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1. 发明公开

EP1900043A4 LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：EP1900043A4
公开(公告)日：2012-03-21
申请号：EP06768113
申请日：2006-07-05
申请人： SHOWA DENKO KK
发明人： TAKEUCHI RYOUICHI , MATSUMURA ATSUSHI , WATANABE TAKASHI
IPC分类号： H01L33/00 , H01L33/30 , H01L27/15 , H01L33/02 , H01L33/42
CPC分类号： H01L33/02 , H01L27/15 , H01L33/0079 , H01L33/145 , H01L33/16 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49107 , Y10S438/936 , H01L2924/00014 , H01L2924/00

2. 发明公开

EP1390970A1 MASKENTECHNIK ZUR PRODUKTION VON HALBLEITER-BAUELEMENTEN, INSBESONDERE EINER BH-LASERDIODE 审中-公开
标题翻译： MASK工艺进行生产半导体元件，尤其是激光二极管文胸
公开(公告)号：EP1390970A1
公开(公告)日：2004-02-25
申请号：EP01969202.9
申请日：2001-07-30
申请人： Infineon Technologies AG
发明人： BORCHERT, Bernd , BAUMEISTER, Horst , GESSNER, Roland , VEUHOFF, Eberhard , WENGER, Gundolf
IPC分类号： H01L21/308 , H01L21/033
CPC分类号： H01L21/0335 , H01L21/3085 , H01S5/2077 , H01S5/2081 , Y10S438/936
摘要： The invention relates to a masking technique for producing a structure for semiconductor components, in particular BH laser diodes, according to which mask material is applied to a sample in a masking step. The technique is characterised in that the etching rate during an etching step (3) is selected in accordance with the composition and/or the nature of the mask material, so that the mask (40) is at least partially dissolved during the etching step (3). This enables the mask to be removed from the semiconductor material and additional layers to be applied in-situ in a simple manner during the production of semiconductor components.

3. 发明公开

EP0317228A3 Epitaxial wafer 失效
标题翻译：外来波浪
公开(公告)号：EP0317228A3
公开(公告)日：1990-05-16
申请号：EP88310712.0
申请日：1988-11-14
申请人： MITSUBISHI KASEI POLYTEC COMPANY , MITSUBISHI KASEI CORPORATION
发明人： Sato, Tadashige , Kobashi, Yasuji
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , F01N3/0842 , F01N11/00 , F01N2550/03 , H01L33/0025 , H01L33/0062 , H01L33/0066 , Y02T10/47 , Y10S438/936
摘要： An epitaxial wafer comprises a single crystalline substrate (1), a p type gallium aluminum arsenide mixed crystalline layer (2) and an n type gallium aluminum arsenide mixed crystalline layer (6) having an indirect transition type band structure. The p type gallium aluminum arsenide mixed crystalline layer (2) consists of a gallium aluminum arsenide mixed crystalline layer (4) having a direct transition type band structure extending about 3 to 10 µm from the pn junction (5) and a gallium aluminum arsenide mixed crystalline layer (3) having an indirect transition type band structure. The aluminum arsenide mixed crystal ratio in the gallium aluminum arsenide layer (2) exponentially and gradually changes in the region between the direct transition type layer and the indirect transition type layer.

4. 发明公开

EP0209523A1 GROWTH OF LATTICE-GRADED EPILAYERS 失效
标题翻译：方法生长外延层，GRID防火。
公开(公告)号：EP0209523A1
公开(公告)日：1987-01-28
申请号：EP85903485.0
申请日：1985-06-20
申请人： Cook, Melvin S.
发明人： Cook, Melvin S.
IPC分类号： C30B25 , H01L21 , H01L31
CPC分类号： C30B25/02 , C30B25/04 , C30B25/18 , C30B29/40 , C30B29/607 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L31/036 , Y10S117/902 , Y10S148/067 , Y10S148/072 , Y10S148/097 , Y10S148/16 , Y10S438/936 , Y10S438/938
摘要： Un procédé permet de faire pousser sur un substrat (71), une couche épithéliale (77) composée d'un matériau semiconducteur appartenant au système des cristaux cubiques. La constante de réseau de la couche épithéliale est échelonnée depuis une constante initiale du réseau adjacent au substrat (71) jusqu'à une constante finale de réseau à la surface de la couche épithéliale (77). On forme des surface de croissance (79) sur le substrat, et on fait pousser la couche épithéliale (77) en modifiant sa constante de réseau depuis la constante initiale de réseau jusqu'à la constante finale de réseau.

