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91. 发明专利

JPS6123521B2 JPS6123521B2 - 失效
公开(公告)号：JPS6123521B2
公开(公告)日：1986-06-06
申请号：JP9006177
申请日：1977-07-27
申请人： Rikagaku Kenkyusho
发明人： NANBA SUSUMU , AOYANAGI KATSUNOBU , SANO KAZUO
IPC分类号： G02B5/18

92. 发明专利

JPS60118689A METHOD FOR GROWING CRYSTAL 失效
公开(公告)号：JPS60118689A
公开(公告)日：1985-06-26
申请号：JP22519483
申请日：1983-11-29
申请人： RIKAGAKU KENKYUSHO
发明人： AOYANAGI KATSUNOBU , NANBA SUSUMU , SEGAWA YUUZABUROU , IWAI SOUHACHI , DOI KOUNEN
IPC分类号： C30B25/10 , C30B25/04 , H01L21/205
摘要： PURPOSE:To grow a desired crystal without using a mask, by irradiating a selected area on a substrate placed in an atmosphere of a substance to be grown into a crystal with particle or light beam to control the temperature in the area. CONSTITUTION:In growing a crystal of GaAs or GaAlAs on a substrate 2, Ga(CH3)3, AsH3 and Al(CH3)3 containing the above-mentioned compound as a component are diluted wth H2, and supplied from injection holes 11,12 and 13 into a vessel 1 to form the atmosphere of the compounds. A light beam is irradiated from a light source 4, and the fundamental composition materials of the crystal are separated from the compounds in the vapor phase to grow the crystal in a selected area on the substrate 2. Light is projected in the form of a pattern to be formed on the substrate 2 to grow the crystal previously in the form of the pattern. The atmosphere of an additive, e.g. Zn;S, or a compound containing the additive e.g. Zn(C2H5)2;H2S, is formed, and light may be irradiated on a specific site of the crystal pattern in the resultant atmosphere to injecct the additive in the form the crystal.

93. 发明专利

JPS6028240A MEASURING DEVICE FOR ELECTRICAL CHARACTERISTIC OF SEMICONDUCTOR 失效
公开(公告)号：JPS6028240A
公开(公告)日：1985-02-13
申请号：JP13626283
申请日：1983-07-26
申请人： RIKAGAKU KENKYUSHO
发明人： SEGAWA YUUZABUROU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01L21/66
摘要： PURPOSE:To measure the life of the carrier and the mobility of a semiconductor in a noncontacting and nondestructive manner by driving a plurality of semiconductor pulse lasers by a driving power supply, irradiating laser beams to the semiconductor while also irradiating other semiconductor pulse lasers to the semiconductor, and detecting obtained reflected and diffracted beams and transmitted diffracted beams by a photodetector. CONSTITUTION:Semiconductor lasers 1, 2, 3 are driven by a pulse laser power supply 21, and laser beams from these lasers 1, 2, 3 are projected to 50% mirrors 5, 6, 7. Laser beams reflected by the 50% mirrors are reflected by 100% mirrors 8, 9, 10 and projected to a sample 14, and transmitted beams are also projected to the sample 14 by 100% mirrors 11, 12, 13. Beams from a semiconductor laser 4 separate from these semiconductor lasers are also irradiated to the same focus, and beams 17 reflected from the sample 14 are detected by a photodetector 22, and recorded by an attenuation recording device 24. Beams 18 transmitted at the same time are detected by a photodetector 26 and sent to a device 24, and the life of the carrier and the mobility of the sample are judged by a decay time while the sample 14 is moved by a shifter 23.

94. 发明专利

JPS5815765B2 失效
公开(公告)号：JPS5815765B2
公开(公告)日：1983-03-28
申请号：JP1507680
申请日：1980-02-08
申请人： RIKAGAKU KENKYUSHO
发明人： NANBA SUSUMU , SEGAWA JUZABURO , AOYANAGI KATSUNOBU
IPC分类号： G02F1/35 , G02B27/00 , G02F1/00 , G21B1/03

95. 发明专利

JPS57112705A MANUFACTURE OF HOLOGRAPHIC GRATING 失效
公开(公告)号：JPS57112705A
公开(公告)日：1982-07-13
申请号：JP18554480
申请日：1980-12-29
申请人： SHIMADZU CORP , RIKAGAKU KENKYUSHO
发明人： HAIKATA HIDEKI , SANO KAZUO , NANBA SUSUMU , AOYANAGI KATSUNOBU
IPC分类号： G02B5/18 , G02B5/32 , G03H5/00
摘要： PURPOSE:To efficiently form a grating in a photoresist layer laid on a substrate by combinedly applying holography and ion etching in an oblique direction. CONSTITUTION:A photoresist layer 2 is laid on a substrate 1, and parallel lattice grooves 6 with a sine wave-shaped section are cut in the layer 2 by holography. The layer 2 is then irradiated with ion beams 4 at the angle of a direction which is obliquely upward to the grooves 6 and does not make a component projected on the lattice parallel to the grooves 6, e.g. at about 30 deg. angle of incidence to the substrate surface. The etching speed is maximized at about 60 deg. angle of incidence. Thus, the layer 2 is etched to form a grating (theta is a blaze angle) having lattice grooves 5 with an almost saw-toothed section.

