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1. 发明公开

EP3312869A1 THE GAS-DISCHARGE ELECTRON GUN 审中-公开
标题翻译：放气电子枪
公开(公告)号：EP3312869A1
公开(公告)日：2018-04-25
申请号：EP17186577.7
申请日：2017-08-17
申请人： KEPP EU, SIA
发明人： Kravtsov, Anatoly , Kravtsov, Alexey
IPC分类号： H01J37/305 , C22B9/22 , H01J37/301 , H01J37/077 , C30B13/16 , C30B15/14 , C30B13/22 , C30B15/16
CPC分类号： H01J37/305 , H01J37/077 , H01J37/301 , H01J2237/06366
摘要： The proposed invention relates to electronic technology, more specifically to gas-discharge electron guns for processing applications and can be used for electron beam melting of materials, in particular metals and substances, which melts have metallic properties (hereinafter referred to as metals), their vacuum purification and other thermal processes performed in a vacuum using high-power electron beams.
The goal of the proposed invention is to solve the task of improving the stability of electron-beam guns due to stabilisation of pressure in the gas-discharge volume and reducing the deposition of processed material's vapours onto the gun's elements. The set objective is achieved due to the fact that the gas-ballast chamber reducing the pressure fluctuations in the process chamber affecting pressure in the gas-discharge volume of the electron beam gun is installed between the focusing lenses into the beam guide connecting the anode aperture with the process chamber.
摘要翻译：所提出的发明涉及电子技术，更具体地涉及用于加工应用的气体放电电子枪，并且可用于材料的电子束熔化，特别是具有金属性质的熔体（以下称为金属），它们的材料使用高功率电子束在真空中进行真空净化和其他热处理。所提出的发明的目标是解决由于气体排放体积中的压力稳定化而导致的电子束枪的稳定性的改善以及减少处理材料的蒸汽在喷枪元件上的沉积的任务。设定的目标是通过这样的事实实现的，即气体压载室减小处理室中影响电子束枪的气体排出体积中的压力的压力波动在聚焦透镜之间安装到连接阳极孔的光束导向器中与处理室。

2. 发明公开

EP2243153A4 ZONE MELT RECRYSTALLIZATION FOR INORGANIC FILMS 审中-公开
标题翻译：区熔再结晶的无机膜
公开(公告)号：EP2243153A4
公开(公告)日：2011-08-03
申请号：EP09703951
申请日：2009-01-16
申请人： NANOGRAM CORP
发明人： HIESLMAIR HENRY , MOSSO RONALD J
IPC分类号： H01L21/20 , C30B13/16 , C30B13/18 , C30B13/20 , C30B13/22 , C30B13/24
CPC分类号： C30B13/14 , C30B29/06 , C30B29/08 , C30B29/52

3. 发明授权

EP0436301B1 Crystal-polymer matrix composites 失效转让
标题翻译： Kristall的-Polymermatrixverbundkomponenten。
公开(公告)号：EP0436301B1
公开(公告)日：1995-03-15
申请号：EP90312956.7
申请日：1990-11-28
申请人： BRITISH TECHNOLOGY GROUP LIMITED
发明人： Azoz, Nazar Eesa Naom, The University of Sussex , Kadim, Munteser Mushin, The University of Sussex
IPC分类号： C30B13/00 , G02F1/35 , C30B13/16
CPC分类号： G02F1/3615 , C30B13/00 , C30B29/54
摘要： This invention relates to a method of producing polymer composites comprising a polymeric matrix (Host) in which crystallites of organic and/or inorganic compounds (Guest) are grown in situ. The growth of crystals is achieved by a temperature gradient zone melting technique. The resultant crystals have high crystalline alignment, good transparency and high second harmonic generation activity.