5. 发明授权

EP0001375B1 Agencement de diodes luminescentes multicolores intégrées dans un corps semi-conducteur et son procédé de fabrication 失效
标题翻译：集成多光子发光半导体二极管阵列及其制造方法
公开(公告)号：EP0001375B1
公开(公告)日：1981-04-01
申请号：EP78430012.1
申请日：1978-08-25
申请人： International Business Machines Corporation
发明人： Hung, Roland Yen-Mou , Shih, Kwang Kuo
IPC分类号： H01L27/15
CPC分类号： H01L27/153 , H01L33/0025 , H01L2924/0002 , Y10S438/936 , H01L2924/00

6. 发明公开

EP1361601A3 Method for producing a long wavelength indium gallium arsenide nitride (InGaAsN) active region 审中-公开
标题翻译：一种用于生产长波长砷化铟镓氮化物（InGaAsN）有源区的方法
公开(公告)号：EP1361601A3
公开(公告)日：2005-07-27
申请号：EP03001970.7
申请日：2003-01-30
申请人： Agilent Technologies, Inc.
发明人： Bour, David, P. , Takeuchi, Tetsuya , Tandon, Ashish , Chang, Ying-Lan , Tan, Michael, R.T. , Corzine, Scott
IPC分类号： H01L21/205 , C30B29/38 , C30B29/40 , C30B25/02 , H01S5/323 , H01S5/343
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： Several methods for producing an active region (130) for a long wavelength light emitting device (100) are disclosed. In one embodiment, the method comprises placing a substrate (220) in an organometallic vapor phase epitaxy (OMVPE) reactor (210), the substrate (220) for supporting growth of an indium gallium arsenide nitride (InGaAsN) film (132), supplying to the reactor a group-III-V precursor mixture (214) comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor (210) to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2µm is extracted from the dimethylhydrazine and deposited on the substrate (220).

7. 发明公开

EP1361601A2 Method for producing a long wavelength indium gallium arsenide nitride (InGaAsN) active region 审中-公开
标题翻译： Verfahren zur Herstellung eines langwelligen Indium-Gallium-Arsenid-Nitrid（InGaAsN）aktiven Bereichs
公开(公告)号：EP1361601A2
公开(公告)日：2003-11-12
申请号：EP03001970.7
申请日：2003-01-30
申请人： Agilent Technologies, Inc.
发明人： Bour, David, P. , Takeuchi, Tetsuya , Tandon, Ashish , Chang, Ying-Lan , Tan, Michael, R.T. , Corzine, Scott
IPC分类号： H01L21/205 , C30B29/38
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： Several methods for producing an active region (130) for a long wavelength light emitting device (100) are disclosed. In one embodiment, the method comprises placing a substrate (220) in an organometallic vapor phase epitaxy (OMVPE) reactor (210), the substrate (220) for supporting growth of an indium gallium arsenide nitride (InGaAsN) film (132), supplying to the reactor a group-III-V precursor mixture (214) comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor (210) to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2µm is extracted from the dimethylhydrazine and deposited on the substrate (220).
摘要翻译：公开了用于制造用于长波长发光器件（100）的有源区（130）的几种方法。在一个实施例中，该方法包括将衬底（220）放置在有机金属气相外延（OMVPE）反应器（210）中，所述衬底（220）用于支持氮化镓砷化镓（InGaAsN）膜（132）的生长，包括胂，二甲基肼，烷基镓，烷基铟和载气的III-V族前体混合物（214），其中胂和二甲基肼是Ⅴ族前体材料，其中二甲基肼的百分比基本上超过胂的百分比，并将反应器（210）加压至与二氧化肼中的发射长度大于1.2μm的发光相当的氮浓度的压力，并沉积在基板（220）上。

