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1. 发明专利

JP2000100809A FILM-FORMING METHOD 失效
公开(公告)号：JP2000100809A
公开(公告)日：2000-04-07
申请号：JP28201398
申请日：1998-09-17
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SHIOZAWA JUNICHI , FUNO SAKAE , ISHIHARA KATSUNORI , SAKURAI YOSHINOBU , TSUNASHIMA YOSHITAKA , SAIDA SHIGEHIKO , INUMIYA SEIJI , OZAWA YOSHIO , IKEGAWA HIROAKI , YONEKAWA TSUKASA , SAITO YUKIMASA
IPC分类号： H01L21/316 , C23C16/24 , C23C16/42 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a film forming method for forming an insulating film made of layers continuously in the same film forming apparatus, and keeping good insulation in the insulating film, despite the film being thin. SOLUTION: In this film forming method, an insulating film made up of at least a silicon oxide film and a silicon nitride film is formed. The film forming method includes a silicon oxide film forming step for forming a silicon film by using SiCl4 gas which is included in part in a raw gas in a CVD method, a silicon nitride film forming step for forming a silicon nitride film by using an SiCl4 gas partly in a raw gas in a CVD method. These steps are carried out continuously in the same heat treating apparatus 2. Then, an insulating film made up of layers can be formed continuously in the same film forming apparatus, and moreover, insulating film with extremely satisfactory insulation can be obtained despite the film being thin.

2. 发明专利

JP2001189314A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001189314A
公开(公告)日：2001-07-10
申请号：JP37175699
申请日：1999-12-27
申请人： TOSHIBA MICRO ELECTRONICS , TOSHIBA CORP
发明人： SAKURAI YOSHINOBU , NAKAO TAKASHI , SAIDA SHIGEHIKO
IPC分类号： H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device, with which the nitrogen concentration profile in an oxynitride film can be controlled freely. SOLUTION: In this method, an HTO film is formed on a semiconductor substrate. After gas replacement is made in the reaction tube, the HTO film is nitrided, and, after gas replacement is again made in the reaction tube, reoxidization is performed. Thereafter, third gas replacement is made in the reaction tube. The cycle is repeated until the thickness of the oxynitride film reaches a desired value.

3. 发明专利

JP2000100812A METHOD FOR FORMING SILICON NITRIDE FILM 失效
公开(公告)号：JP2000100812A
公开(公告)日：2000-04-07
申请号：JP28201498
申请日：1998-09-17
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： TSUNASHIMA YOSHITAKA , SAIDA SHIGEHIKO , IMAI MASAYUKI , IKEGAWA HIROAKI , YONEKAWA TSUKASA , YAMAMOTO HIROYUKI
IPC分类号： H01L21/31 , C23C16/42 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a silicon nitride film whose controllability of film thickness is satisfactory, even if the film is thin through the means of a CVD method by providing trichlorosilane (SiCl4) and ammonia (NH3) on the surface of a processed object as raw gases. SOLUTION: N2 gas is supplied into a heat treatment container 8, where a temperature is maintained to that at which a natural oxide film is difficult to adhere. A water board 10 where the multiple stages of wafers W are kept is stored, the inner part of the container 8 is set to a sealed state, N2 gas is discharged, and ammonia (NH3) gas is continuously supplied instead. At processing a success film, tetrachlorosilane (SiCl4) is supplied, in addition to NH3 gas. At this time, it turns into 3SiCl4+4NH3=Si3N4+12HCl by thermal CVD method film forming reaction. Then, a silicon nitride (Si3N4) film is formed. The film is superior in insulating property. In particular leak current is less, the film can be thinned and the characteristic can be improved, when it is used as the insulating film of the capacitor of a semiconductor integrated circuit such as DRAMs.

