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1. 发明公开

EP2903032A4 THIN-FILM PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCTION THEREOF 审中-公开
标题翻译：薄膜光伏装置和方法及其制造
公开(公告)号：EP2903032A4
公开(公告)日：2016-06-08
申请号：EP13841155
申请日：2013-09-27
申请人： KANEKA CORP
发明人： MEGURO TOMOMI , YAMAMOTO KENJI
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/0236 , H01L31/0368 , H01L31/0376 , H01L31/0392 , H01L31/06 , H01L31/0745 , H01L31/075 , H01L31/076 , H01L31/077 , H01L31/18
CPC分类号： H01L31/077 , H01L31/022483 , H01L31/02366 , H01L31/03685 , H01L31/03762 , H01L31/03765 , H01L31/03921 , H01L31/0745 , H01L31/0747 , H01L31/075 , H01L31/076 , H01L31/1804 , H01L31/1888 , Y02E10/545 , Y02E10/548

2. 发明公开

EP1189288A4 PHOTOELECTRIC DEVICE 有权
标题翻译：光电管安排
公开(公告)号：EP1189288A4
公开(公告)日：2005-09-21
申请号：EP01908233
申请日：2001-03-02
申请人： NIPPON SHEET GLASS CO LTD , KANEKA CORP
发明人： HIRATA MASAHIRO , OTANI TSUYOSHI , TAWADA YUKO
IPC分类号： H01L31/0216 , H01L31/0236 , H01L31/04 , H01L31/06 , H01L31/075 , H01L31/076 , H01L31/077 , H01L31/052 , G02B1/11
CPC分类号： H01L31/02168 , G02B1/116 , H01L31/02161 , H01L31/0236 , H01L31/02363 , Y02E10/50
摘要： The present invention provides a photoelectric conversion device that improves photoelectric conversion efficiency with the interaction between a transparent substrate with a transparent conductive film, an antireflection film, and a photoelectric conversion unit. The antireflection film contains fine particles having an average particle diameter of 0.01 to 1.0 mu m and has an uneven surface derived from the fine particles. The glass sheet with a transparent conductive film has a light transmittance of 75% or more in the wavelength region of 800 nm to 900 nm. The photoelectric conversion unit includes at least a photoelectric conversion unit including a photoelectric conversion layer having a band gap of 1.85 eV or less.

3. 发明公开

EP0795202A4 METHOD OF MANUFACTURING A MULTILAYER SOLAR CELL 失效
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER MEHRSCHICHT-SOLARZELLE
公开(公告)号：EP0795202A4
公开(公告)日：1998-06-24
申请号：EP95939178
申请日：1995-12-01
申请人： PACIFIC SOLAR PTY LTD
发明人： GREEN MARTIN ANDREW , WENHAM STUART ROSS , SHI ZHENGRONG
IPC分类号： H01L31/04 , H01L29/06 , H01L31/036 , H01L31/076 , H01L31/077 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , H01L31/077 , H01L31/1872 , Y02E10/548 , Y02P70/521
摘要： A semiconductor structure and method of forming the structure, where a supporting substrate or superstrate (12) provides the mechanical strength to support overlying thin active regions. The thin dielectric layer (11) deposited over the substrate or superstrate (12) serves to isolate the deposited layers from the substrate from optical, metallurgical and/or chemical perspectives. A seeding layer (13) is then deposited, the seeding layer being of n-type silicon with appropriate treatments to give the desired large grain size. This layer may be crystallized as it is deposited, or may be deposited in amorphous form and then crystallized with further processing. A stack of alternating polarity layers (14, 15, 16, 17) of amorphous silicon or silicon alloy incorporating n-type or p-type dopants in the alternating layers is then deposited over the seeding layer. Solid phase crystallization is then performed to give the desired grain size of 3 νm or larger which can be achieved by extended heating of the layers at low temperature.
摘要翻译： PCT No.PCT / AU95 / 00812 Sec。 371日期1997年5月29日 102（e）日期1997年5月29日PCT 1995年12月1日PCT PCT。公开号WO96 / 17388 日期1996年6月6日一种形成结构的半导体结构和方法，其中支撑衬底或覆层提供机械强度以支撑覆盖的薄活性区域。沉积在衬底或覆层上的薄介电层用于将沉积的层与衬底与光学，冶金和/或化学透视隔离。然后沉积接种层，通过适当的处理使接种层为n型硅，以得到所需的大晶粒尺寸。该层可以在其沉积时结晶，或者可以非晶形式沉积，然后进一步加工结晶。然后在接合层上沉积在交替层中并入n型或p型掺杂剂的非晶硅或硅合金交替极性层的叠层。然后进行固相结晶，得到3μm或更大的所需晶粒尺寸，这可以通过在低温下延长加热层来实现。

