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1. 发明授权

EP2927934B1 Crystalline multilayer structure and semiconductor device 有权
标题翻译：晶体多层结构和半导体器件
公开(公告)号：EP2927934B1
公开(公告)日：2017-07-05
申请号：EP14199082.0
申请日：2014-12-19
申请人： Flosfia Inc.
发明人： Hitora, Toshimi , Oda, Masaya
IPC分类号： H01L29/26 , H01L21/477 , H01L29/66 , H01L29/786 , H01L29/872 , H01L29/04 , H01L21/02 , H01L29/861 , H01L29/24
CPC分类号： H01L29/04 , H01L21/0242 , H01L21/02488 , H01L21/02565 , H01L21/02628 , H01L21/477 , H01L29/24 , H01L29/26 , H01L29/66969 , H01L29/7869 , H01L29/78696 , H01L29/8611 , H01L29/872
摘要： Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 µm or more in a thickness and 80 m©cm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.
摘要翻译：本发明提供一种导电性高的结晶性多层结构体，其含有即使退火（加热）后电阻值也不增加的刚玉结晶的氧化物薄膜。晶体多层结构包括基础衬底和刚性结构的结晶氧化物薄膜，刚玉结构的结晶氧化物薄膜直接设置在基础衬底上或者在其间具有另一层。结晶氧化物薄膜的厚度为1μm以上，电阻率为80μm以下。半导体器件包括晶体多层结构。

2. 发明公开

EP3182464A1 SEMICONDUCTOR DEVICE 无效转让
标题翻译：半导体器件
公开(公告)号：EP3182464A1
公开(公告)日：2017-06-21
申请号：EP16204582.7
申请日：2016-12-16
申请人： Flosfia Inc.
发明人： Oda, Masaya , Tokuda, Rie , Kambara, Hitoshi , Kawara, Katsuaki , Hitora, Toshimi
IPC分类号： H01L29/872 , H01L21/329 , H01L29/24 , H01L29/47 , H01L29/04
CPC分类号： H01L29/47 , H01L21/02414 , H01L21/0242 , H01L21/02565 , H01L21/02576 , H01L21/02581 , H01L21/02628 , H01L29/04 , H01L29/24 , H01L29/41 , H01L29/43 , H01L29/66969 , H01L29/872
摘要： A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.
摘要翻译：提供半导体特性和肖特基特性优异的半导体器件。一种半导体器件包括：半导体层，其包含具有刚玉结构的晶体氧化物半导体作为主要成分; 以及在半导体层上的肖特基电极，其中肖特基电极通过包含元素周期表第4-9族的金属而形成，由此制造半导体特性和肖特基特性优异的半导体装置，而不损害使用半导体的半导体特性由此获得的用于功率器件等的器件。

3. 发明公开

EP2942804A1 Crystalline multilayer structure and semiconductor device 有权
标题翻译： Kristalline mehrschichtige Struktur und Halbleiterbauelement
公开(公告)号：EP2942804A1
公开(公告)日：2015-11-11
申请号：EP14199110.9
申请日：2014-12-19
申请人： Flosfia Inc.
发明人： Hitora, Toshimi , Oda, Masaya , Takatsuka, Akio
IPC分类号： H01L21/02
CPC分类号： H01L29/22 , H01L21/02491 , H01L21/02565 , H01L21/0257 , H01L21/0262 , H01L29/04 , H01L29/1066 , H01L29/24 , H01L29/66666 , H01L29/66734 , H01L29/66969 , H01L29/7722 , H01L29/7786 , H01L29/7813 , H01L29/7828 , H01L29/8083 , H01L29/812 , H01L29/872 , H01L33/26 , H01L33/28 , H01L33/42 , H01L2933/0016
摘要： Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.
摘要翻译：提供具有良好的半导体特性的结晶多层结构。特别地，结晶多层结构具有如下良好的电性能：导电性的可控性良好; 并且垂直传导是可能的。结晶多层结构包括含有单轴取向金属作为主要成分的金属层和直接设置在金属层上的半导体层或其间的另一层并且包含结晶氧化物半导体作为主要成分的金属层。结晶氧化物半导体包含一种或多种选自镓，铟和铝的金属，并且是单轴取向的。

