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1. 发明授权

EP0028924B1 Charged particle beam tube and method of operating the same 失效
标题翻译：充电颗粒管及其操作方法
公开(公告)号：EP0028924B1
公开(公告)日：1985-01-23
申请号：EP80303974.2
申请日：1980-11-06
申请人： CONTROL DATA CORPORATION
发明人： Harte, Kenneth Jeremy , Dougherty, Edward Cecil
IPC分类号： H01J29/46 , H01J31/60 , H01J3/12
CPC分类号： H01J29/46

2. 发明公开

EP0224314A2 Electron beam addressed memory 失效
标题翻译： Durch einen Elektronenstrahl adressierter Speicher。
公开(公告)号：EP0224314A2
公开(公告)日：1987-06-03
申请号：EP86202091.4
申请日：1986-11-25
申请人： PHILIPS ELECTRONICS UK LIMITED , Philips Electronics N.V.
发明人： Smollett, Max , MacDonald, George Leslie
IPC分类号： H01J31/60 , H01J1/30 , H01J29/41 , H01J29/44
CPC分类号： H01J31/60 , H01J1/308 , H01J29/41 , H01J29/44
摘要： An electron beam addressed memory (EBAM) comprising an envelope (10) within which are provided a source of an electron beam, a microcapacitor target (18) and means (24) for receiving, amplifying and detecting a secondary electron beam produced in response to scanning the target (18) by the electron beam in the read mode. In previous designs of EBAMs tungsten filaments or despenser cathodes have been used for producing the electron beam but if these are replaced by a cold semiconductor cathode (12) it is possible to obtain an electron beam of small cross-sectional size, having a high current density and can be switched on and off at frequencies up to at least 30MHz. The means for receiving, amplifying and detecting the secondary electrons produced in the reading operation comprises in the embodiment illustrated an annular microchannel plate electron multiplier (24) disposed about, and coplanarly with, the target (18).
摘要翻译：一种电子束寻址存储器（EBAM），包括一个其中设有电子束源的外壳（10），一个微电容器靶（18）和用于接收，放大和检测响应于在读取模式下用电子束扫描目标（18）。在以前的EBAM设计中，钨丝或脱盐阴极已经被用于制造电子束，但是如果这些被冷的半导体阴极（12）代替，则可以获得具有大电流的小横截面尺寸的电子束密度，并且可以在高达至少30MHz的频率下接通和断开。用于接收，放大和检测在读取操作中产生的二次电子的装置在该实施例中包括设置在目标（18）周围并与其共面的环形微通道板电子倍增器（24）。

3. 发明公开

EP0028924A1 Charged particle beam tube and method of operating the same 失效
标题翻译：带电Teilchenstrahlröhre和方法，其操作。
公开(公告)号：EP0028924A1
公开(公告)日：1981-05-20
申请号：EP80303974.2
申请日：1980-11-06
申请人： CONTROL DATA CORPORATION
发明人： Harte, Kenneth Jeremy , Dougherty, Edward Cecil
IPC分类号： H01J29/46 , H01J31/60 , H01J3/12
CPC分类号： H01J29/46
摘要： An electron beam or other charged particle beam tube (121) of the compound fly's eye type having -many of the features disclosed in U.S. Patent Specification No. 4 142 132, comprises an evacuated housing together with an electron gun (122) or other charged particle beam producing means disposed at one end of the evacuated housing for producing a beam (13) of electrons or other charged particles. A coarse deflector (17a or 17a and 17b), a compound microlens assembly (125), and a fine deflector (124a and 124b) are disposed in the housing in the path of the electron or other charged particle beam (13) for first selecting a lenslet (125) and thereafter finely deflecting an electron or other charged particle beam to a desired spot on a target plane (18). According to the invention the electron or other charged particle beam tube is constructed and operated such that the electron or other charged particle beam (13) is caused to diverge at a small angle of divergence in advance of passing through the coarse deflector (17a or 17a and 17b) by appropriately locating the virtual origin or point source of the charged particle a small distance in advance of the coarse deflector. This divergence causes particle beam spot aberration at the target plane (18) to be minimised.
Beam divergence may be produced by appropriate design of the electron gun means (122) or by providing a condenser lens (123) between the electron gun means and the coarse deflector (17a or 17a and 17b).
The aberration may be further reduced by a dynamic focusing correction potential supplied to the micro lens assembly along with a high voltage energizing potential, with the dynamic focusing correction potential being derived from components of both the coarse deflection potentials and the fine deflection potentials.

4. 发明公开

EP0224314A3 ELECTRON BEAM ADDRESSED MEMORY 失效
标题翻译：电子束寻址记忆
公开(公告)号：EP0224314A3
公开(公告)日：1988-09-07
申请号：EP86202091
申请日：1986-11-25
申请人： PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED , N.V. PHILIPS' GLOEILAMPENFABRIEKEN
发明人： SMOLLETT, MAX , MACDONALD, GEORGE LESLIE
IPC分类号： H01J31/02 , H01J1/308 , H01J29/41 , H01J29/44 , H01J31/60 , H01J1/30
CPC分类号： H01J31/60 , H01J1/308 , H01J29/41 , H01J29/44
摘要： An electron beam addressed memory (EBAM) compris ing an envelope (10) within which are provided a source of an electron beam, a microcapacitor target (18) and means (24) for receiving, amplifying and detecting a secondary electron beam produced in response to scanning the target (18) by the electron beam in the read mode. In previous designs of EBAMs tungsten filaments or despenser cathodes have been used for producing the electron beam but if these are replaced by a cold semiconductor cathode (12) it is possible to obtain an electron beam of small cross-sectional size, having a high current density and can be switched on and off at frequencies up to at least 30MHz. The means for receiving, amplifying and detecting the secondary electrons produced in the reading operation comprises in the embodi ment illustrated an annular microchannel plate electron multiplier (24) disposed about, and coplanarly with, the target (18).

5. 发明授权

EP0111201B1 Scan converter storage tube with a multiple collector storage target, and method of operation 失效
标题翻译：具有多个收集器存储目标的扫描转换器存储管及其操作方法
公开(公告)号：EP0111201B1
公开(公告)日：1987-03-04
申请号：EP83111624.9
申请日：1983-11-21
申请人： Iwatsu Electric Co., Ltd.
发明人： Takefumi, Kato
IPC分类号： H01J29/41 , H01J31/60
CPC分类号： H01J29/41 , H01J31/60

6. 发明公开

EP0111201A1 Scan converter storage tube with a multiple collector storage target, and method of operation 失效
标题翻译：与具有多个收集器的目标和它的操作方法Abtastspeicherröhre。
公开(公告)号：EP0111201A1
公开(公告)日：1984-06-20
申请号：EP83111624.9
申请日：1983-11-21
申请人： Iwatsu Electric Co., Ltd.
发明人： Takefumi, Kato
IPC分类号： H01J29/41 , H01J31/60
CPC分类号： H01J29/41 , H01J31/60
摘要： A scan converter storage tube has a storage target comprising at least two collector electrodes (52, 52') on a storage surface of a storage substrate (50). Each collector electrode has a multiplicity of parallel spaced strips (54, 54') which are electrically interconnected and which are arranged alternately with the strips of the other collector electrode, leaving exposed parts of the storage surface (58) through the spacings therebetween. The establishment of a potential difference between the collector electrodes makes it possible to write information on the storage target at a high rate without necessitating an increase in an erase potential difference between the collector electrodes and the storage surface. The dual collector storage target also allows writing with a zero erase potential difference, dispensing with the erase mode preparatory to writing. There are also disclosed herein storage targets having three and four collector electrodes respectively.

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