专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP1204993A4 ELECTRON BOMBARDED ACTIVE PIXEL SENSOR 审中-公开
标题翻译：有源像素传感器电子
公开(公告)号：EP1204993A4
公开(公告)日：2003-04-16
申请号：EP00947471
申请日：2000-07-14
申请人： INTEVAC INC , DRAPER LAB CHARLES S
发明人： AEBI VERLE W , BOYLE JOHN JAMES
IPC分类号： H01L27/14 , H01J29/44 , H01J29/45 , H01J31/26 , H01J40/14 , H01L27/146 , H01L31/00 , H01L31/0203 , H01L31/062 , H04N5/225 , H04N5/33
CPC分类号： H01J31/26 , H01L27/14601 , H01L27/14609 , H01L27/1464 , H01L27/14643 , H04N5/33 , H04N5/335
摘要： A low light level system is described wherein electrons, created by images directed to a photocathode (31), directly bombard active pixel sensors. Both the active pixel sensors and the output end of the photocathode are positioned in a vacuum envelop. The electron released from the photocathode (31), are directed to and at the active pixel sensors (32). The output of the active pixel sensor (32) detector may be stored, viewed or displayed at a remote location. Various applications are described including a novel camera.

2. 发明公开

EP0224314A3 ELECTRON BEAM ADDRESSED MEMORY 失效
标题翻译：电子束寻址记忆
公开(公告)号：EP0224314A3
公开(公告)日：1988-09-07
申请号：EP86202091
申请日：1986-11-25
申请人： PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED , N.V. PHILIPS' GLOEILAMPENFABRIEKEN
发明人： SMOLLETT, MAX , MACDONALD, GEORGE LESLIE
IPC分类号： H01J31/02 , H01J1/308 , H01J29/41 , H01J29/44 , H01J31/60 , H01J1/30
CPC分类号： H01J31/60 , H01J1/308 , H01J29/41 , H01J29/44
摘要： An electron beam addressed memory (EBAM) compris ing an envelope (10) within which are provided a source of an electron beam, a microcapacitor target (18) and means (24) for receiving, amplifying and detecting a secondary electron beam produced in response to scanning the target (18) by the electron beam in the read mode. In previous designs of EBAMs tungsten filaments or despenser cathodes have been used for producing the electron beam but if these are replaced by a cold semiconductor cathode (12) it is possible to obtain an electron beam of small cross-sectional size, having a high current density and can be switched on and off at frequencies up to at least 30MHz. The means for receiving, amplifying and detecting the secondary electrons produced in the reading operation comprises in the embodi ment illustrated an annular microchannel plate electron multiplier (24) disposed about, and coplanarly with, the target (18).

3. 发明授权

EP0062553B1 Cible de tube intensificateur d'image et tube intensificateur d'image à sortie vidéo muni d'une telle cible 失效
标题翻译：图像增强器管目标和图像增强管与包含目标的视频输出
公开(公告)号：EP0062553B1
公开(公告)日：1985-01-23
申请号：EP82400460.0
申请日：1982-03-12
申请人： THOMSON-CSF
发明人： Galves, Jean-Pierre , Gibilini, Daniel , Rougeot, Henri
IPC分类号： H01J31/08 , H01J29/44
CPC分类号： H01J29/44 , H01J31/49

4. 发明公开

EP1154457A4 ELECTRON TUBE 有权
标题翻译： ELEKTRONENRÖHRE
公开(公告)号：EP1154457A4
公开(公告)日：2003-01-22
申请号：EP99900652
申请日：1999-01-21
申请人： HAMAMATSU PHOTONICS KK
发明人： SUYAMA MOTOHIRO , KAGEYAMA AKIHIRO , MURAMATSU MASAHARU
IPC分类号： H01J29/92 , H01J31/26 , H01J31/49 , H01J29/44 , H01L27/14
CPC分类号： H01J31/26 , H01J29/92 , H01J31/49 , H01J2229/922 , H01J2231/50068
摘要： In an electron tube (1), a space (S) between the periphery (15b) of a semiconductor device (15) and a stem (11) is filled with an insulating resin (20). Therefore, the insulating resin (20) functions as a reinforcing member even during the assembly of the electron tube (1) under high-temperature condition, thereby preventing a bump (16) from coming off a bump connection part (19). Since the space (S) is only partly closed by the resin (20), the space between the semiconductor device (15) and the stem (11) is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part (15a) at the center of the semiconductor device (15) and the surface (C) of the stem (11), whereby air expanding at high temperature does not damage the electron incidence part (15a) of the back-incidence semiconductor device (15).
摘要翻译：在电子管（1）中，用绝缘树脂（20）填充半导体器件（15）的周边（15b）和芯柱（11）之间的空间（S）。因此，即使在高温条件下组装电子管（1）期间，绝缘树脂（20）也用作加强件，从而防止凸起（16）从凸起连接部分（19）脱落。由于空间（S）仅被树脂（20）部分地封闭，所以半导体器件（15）与芯柱（11）之间的空间确保了通风性。也就是说，在半导体器件（15）的中心处的电子入射部分（15a）和杆（11）的表面（C）之间不形成储气器，由此在高温下膨胀的空气不会损坏电子背入射半导体器件（15）的入射部分（15a）。

