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1. 发明公开

EP3783666A1 CRYSTALLINE SEMICONDUCTOR FILM, SHEET LIKE OBJECT, AND SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP3783666A1
公开(公告)日：2021-02-24
申请号：EP20200067.5
申请日：2015-07-21
申请人： Flosfia Inc.
发明人： Hitora, Toshimi , Oda, Masaya , Takatsuka, Akio
IPC分类号： H01L29/78 , H01L29/808 , H01L29/778 , H01L29/739 , H01L29/812 , H01L29/772 , H01L29/872 , H01L29/24 , H01L29/04 , H01L21/34 , H01L21/20 , H01L27/098 , H01L33/26 , H01L21/02
摘要： A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 µm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

2. 发明公开

EP3174101A4 CRYSTALLINE SEMICONDUCTOR FILM, PLATE-LIKE BODY AND SEMICONDUCTOR DEVICE 无效转让
标题翻译： KRISTALLINE HALBLEITERSCHICHT，PLATTENFÖRMIGERKÖRPER和HALBLEITERBAUELEMENT
公开(公告)号：EP3174101A4
公开(公告)日：2017-06-28
申请号：EP15824091
申请日：2015-07-21
申请人： FLOSFIA INC
发明人： HITORA TOSHIMI , ODA MASAYA , TAKATSUKA AKIO
IPC分类号： H01L29/78 , H01L21/20 , H01L21/34 , H01L27/098 , H01L29/04 , H01L29/24 , H01L29/739 , H01L29/772 , H01L29/778 , H01L29/808 , H01L29/812 , H01L29/872 , H01L33/26
CPC分类号： H01L29/24 , C23C16/40 , C23C16/4415 , C23C16/4481 , H01L21/0242 , H01L21/02565 , H01L21/02573 , H01L21/0262 , H01L21/02628 , H01L29/04 , H01L29/66969 , H01L29/739 , H01L29/7395 , H01L29/7722 , H01L29/778 , H01L29/7787 , H01L29/78 , H01L29/8083 , H01L29/812 , H01L29/8122 , H01L29/872 , H01L29/8725 , H01L33/005 , H01L33/26 , H01L33/44
摘要： A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 µm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.
摘要翻译：提供半导体膜，片状物和半导体器件，其具有抑制的半导体特性，特别是泄漏电流，以及优异的耐电压和散热性。晶体半导体膜或片状物体包含刚玉结构氧化物半导体作为主要成分，其中所述膜具有1μm或更大的膜厚度。特别地，半导体膜或物体包括选自镓，铟和铝中的一种或多种氧化物的半导体成分作为主要成分。半导体器件具有包括半导体膜或物体的半导体结构。

3. 发明公开

EP3054477A4 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：EP3054477A4
公开(公告)日：2016-11-02
申请号：EP14848960
申请日：2014-09-08
申请人： TOYOTA MOTOR CO LTD
发明人： KANECHIKA MASAKAZU , KUWAHARA MAKOTO , UEDA HIROYUKI , TOMITA HIDEMOTO
IPC分类号： H01L21/337 , H01L27/098 , H01L29/06 , H01L29/10 , H01L29/20 , H01L29/34 , H01L29/778
CPC分类号： H01L29/7783 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02579 , H01L29/0646 , H01L29/0684 , H01L29/1066 , H01L29/2003 , H01L29/205 , H01L29/34 , H01L29/66462 , H01L29/7786 , H01L29/7788

