发明公开
EP2375451A3 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
审中-公开
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基本信息:
- 专利标题: Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making, and integrated circuits incorporating the transistors
- 专利标题(中):侧沟槽Feldeffektortransistoren在半导体材料中具有宽带隙,它们的制造方法以及与晶体管集成电路
- 申请号:EP11173329.1 申请日:2005-11-30
- 公开(公告)号:EP2375451A3 公开(公告)日:2012-04-18
- 发明人: Sankin, Igor , Casady, Jeffrey. B , Merrett, Joseph N.
- 申请人: SS SC IP, LLC
- 申请人地址: 1401 Livingston Lane Jackson, MS 39213 US
- 专利权人: SS SC IP, LLC
- 当前专利权人: SS SC IP, LLC
- 当前专利权人地址: 1401 Livingston Lane Jackson, MS 39213 US
- 代理机构: Clark, Jane Anne
- 优先权: US999954 20041201
- 主分类号: H01L29/423
- IPC分类号: H01L29/423 ; H01L29/808 ; H01L27/098 ; H01L29/812 ; H01L29/20 ; H01L29/24 ; H01L29/47
摘要:
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The junction field effect transistor comprises source, channel, drift, and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift, and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions, can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits com rising the devices are also described.
公开/授权文献:
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L29/00 | 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件 |
--------H01L29/02 | .按其半导体本体的特征区分的 |
----------H01L29/41 | ..以其形状、相对尺寸或位置为特征的 |
------------H01L29/423 | ...不通有待整流、放大或切换电流的 |