YAO TSUTOMU , NAGANO TAKAHIRO , OIKAWA SABUROU , HORIE SATORU
IPC分类号： H01L29/08 , H01L29/74 , H01L29/744
摘要： PURPOSE:To improve switching operation and ON-voltae evenness, and control a large power with a minimum size, by differing a length of cathode-emitter layer between inner and outer coaxial layers. CONSTITUTION:Lengths of coaxial cathode-emitter layers are different between inner and outer sides. Carriers are uniformly injected from an anode-emitter layer. Carriers are uniformly injected from an anode-emitter layer. Current density is uniformed at each unit GTO. Turn-OFF time and ON voltag are lined up. Namely, lengths of radial cathode-emitter layers 2 along multiple rings R1-R5 go longer from the inner ring R1 to the outer ring R5. Besides, the inner end, center and outer end are approximately even among all rings R1-R5. Therefore, current is not concentrated to a unit GTO partially. Maximum cutoff current is improved and OFF-gate signal is small. A large current can be cut off.

105. 发明专利

JPS5778172A Gate turn-off thyristor 失效
标题翻译：门关闭三通阀
公开(公告)号：JPS5778172A
公开(公告)日：1982-05-15
申请号：JP15388880
申请日：1980-11-04
申请人： Hitachi Ltd
发明人： NAGANO TAKAHIRO , YAO TSUTOMU
IPC分类号： H01L29/744 , H01L29/08
CPC分类号： H01L29/0839
摘要： PURPOSE:To obtain a thyristor having large maximum shut-off current by reducing the thickness of the center of a cathode-emitter layer forming a thyristor thinner than that at the periphery and forming a density peak higher than the impurity in the surface of a base layer adjacent to the cathode-emitter layer in the prescribed position in the base layer. CONSTITUTION:A semiconductor substrate 1 is formed of a P type anode-emitter layer 2, an N type base layer 3, a P type base layer 4 and N type cathode-emitter layer 5 made of center portion 51 and peripheral portion 52. The layer 2 is ohmically contacted with the anode electrode 6 formed on the lower main surface together with N type shortcircuit layers 31, 32 exposed on the lower main surface, and a control electrode 7 and a cathode electrode 8 are respectively formed at the layers 4, 5. In this structure, WnEC
摘要翻译：目的：通过将形成晶闸管的阴极 - 发射极层的中心的厚度减小到比周边薄的晶闸管的中心厚度，形成比基极表面的杂质更高的密度峰值，从而获得具有大的最大截止电流的晶闸管在基层中的规定位置与阴极 - 发射极层相邻的层。构成：半导体衬底1由中心部分51和周边部分52制成的P型阳极 - 发射极层2，N型基底层3，P型基极层4和N型阴极 - 发射极层5形成。层2与形成在下主表面上的阳极电极6一起与暴露在下主表面上的N +型短路层31,32一起欧姆接触，并且控制电极7和阴极电极8分别形成在在该结构中，设置WnEC

106. 发明专利

JPS5762562A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5762562A
公开(公告)日：1982-04-15
申请号：JP13757980
申请日：1980-10-03
申请人： Hitachi Ltd
发明人： YAO TSUTOMU , NAGANO TAKAHIRO
IPC分类号： H01L29/41 , H01L23/48 , H01L29/417 , H01L29/74 , H01L29/744
CPC分类号： H01L24/72 , H01L29/744 , H01L2924/01082 , H01L2924/1301 , H01L2924/00
摘要： PURPOSE:To obtain a GTO thyristor with the uniform operation of an operation region by forming an annular gate electrode plate partly in an opposed manner with a gate electrode and contacting it with a semiconductor substrate by the pressure from an external cathode electrode via an insulator. CONSTITUTION:An annular cathode electrode plate 101, a disc-shaped cathode electrode plate 102, a gate electrode plate 110 and a cathode electrode 6 of a GTO substrate 1 are contacted under pressure with each other. The plate 110 is bonded to an insulating ceramic ring 111, and is pressure contacted with the surface of the GTO substrae by the external pressure via the ring 111. A gate lead 112 is connnected to the plate 110. Since the thickness and the width of the plate 110 are sufficiently large and the resistance of the plate is low, the voltage drop of the direction along the gate electrode plate can be remarkably reduced, thereby equalizing the turn-OFF operation and a preferable turn-OFF characteristics can be obtained.
摘要翻译：目的：通过以与栅电极相对的方式部分地形成环形栅电极并通过绝缘体通过来自外部阴极的压力与半导体衬底接触来获得操作区域的均匀操作的GTO晶闸管。构成：将GTO基板1的环状阴极电极板101，盘状阴极电极板102，栅电极板110和阴极电极6彼此压力接触。板110结合到绝缘陶瓷环111，并通过环111通过外部压力与GTO基底的表面压力接触。栅极引线112连接到板110.由于厚度和宽度板110足够大并且板的电阻低，可以显着地减小沿着栅电极板的方向的电压降，从而使关断操作均衡，并且可以获得优选的关断特性。