4. 发明公开

EP3054477A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：EP3054477A1
公开(公告)日：2016-08-10
申请号：EP14848960.2
申请日：2014-09-08
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： KANECHIKA Masakazu , KUWAHARA Makoto , UEDA Hiroyuki , TOMITA Hidemoto
IPC分类号： H01L21/337 , H01L21/338 , H01L27/098 , H01L29/778 , H01L29/808 , H01L29/812
CPC分类号： H01L29/7783 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02579 , H01L29/0646 , H01L29/0684 , H01L29/1066 , H01L29/2003 , H01L29/205 , H01L29/34 , H01L29/66462 , H01L29/7786 , H01L29/7788
摘要： A semiconductor device includes a first compound semiconductor layer, a second compound semiconductor layer having a larger band gap than that of the first compound semiconductor layer, a p-type third compound semiconductor layer disposed above a portion of the second compound semiconductor layer, a p-type fourth compound semiconductor layer disposed above the third compound semiconductor layer and having a higher resistance than that of the third compound semiconductor layer, and a gate electrode disposed above the fourth compound semiconductor layer.
摘要翻译：一种半导体器件包括：第一化合物半导体层，具有比第一化合物半导体层大的带隙的第二化合物半导体层，设置在第二化合物半导体层的一部分上方的p型第三化合物半导体层，型第四化合物半导体层，设置在第三化合物半导体层上方并具有比第三化合物半导体层高的电阻;以及栅电极，设置在第四化合物半导体层上方。

5. 发明公开

EP2750171A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：碳化硅半导体元件及其制造方法
公开(公告)号：EP2750171A1
公开(公告)日：2014-07-02
申请号：EP12825299.6
申请日：2012-08-10
申请人： DENSO CORPORATION
发明人： TAKEUCHI, Yuichi
IPC分类号： H01L21/337 , H01L21/338 , H01L27/098 , H01L29/06 , H01L29/808 , H01L29/812
摘要： In a silicon carbide semiconductor device, a trench (6) penetrates a source region (4) and a first gate region (3) and reaches a drift layer (2). On an inner wall of the trench (6), a channel layer (7) of a first conductivity-type is formed by epitaxial growth. On the channel layer (7), a second gate region (8) of a second conductivity-type is formed. A first depressed portion (13) is formed at an end portion of the trench (6) to a position deeper than a thickness of the source region (4) so as to remove the source region (4) at the end portion of the trench (6). A corner portion of the first depressed portion (13) is covered by a second conductivity-type layer (16).

6. 发明公开

EP2375451A3 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors 审中-公开
标题翻译：侧沟槽Feldeffektortransistoren在半导体材料中具有宽带隙，它们的制造方法以及与晶体管集成电路
公开(公告)号：EP2375451A3
公开(公告)日：2012-04-18
申请号：EP11173329.1
申请日：2005-11-30
申请人： SS SC IP, LLC
发明人： Sankin, Igor , Casady, Jeffrey. B , Merrett, Joseph N.
IPC分类号： H01L29/423 , H01L29/808 , H01L27/098 , H01L29/812 , H01L29/20 , H01L29/24 , H01L29/47
CPC分类号： H01L29/2003 , H01L27/098 , H01L29/1608 , H01L29/47 , H01L29/808 , H01L29/8122
摘要： A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The junction field effect transistor comprises source, channel, drift, and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift, and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions, can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits com rising the devices are also described.

7. 发明公开

EP2067170A1 HALBLEITERANORDNUNG MIT GEKOPPELTEN SPERRSCHICHT- FELDEFFEKTTRANSISTOREN 审中-公开
标题翻译：耦合结型场效应晶体管功率半导体装置
公开(公告)号：EP2067170A1
公开(公告)日：2009-06-10
申请号：EP07820405.4
申请日：2007-09-20
申请人： SiCED Electronics Development GmbH & Co KG
发明人： FRIEDRICHS, Peter , STEPHANI, Dietrich
IPC分类号： H01L27/098 , H03K17/082 , H01L27/02 , H01L29/808
CPC分类号： H01L27/098 , H01L27/0248 , H01L29/8083 , H03K17/0822 , H03K17/6877
摘要： The invention relates to a semiconductor arrangement, comprising a first depletion layer field effect transistor and a second first depletion layer field effect transistor, wherein each depletion layer field effect transistor comprises a semiconductor body (116) of the one conductor type, which is in contact with a source electrode (S1; S2) and a drain electrode (D) spaced from the same such that between the source electrode and the drain electrode a flow path in created in the semiconductor body, and zones (117, 139, 122; 140, 128, 124) of the other conductor type that is opposite from the one conductor type, wherein the zones are provided in the region of the flow path in the semiconductor body and are in contact with a gate electrode (G1; G2) and form space charge regions controlling the flow path in the semiconductor body (116). The drain electrodes of the two depletion layer field effect transistors are short-circuited, and the source electrode (S1) of the first field effect transistor is short circuited with the gate electrode (G2) of the second depletion layer field effect transistor. The invention further relates to a circuit arrangement comprising this semiconductor arrangement, which has a switch element (104) that is controlled by the potential of the source electrode (S2) of the second depletion layer field effect transistor. The switch element can connect the gate electrode (G1) and the source electrode (S1) of the first depletion layer field effect transistor with a potential difference increasing the space charge regions.

