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1. 发明专利

JP2017115120A 水分散型絶縁皮膜形成用電着液审中-公开
公开(公告)号：JP2017115120A
公开(公告)日：2017-06-29
申请号：JP2016166752
申请日：2016-08-29
申请人：三菱マテリアル株式会社 , Mitsubishi Materials Corp
发明人： ISOMURA JUNKO , IIDA SHINTARO , SAKURAI HIDEAKI
IPC分类号： C09D179/08 , C08K5/17 , C08L79/08 , C09D5/44 , C09D7/12 , C25D13/10
摘要：【課題】保存安定性に優れ、長期保存しても電着液の粘度上昇等が抑えられ、塗膜の乾燥又は焼成時に発泡が生じるのを抑制することができる水分散型絶縁皮膜形成用電着液を提供する。【解決手段】電着液11は、ポリマー粒子、有機溶媒、塩基性化合物及び水を含有し、ポリマー粒子がポリアミドイミドであり、塩基性化合物が水とのHSP距離が35以上の窒素含有化合物である。塩基性化合物はアルキルアミン化合物であることが好ましい。【選択図】図1

2. 发明专利

JP2014189408A METHOD FOR FORMING THIN PNbZT FERROELECTRIC FILM 有权
标题翻译：形成薄膜PNbZT电介质薄膜的方法
公开(公告)号：JP2014189408A
公开(公告)日：2014-10-06
申请号：JP2013063179
申请日：2013-03-26
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： DOI TOSHIHIRO , SAKURAI HIDEAKI , SOYAMA NOBUYUKI
IPC分类号： C01G33/00 , C04B35/491 , H01B3/12 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L41/187 , H01L41/318 , H01L41/319
CPC分类号： B05D3/0254 , B05D1/38 , C23C14/088 , C23C14/5806 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1254 , H01L21/02197 , H01L21/022 , H01L21/02282 , H01L21/02304 , H01L28/56 , Y10T428/26
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a thin PNbZT ferroelectric film capable, by doping Nb into a thin PZT ferroelectric film at a high concentration without co-doping silicon, etc., of greatly improving ferroelectric characteristics such as specific permittivity, etc.SOLUTION: A composition for forming a thin PZT ferroelectric film including no Nb is coated atop a lower electrode 11 formed atop a substrate 10, roasted, and then fired and crystallized so as to form a crystallization-accelerated layer 12 having a thickness of 45-90 nm. A composition for forming a thin PNbZT ferroelectric film including 4-10 atom% of Nb with respect to the sum (100 atom%) of perovskite B site atoms (Zr, Ti) included within the composition is coated atop the crystallization-accelerated layer 12 thus formed so as to form a PNbZT coating film 13a. This coating film 13a is roasted, fired and then crystallized so as to form a thin PNbZT ferroelectric film atop the lower electrode 11.
摘要翻译：要解决的问题：提供一种形成薄的PNbZT铁电体膜的方法，其能够通过以高浓度将Nb掺杂到薄的PZT铁电体膜中而不掺杂硅等，从而大大提高诸如比介电常数的铁电特性，等等。解决方案：用于形成不含Nb的薄PZT铁电体膜的组合物涂覆在形成在基板10顶部的下电极11上，焙烧，然后烧结并结晶，以形成具有厚度的结晶加速层12 45-90nm。相对于组合物中包含的钙钛矿B原子（Zr，Ti）之和（100原子％）的总和（100原子％），包含4-10原子％的Nb的薄PNbZT铁电体膜的组合物被涂覆在结晶加速层12的顶部从而形成PNbZT涂膜13a。将该涂膜13a焙烧，烧成，然后结晶，以在下电极11的上方形成薄的PNbZT铁电体膜。