4. 发明公开

EP4354515A1 MASK-LAYER-FREE HYBRID PASSIVATION BACK CONTACT CELL AND FABRICATION METHOD THEREOF 审中-实审
公开(公告)号：EP4354515A1
公开(公告)日：2024-04-17
申请号：EP23161479.3
申请日：2023-03-13
申请人： Golden Solar (Quanzhou) New Energy Technology Co., Ltd.
发明人： Lin Kairui
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/0368 , H01L31/068 , H01L31/0747 , H01L31/077 , H01L31/20
CPC分类号： Y02P70/50 , H01L31/022441 , H01L31/03682 , H01L31/077 , H01L31/202 , H01L31/02167 , H01L31/0747 , H01L31/0682
摘要： The present disclosure pertains to the field of back contact heterojunction cell technologies, and particularly relates to a mask-layer-free hybrid passivation back contact cell and a fabrication method thereof; the method includes: S101: providing a silicon wafer substrate; S102: sequentially forming a first semiconductor layer and a mask layer on a back surface of the silicon wafer substrate, wherein the first semiconductor layer includes a tunneling oxide layer and a first doped polycrystalline layer; S103: performing first etching on the first semiconductor layer on the obtained back surface to form first opening regions W1; S104: forming a textured surface in the first opening region Wi on the back surface by texturing and cleaning; S105: removing the mask layer; S106: forming a second semiconductor layer on the obtained back surface; and S107: performing second etching on a polished region of the obtained back surface. The method according to the present disclosure is a later-texturing method, the second semiconductor layer is directly formed on a surface of the first semiconductor layer, such that the adhesion is higher, a peeling phenomenon is avoided, and production yield and product reliability are higher.

5. 发明授权

EP1650811B1 Stacked photoelectric converter 失效转让
标题翻译：叠层型光电转换
公开(公告)号：EP1650811B1
公开(公告)日：2013-04-03
申请号：EP04747581.9
申请日：2004-07-15
申请人： Kaneka Corporation
发明人： SASAKI, Toshiaki , KOI, Yohei , YAMAMOTO, Kenji , Yoshimi, Masashi , Mitsuru Ichikawa
IPC分类号： H01L31/075 , H01L31/077 , H01L31/076 , H01L31/052
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548

6. 发明公开

EP2242111A4 PROCESS FOR PRODUCING SOLAR BATTERY ELEMENT AND SOLAR BATTERY ELEMENT 审中-公开
标题翻译：太阳能太阳能太阳能太阳能发电机组VERFAHREN ZUR HERSTELLUNG EINES SOLARBATTERIEELEMENTS SOLARBATTERIEELEMENT
公开(公告)号：EP2242111A4
公开(公告)日：2013-01-23
申请号：EP09708095
申请日：2009-02-06
申请人： KYOCERA CORP
发明人： NIIRA KOICHIRO , NISHIMURA TAKEHIRO , ITO NORIKAZU , INABA SHINICHIRO
IPC分类号： H01L31/04 , C23C16/448 , C23C16/50 , H01L21/225 , H01L31/0376 , H01L31/0392 , H01L31/076 , H01L31/077 , H01L31/20
CPC分类号： H01L31/03921 , C23C16/4488 , C23C16/50 , H01L21/2257 , H01L31/03762 , H01L31/076 , H01L31/077 , H01L31/202 , Y02E10/548 , Y02P70/521