107. 发明专利

JPS56124238A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56124238A
公开(公告)日：1981-09-29
申请号：JP2661780
申请日：1980-03-05
申请人： HITACHI LTD
发明人： YAO TSUTOMU , NAGANO TAKAHIRO
IPC分类号： H01L21/52 , H01L21/58 , H01L23/48 , H01L29/41 , H01L29/74
摘要： PURPOSE:To prevent the deformation caused by the creeping of the electrode film in a compressed type semiconductor device by a method wherein the inharmoniousness of the pressure welding strength between the electrode members to be pressure-welded for a wide area and the pressure welding strength between the electrode members to be pressure-welded on a narrow area is removed. CONSTITUTION:An n layer 211 is formed by performing a P-diffusion from one side and a pB layer 13 and a pB 11 layer are formed simultaneously by performing a Ga-diffusion from both sides using an n type Si substrate 1 as base. Then, an nE layer 14 and an n layer 214 are formed simultaneously by performing a B-diffusion from one side and subsequently, the concaved section to be used for a gate electrode 3 is formed by performing an etching. Then, an anode 5 is soldered using an Au-Sb alloy, an Al cathode 2, the gate electrode 3 and a film 22 are provided, and in between them an SiO2 film is covered. An electrode 2 and the film 22 are connected by placing a W buffer plate 4 on them, a Cu electrode is contacted to the W plate 4 and an electrode 5 and the pressure of approximately 1,000kg is applied. This pressure is applied not only to the cathode 2, but also to the metal film 22 having the same height and the pressure per unit are is decreased, thereby enabling to prevent the deformation caused by the creeping of the Al cathode 2 and to obtain an excellent electrical and thermal contact.

108. 发明专利

JPS5612770A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING DEVICE 失效
公开(公告)号：JPS5612770A
公开(公告)日：1981-02-07
申请号：JP8685879
申请日：1979-07-11
申请人： HITACHI LTD
发明人： OIKAWA SABUROU , TERASAWA YOSHIO , YAO TSUTOMU , NAGANO TAKAHIRO , OKAMURA MASAHIRO
IPC分类号： H01L29/74 , H01L29/10 , H01L29/739
摘要： PURPOSE:To prevent deterioration of withstand voltage between electrodes by having the roundish-shaped semiconductor surface between two kinds of electrodes. CONSTITUTION:The shape of an angle 7 of the stepped section between a cathode layer 6 and a gate electrode lead out section 3 is gently sloped. Consequently, the adhesion of a passivation film 8 at this section is excellent. Moreover, as a resist film can be applied uniformly at the angle section, the passivation film 8 is not broken off when making an opening by photo etching. Accordingly, the oxide film 8 can be formed on the whole surface of the necessary section as a normal passivation film 8.

109. 发明专利

JPS532089A SEMICONDUCTOR SWITCHING UNIT 失效
公开(公告)号：JPS532089A
公开(公告)日：1978-01-10
申请号：JP7621476
申请日：1976-06-28
申请人： HITACHI LTD
发明人： NAGANO TAKAHIRO
IPC分类号： H01L29/73 , H01L21/331 , H01L29/74 , H01L29/744 , H03K17/732
摘要： PURPOSE:To prevent effectively the mistaken reignition at the turn-off time for a composite-type semiconductor device of the gate turn-off thyrstor and transistor, by satisfying hFE

110. 发明专利

JPS52135037A CURRENT BREAKER CIRCUIT SYSTEM 失效
公开(公告)号：JPS52135037A
公开(公告)日：1977-11-11
申请号：JP5085676
申请日：1976-05-06
申请人： HITACHI LTD
发明人： NAGANO TAKAHIRO
IPC分类号： H03K17/732 , H03K17/73
摘要： PURPOSE:To decrease the power loss at the turn off time of a gate turn off thyristor by characterizing the gate turn off thyristor in the turn on and on status and driving a transistor at the time of turn off, then shunting a part of load charge current.

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