3. 发明专利

JP2014172778A Composition for forming thin dielectric film, method for forming thin dielectric film, and thin dielectric film formed by this method 有权
标题翻译：用于形成薄介电膜的组合物，形成薄膜的方法和通过该方法形成的薄膜电介质
公开(公告)号：JP2014172778A
公开(公告)日：2014-09-22
申请号：JP2013046245
申请日：2013-03-08
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： SAKURAI HIDEAKI , FUJII JUN
IPC分类号： C01G25/00 , C04B35/491 , H01B3/00 , H01B3/12 , H01G4/12 , H01G4/33
摘要： PROBLEM TO BE SOLVED: To provide a composition for forming a thin PLZT dielectric film capable, at the time of the use thereof as a dielectric layer for a thin film capacitor, etc., of simultaneously improving, among various characteristics specific to the thin film capacitor, the capacitance variation ratio, insulation voltage resistance, and electrostatic capacitance characteristic in a case where the voltage is varied, in particular; a method for forming a thin dielectric film; and a thin dielectric film formed by this method.SOLUTION: In a case where, within an organometallic compound-containing composition for forming a thin PLZT dielectric film, the sum of Zr atoms and Ti atoms included within the composition is defined as 100, the atomic ratio Zr/Ti of Zr atoms and Ti atoms is 55/45-80/20, the sum of Pb atoms and La atoms is 103-115, and the La atoms number in 8-12.
摘要翻译：要解决的问题：提供一种用于形成薄PLZT电介质膜的组合物，其能够在用作薄膜电容器等的电介质层时同时改善薄膜中特有的各种特性特别是在电压变化的情况下，电容器，电容变化率，绝缘电压电阻和静电电容特性; 形成薄电介质膜的方法; 以及通过该方法形成的薄电介质膜。溶解性：在用于形成薄PLZT电介质膜的有机金属化合物的组合物内，包含在组合物内的Zr原子和Ti原子之和定义为100的情况下， Zr原子和Ti原子的原子比Zr / Ti为55 / 45-80 / 20，Pb原子和La原子之和为103-115，La原子数为8-12。

4. 发明专利

JP2014157822A Method of manufacturing ferroelectric thin film 审中-公开
标题翻译：制造薄膜薄膜的方法
公开(公告)号：JP2014157822A
公开(公告)日：2014-08-28
申请号：JP2014042306
申请日：2014-03-05
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： NOGUCHI TAKESHI , SAKURAI HIDEAKI , FUJII JUN , WATANABE TOSHIAKI , SOYAMA NOBUYUKI
IPC分类号： H01B3/12 , C04B35/472 , C04B35/491 , H01B3/00 , H01G4/10 , H01G4/12 , H01G4/33 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L41/08 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/39 , H01L41/43
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric thin film which enables life reliability to be improved.SOLUTION: There is provided the method of manufacturing a ferroelectric thin film having a mixed composite metal oxide form in which a composite metal oxide is mixed with a metal oxide at a specified proportion, where the composite metal oxide is represented by (PbLa)(ZrTi)O(in the formula, 0.9
摘要翻译：要解决的问题：提供一种制造能够提高寿命可靠性的铁电薄膜的制造方法。提供一种制造复合金属氧化物形式的复合金属氧化物形式的铁电薄膜的制造方法，其中复合金属氧化物为以（PbLa）（ZrTi）O（式中，0.9

