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1. 发明公开

EP0224314A2 Electron beam addressed memory 失效
标题翻译： Durch einen Elektronenstrahl adressierter Speicher。
公开(公告)号：EP0224314A2
公开(公告)日：1987-06-03
申请号：EP86202091.4
申请日：1986-11-25
申请人： PHILIPS ELECTRONICS UK LIMITED , Philips Electronics N.V.
发明人： Smollett, Max , MacDonald, George Leslie
IPC分类号： H01J31/60 , H01J1/30 , H01J29/41 , H01J29/44
CPC分类号： H01J31/60 , H01J1/308 , H01J29/41 , H01J29/44
摘要： An electron beam addressed memory (EBAM) comprising an envelope (10) within which are provided a source of an electron beam, a microcapacitor target (18) and means (24) for receiving, amplifying and detecting a secondary electron beam produced in response to scanning the target (18) by the electron beam in the read mode. In previous designs of EBAMs tungsten filaments or despenser cathodes have been used for producing the electron beam but if these are replaced by a cold semiconductor cathode (12) it is possible to obtain an electron beam of small cross-sectional size, having a high current density and can be switched on and off at frequencies up to at least 30MHz. The means for receiving, amplifying and detecting the secondary electrons produced in the reading operation comprises in the embodiment illustrated an annular microchannel plate electron multiplier (24) disposed about, and coplanarly with, the target (18).
摘要翻译：一种电子束寻址存储器（EBAM），包括一个其中设有电子束源的外壳（10），一个微电容器靶（18）和用于接收，放大和检测响应于在读取模式下用电子束扫描目标（18）。在以前的EBAM设计中，钨丝或脱盐阴极已经被用于制造电子束，但是如果这些被冷的半导体阴极（12）代替，则可以获得具有大电流的小横截面尺寸的电子束密度，并且可以在高达至少30MHz的频率下接通和断开。用于接收，放大和检测在读取操作中产生的二次电子的装置在该实施例中包括设置在目标（18）周围并与其共面的环形微通道板电子倍增器（24）。

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