8. 发明公开

EP1263052A2 BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：双极晶体管在不间断电磁场下
公开(公告)号：EP1263052A2
公开(公告)日：2002-12-04
申请号：EP01932237.9
申请日：2001-05-23
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： ASAI, Akira , OHNISHI, Teruhito , TAKAGI, Takeshi
IPC分类号： H01L29/737
CPC分类号： H01L29/66242 , H01L29/1004 , H01L29/36 , H01L29/7378 , Y10S438/936
摘要： A SiGe spacer layer 151, a graded SiGe base layer 152 including boron, and an Si-cap layer 153 are sequentially grown through epitaxial growth over a collector layer 102 on an Si substrate. A second deposited oxide film 112 having a base opening portion 118 and a P+ polysilicon layer 115 that will be made into an emitter connecting electrode filling the base opening portion are formed on the Si-cap layer 153, and an emitter diffusion layer 153a is formed by diffusing phosphorus into the Si-cap layer 153. When the Si-cap layer 153 is grown, by allowing the Si-cap layer 153 to include boron only at the upper part thereof by in-situ doping, the width of a depletion layer 154 is narrowed and a recombination current is reduced, thereby making it possible to improve the linearity of the current characteristics.
摘要翻译：通过在Si衬底上的集电极层102上的外延生长，顺序地生长SiGe间隔层151，包括硼的梯度SiGe基极层152和Si覆盖层153。在Si覆盖层153上形成第二沉积氧化物膜112，该第二沉积氧化物膜112具有基底开口部分118和将形成填充基部开口部分的发射极连接电极的P +多晶硅层115，形成发射极扩散层153a 通过将磷扩散到Si覆盖层153中。当Si覆盖层153生长时，通过原位掺杂使Si覆盖层153仅在其上部包含硼，则耗尽层的宽度 154变窄并且复合电流降低，从而可以提高电流特性的线性。

9. 发明授权

EP0541971B1 A graded bandgap single-crystal emitter heterojunction bipolar transistor 失效
标题翻译： Heteroübergang-Bipolartransistor mit Emitter aus gradiertem Bandabstand-Monokristall
公开(公告)号：EP0541971B1
公开(公告)日：2000-08-02
申请号：EP92117404.1
申请日：1992-10-12
申请人： International Business Machines Corporation
发明人： Crabbe, Emmanuel F. , Harame, David L. , Meyerson, Bernard S. , Patton, Gary , Stork, Johannes M.C.
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/7378 , H01L29/737 , Y10S438/936

10. 发明公开

EP0552561A3 Method of fabricating an ultra-thin active region for high speed semiconductor devices 失效
标题翻译：制造用于高速半导体器件的超薄激活区域的方法
公开(公告)号：EP0552561A3
公开(公告)日：1995-08-02
申请号：EP92311671.9
申请日：1992-12-21
申请人： Hewlett-Packard Company
发明人： Turner, John E. , Kamins, Theodore I. , Scott, Martin P. , Keller, Yvonne H.
IPC分类号： H01L21/331 , H01L21/20 , H01L29/161 , H01L29/73
CPC分类号： H01L29/66242 , H01L21/2205 , H01L21/28525 , H01L21/743 , H01L29/161 , Y10S148/041 , Y10S438/914 , Y10S438/936
摘要： A method of fabricating a semiconductor device (10) to retard diffusion of a dopant from a center active region (14) into adjacent regions. The center active region is epitaxially formed by selectively increasing and decreasing an introduction of diffusion-suppressing material, preferably germanium, into a semiconductor material, preferably silicon, so that a vertical profile of the content of the diffusion-suppressing material is such that outdiffusion of a dopant is minimized. One embodiment of the tailoring is to increase the concentration of the diffusion-suppressing material at both of the opposed sides of a base region of a bipolar transistor, thereby providing concentration peaks at the interfaces of the base region with collector (12) and emitter (14) regions. The concentration of germanium in a Si 1-x Ge x layer is such that the value x is within the range 0.08 to 0.35 and optimally within the range 0.15 to 0.31. The dopant, preferably boron, also has a tailored concentration profile to minimize outdiffusion. A thinner, more highly doped active region is thereby achieved.

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