4. 发明公开

EP2971273A1 SAPPHIRE SHEETS AND APPARATUS AND METHOD FOR PRODUCING SAPPHIRE SHEETS WITH ANGLED HEAT SHIELDS 审中-公开
标题翻译： SAPPHIRE板和器件及其制造方法SAPPHIRE板带角度的挡热板
公开(公告)号：EP2971273A1
公开(公告)日：2016-01-20
申请号：EP14764735.8
申请日：2014-03-14
申请人： Saint-Gobain Ceramics&Plastics, Inc.
发明人： OUELLETTE, Marc , COLLINS, Joseph M. , LOCHER, John Walter , MACK, III, Guilford L. , JENNINGS, Abbie M. , BUZNIAK, Jan J. , JONES, Christopher D.
IPC分类号： C30B11/14 , C30B13/16 , C30B29/20
CPC分类号： C30B15/34 , C01F7/02 , C30B29/20 , Y10T117/1044 , Y10T428/2976
摘要： The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness.
摘要翻译：本发明涉及的装置和用于经由边缘定义的胶片送生长（EFG），形成蓝宝石色带方法。此外，本发明涉及具有特征同时生长的蓝宝石色带的多元性：如在间歇同时生长在蓝宝石带之间排尿的低维变性和消除。

5. 发明公开

EP0436301A3 Crystal-polymer matrix composites 失效转让
标题翻译：水晶聚合物基体复合材料
公开(公告)号：EP0436301A3
公开(公告)日：1992-11-25
申请号：EP90312956.7
申请日：1990-11-28
申请人： BRITISH TECHNOLOGY GROUP LIMITED
发明人： Azoz, Nazar Eesa Naom, The University of Sussex , Kadim, Munteser Mushin, The University of Sussex
IPC分类号： C30B13/00 , G02F1/35 , C30B13/16
CPC分类号： G02F1/3615 , C30B13/00 , C30B29/54
摘要： This invention relates to a method of producing polymer composites comprising a polymeric matrix (Host) in which crystallites of organic and/or inorganic compounds (Guest) are grown in situ. The growth of crystals is achieved by a temperature gradient zone melting technique. The resultant crystals have high crystalline alignment, good transparency and high second harmonic generation activity.

6. 发明公开

EP4249649A1 LITHIUM COMPOSITE OXIDE SINGLE CRYSTAL, LITHIUM COMPOSITE OXIDE POLYCRYSTAL, LITHIUM COMPOSITE OXIDE MATERIAL, SOLID ELECTROLYTE MATERIAL, ALL-SOLID-STATE LITHIUM ION SECONDARY BATTERY, AND METHOD FOR PRODUCING SOLID ELECTROLYTE MATERIAL 审中-实审
公开(公告)号：EP4249649A1
公开(公告)日：2023-09-27
申请号：EP21894561.6
申请日：2021-11-12
申请人： National Institute Of Advanced Industrial Science and Technology
发明人： KATAOKA, Kunimitsu , AKIMOTO, Junji
IPC分类号： C30B29/22 , C01G35/00 , C04B35/50 , C30B13/16 , C30B13/28 , H01B1/06 , H01B1/08
摘要： The lithium composite oxide single crystal has a chemical composition represented by Li 7-3x-w-v Ga x La 3 Zr 2-w-v TawNb v O 12 (0.02 ≤ x

7. 发明授权

EP2880205B1 VORRICHTUNG ZUR HERSTELLUNG EINES EINKRISTALLS DURCH KRISTALLISIEREN DES EINKRISTALLS AN EINER SCHMELZENZONE 有权
标题翻译：装置，通过结晶单晶到熔化区而用于生产单晶
公开(公告)号：EP2880205B1
公开(公告)日：2016-10-05
申请号：EP13734717.5
申请日：2013-07-01
申请人： Siltronic AG
发明人： RAMING, Georg , ALTMANNSHOFER, Ludwig
IPC分类号： C30B13/20 , C30B13/30 , C30B13/16
CPC分类号： C30B13/20 , C30B13/16 , C30B13/30 , C30B29/06 , Y10T117/1088

