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91. 发明专利

JP2010064930A Method for pulling up silicon single crystal, and doping apparatus used for the same 审中-公开
标题翻译：用于拉伸硅单晶的方法和用于其的掺杂装置
公开(公告)号：JP2010064930A
公开(公告)日：2010-03-25
申请号：JP2008233893
申请日：2008-09-11
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： NAKAO ATSUSHI
IPC分类号： C30B29/06 , C30B15/04
摘要： PROBLEM TO BE SOLVED: To provide a method for pulling up a silicon single crystal which improves an addition efficiency of a dopant and can suppress the variation in the addition amount.
SOLUTION: The method involves using the Chochralski method, and supplying a solid-phase dopant to the surface of a silicon melt M in a quartz glass crucible, and supplying a gas-phase dopant in the silicon melt M in the range of 10 to 50 mm in radius in the surface direction of the melt M from a position where the solid-phase dopant drops on the surface of the melt M, together with argon gas as a carrier gas.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供提高掺杂剂的添加效率的硅单晶的提取方法，能够抑制添加量的变化。解决方案：该方法包括使用Chochralski方法，并在石英玻璃坩埚中向硅熔体M的表面供给固相掺杂剂，并且在硅熔体M的范围内提供气相掺杂剂熔融体M的表面方向的半径相对于熔融体M的表面上的固相掺杂的位置与作为载气的氩气相比，为10〜50mm。版权所有（C）2010，JPO＆INPIT

92. 发明专利

JP2010064173A Electrodeposition drill 审中-公开
标题翻译：电沉积钻
公开(公告)号：JP2010064173A
公开(公告)日：2010-03-25
申请号：JP2008231770
申请日：2008-09-10
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： IWATA MASAHIRO
IPC分类号： B23B51/08 , B23B51/00 , B24D3/06 , B24D7/18
摘要： PROBLEM TO BE SOLVED: To provide an electrodeposition drill allowing a chip of a blade to hardly wear and having long product life in the electrodeposition drill including the blade and a handle (shank) and used for hole processing.
SOLUTION: The electrodeposition drill 1 for boring includes: the handle (shank) 20 attached to a machine main shaft; and the blade 10 having spiral helical grooves 12 formed toward the chip. In the electrodeposition drill, diamond abrasive grains 30 are fixed to the chip of the blade 10 and the chip 10a is formed into an arc-like protrusion shape.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种电沉积钻，其允许刀片的切屑几乎不磨损，并且在包括刀片和手柄（柄）的电沉积钻中具有长的产品寿命并用于孔加工。解决方案：用于钻孔的电沉积钻头1包括：附接到机器主轴的手柄（柄）20; 并且叶片10具有朝向芯片形成的螺旋状的螺旋槽12。在电沉积钻中，将金刚石磨粒30固定在刀片10的芯片上，并将芯片10a形成为弧形突出形状。版权所有（C）2010，JPO＆INPIT

93. 发明专利

JP2010059010A Ceramic junction body for manufacturing semiconductor, and method for manufacturing the same 审中-公开
标题翻译：用于制造半导体的陶瓷接头体及其制造方法
公开(公告)号：JP2010059010A
公开(公告)日：2010-03-18
申请号：JP2008225780
申请日：2008-09-03
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SUGANO AKIRA , ICHINOKURA MASATO
IPC分类号： C04B37/00
摘要： PROBLEM TO BE SOLVED: To provide a ceramic junction body which has a strength in nearly the same level as jointed parts themselves in a joining portion, and holds the joining state even if a faulty part is generated in the vicinity of the joining portion to maintain a function as an integrated member and to enable to be suitably used as a member for manufacturing a semiconductor; and to provide a method for manufacturing the same. SOLUTION: Manufacture of the ceramic junction body in which a second ceramic sintered compact having the same composition as a first ceramic sintered compact is engaged in a recess of the first ceramic sintered compact having the recess to be joined to the first ceramic sintered compact, comprises the slurry preparation step of preparing a slurry in which ceramic particles of ≥5 nm and ≤75 nm in average particle diameter composed of the same composition as the ceramic sintered compact are dispersed, the slurry coating step of coating the slurry on joining surfaces, and the step of engaging the second ceramic sintered compact in the recess of the first ceramic sintered compact and joining the joining surfaces together, and thereafter, sintering the joined sintered compacts at ≥1,500°C and ≤2,000°C to join the joined sintered compacts. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种在接合部分中具有与接合部分本身几乎相同水平的强度的陶瓷接合体，并且即使在接合部附近产生有故障的部分，也保持接合状态以保持作为一体构件的功能，并且能够适合用作制造半导体的构件; 并提供其制造方法。解决方案：陶瓷接合体的制造，其中具有与第一陶瓷烧结体相同组成的第二陶瓷烧结体与具有待接合的第一陶瓷烧结体的第一陶瓷烧结体的凹部接合，包括制备其中分散有与陶瓷烧结体相同组成的平均粒径≥5nm和≤75nm的陶瓷颗粒的浆料的浆料制备步骤，浆料涂布步骤，其在接合时涂布浆料以及将第二陶瓷烧结体接合在第一陶瓷烧结体的凹部中并将接合面接合在一起的步骤，然后在≥1,500℃和≤2,000℃下烧结接合的烧结体，从而将接合烧结体。版权所有（C）2010，JPO＆INPIT

