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1. 发明专利

JP2002148011A APPARATUS AND METHOD FOR TREATMENT OF SUBSTRATE 失效
公开(公告)号：JP2002148011A
公开(公告)日：2002-05-22
申请号：JP2000339442
申请日：2000-11-07
申请人： ULVAC CORP
发明人： CHIN YOSHI , OMURA FUMIHIKO , KUBO AKIRA , NAKAMURA SHIZUO
IPC分类号： G01B7/06 , C23C14/54 , C23C16/52 , G01B7/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/66 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a technique by which the film thickness of a thin film formed on the surface of a substrate is measured precisely while the substrate is being conveyed. SOLUTION: A vacuum chamber 50 comprises film thickness sensors 71, 72 which are arranged at the inside of a conveyance chamber 40. Measuring coils 11 are installed inside the sensors 71, 72. When the substrate 5 is conveyed between treatment chambers, the measuring coils 11 are constituted in such a way that the substrate 5 is brought close to the sensors 71, 72 inside the conveyance chamber 40. When an AC voltage is applied to the measuring coils 11, an eddy current is generated in the metal thin film on the surface of the substrate 5. The inductance component of the measuring coils 11 is changed by the eddy current. Its change amount is changed according to the film thickness of the thin film formed on the surface of the substrate 5. When the change amount of the inductance component is found, the film thickness of the thin film formed on the surface of the substrate 5 can be found precisely and quickly. The film thickness of the thin film can be detected while the substrate 5 is being conveyed and before the substrate 5 is shifted to a next treatment.

2. 发明专利

JP2002148010A FILM-THICKNESS MEASURING METHOD 失效
公开(公告)号：JP2002148010A
公开(公告)日：2002-05-22
申请号：JP2000339083
申请日：2000-11-07
申请人： ULVAC CORP
发明人： CHIN YOSHI , OMURA FUMIHIKO , NAKAMURA SHIZUO
IPC分类号： G01B7/06 , G01B7/00
摘要： PROBLEM TO BE SOLVED: To provide a technique by which the film thickness of a conductive thin film on a measuring object can be directly measured with satisfactory accuracy, by a method wherein an eddy current is generated inside the conductive thin film and a change in an inductance component due to the influence of the eddy current is measured. SOLUTION: In a state that a substrate 5 is not brought close to a sensor 7 in which an inductance bridge is arranged, the drift amount Ldrift of a measuring coil constituting the inductance bridge is measured. The substrate 5 is brought close to the sensor 7, and the sum of the drift amount Ldrift of the measuring coil and a change amount ΔL due to the influence of the eddy current is measured. The drift amount Ldrift is eliminated by a subtraction, and the change amount ΔL can be found. By a distance measuring device 9, the distance between the conductive thin film on the surface of the substrate 5 and the measuring coil is measured so as to be collated with a database. The film thickness of the conductive thin film can be found on the basis of the change amount ΔL and the distance.

3. 发明专利

JP2002148012A APPARATUS AND METHOD FOR MEASUREMENT OF FILM THICKNESS 失效
公开(公告)号：JP2002148012A
公开(公告)日：2002-05-22
申请号：JP2000340066
申请日：2000-11-08
申请人： ULVAC CORP
发明人： CHIN YOSHI , NAKAMURA SHIZUO , NANTSU AKIHITO
IPC分类号： G01B7/00 , G01B7/02 , G01B7/06 , G01B11/00 , G01B21/08
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus wherein the film thickness of a conductive thin film formed on a substrate can be measured with satisfactory efficiency and at low costs, by a method wherein the relative distance between an eddy-current coil sensor and the conductive thin film is kept always at a constant value, and the change amount of an inductance in the eddy-current coil sensor is measured always under the same condition. SOLUTION: The film-thickness measuring apparatus is provided with the eddy-current coil sensor 20 which is constituted so as to be capable of being arranged in a prescribed position near the conductive thin film 51, which generates a prescribed eddy current with reference to the film 51, and which detects a magnetic field due to the eddy current; and a laser displacement sensor 30 which is used to measure the displacement between the coil sensor 20 and the film 51. The measuring apparatus is constituted in such a way that the thickness of the film 51 is measured on the basis of the change amount of the inductance in the coil sensor 20 and on the basis of a displacement amount measured by the sensor 30.