4. 发明公开

EP3783666A1 CRYSTALLINE SEMICONDUCTOR FILM, SHEET LIKE OBJECT, AND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP3783666A1
公开(公告)日：2021-02-24
申请号：EP20200067.5
申请日：2015-07-21
申请人： Flosfia Inc.
发明人： Hitora, Toshimi , Oda, Masaya , Takatsuka, Akio
IPC分类号： H01L29/78 , H01L29/808 , H01L29/778 , H01L29/739 , H01L29/812 , H01L29/772 , H01L29/872 , H01L29/24 , H01L29/04 , H01L21/34 , H01L21/20 , H01L27/098 , H01L33/26 , H01L21/02
摘要： A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 µm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

5. 发明公开

EP3301725A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING SEMICONDUCTOR DEVICE 有权转让
标题翻译：包括半导体器件的半导体器件和半导体系统
公开(公告)号：EP3301725A1
公开(公告)日：2018-04-04
申请号：EP17193970.5
申请日：2017-09-29
申请人： Flosfia Inc.
发明人： Oda, Masaya , Tokuda, Rie , Kambara, Hitoshi , Kawara, Katsuaki , Hitora, Toshimi
IPC分类号： H01L29/872 , H01L29/04 , H01L29/24
摘要： Semiconductor device including a semiconductor layer including a crystalline oxide semiconductor that comprises gallium; and a Schottky electrode that is positioned on the semiconductor layer. The semiconductor layer includes a surface area that is 3 mm 2 or less.
摘要翻译：包括半导体层的半导体器件，所述半导体层包括含镓的晶体氧化物半导体; 以及位于半导体层上的肖特基电极。半导体层包括3mm 2或更小的表面积。

6. 发明公开

EP2942803A1 Crystalline multilayer structure and semiconductor device 有权转让
标题翻译：晶体多层结构和半导体器件
公开(公告)号：EP2942803A1
公开(公告)日：2015-11-11
申请号：EP14199100.0
申请日：2014-12-19
申请人： Flosfia Inc.
发明人： Hitora, Toshimi , Oda, Masaya , Takatsuka, Akio
IPC分类号： H01L21/02
CPC分类号： H01L29/22 , H01L21/0242 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/0257 , H01L21/02581 , H01L29/04 , H01L29/0619 , H01L29/1066 , H01L29/24 , H01L29/66969 , H01L29/7393 , H01L29/7722 , H01L29/7787 , H01L29/78 , H01L29/7813 , H01L29/7828 , H01L29/8083 , H01L29/812 , H01L29/872 , H01L33/26 , H01L33/42 , H01L2933/0016
摘要： Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.
摘要翻译：提供一种具有良好电性能并且可用于半导体器件的晶体多层结构。晶体多层结构包括基础衬底和直接设置在基础衬底上或其间的另一层并且包括刚玉结构氧化物半导体作为主要组分的晶体氧化物半导体薄膜。氧化物半导体包含铟和/或镓作为主要成分。晶体氧化物半导体薄膜包含锗，硅，钛，锆，钒或铌。

7. 发明公开

EP2927934A1 Crystalline multilayer structure and semiconductor device 有权
标题翻译：晶体多层结构和半导体器件
公开(公告)号：EP2927934A1
公开(公告)日：2015-10-07
申请号：EP14199082.0
申请日：2014-12-19
申请人： Flosfia Inc.
发明人： Hitora, Toshimi , Oda, Masaya
IPC分类号： H01L21/02
CPC分类号： H01L29/04 , H01L21/0242 , H01L21/02488 , H01L21/02565 , H01L21/02628 , H01L21/477 , H01L29/24 , H01L29/26 , H01L29/66969 , H01L29/7869 , H01L29/78696 , H01L29/8611 , H01L29/872
摘要： Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 µm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.
摘要翻译：本发明提供一种导电性高的结晶性多层结构体，其含有即使退火（加热）后电阻值也不增加的刚玉结晶的氧化物薄膜。晶体多层结构包括基础衬底和刚性结构的结晶氧化物薄膜，刚玉结构的结晶氧化物薄膜直接设置在基础衬底上或者在其间具有另一层。结晶氧化物薄膜的厚度为1μm以上，电阻率为80mΩcm以下。半导体器件包括晶体多层结构。

