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1. 发明公开

EP0267941A1 PROCESS FOR PREPARING SINGLE CRYSTAL BINARY METAL OXIDES OF IMPROVED PURITY 失效
标题翻译：用于生产单晶二进制金属氧化物。
公开(公告)号：EP0267941A1
公开(公告)日：1988-05-25
申请号：EP87903492.0
申请日：1987-04-16
申请人： HUGHES AIRCRAFT COMPANY
发明人： PASTOR, Ricardo, C. , GORRE, Luisa, E.
IPC分类号： C30B15 , C30B29
CPC分类号： C30B15/00 , C30B29/30 , C30B29/32 , Y10S117/906 , Y10S117/912
摘要： A method is disclosed for the growth of single crystals of a binary metal oxides of the formula ABO3 where A is an alkali or alkaline earth metal, B is at least one element selected from titanium, niobium and tantalum. A mixture comprising the constituent components of the ABO3 crystal is prepared using a basic oxide or carbonate of A and a stoichiometric excess of an acidic oxide of B. The mixture is heated at an elevated temperature to form a melt and is thereafter exposed to a reactive atmosphere of a mixture of gaseous carbon monoxide and carbon dioxide. Crystal growth from the melt is effected by a top-seeded crystal pulling technique.

2. 发明公开

EP0315156A1 Apparatus for growing crystals 有权转让
标题翻译： Einrichtung zurZüchtungvon Kristallen。
公开(公告)号：EP0315156A1
公开(公告)日：1989-05-10
申请号：EP88118267.9
申请日：1988-11-02
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Ono, Naoki , Kida, Michio , Arai, Yoshiaki , Sahira, Kensho
IPC分类号： C30B15/02
CPC分类号： C30B15/02 , B01J4/001 , Y10S117/90 , Y10S117/912 , Y10T117/1052 , Y10T117/1056
摘要： A crystal growing apparatus includes a crucible (4), a feed pipe (10) and a pulling mechanism. The crucible serves to melt a crystalline material. The feed pipe serves to cause the crystalline material to fall into the crucible to charge the crucible with the crystalline material. The pulling mechanism serves to pull a single-crystal from the molten material in the crucible. A deceleration part (14,15) is provided on the feed pipe for lowering the falling speed of the material into the crucible.
摘要翻译：晶体生长装置包括坩埚（4），进料管（10）和牵引机构。坩埚用于熔化结晶材料。进料管用于使晶体材料落入坩埚中，以使坩埚与晶体材料一起进料。拉动机构用于从坩埚中的熔融材料拉出单晶。在进料管上设有减速部分（14,15），用于降低材料进入坩埚的下落速度。

3. 发明公开

EP0258027A3 Preparation of polysilicon by silane pyrolysis 有权
标题翻译：通过硅烷热解制备多晶硅
公开(公告)号：EP0258027A3
公开(公告)日：1989-02-22
申请号：EP87307464.5
申请日：1987-08-24
申请人： ETHYL CORPORATION
发明人： Gautreaux, Marcelian Francis , Allen, Robert Hall
IPC分类号： C01B33/02
CPC分类号： B01J8/26 , C01B33/027 , C01B33/029 , Y10S117/912 , Y10T428/2991 , Y10T428/2995
摘要： A polysilicon process is disclosed in which the fines which are inherently produced in a fluid bed deposition type operation using silicon seed particles and a silane feed are in effect glued on to the product particles so as to reduce the undesirable effect of the silicon fines. The process comprises operating a fluid bed in two modes. In the first mode, high productivity is favored at the expense of producing fines which are produced by homogeneous decomposition of the silane feed. In the second mode, the fines are in effect glued on to the particles to which they are adhered by means of deposition of a thin layer of silicon. In the second mode, the concentration of the silane in the feed gases is reduced thus favoring hetergeneous deposition of the silicon on the silicon particles in the bed. The process can be operated using a single fluid bed reactor by alternating cycles or in a more continuous manner utilizing two fluid bed reactors, the first reactor being operated at the high productivity rate with the second reactor taking the silicon particles from the first reactor and operated at the gluing on conditions.

4. 发明授权

EP0093569B1 A method of liquid phase epitaxial growth 失效
标题翻译：液相外延生长的方法
公开(公告)号：EP0093569B1
公开(公告)日：1988-11-02
申请号：EP83302358.3
申请日：1983-04-26
申请人： FUJITSU LIMITED
发明人： Isozumi, Shoji , Kusunoki, Toshihiro
IPC分类号： C30B19/12 , C30B29/40
CPC分类号： C30B19/04 , C30B19/12 , C30B29/40 , Y10S117/912