4. 发明专利

JP2002141339A VACUUM PROCESSOR AND VACUUM PROCESSING METHOD 失效
公开(公告)号：JP2002141339A
公开(公告)日：2002-05-17
申请号：JP2000338680
申请日：2000-11-07
申请人： ULVAC CORP
发明人： CHIN YOSHI , NAKAMURA SHIZUO
IPC分类号： C23C14/54 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a technique for accurately measuring the thickness of a thin film during formation of the thin film on a substrate. SOLUTION: A sputtering apparatus 10 includes a measuring coil 31 positioned in the vicinity of a substrate 23 and a measuring device 90. As an A.C. current flows through the coil 31, an eddy current is generated on the substrate 23 so that the eddy current causes a change in the inductance component of the coil 31. The amount of such change varies depending on the thickness of a thin film formed on the substrate 23. Thus, by finding the change amount of the inductance component, the thickness of the thin film formed on the substrate 23 can be found more accurately than the prior art.

5. 发明专利

JP2002198334A SUBSTRATE POLISHING APPARATUS 失效
公开(公告)号：JP2002198334A
公开(公告)日：2002-07-12
申请号：JP2000334377
申请日：2000-11-01
申请人： ULVAC CORP
发明人： CHIN YOSHI , ITO ATSUSHI
IPC分类号： B24B37/013 , H01L21/304 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To provide a technique for exactly measuring an amount of polishing of a substrate. SOLUTION: A variation of a component of inductance of a measuring coil 31 due to an effect for an eddy current is measured by bringing the substrate 23 close to the measuring coil 31 during polishing, thereby, producing the eddy current on a metal film on a surface of the substrate 23. Since the variation of the component of inductance is relative to a thickness variation of the metal film on a surface of the substrate 23, the film thickness on a surface of the substrate 23 can be obtained. Thus, a film thickness, i.e., and amount of polishing, can be measured without removing the substrate 23 from a carrier 21, thereby, a polishing process can be simplified.

6. 发明专利

JP2002181507A INDUCTANCE MEASURING INSTRUMENT 失效
公开(公告)号：JP2002181507A
公开(公告)日：2002-06-26
申请号：JP2000383187
申请日：2000-12-18
申请人： ULVAC CORP
发明人： CHIN YOSHI , OMURA FUMIHIKO , NAKAMURA SHIZUO
IPC分类号： G01B7/06 , G01B7/00 , G01R27/26 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide technique capable of easily calculating the thickness of the conductive membrane on a surface. SOLUTION: A film thickness measuring instrument 1 is constituted so that a coil holding part 81 and a circuit holding part 82 are integrated and a measuring coil 11 and a reference coil 12 mutually connected in series are arranged in the coil holding part 81 and resistance elements 14 and 15 mutually connected in series are arranged in the circuit holding part 82. Therefore, the temperature compensation between the measuring coil 11 and the reference coil 12 is performed and measuring accuracy is not lowered by a temperature change. Since the cable 78 connecting the series connection circuit of the measuring coil 11 and the reference coil 12 and the series connection circuit of the resistance elements 14 and 15 can be shortened, the capacity component thereof becomes small and noise becomes hard to get mixed in a measuring signal and the measuring accuracy of film thickness is enhanced.

7. 发明专利

JP2002174502A AXIAL ALIGNER, FILM THICKNESS MEASURING APPARATUS, FILM FORMING APPARATUS, METHOD AND APPARATUS FOR MEASURING FILM THICKNESS 失效
公开(公告)号：JP2002174502A
公开(公告)日：2002-06-21
申请号：JP2000372456
申请日：2000-12-07
申请人： ULVAC CORP
发明人： CHIN YOSHI , OMURA FUMIHIKO , NANTSU AKIHITO , NAKAMURA SHIZUO
IPC分类号： G01B7/06 , G01B7/00 , H01L21/205 , H01L21/66 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To easily obtain a thickness distribution of a conductive thin film formed on a surface. SOLUTION: The invented film thickness measuring apparatus 11 has a lifter 14, a support table 13, a light emitter 151 and a photoreceiver 152. The lifter 14 mounts a wafer 50 on the support table 13 surface with the center of a wafer 50 aligned with the center of the table 13 and obtains the center of the wafer. The light emitter 151 irradiates the peripheral edge of the wafer 50 with a laser beam while spinning the wafer 50 around its center and the laser beam passes through a notch 53 to detect the position of the notch 53. Thus the position of the notch 53 and the center of the wafer 50 are detected to obtain a center axial line on the wafer 50 surface. The coordinates of any position on the wafer 50 water can be determined from the center axial line and the center of the wafer 50 to obtain the thickness of a thin film on the wafer 50 surface at a specified position.

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