4. 发明专利

JP2008244490A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008244490A
公开(公告)日：2008-10-09
申请号：JP2008117677
申请日：2008-04-28
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA MASAYUKI , SAIDA SHIGEHIKO , TSUNASHIMA YOSHITAKA
IPC分类号： H01L21/768 , H01L21/316 , H01L21/318 , H01L21/76 , H01L21/8234 , H01L21/8242 , H01L23/522 , H01L27/088 , H01L27/108 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a silicon nitride film which can take selectivity between a silicon oxide film without changing existing coverage. SOLUTION: The method includes steps of forming an interlayer dielectric on a main surface of a semiconductor substrate, a contact hole reaches the main surface of the substrate in the interlayer dielectric, a barrier metal layer having Ti layer and TiN layer in the contact hole where a silicon nitride film has been formed on the side wall, a conductive layer in the contact hole where the barrier metal layer has been formed, and a silicon nitride film containing chlorine in the contact hole on the conductive layer using gas mixture of Si n Cl 2n+2 and NH 3 or Si n Cl 2n-2-x (n is a natural number of 2 or more and x is a natural number of 2n+2 or less) and NH 3 at the film formation temperature of 700°C or less. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有氮化硅膜的半导体器件的方法，其可以在不改变现有覆盖的情况下在氧化硅膜之间取得选择性。解决方案：该方法包括以下步骤：在半导体衬底的主表面上形成层间电介质，接触孔到达层间电介质中的衬底的主表面，具有Ti层和TiN层的阻挡金属层在侧壁上形成氮化硅膜的接触孔，在形成阻挡金属层的接触孔中的导电层和导电层上的接触孔中含有氯的氮化硅膜，使用气体混合物 N 2 S 2 N 2 S 2 N 2 S 2 N 2 S 2 N 2 S 2 N 2 S 2 N 2 S 2 / SB>（n为2以上的自然数，x为2n + 2以下的自然数）和NH 3 的成膜温度为700℃以下。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2007273994A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2007273994A
公开(公告)日：2007-10-18
申请号：JP2007102113
申请日：2007-04-09
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA MASAYUKI , SAIDA SHIGEHIKO , TSUNASHIMA YOSHITAKA
IPC分类号： H01L21/316 , H01L21/28 , H01L21/318 , H01L21/76 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L27/108 , H01L29/423 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which a silicon oxide film exhibiting excellent embedding properties and film properties is formed onto recesses having high aspect ratio. SOLUTION: The semiconductor device includes: an underlying layer region having recesses formed on a main surface side of the semiconductor device, and the silicon oxide film containing chlorine embedded inside the whole recesses of the underlying layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其中在具有高纵横比的凹槽上形成具有优异的嵌入性能和膜性质的氧化硅膜。解决方案：半导体器件包括：具有形成在半导体器件的主表面侧上的凹部的下层区域和包含氯的氧化硅膜，该氧化硅膜嵌入在下层的整个凹部内部。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2010034195A Silicon wafer, and method of manufacturing the same 有权
标题翻译：硅波及其制造方法
公开(公告)号：JP2010034195A
公开(公告)日：2010-02-12
申请号：JP2008193336
申请日：2008-07-28
申请人： Covalent Materials Corp , Toshiba Corp , Toshiba Semiconductor Service & Support Co Ltd , コバレントマテリアル株式会社 , 東芝半導体サービス&サポート株式会社 , 株式会社東芝
发明人： ISOGAI HIROMICHI , SENDA TAKESHI , MURAYAMA KUMIKO , TOYODA EIJI , SENSAI KOJI , ARAKI KOJI , AOKI TATSUHIKO , SAIDA SHIGEHIKO , TSUCHIYA NORIHIKO
IPC分类号： H01L21/322 , H01L21/26
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer the surface portion of which as a device active region includes high stress resistance and further includes crystallinity of high quality, and to provide a method of manufacturing the same.
SOLUTION: An annealed wafer or epitaxial wafer having a DZ (Denuded Zone) layer with reduced grown-in defect and BMD (Bulk Micro Defect) of COPs (Crystal Oriented Particles) etc. is subjected to a rapid temperature raising/falling heat treatment in an oxygen gas atmosphere. Then a silicon wafer is manufactured which includes a concentration distribution of oxygen in solid solution having a maximum value and a minimum value at a predetermined depth from a wafer surface along the thickness as shown by a solid line (a). The maximum value is 1.0×10
17 to 8.0×10
17 atoms/cm
3 at a depth of 0.2 to 2.0 μm from the surface, and the minimum value is 1.0×10
17 atoms/cm
3 to ≤1/5 time as large as the maximum value at a depth of 2.4 to 12 μm from the surface.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供作为器件有源区的表面部分包括高抗应力性的硅晶片，并且还包括高质量的结晶度，并提供其制造方法。解决方案：具有减少的生长缺陷的DZ（剥离区）层和COP（晶体取向颗粒）的BMD（Bulk Micro Defect））的退火晶片或外延晶片经受快速升温/下降在氧气气氛中进行热处理。然后，如实线（a）所示，制造硅晶片，其包括固体溶液中的氧浓度分布，其具有从晶片表面沿着厚度的预定深度处的最大值和最小值。在距表面0.2〜2.0μm的深度处，最大值为1.0×10 17 至8.0×10 17 原子/ cm 3 / SP> 最小值为距表面2.4〜12μm深度的最大值的1.0×10 17 原子/ cm 3 / SP>〜1/5倍。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2004241687A Forming method of trench capacitor and semiconductor device 审中-公开
公开(公告)号：JP2004241687A
公开(公告)日：2004-08-26
申请号：JP2003030795
申请日：2003-02-07
申请人： Toshiba Corp , 株式会社東芝
发明人： SAIDA SHIGEHIKO , MIYANO KIYOTAKA , NAKAO TAKASHI
IPC分类号： H01L27/108 , H01L21/8242 , H01L29/76
CPC分类号： H01L27/10861 , H01L27/10867
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device whose memory holding characteristic does not deteriorate even if a memory cell is fined.
SOLUTION: A trench is formed in the surface of the semiconductor substrate of a first conductivity type. A first insulating film is formed on the inner wall of the trench and a semiconductor pillar is buried in the trench on the first insulating film. The first insulating film and the semiconductor pillar positioned in the upper part of the trench are etched. A second insulating film is deposited on the exposed inner wall of the trench. The semiconductor pillar is etched and the first insulating film is etched. A plate electrode whose conductivity type is different from the first conductivity type is formed in an exposed inner wall of the trench by a gas phase diffusion method. A capacitor insulating film is formed on the plate electrode. A storage electrode is buried in the trench on the capacitor insulating film and the second insulating film.
COPYRIGHT: (C)2004,JPO&NCIPI

