专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS56111826A WAVEFORM FORMING METHOD FOR LIGHT PULSE 失效
公开(公告)号：JPS56111826A
公开(公告)日：1981-09-03
申请号：JP1507680
申请日：1980-02-08
申请人： RIKAGAKU KENKYUSHO
发明人： NANBA SUSUMU , SEGAWA YUUZABUROU , AOYANAGI KATSUNOBU
IPC分类号： G02F1/35 , G02B27/00 , G02F1/00 , G21B1/03
摘要： PURPOSE:To improve optical stability while simplifying and miniaturizing device constitution, by forming a random waveform by transmitting light through a medium in a prescribed medium which varying delay time as the function of transmission distance and then by focusing the transmitted light. CONSTITUTION:When monochromatic light with place-intensity distribution is incident to a medium which has a prescribed thickness and decreases in group speed of light extremely owing to abnormal dispersion, the light is delayed in time according to the thickness of the medium. When the transmitted light of it is focused by using a convex lens or concave mirror, time change in light intensity at the focus shows a rise as shown by the exponential function in the figure. Thus, the shape of the medium decreasing in light group speed owing to abnormal dispersion of light is changed adequately to generate a prescribed delay time as the function of transmission distance, so that a desired light pulse waveform can be obtained on a focal surface.

2. 发明专利

JPS60118690A METHOD FOR GROWING CRYSTAL 失效
公开(公告)号：JPS60118690A
公开(公告)日：1985-06-26
申请号：JP22519583
申请日：1983-11-29
申请人： RIKAGAKU KENKYUSHO
发明人： AOYANAGI KATSUNOBU , NANBA SUSUMU , SEGAWA YUUZABUROU , IWAI SOUHACHI , DOI KOUNEN
IPC分类号： C30B25/02 , C30B25/04 , H01L21/205
摘要： PURPOSE:To grow a desired crystal without using a mask, by irradiating a selected area on a substrate placed in an atmosphere of a compound containing a substance to be grown into the crystal with light at a wavelength for decomposing the above-mentioned compound from the above-mentioned substance. CONSTITUTION:In growing a crystal of GaAs or GaAlAs on a substrate 2, Ga(CH3)3, AsH2 and Al(CH3)3, are diluted with H2, and supplied from injection holes 11,12 and 13 into a vessel 1 to form the atmosphere of the compounds. Light at a wavelength for separating the fundamental composition materials of the crystal from the above-mentioned compounds is projected from a light source 4 on a selected area on the substrate 2 to adjust the area to a temperature necessary for crystal growth. For example, if Zn or S is added to the crystal, a compound containing the element, e.g. Zn(C2H5)2 or H2S, is injected from injection holes 15 and 14, and light at a wavelength for dissociating the Zn or S is projected on the substrate 2 to afford the aimed crystal containing the additive.

3. 发明专利

JPS607184A LIGHT EMITTING ELEMENT WHEREIN ENERGY BARRIERS ARE PROVIDED 失效
公开(公告)号：JPS607184A
公开(公告)日：1985-01-14
申请号：JP11367983
申请日：1983-06-24
申请人： RIKAGAKU KENKYUSHO
发明人： SEGAWA YUUZABUROU , AOYANAGI KATSUNOBU , NANBA SUSUMU , HANAMURA EIICHI
IPC分类号： H01L33/06 , H01L33/30 , H01L33/00
摘要： PURPOSE:To enhance transition probability and to improve light emitting efficiency, by providing energy barriers on both surfaces of a thin film of a semiconductor, in a light emitting element using an indirect transition type semiconductor. CONSTITUTION:Both sides of a thin film 1 of an indirect transition type semiconductor AlAs are held by AlP substrates 2 and 3, and electrodes 4 and 5 are formed. The width of the forbidden band of the substrates 2 and 3 is large with respect to the indirect transition type semiconductor AlAs. Therefore energy barriers are formed against the electrons of AlAs. Thus the electrons of AlAs are confined by the energy barriers and become a standing wave. Therefore, transition to a valence band becomes easy. Thus transition probability is improved to the large extent. Intense light is generated in the region of AlAs, and availability as a light emitting diode can be implemented.