8. 发明公开

EP3291284A1 CRYSTALLINE OXIDE SEMICONDUCTOR FILM, CRYSTALLINE OXIDE SEMICONDUCTOR DEVICE, AND CRYSTALLINE OXIDE SEMICONDUCTOR SYSTEM 有权转让
标题翻译：结晶氧化物半导体膜，结晶氧化物半导体装置和结晶氧化物半导体装置
公开(公告)号：EP3291284A1
公开(公告)日：2018-03-07
申请号：EP17188724.3
申请日：2017-08-31
申请人： Flosfia Inc.
发明人： Tokuda, Rie , Oda, Masaya , Hitora, Toshimi
IPC分类号： H01L21/36 , H01L29/24 , H01L29/04 , H01L29/739 , H01L29/778 , H01L29/808 , H01L29/872 , H01L33/02
CPC分类号： H01L29/24 , H01L21/02414 , H01L21/0242 , H01L21/02433 , H01L21/02483 , H01L21/02565 , H01L21/02576 , H01L21/02609 , H01L21/02628 , H01L21/02631 , H01L29/045 , H01L29/66969 , H01L29/739 , H01L29/7787 , H01L29/8083 , H01L29/872 , H01L33/32 , H01L33/42
摘要： In a first aspect of a present inventive subject matter, a crystalline oxide semiconductor film includes a crystalline oxide semiconductor that contains a corundum structure as a major component, a dopant, and an electron mobility that is 30 cm 2 /Vs or more.
摘要翻译：在本发明的第一方面，一种晶体氧化物半导体膜包括含有刚玉结构作为主要组分，掺杂剂和电子迁移率为30cm 2 / Vs或更高的晶体氧化物半导体膜。

9. 发明公开

EP2990503A1 METHOD OF FORMING METAL FILM 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG VON METALLFILMEN
公开(公告)号：EP2990503A1
公开(公告)日：2016-03-02
申请号：EP15182652.6
申请日：2015-08-27
申请人： Flosfia Inc.
发明人： Oda, Masaya , Hitora, Toshimi
IPC分类号： C23C16/18 , C23C16/448
CPC分类号： C30B19/00 , C03C17/10 , C03C2217/253 , C03C2218/112 , C23C16/18 , C23C16/4486 , C30B29/02 , H01L21/288 , H01L29/45
摘要： Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.
摘要翻译：提供一种能够在工业上有利地形成具有优异的粘附性的金属膜和通过使用该方法形成的金属膜的金属膜形成方法。在基材上形成金属膜的方法包括将原料溶液雾化成雾的雾化步骤，其中原料通过将金属溶解或分散在含有氧化剂的有机溶剂中制备，螯合剂，或质子酸; 载气供给工序，向载气供给载气; 使用载气将雾供给到基底上的雾供给步骤; 以及金属膜形成步骤，在基底的一部分或全部表面上形成金属膜，以使雾发生热反应。

10. 发明授权

EP3190608B1 LAMINATED STRUCTURE AND METHOD FOR MANUFACTURING SAME 有权转让
公开(公告)号：EP3190608B1
公开(公告)日：2020-11-25
申请号：EP15837484.3
申请日：2015-08-28
申请人： Flosfia Inc.
发明人： Oda, Masaya , Takatsuka, Akio , Hitora, Toshimi
IPC分类号： H01L21/365 , H01L29/04 , H01L29/24 , H01L29/739 , H01L29/778 , H01L29/78 , H01L29/808 , H01L29/812 , H01L29/872 , H01L33/16 , H01L33/26

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