94. 发明专利

JP4431802B2 3-dimensional micro-channel structure 有权
公开(公告)号：JP4431802B2
公开(公告)日：2010-03-17
申请号：JP2003137452
申请日：2003-05-15
申请人：コバレントマテリアル株式会社
发明人：浩之後藤 , 肇須藤
IPC分类号： B81B1/00 , B81C99/00 , C03B11/00 , C03B20/00
CPC分类号： Y02P40/57

95. 发明专利

JP2010046654A Method for producing ceramic particle 审中-公开
标题翻译：生产陶瓷颗粒的方法
公开(公告)号：JP2010046654A
公开(公告)日：2010-03-04
申请号：JP2009067722
申请日：2009-03-19
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SUGINO TOMONORI , UEMOTO HIDEO , GOTO HIROYUKI
IPC分类号： B01J13/00 , B01J20/04 , C01B25/32
摘要： PROBLEM TO BE SOLVED: To provide a ceramic particle the reaction area of which with an eluted liquid can be made larger without forcing the ceramic particle itself to have smaller size and which has excellent monodispersibility. SOLUTION: A method for producing the ceramic particle comprises the steps of: preparing an O/W emulsion by dispersing an oil drop particle (O) consisting of first oil in slurry (W); supplying the prepared O/W emulsion to a first flow passage; supplying an oily solvent containing second oil and an oleophilic surfactant to a second flow passage, which is opposed bi-directionally to the first flow passage at an optional angle and then merged with the first flow passage, to impart shear stress to the O/W emulsion and form a minute liquid droplet in which the oil drop particle is caged; and firing the formed minute liquid droplet. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种陶瓷颗粒，可以使其与洗脱液体的反应面积更大，而不会使陶瓷颗粒本身具有较小的尺寸并且具有优异的单分散性。解决方案：一种制备陶瓷颗粒的方法包括以下步骤：通过将由第一油组成的油滴颗粒（O）分散在浆料（W）中来制备O / W乳液; 将制备的O / W乳液供应到第一流动通道; 将第二油和亲油表面活性剂的油性溶剂供应到第二流动通道，所述第二流动通道以任意角度与所述第一流动通道相对置，然后与所述第一流动通道合并，以向所述O / W 并形成油滴颗粒笼中的微小液滴; 并焙烧形成的微小液滴。版权所有（C）2010，JPO＆INPIT

96. 发明专利

JP4422126B2 Radiant tube and fabric made of heat insulating cylinder ceramic woven to be used to it 有权
公开(公告)号：JP4422126B2
公开(公告)日：2010-02-24
申请号：JP2006214671
申请日：2006-08-07
申请人：コバレントマテリアル株式会社
发明人：一雄太田 , 幸文酒井
IPC分类号： F23C3/00 , F23D14/12

97. 发明专利

JP4413055B2 Silicon single crystal manufacturing method 有权
公开(公告)号：JP4413055B2
公开(公告)日：2010-02-10
申请号：JP2004096365
申请日：2004-03-29
申请人：コバレントマテリアル株式会社
发明人：信下坂
IPC分类号： C30B29/06 , C30B15/22

98. 发明专利

JP4390363B2 Wire saw 有权
公开(公告)号：JP4390363B2
公开(公告)日：2009-12-24
申请号：JP2000153709
申请日：2000-05-24
申请人：コバレントマテリアル株式会社
发明人：一也大久保 , 宏道磯貝 , 弘美長浜
IPC分类号： B24B27/06 , B28D5/04

99. 发明专利

JP4383062B2 Method for producing a porous silicon carbide sintered body 有权
公开(公告)号：JP4383062B2
公开(公告)日：2009-12-16
申请号：JP2003024291
申请日：2003-01-31
申请人：コバレントマテリアル株式会社
发明人：雄史堀内 , 剣輝李 , 茂明黒井
IPC分类号： C04B35/573 , C04B38/00 , C04B41/87 , H01L21/68 , H01L21/683

100. 发明专利

JP4379776B2 Silicon impregnated silicon carbide member 有权
公开(公告)号：JP4379776B2
公开(公告)日：2009-12-09
申请号：JP2003094706
申请日：2003-03-31
申请人：コバレントマテリアル株式会社
发明人：浩昌佐藤 , 厚男北澤 , 卓羽田
IPC分类号： C04B41/91 , C04B41/85 , C04B41/87 , C23C16/42

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