8. 发明专利

JPH1174485A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1174485A
公开(公告)日：1999-03-16
申请号：JP16709298
申请日：1998-06-15
申请人： TOSHIBA CORP
发明人： SAIDA SHIGEHIKO , TSUNASHIMA YOSHITAKA
IPC分类号： C23C16/02 , C23C16/34 , H01L21/314 , H01L21/318 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To lessen a leakage current in a capacitor and also to enhance the quality of the capacitor and to make it possible to form the capacitor into a thin film by a method wherein a silicon nitride film is formed on a semiconductor substrate and the density of Si-H bonds being contained per the unit area of this silicon nitride film is set to a specified value or lower. SOLUTION: The upper part of a silicon substrate 1 is cleaned using the mixed solution of a hydrochloric acid with hydrogen peroxide water. The substrate 1 is heat-treated on the condition of a temperature of 900 deg.C and an air pressure of 10 Torr in an ammonia atmosphere and a nitrided natural oxide film layer 3 is formed on the surface of the substrate 1. A 4.0-nm thick silicon nitride film 4, which is used as a capacitor insulating film, is formed on the layer 3 by a reduced CDD method. In the case of the formation of this film 4, the mixed gas of a silicon tetrachloride with ammonia is used as raw gas and an air pressure of 0.5Torr and a temperature of 700 deg.C are used as a film- forming pressure and a film-forming temperature respectively. In such a way, the film 4 of the density of hydrogen of 1×10 cm or lower in per the unit area of the film 4 is formed. After this, an upper electrode is formed to complete-form a capacitor.

9. 发明专利

JPH1041412A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH1041412A
公开(公告)日：1998-02-13
申请号：JP18945296
申请日：1996-07-18
申请人： TOSHIBA CORP
发明人： SAIDA SHIGEHIKO , OZAWA YOSHIO
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/49 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To reduce dispersion in element characteristics due to the dispersion in crystalline particle numbers in a gate electrode by a method wherein the gate electrode is composed of a crystalline material so as to substantially equalize the crystalline particle numbers existenting in the gate electrode. SOLUTION: After the formation of tunnel gate oxide films 105 on a p type silicon substrate 101, amorphous silicon films 106 to be floating electrodes are formed on the tunnel gate pxide films 105. Next, the whole body is heat treated in N2 atmosphere so as to crystallize the silicon films 106. At this time, the crystallization is started from the corner parts 107 formed between an oxide film 104 and the substrate 101. As a result, the dispersion in the number of crystalline particle contained in the amorphous silicon films 106 in the part to be the floating gate electrodes, the number of grain boundaries of amorphous silicon film 106 in that part, and the length of the grain boundry on the surface wherein the tunnel gate oxide films 105 come into contact with the amorphous silicon films 106 to be the floating gate electrodes can be reduced.

10. 发明专利

JP2007281469A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2007281469A
公开(公告)日：2007-10-25
申请号：JP2007097238
申请日：2007-04-03
申请人： Toshiba Corp , 株式会社東芝
发明人： SAIDA SHIGEHIKO , TANAKA MASAYUKI , FUJIWARA MINORU
IPC分类号： H01L21/318 , C23C16/42 , H01L21/314 , H01L21/336 , H01L21/8238 , H01L21/8247 , H01L27/092 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which, even if a nitride film is present near a transistor, enhanced diffusion of arsenic into a silicon dioxide film and enhanced diffusion of arsenic into a silicon substrate can be avoided and also deterioration of a tunnel oxide film will not be caused.
SOLUTION: A silicon nitride film 13 which lacks an Si-H bond can be formed by effecting film-formation at a high temperature using SiH
2 Cl
2 as a raw material gas or using silicon tetrachloride as a raw material gas. Alternatively, an influence of the Si-H bond can be suppressed by performing a high-temperature process after once removing hydrogen in the nitride film by effecting film-formation of the nitride film at a low temperature and then annealing at a higher temperature than the film-formation temperature.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，其中即使在晶体管附近存在氮化物膜，也可以将砷扩散到二氧化硅膜中并增强砷扩散到硅衬底中并且不会引起隧道氧化膜的劣化。解决方案：可以通过使用SiH 2 S 2 SB SB 2将高温下的成膜进行成膜来形成缺少Si-H键的氮化硅膜13作为原料气或以四氯化硅为原料气。或者，通过在低温下进行氮化膜的成膜，然后在比所述氮化物膜高的温度下进行退火，通过在一次除去氮化物膜中的氢之后进行高温处理，可以抑制Si-H键的影响成膜温度。版权所有（C）2008，JPO＆INPIT

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