8. 发明公开

EP0436301A2 Crystal-polymer matrix composites 失效转让
标题翻译： Kristall的-Polymermatrixverbundkomponenten。
公开(公告)号：EP0436301A2
公开(公告)日：1991-07-10
申请号：EP90312956.7
申请日：1990-11-28
申请人： BRITISH TECHNOLOGY GROUP LIMITED
发明人： Azoz, Nazar Eesa Naom, The University of Sussex , Kadim, Munteser Mushin, The University of Sussex
IPC分类号： C30B13/00 , G02F1/35 , C30B13/16
CPC分类号： G02F1/3615 , C30B13/00 , C30B29/54
摘要： This invention relates to a method of producing polymer composites comprising a polymeric matrix (Host) in which crystallites of organic and/or inorganic compounds (Guest) are grown in situ. The growth of crystals is achieved by a temperature gradient zone melting technique. The resultant crystals have high crystalline alignment, good transparency and high second harmonic generation activity.
摘要翻译：本发明涉及一种生产聚合物复合材料的方法，其包括聚合物基质（Host），其中有机和/或无机化合物（Guest）的微晶原位生长。晶体生长通过温度梯度区熔化技术实现。所得晶体具有高结晶取向，良好的透明度和高的二次谐波产生活性。

9. 发明公开

EP0128159A4 APPARATUS AND METHOD FOR THERMALLY TREATING A SEMICONDUCTOR SUBSTRATE. 失效
标题翻译：装置和方法用于半导体基板进行热处理。
公开(公告)号：EP0128159A4
公开(公告)日：1987-10-12
申请号：EP83903721
申请日：1983-10-24
申请人： MOTOROLA INC
发明人： GURTLER RICHARD W , LEGGE RONALD N , LESK ISRAEL A
IPC分类号： C30B13/16 , C30B13/22 , C30B13/24 , H01L21/20
CPC分类号： C30B13/24 , C30B13/22 , H01L21/2026 , Y10S117/904 , Y10S117/905 , Y10S148/024
摘要： Apparatus and method are provided for thermally treating a semiconductor substrate. According to the method, the substrate is isothermally heated to an elevated temperature near the thermal treatment temperature and then is further heated to a higher temperature at which the thermal treatment occurs. Following the thermal treatment the substrate is isothermally cooled to a sufficiently low temperature to avoid thermally induced defects.

10. 发明公开

EP0095756A1 Verfahren zum Herstellen polykristalliner Siliciumstäbe 失效
标题翻译： Verfahren zum Herstellen polykristallinerSiliciumstäbe。
公开(公告)号：EP0095756A1
公开(公告)日：1983-12-07
申请号：EP83105283.2
申请日：1983-05-27
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Keller, Wolfgang, Dr. rer. nat. , Ludsteck, Alexander, Dr. rer. nat. , Fenzl, Hans J., Dipl.-Ing.
IPC分类号： C30B15/00 , C30B13/00 , C30B13/16 , C30B29/06 , C01B33/02
CPC分类号： C30B29/06 , C01B33/037 , C30B13/00 , C30B29/605
摘要： Zur Verbesserung des Wirkungsgrades von in der Solartechnik einsetzbaren Siliciums wird billiges im Lichtbogenverfahren gewonnenes Silicium einem Zonenziehprozeß unterzogen, dies geschieht dadurch, daß die Siliciumschmelze in ein horizontal angeordnetes Boot gefüllt und auf eine Arbeitstemperatur abgekühlt wird, die deutlich unterhalb der Schmelztemperatur aber oberhalb eines Wertes liegt, bei dem das Silicium seine Plastizität verliert, daß dann das erstarrte aber noch auf erhöhte Arbeitstemperatur befindliche Silicium in dem Boot einem Zonenschmelzprozeß unterzogen wird, daß schließlich das Silicium auf Zimmertempertur abgekühlt und aus dem Boot entfernt wird.
摘要翻译：为了提高可用于太阳能技术的硅的效率，通过电弧工艺生产的廉价硅经受区域拉制工艺，其通过将熔融硅浇注到水平布置的船中并将其冷却至工作温度其明显低于熔点但高于硅失去其可塑性的值，然后将仍然处于升高的工作温度的固化硅经受在船中的区域熔融过程并最终将硅冷却至室温并从船上取出。

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