5. 发明专利

JP2013211328A Pzt ferroelectric thin film and method for manufacturing the same 审中-公开
标题翻译： PZT FERROELECTRIC THIN FILM AND METHOD FOR MANUFACTURING THE SAME
公开(公告)号：JP2013211328A
公开(公告)日：2013-10-10
申请号：JP2012079194
申请日：2012-03-30
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： NOGUCHI TAKESHI , DOI TOSHIHIRO , SAKURAI HIDEAKI , WATANABE TOSHIAKI , SOYAMA NOBUYUKI
IPC分类号： H01L41/39 , C04B35/49 , C04B35/491 , H01G4/10 , H01G4/12 , H01G4/33 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L41/09 , H01L41/18 , H01L41/187
CPC分类号： H01L41/0805 , H01G4/1245 , H01G4/306 , H01G4/33 , H01L41/0815 , H01L41/1876 , H01L41/29 , H01L41/318 , Y10T29/42
摘要： PROBLEM TO BE SOLVED: To provide a PZT ferroelectric thin film capable of having high life reliability, while having dielectric characteristic equivalent to a conventional ferroelectric thin film, and a method for manufacturing the same.SOLUTION: A PZT ferroelectric thin film formed on a bottom electrode of a substrate having the bottom electrode whose crystalline plane is oriented in a (111) axial direction, comprises: an orientation control layer formed on the bottom electrode and having a film thickness whose crystal orientation is preferentially controlled on a (100) face, within a range of 45nm to 150nm; and a film thickness adjustment layer formed on the orientation control layer and having the same crystal orientation as the orientation control layer, and a boundary face is formed between the orientation control layer and the film thickness adjustment layer.
摘要翻译：要解决的问题：提供一种具有高寿命可靠性的PZT铁电薄膜，同时具有与常规铁电薄膜相当的介电特性及其制造方法。解决方案：形成在底部的PZT铁电薄膜具有晶体面取向为（111）轴向的底部电极的基板的电极包括：取向控制层，其形成在所述底部电极上，并且具有优选控制在（100）面上的晶体取向的膜厚度，在45nm至150nm的范围内; 以及形成在取向控制层上并具有与取向控制层相同的晶体取向的膜厚度调节层，并且在取向控制层和膜厚调整层之间形成边界面。

6. 发明专利

JP2013203611A Method for producing ferroelectric thin film 有权
标题翻译：生产薄膜薄膜的方法
公开(公告)号：JP2013203611A
公开(公告)日：2013-10-07
申请号：JP2012075448
申请日：2012-03-29
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： IIDA SHINTARO , SAKURAI HIDEAKI
IPC分类号： C01G25/00 , H01B3/00 , H01B3/12 , H01L21/31 , H01L21/316 , H01L21/8246 , H01L27/105
CPC分类号： H01L21/02104 , B05B5/1608 , B05B5/1675 , B05D1/06 , B05D3/007 , C23C18/1216 , C23C18/1245 , C23C18/1254 , C23C18/127 , C23C18/1279 , C23C18/1283 , H01L41/314 , H01L41/318
摘要： PROBLEM TO BE SOLVED: To obtain a dense and crack-free ferroelectric thin film after firing a thin film ejected and formed using electrostatic spray.SOLUTION: A method for producing a ferroelectric thin film on a lower electrode includes electrostatically spraying a ferroelectric thin film-forming electrostatic spray solution from a spout of a capillary toward a lower electrode of a substrate having the lower electrode so as to coat the electrostatic spray solution on the lower electrode and form a coated film, drying, calcining, and then firing the coated film so as to crystallize the coated film. In this method, the electrostatic spray solution is a mixed solution in which a ferroelectric thin film-forming sol-gel solution and powder having the same composition as the solid content of the sol-gel solution and having a particle diameter that can be ejected from the spout are uniformly mixed, and, when the mass of the metallic compound, which is converted into a mass of a metal oxide, dissolved in the sol-gel solution is represented by A and the mass of the powder is represented by B, the ratio of B with respect to (A+B) is in a range of ≥5% and ≤40%.
摘要翻译：要解决的问题：在烧制使用静电喷涂形成的薄膜之后获得致密且无裂纹的铁电薄膜。解决方案：在下电极上制造铁电薄膜的方法包括静电喷涂铁电薄膜 - 从毛细管的喷口形成静电喷雾溶液到具有下电极的基板的下电极，以便将下电极上的静电喷雾溶液涂覆在其上，形成涂膜，干燥，煅烧，然后焙烧涂膜以使涂膜结晶。在该方法中，静电喷雾溶液是其中形成铁电薄膜的溶胶 - 凝胶溶液和具有与溶胶 - 凝胶溶液的固体成分相同组成并且具有可从喷口均匀混合，当溶解在溶胶 - 凝胶溶液中的转化成金属氧化物的金属化合物的质量由A表示时，粉末的质量用B表示， B相对于（A + B）的比例在≥5％和≤40％的范围内。