4. 发明专利

JPS60118689A METHOD FOR GROWING CRYSTAL 失效
公开(公告)号：JPS60118689A
公开(公告)日：1985-06-26
申请号：JP22519483
申请日：1983-11-29
申请人： RIKAGAKU KENKYUSHO
发明人： AOYANAGI KATSUNOBU , NANBA SUSUMU , SEGAWA YUUZABUROU , IWAI SOUHACHI , DOI KOUNEN
IPC分类号： C30B25/10 , C30B25/04 , H01L21/205
摘要： PURPOSE:To grow a desired crystal without using a mask, by irradiating a selected area on a substrate placed in an atmosphere of a substance to be grown into a crystal with particle or light beam to control the temperature in the area. CONSTITUTION:In growing a crystal of GaAs or GaAlAs on a substrate 2, Ga(CH3)3, AsH3 and Al(CH3)3 containing the above-mentioned compound as a component are diluted wth H2, and supplied from injection holes 11,12 and 13 into a vessel 1 to form the atmosphere of the compounds. A light beam is irradiated from a light source 4, and the fundamental composition materials of the crystal are separated from the compounds in the vapor phase to grow the crystal in a selected area on the substrate 2. Light is projected in the form of a pattern to be formed on the substrate 2 to grow the crystal previously in the form of the pattern. The atmosphere of an additive, e.g. Zn;S, or a compound containing the additive e.g. Zn(C2H5)2;H2S, is formed, and light may be irradiated on a specific site of the crystal pattern in the resultant atmosphere to injecct the additive in the form the crystal.

5. 发明专利

JPS6028240A MEASURING DEVICE FOR ELECTRICAL CHARACTERISTIC OF SEMICONDUCTOR 失效
公开(公告)号：JPS6028240A
公开(公告)日：1985-02-13
申请号：JP13626283
申请日：1983-07-26
申请人： RIKAGAKU KENKYUSHO
发明人： SEGAWA YUUZABUROU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01L21/66
摘要： PURPOSE:To measure the life of the carrier and the mobility of a semiconductor in a noncontacting and nondestructive manner by driving a plurality of semiconductor pulse lasers by a driving power supply, irradiating laser beams to the semiconductor while also irradiating other semiconductor pulse lasers to the semiconductor, and detecting obtained reflected and diffracted beams and transmitted diffracted beams by a photodetector. CONSTITUTION:Semiconductor lasers 1, 2, 3 are driven by a pulse laser power supply 21, and laser beams from these lasers 1, 2, 3 are projected to 50% mirrors 5, 6, 7. Laser beams reflected by the 50% mirrors are reflected by 100% mirrors 8, 9, 10 and projected to a sample 14, and transmitted beams are also projected to the sample 14 by 100% mirrors 11, 12, 13. Beams from a semiconductor laser 4 separate from these semiconductor lasers are also irradiated to the same focus, and beams 17 reflected from the sample 14 are detected by a photodetector 22, and recorded by an attenuation recording device 24. Beams 18 transmitted at the same time are detected by a photodetector 26 and sent to a device 24, and the life of the carrier and the mobility of the sample are judged by a decay time while the sample 14 is moved by a shifter 23.

6. 发明专利

JPS59217692A Manufacture of single crystal thin film 失效
标题翻译：单晶薄膜的制造
公开(公告)号：JPS59217692A
公开(公告)日：1984-12-07
申请号：JP9201983
申请日：1983-05-25
申请人： Natl Space Dev Agency Japan , Rikagaku Kenkyusho
发明人： SEGAWA YUUZABUROU , IWAI SOUHACHI , NANBA SUSUMU , SHIBAFUJI YOUJI , MASUDA TSUYOSHI , AKIMOTO TOSHIO
IPC分类号： C30B30/08 , C30B11/00 , C30B19/00 , H01L21/208
CPC分类号： C30B11/00 , C30B29/60
摘要： PURPOSE:To enable the growth of a single crystal thin film having arbitrary shape and size on the surface of a molten liquid, by slowly cooling a molten raw material of crystal in an essentially gravity-free state. CONSTITUTION:The raw material of single crystal is melted in a container, etc. under slight gravity in an essentially gravity-free state, e.g. in a space ship, rocket, etc. An end of the cooling substrate 3 having the same shape as that of the thin film to be manufactured is made to contact with the molten liquid 2 forming a sphere by its own surface tension. The contact point of the molten liquid 2 is cooled, and the growth of the thin film single crystal 4 takes place. Since there is little convection in the molten liquid 2 under the slight gravitational force, the single crystal 4 is grown in the form of a thin film according to the progress of the contact of the cooling substrate 3. When the single crystal 4 is grown to a proper thickness, the cooling substrate 3 is taken out of the molten liquid 2 to obtain the single crystal 4 having a desired shape.
摘要翻译：目的：为了在熔融液体的表面上生长具有任意形状和尺寸的单晶薄膜，通过在基本无重力的状态下缓慢冷却熔融原料的晶体。构成：在基本无重力的状态下，轻微的重力将单晶的原料熔化在容器等中，例如，在空间船，火箭等中。具有与要制造的薄膜相同形状的冷却基板3的端部通过其自身的表面张力与形成球体的熔融液体2接触。熔融液2的接触点被冷却，发生薄膜单晶4的生长。由于在轻微的重力下在熔融液体2中几乎没有对流，所以根据冷却基板3的接触的进展，单晶4以薄膜的形式生长。当将单晶4生长至合适的厚度，将冷却基板3从熔融液2中取出，得到具有所需形状的单晶4。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式