5. 发明公开

EP1154457A1 ELECTRON TUBE 有权
标题翻译：电子管
公开(公告)号：EP1154457A1
公开(公告)日：2001-11-14
申请号：EP99900652.1
申请日：1999-01-21
申请人： Hamamatsu Photonics K.K.
发明人： SUYAMA, Motohiro Hamamatsu Photonics K.K. , KAGEYAMA, Akihiro Hamamatsu Photonics K.K. , MURAMATSU, Masaharu Hamamatsu Photonics K.K.
IPC分类号： H01J29/44 , H01J31/26 , H01J31/49 , H01L27/14
CPC分类号： H01J31/26 , H01J29/92 , H01J31/49 , H01J2229/922 , H01J2231/50068
摘要： In an electron tube 1, a space S between a periphery part 15b of a semiconductor device 15 and a stem 11 is filled with an insulating resin 20. The insulating resin 20 functions as a reinforcing member while the electron tube 1 is assembled under high-temperature condition, thereby preventing a bump 16 from coming off a bump connection portion 19. Since the space S is only partly closed by the resin 20, the space between the semiconductor device 15 and the stem 11 is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part 15a at the center of the semiconductor device 15 and the surface C of the stem 11, whereby air expanding at high temperature does not damage the electron incidence part 15a of the back-illuminated semiconductor device 15.
摘要翻译：在电子管1中，半导体器件15的周边部分15b与芯柱11之间的空间S填充有绝缘树脂20.绝缘树脂20用作加强件，而电子管1在高温下组装，从而防止凸块16从凸块连接部19脱落。由于空间S仅部分地被树脂20封闭，所以半导体器件15与杆11之间的空间确保了通风性。也就是说，在半导体器件15的中心处的电子入射部分15a和杆11的表面C之间不形成储气器，由此在高温下膨胀的空气不会损坏背照射的电子入射部分15a 半导体器件15。

6. 发明授权

EP1152448B1 ELECTRON TUBE 有权
标题翻译：电子管
公开(公告)号：EP1152448B1
公开(公告)日：2009-07-15
申请号：EP99901128.1
申请日：1999-01-21
申请人： HAMAMATSU PHOTONICS K.K.
发明人： SUYAMA, Motohiro , KAGEYAMA, Akihiro , MURAMATSU, Masaharu
IPC分类号： H01J29/44 , H01J31/26 , H01J31/49 , H01L27/148
CPC分类号： H01J31/26 , H01J31/49 , H01J2231/50073
摘要： An electron tube (10) is mainly composed of a side tube (12), an input plate (14) having a photocathode (18), a stem (16), and a CCD device (20). The inside of the electron tube (10) is in a high vacuum state. The CCD device (20) is secured to the stem (16), with the back (B) of the CCD device (20) opposed to the photocathode (18). In the CCD device (20), on a semiconductor substrate (64) made of a semiconductor of one conductivity type are formed a buried layer (66), a barrier layer (68), an SiO2 layer (70), a storage electrode layer (72), a transfer electrode layer (74), and a barrier electrode layer (76) in respective predetermined positions. On them, a PSG film (78) is formed over the entire surface (A) to palanarize the surface of the CCD device (20). Further, on the film (78), an SiN film (106) mainly made of SiN is formed over the entire surface (A).

7. 发明公开

EP1152448A4 ELECTRON TUBE 有权
标题翻译：电子管
公开(公告)号：EP1152448A4
公开(公告)日：2006-04-19
申请号：EP99901128
申请日：1999-01-21
申请人： HAMAMATSU PHOTONICS KK
发明人： SUYAMA MOTOHIRO , KAGEYAMA AKIHIRO , MURAMATSU MASAHARU
IPC分类号： H01J31/26 , H01J31/49 , H01J29/44 , H01L27/148
CPC分类号： H01J31/26 , H01J31/49 , H01J2231/50073
摘要： An electron tube (10) is mainly composed of a side tube (12), an input plate (14) having a photocathode (18), a stem (16), and a CCD device (20). The inside of the electron tube (10) is in a high vacuum state. The CCD device (20) is secured to the stem (16), with the back (B) of the CCD device (20) opposed to the photocathode (18). In the CCD device (20), on a semiconductor substrate (64) made of a semiconductor of one conductivity type are formed a buried layer (66), a barrier layer (68), an SiO2 layer (70), a storage electrode layer (72), a transfer electrode layer (74), and a barrier electrode layer (76) in respective predetermined positions. On them, a PSG film (78) is formed over the entire surface (A) to palanarize the surface of the CCD device (20). Further, on the film (78), an SiN film (106) mainly made of SiN is formed over the entire surface (A).