7. 发明专利

JP2013188852A Surface-coated cutting tool exhibiting superior chipping resistance, peeling resistance and wearing resistance 有权
标题翻译：表面涂层切割工具展示超高阻抗电阻，耐电流和耐磨损性
公开(公告)号：JP2013188852A
公开(公告)日：2013-09-26
申请号：JP2012058156
申请日：2012-03-15
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： KAKINUMA HIROAKI , TAKAOKA HIDEMITSU , OSADA AKIRA , SAKURAI HIDEAKI , KUROMITSU YOSHIO
IPC分类号： B23B27/14
摘要： PROBLEM TO BE SOLVED: To provide a surface-coated cutting tool having an excellent hard coating layer which exhibits superior chipping resistance, peeling resistance and wearing resistance in high speed intermittent cutting of carbon steel, stainless steel and the like.SOLUTION: There is provided a surface-coated cutting tool in which a substrate layer is formed on the surface of a tool base, and furthermore, the substrate layer is covered with an AlOhard coating layer comprising a lower layer and an upper layer. In the surface-coated cutting tool, the lower layer comprises a crystalline AlOlayer and the upper layer comprises a non-crystalline SiOlayer, the lower layer has recessed parts formed therein, and the non-crystalline SiOlayer of the upper layer is subjected to filling film deposition to fill the recessed parts, an average depth of the recessed parts is 0.5-10.0 μm, an average aspect ratio of the recessed parts is 1.0-40, and an average horizontal spacing between the recessed parts is 0.5-15 μm.
摘要翻译：要解决的问题：提供一种具有优异的硬涂层的表面涂层切削工具，其在碳钢，不锈钢等的高速间歇切削中表现出优异的耐切削性，耐剥离性和耐磨性。解决方案：提供表面涂覆的切削工具，其中在工具基体的表面上形成基底层，此外，基底层被包括下层和上层的AlOhard涂层覆盖。在表面涂覆的切削工具中，下层包含结晶AlO层，上层包含非晶SiO层，下层具有形成在其中的凹部，上层的非晶SiO层经受填充膜沉积以填充凹部，凹部的平均深度为0.5〜10.0μm，凹部的平均纵横比为1.0〜40，凹部的平均水平间隔为0.5〜15μm。

8. 发明专利

JP2013129893A Vapor deposition material for depositing water vapor barrier film, method for depositing water vapor barrier film, and water vapor barrier film deposited by the method 审中-公开
标题翻译：用于沉积水蒸汽障碍膜的蒸气沉积材料，用于沉积水蒸气障碍膜的方法和通过该方法沉积的水蒸气膜膜
公开(公告)号：JP2013129893A
公开(公告)日：2013-07-04
申请号：JP2011281563
申请日：2011-12-22
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： YOSHIDA YUUKI , SAKURAI HIDEAKI
IPC分类号： C23C14/24 , C04B35/00 , C04B35/14 , C04B35/453
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition material for depositing a water-vapor barrier film possessing both colorless transparent property and high water vapor barrier property, to provide a method for depositing the barrier film, and to provide a water vapor barrier film deposited by the method.SOLUTION: The vapor deposition material is a material for depositing a water vapor barrier film comprising a first oxide with a purity of 98% or more and below 100% and a second oxide with a purity of 98% or more and below 100%, wherein the first oxide is WO, the second oxide is at least either ZnO or SiO, and when the mol amounts of the first and second oxides contained are X mol and Y mol, respectively, the compositional ratio satisfies the relation: 0.05≤X mol/(X mol + Y mol) ≤0.95.
摘要翻译：要解决的问题：提供一种沉积具有无色透明性和高水蒸汽阻隔性的水蒸气阻隔膜的蒸镀材料，提供一种沉积阻挡膜的方法，并提供沉积蒸镀材料是用于沉积含有纯度为98％以上且低于100％的第一氧化物和纯度为98％以上且更低的第二氧化物的水蒸气阻隔膜的材料 100％，其中第一氧化物为WO，第二氧化物为至少ZnO或SiO，并且当所含的第一和第二氧化物的摩尔量分别为X mol和Y mol时，组成比满足关系：0.05 ≤Xmol /（X mol + Y mol）≤0.95。