96. 发明专利

JP2002289015A SHORT FOCUS LENS CONDENSING LIGHT EMITTING DIODE LIGHTING DEVICE 失效
公开(公告)号：JP2002289015A
公开(公告)日：2002-10-04
申请号：JP2001092337
申请日：2001-03-28
申请人： RIKAGAKU KENKYUSHO
发明人： IWAI SOHACHI , MIHARA MASARU , AOYANAGI KATSUNOBU
IPC分类号： F21L4/00 , F21V5/04 , F21V13/02 , F21V14/00 , F21Y101/02 , H01L33/50 , H01L33/54 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To remove blue-violet light from the center area of white light and enhance luminous intensity when a light emitting diode which emits white light is used as a light source. SOLUTION: This short focus lens condensing light emitting diode lighting device has a light emitting diode which emits white light and a short focus convex lens to which the white emission light emitted from the light emitting diode is incident, wherein the light emitting diode and the short focus convex lens is arranged so that a length between the light emitting diode and the center of the short focus convex lens is almost equal to the focal length of the short focus convex lens.

97. 发明专利

JP2002285335A CATALYTIC PATTERN FOR PRODUCING CARBON NANOTUBE 失效
公开(公告)号：JP2002285335A
公开(公告)日：2002-10-03
申请号：JP2001135590
申请日：2001-03-27
申请人： NAT INST OF ADV IND & TECHNOL , RIKAGAKU KENKYUSHO , AGO HIROKI , YUMURA MORIO
发明人： AGO HIROKI , TAKE TSUGUHATSU , YUMURA MORIO , TSUKAGOSHI KAZUHITO , AOYANAGI KATSUNOBU
IPC分类号： C01B31/02 , C23C16/26
摘要： PROBLEM TO BE SOLVED: To provide a catalytic pattern used when a carbon nanotube is synthesized by thermally decomposing a carbon-containing material. SOLUTION: The catalytic pattern for producing a carbon nanotube is formed on the surface of a substrate. The catalytic pattern is formed, from a pattern consisting of a mixture containing a photosensitive material and a catalyst, and previously formed on the substrate, by removing the photosensitive material contained in the pattern.

98. 发明专利

JP2002170776A LOW-DISLOCATION BUFFER, ITS METHOD OF MANUFACTURE AND DEVICE PROVIDED THEREWITH 失效
公开(公告)号：JP2002170776A
公开(公告)日：2002-06-14
申请号：JP2000368566
申请日：2000-12-04
申请人： RIKAGAKU KENKYUSHO , UNIV WASEDA
发明人： HIRAYAMA HIDEKI , AOYANAGI KATSUNOBU , HIRATA AKIRA
IPC分类号： C23C16/30 , H01L21/20 , H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/06 , H01L33/12 , H01L33/32 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a low-dislocation buffer which can be formed by a simple process and in a short time and in which no crack is in danger of occurring. SOLUTION: With respect to the low-dislocation buffer which is formed between a substrate and a nitride semiconductor as a device material which is formed for constituting a device structure on the substrate, a specified number of first layers of nitride semiconductor containing foreign materials at a density exceeding the doping level and second layers of nitride semiconductor containing no foreign material are alternately laminated on the substrate to form a superlattice structure.

99. 发明专利

JPH11354840A FABRICATION OF GAN QUANTUM DOT STRUCTURE AND USE THEREOF 失效
公开(公告)号：JPH11354840A
公开(公告)日：1999-12-24
申请号：JP15584198
申请日：1998-06-04
申请人： MITSUBISHI CABLE IND LTD , RIKAGAKU KENKYUSHO , TANAKA SATORU
发明人： TANAKA SATORU , AOYANAGI KATSUNOBU , OUCHI YOICHIRO , OKAGAWA HIROAKI , TADATOMO KAZUYUKI
IPC分类号： H01L33/32 , H01S5/00 , H01S5/323 , H01S5/343 , H01L33/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a method for fabricating a new GaN quantum dot structure having a process simplified as compared with a conventional method and applicable to fabrication of semiconductor light emitting element. SOLUTION: Surface state of the upper surface (base surface) of a base layer B composed of a GaN material is varied by an antisurfactant S and a GaN material having composition of three components and specific lattice matching performance is supplied to the base surface as a material gas (a) by vapor phase growth. Consequently, quantum dots (d) of a GaN material having compositional ratio different from that of the supplied GaN material are distributed on the base surface, and a cap layer C of a GaN material having compositional ratio identical to that of the supplied GaN based material is grown on the base surface while embedding the quantum dots (d) thus attaining a GaN quantum dot structure.

100. 发明专利

JPH1079501A METHOD FOR FORMING QUANTUM DOT AND QUANTUM DOT STRUCTURE 失效
公开(公告)号：JPH1079501A
公开(公告)日：1998-03-24
申请号：JP23344296
申请日：1996-09-03
申请人： RIKAGAKU KENKYUSHO , TANAKA SATORU
发明人： TANAKA SATORU , AOYANAGI KATSUNOBU
IPC分类号： H01L29/06 , H01L21/20 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/323 , H01S5/343 , H01L33/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To form a quantum dot, even with a material system which cannot form the quantum dot in a surface energy equilibrium condition in the ordinary manufacturing method. SOLUTION: Before a quantum dot is formed, a surfactant which changes a surface condition is made to act upon a semiconductor layer surface. First, an AlN buffer layer 32 is formed on the surface of a substrate 31 (a), and a AlGaN clad layer 33 is formed (b) thereon. Then a tetraethyl silane (surfactant) is supplied to the surface of the clad layer 33 (c). Continuing, TMG and NH3 gases are supplied to the surface of the AlGaN clad layer 33 for a short time, to have GaN quantum dots 34 (d) grow. Lastly, an AlGaN cap layer is formed, and the GaN quantum dots 34 are buried in the cap layer (e).

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