8. 发明公开

EP0062553A1 Cible de tube intensificateur d'image et tube intensificateur d'image à sortie vidéo muni d'une telle cible 失效
标题翻译： TREFF电极对于图像增强管和设有与视频输出，诸如击打电极图象增强管。
公开(公告)号：EP0062553A1
公开(公告)日：1982-10-13
申请号：EP82400460.0
申请日：1982-03-12
申请人： THOMSON-CSF
发明人： Galves, Jean-Pierre , Gibilini, Daniel , Rougeot, Henri
IPC分类号： H01J31/08 , H01J29/44
CPC分类号： H01J29/44 , H01J31/49
摘要： On obtient une cible d'I.I.R., à gain variable, en utilisant une plaquette de fibres optiques dont la face (f 1 ), côté I.I.R., comporte des trous borgnes, contenant deux types de matériaux luminescents en grain (L 1 et L 2 ), de rendements lumineux différents, qui sont séparés par une couche-barrière (14). Le faisceau d'électrons en provenance de la photocathode de l'I.I.R. est soumis à deux tensions d'accélération différentes, la plus faible tension d'accélération assurant l'excitation du seul matériau luminescent de plus faible rendement lumineux et la plus forte tension d'accélération assurant l'excitation du matériau luminescent de plus fort rendement lumineux. Application aux I.I.R. fonctionnant en radiographie et en radioscopie.

9. 发明授权

EP1154457B1 ELECTRON TUBE 有权
标题翻译：电子管
公开(公告)号：EP1154457B1
公开(公告)日：2003-11-26
申请号：EP99900652.1
申请日：1999-01-21
申请人： Hamamatsu Photonics K.K.
发明人： SUYAMA, Motohiro Hamamatsu Photonics K.K. , KAGEYAMA, Akihiro Hamamatsu Photonics K.K. , MURAMATSU, Masaharu Hamamatsu Photonics K.K.
IPC分类号： H01J29/44 , H01J31/26 , H01J31/49 , H01L27/14 , H01J29/92
CPC分类号： H01J31/26 , H01J29/92 , H01J31/49 , H01J2229/922 , H01J2231/50068
摘要： In an electron tube (1), a space (S) between the periphery (15b) of a semiconductor device (15) and a stem (11) is filled with an insulating resin (20). Therefore, the insulating resin (20) functions as a reinforcing member even during the assembly of the electron tube (1) under high-temperature condition, thereby preventing a bump (16) from coming off a bump connection part (19). Since the space (S) is only partly closed by the resin (20), the space between the semiconductor device (15) and the stem (11) is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part (15a) at the center of the semiconductor device (15) and the surface (C) of the stem (11), whereby air expanding at high temperature does not damage the electron incidence part (15a) of the back-incidence semiconductor device (15).

10. 发明公开

EP1152448A1 ELECTRON TUBE 有权
标题翻译： ELEKTRONENSTRAHLRÖHRE
公开(公告)号：EP1152448A1
公开(公告)日：2001-11-07
申请号：EP99901128.1
申请日：1999-01-21
申请人： Hamamatsu Photonics K.K.
发明人： SUYAMA, Motohiro , KAGEYAMA, Akihiro , MURAMATSU, Masaharu
IPC分类号： H01J29/44 , H01J31/26 , H01J31/49 , H01L27/148
CPC分类号： H01J31/26 , H01J31/49 , H01J2231/50073
摘要： An electron tube 10 mainly includes a sleeve 12, an input plate 14 having a photocathode surface 18, a stem 16 and a CCD 20. A vacuum is provided in an interior of the electron tube 10. The CCD 20 is fixed onto the stem such that a rear surface B faces the photocathode surface 18. In the CCD 20, on a single conductive type semiconductor substrate 64, a buried layer 66, a barrier region 68, a SiO 2 layer 70, a storage electrode layer 72, a transmission electrode layer 74, and a barrier electrode layer 76 are formed at their predetermined positions. A PSG film 78 is formed at an entire front surface A over these layers to flatten the surface of the CCD 20. Further, SiN film 106 mainly composed of SiN is formed above the PSG film over the entire front surface A.
摘要翻译：电子管10主要包括套筒12，具有光电阴极表面18的输入板14，杆16和CCD 20.在电子管10的内部设有真空。CCD 20固定在杆上后表面B面对光电阴极表面18.在CCD 20中，在单个导电型半导体衬底64上，埋层66，势垒区68，SiO 2层70，存储电极层72，透射电极层 74和阻挡电极层76形成在其预定位置。在这些层的整个前表面A上形成PSG膜78，以平坦化CCD 20的表面。此外，在整个前表面A上形成主要由SiN构成的SiN膜106在PSG膜之上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式