8. 发明公开

EP1656721A4 INTEGRATED ELECTRONIC DISCONNECTING CIRCUITS METHODS, AND SYSTEMS 审中-公开
标题翻译：方法及系统集成电路电子版
公开(公告)号：EP1656721A4
公开(公告)日：2008-05-07
申请号：EP04761154
申请日：2004-08-20
申请人： FULTEC PTY LTD
发明人： HARRIS RICHARD ALLEN , LINEWIH HANDOKO
IPC分类号： H02H9/02 , H01L27/098 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/78 , H01L29/808 , H02H9/04
CPC分类号： H01L29/1095 , H01L27/098 , H01L29/0657 , H01L29/0696 , H01L29/0847 , H01L29/7802 , H01L29/7827 , H01L29/8083
摘要： Merged devices for transient blocking. A pass transistor is placed so that its body potential drives the gate of a depletion-mode JFET-type blocking transistor. Thus a transient which appears on an external terminal is very rapidly propagated to shut off the blocking transistor, before large numbers of carriers can be injected. Preferably a shunt device is also used to drop high potentials which may appear at the same time. This connection can be particularly useful in power or data input terminals.

9. 发明公开

EP0530623A2 SCR Type memory apparatus 失效
标题翻译： Speichergerger von SCR-Typ。
公开(公告)号：EP0530623A2
公开(公告)日：1993-03-10
申请号：EP92114347.5
申请日：1992-08-21
申请人： SONY CORPORATION
发明人： Mogi, Takayuki
IPC分类号： G11C11/414 , H01L27/098
CPC分类号： G11C11/415 , G11C11/4116 , H01L27/1025
摘要： The SCR type memory apparatus of the invention is short in access time, the current values upon reading and writing are easy to set and the construction of a peripheral circuit becomes simple with less power supply voltage limitation. The apparatus comprises a basic cell circuit with a SCR type memory cell (21) including a pair of pnp transistors and a pair of double emitter transistors and a pair of write npn transistors (23) in addition. The collector of each of the write npn transistors is connected to a voltage holding node (22) of the SCR type memory cell (21) and the bases are connected to a word selecting line (UWL).
摘要翻译：本发明的SCR型存储装置的访问时间短，读写时的电流值容易设定，外围电路的构造变得简单，电源电压限制较小。该装置包括具有包括一对pnp晶体管和一对双发射极晶体管和一对写入npn晶体管（23）的SCR型存储单元（21）的基本单元电路。每个写npn晶体管的集电极连接到SCR型存储单元（21）的电压保持节点（22），并且基极连接到字选择线（UWL）。

10. 发明公开

EP4070384A1 A TRANSISTOR DEVICE 有权
公开(公告)号：EP4070384A1
公开(公告)日：2022-10-12
申请号：EP21830472.3
申请日：2021-12-09
申请人： Search for the Next Ltd
发明人： SUMMERLAND, David , LIGHT, Roger , KNIGHT, Luke
IPC分类号： H01L29/808 , H01L29/66 , H01L29/73 , H01L29/735 , H01L27/098

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