7. 发明公开

EP2133924A4 PHOTOELECTRIC CONVERTER AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译： PHOTO电转换器及其制造方法
公开(公告)号：EP2133924A4
公开(公告)日：2011-04-27
申请号：EP07792055
申请日：2007-08-06
申请人： MITSUBISHI HEAVY IND LTD
发明人： NAKANO YOUJI , TAKEUCHI YOSHIAKI , YAMAGUCHI KENGO , YAMAUCHI YASUHIRO
IPC分类号： H01L31/04 , H01L31/0236 , H01L31/052 , H01L31/076 , H01L31/077 , H01L31/18
CPC分类号： H01L31/077 , H01L31/0236 , H01L31/056 , H01L31/076 , H01L31/182 , H01L31/1884 , Y02E10/52 , Y02E10/546 , Y02E10/548 , Y02P70/521

8. 发明公开

EP2352174A4 SILICON THIN FILM SOLAR CELL AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：EP2352174A4
公开(公告)日：2017-11-22
申请号：EP09820556
申请日：2009-10-09
申请人： KANEKA CORP
发明人： YOSHIKAWA KUNTA , ICHIKAWA MITSURU , YAMAMOTO KENJI
IPC分类号： H01L31/076 , H01L31/077 , H01L31/078
CPC分类号： H01L31/076 , H01L31/077 , H01L31/078 , Y02E10/548
摘要： A method for manufacturing a silicon-based thin film solar cell including a crystalline silicon photoelectric conversion unit which contains a p-type layer (4p), a crystalline i-type silicon photoelectric conversion layer (4ic), and an n-type layer (4nc) stacked in this order from the transparent substrate side is provided. On the crystalline i-type silicon photoelectric conversion layer (4ic), there is formed an n-type silicon-based thin film layer (4na) which has an n-type silicon alloy layer having a film thickness of 1-12 nm and is in contact with the crystalline i-type silicon photoelectric conversion layer. Since a strong electric field is generated at the interface between the crystalline i-type silicon photoelectric conversion layer (4ic) and the n-type silicon-based thin film layer (4na), a thin film solar cell having high photoelectric conversion characteristics may be obtained even when the crystalline i-type silicon photoelectric conversion layer (4ic) has many defects near the interface. Consequently, the crystalline i-type silicon photoelectric conversion layer (4ic) may be formed at a high speed, and a highly efficient silicon-based thin film solar cell may be obtained at low cost.

10. 发明公开

EP2251913A3 Method of Manufacturing Silicon-Based Thin Film Photoelectric Converter and Plasma CVD Apparatus Used for Such Method 审中-公开
标题翻译：硅薄膜光电转换装置和用于施加等离子体CVD装置的这种方法的制造方法
公开(公告)号：EP2251913A3
公开(公告)日：2012-02-22
申请号：EP10173539.7
申请日：1998-10-28
申请人： Kaneka Corporation
发明人： Okamoto, Yoshifumi , Yoshimi, Masashi , Yamamoto, Kenji
IPC分类号： H01L31/075 , H01L31/18 , H01L31/20 , H01L31/0368 , H01L31/076 , H01L31/077
CPC分类号： H01L31/076 , H01L31/03685 , H01L31/077 , H01L31/182 , H01L31/206 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10S438/935
摘要： In a method of manufacturing a silicon-based thin film photoelectric converter, a crystalline photoelectric conversion layer included in the photoelectric converter is deposited by plasma CVD under the following conditions: the temperature of the underlying film is at most 550°C; a gas introduced into a plasma reaction chamber has a silane-based gas and a hydrogen gas where the flow rate of the hydrogen gas relative to the silane-based gas is at least 50 times larger; the pressure in the plasma reaction chamber is set to 3Torr; and the deposition speed is 17nm/min in the thickness-wise direction.
摘要翻译：在制造硅基薄膜光电转换装置的方法，包括在所述光电转换体的结晶的光电转换层是通过等离子体CVD在以下条件下沉积：底层电影的温度为至多550℃; 导入的气体成等离子体反应室具有硅烷系气体，并且其中相对于所述基于硅烷的气体的氢气的流速是至少大50倍的氢气; 在等离子体反应室中的压力被设置为3Torr; 和沉积速度是在厚度方向上为17nm /分钟。

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