9. 发明专利

JP2012009800A Ferroelectric thin film and thin film capacitor using the same 有权
标题翻译：使用相同的薄膜薄膜和薄膜电容器
公开(公告)号：JP2012009800A
公开(公告)日：2012-01-12
申请号：JP2010220631
申请日：2010-09-30
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： NOGUCHI TAKESHI , SAKURAI HIDEAKI , FUJII JUN , WATANABE TOSHIAKI , SOYAMA NOBUYUKI
IPC分类号： H01G4/33 , C04B35/472 , C04B35/491 , H01G4/10 , H01G4/12 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L41/08 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/39 , H01L41/43
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric thin film capable of improving lifetime reliability, and a thin film capacitor using the ferroelectric thin film.SOLUTION: A ferroelectric thin film is in the form of a mixed composite metal oxide in which a metal oxide is mixed with a composite metal oxide at a specified proportion, where the composite metal oxide is represented by (PbLa)(ZrTi)O(in the formula, 0.9
摘要翻译：要解决的问题：提供能够提高寿命可靠性的铁电薄膜和使用铁电薄膜的薄膜电容器。解决方案：铁电薄膜是混合复合金属氧化物的形式，其中金属氧化物以特定比例与复合金属氧化物混合，其中复合金属氧化物由（Pb y ）（Zr z Ti -z））（在公式中，0.9

10. 发明专利

JP2010208915A Composition and method for forming ferroelectric thin film, and ferroelectric thin film formed by the method 有权
标题翻译：用于形成薄膜的组合物和方法，以及通过该方法形成的富铁薄膜
公开(公告)号：JP2010208915A
公开(公告)日：2010-09-24
申请号：JP2009059019
申请日：2009-03-12
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： FUJII JUN , NOGUCHI TAKESHI , SAKURAI HIDEAKI , SOYAMA NOBUYUKI
IPC分类号： C01G25/00 , C01G23/00 , H01B3/12 , H01G4/12 , H01G4/33 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L41/18 , H01L41/22 , H01L41/23 , H01L41/37 , H01L41/39 , H01L41/43
摘要： PROBLEM TO BE SOLVED: To provide a composition for forming a ferroelectric thin film suitable a high-capacitance density thin film capacitor, which can more largely improve the relative dielectric constant than conventional ferroelectric thin films, by a simple means. SOLUTION: The composition is a liquid composition in which a composite metal oxide A represented by formula (Pb x La y )(Zr z Ti (1-z) )O 3 (wherein 0.9 n H 2n+1 COOH (wherein 3≤n≤7) and capable of assuming a structure of formula (1) when the carboxylic acid B is coordinated to the metal, and comprises the organometal compound solution in which raw materials constituting the oxide A, and the carboxylic acid B is dissolved so as to have in a molar ratio of 0 n H 2n+1 COOH, R1, R2, R3, R4, R5 and R6 denote hydrogen, a methyl group or an ethyl group, M denotes Pb, La, Zr or Ti, and m denotes a valence number of M. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过简单的手段，提供一种适合于高容量密度薄膜电容器的铁电薄膜的组合物，其可以比常规铁电薄膜更大幅度地提高相对介电常数。解决方案：该组合物是一种液体组合物，其中由式（Pb x La y ）表示的复合金属氧化物A（Zr < >其中0.9 H 2n + 1 COOH的n的范围内，R 1，R 2，R 3，R 4，R 5和R 6表示氢，甲基或乙基，M表示Pb，La，Zr或Ti，m表示M的价数。（C）2010，JPO＆INPIT

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