5. 发明公开

EP0258027A2 Preparation of polysilicon by silane pyrolysis 有权
标题翻译： Herstellung von polykristallinem Silizium durch Pyrolyse von Silan。
公开(公告)号：EP0258027A2
公开(公告)日：1988-03-02
申请号：EP87307464.5
申请日：1987-08-24
申请人： ETHYL CORPORATION
发明人： Gautreaux, Marcelian Francis , Allen, Robert Hall
IPC分类号： C01B33/02
CPC分类号： B01J8/26 , C01B33/027 , C01B33/029 , Y10S117/912 , Y10T428/2991 , Y10T428/2995
摘要： A polysilicon process is disclosed in which the fines which are inherently produced in a fluid bed deposition type operation using silicon seed particles and a silane feed are in effect glued on to the product particles so as to reduce the undesirable effect of the silicon fines. The process comprises operating a fluid bed in two modes. In the first mode, high productivity is favored at the expense of producing fines which are produced by homogeneous decomposition of the silane feed. In the second mode, the fines are in effect glued on to the particles to which they are adhered by means of deposition of a thin layer of silicon. In the second mode, the concentration of the silane in the feed gases is reduced thus favoring hetergeneous deposition of the silicon on the silicon particles in the bed. The process can be operated using a single fluid bed reactor by alternating cycles or in a more continuous manner utilizing two fluid bed reactors, the first reactor being operated at the high productivity rate with the second reactor taking the silicon particles from the first reactor and operated at the gluing on conditions.
摘要翻译：公开了一种多晶硅工艺，其中在使用硅种子颗粒和硅烷进料的流化床沉积型操作中固有产生的细粒实际上胶合到产物颗粒上，以便减少硅细粉的不期望的影响。该方法包括以两种模式操作流化床。在第一种模式中，以生产通过硅烷进料的均匀分解产生的细粉为代价，高生产率是有利的。在第二种模式中，通过沉积薄的硅层，细粒实际上胶合到它们所粘附的颗粒上。在第二模式中，进料气体中硅烷的浓度降低，从而有利于硅在床中的硅颗粒上的杂质沉积。该方法可以使用单个流化床反应器通过交替循环或以更连续的方式利用两个流化床反应器来操作，第一反应器以高生产率操作，第二反应器从第一反应器取出硅颗粒并操作在胶合条件下。

6. 发明公开

EP0140239A2 Apparatus and method for growing doped monocrystalline silicon semiconductor crystals using the float zone technique 失效
标题翻译：装置和方法用于生产掺杂的硅半导体单晶而浮区熔化。
公开(公告)号：EP0140239A2
公开(公告)日：1985-05-08
申请号：EP84112182.5
申请日：1984-10-11
申请人： International Business Machines Corporation
发明人： Kim, Kyong Min , Smetana, Pavel , Schwuttke, Gunther Herbert
IPC分类号： C30B13/10
CPC分类号： C30B13/10 , Y10S117/912
摘要： The crystals are grown by locally melting a rod (10) of polycrystalline semiconductor material by means of an inductive heating coil (11) surrounding said rod (10), to form a molten zone (13) and by shifting the molten zone (13) along the axis of said rod (10), thereby converting the polycrystalline semiconductor material to a monocrystalline material. A solid doping rod (22) is moved into said molten zone (13) and toward the center of said rod (10) to add dopant - preferably oxygen and p- and/or n-dopants - thereto, where the added amount of dopant is controlled by the composition and the geometry of said doping rod (22) and by the rate at which it is moved into said molten zone (13). Crystals grown according to the invention are suitable for LSINLSI applications. Using the invention, for example, crystals with a relatively high oxygen content can be grown.
摘要翻译：该晶体通过由感应加热线圈的方式局部地熔化的多晶半导体材料制成的杆（10）中生长（11）围绕所述杆（10）以形成熔融区（13）和通过移动熔融区（13）沿所述杆（10），从而将多晶半导体材料转换为单晶材料的轴线。固体掺杂杆（22）被移动到所述熔融区（13）和朝向所述杆（10）的中心，以添加掺杂剂 - 优选氧和p型和/或n型掺杂剂 - 于此，其中掺杂剂的添加量由该组合物和掺杂所述杆（22）的几何形状和通过在它被移动到所述熔融区（13）的速度来控制。生长gemäß发明晶体适合于LSI / VLSI应用。使用本发明，例如，具有相对高的氧含量的晶体可以生长。

7. 发明公开

EP0093569A1 A method of liquid phase epitaxial growth 失效
标题翻译： Verfahren zurFlüssigphasenepitaxie。
公开(公告)号：EP0093569A1
公开(公告)日：1983-11-09
申请号：EP83302358.3
申请日：1983-04-26
申请人： FUJITSU LIMITED
发明人： Isozumi, Shoji , Kusunoki, Toshihiro
IPC分类号： C30B19/12 , C30B29/40
CPC分类号： C30B19/04 , C30B19/12 , C30B29/40 , Y10S117/912
摘要： In liquid phase epitaxial growth of a compound semiconductor layer on a substrate (6), an unsaturated solution (8) is brought into contact with a solute source crystalline plate (7). The plate (7) dissolves into the solution (8). The solution (8) is then brought into contact with the substrate (6). The crystalline plate (7) has a denser crystal face than that of the substrate (6), and/or the lattice constant of the crystalline plate (7) is different from that of the substrate (6) and hence a quasi-supercooled condition in the solution is created without decrease of the solution temperature so that a compound semiconductor layer is deposited on the substrate (6).
摘要翻译：在基板（6）上的化合物半导体层的液相外延生长中，使不饱和溶液（8）与溶质源晶体板（7）接触。板（7）溶解到溶液（8）中。然后使溶液（8）与基底（6）接触。结晶板（7）具有比基板（6）更密的晶面，和/或晶体板（7）的晶格常数与基板（6）的晶格常数不同，因此准过冷状态在不降低溶液温度的情况下产生溶液，使得化合物半导体层沉积在基板（6）上。

8. 发明授权

EP0258027B1 Preparation of polysilicon by silane pyrolysis 有权
标题翻译：通过硅烷热解制备多晶硅
公开(公告)号：EP0258027B1
公开(公告)日：1992-08-19
申请号：EP87307464.5
申请日：1987-08-24
申请人： ETHYL CORPORATION
发明人： Gautreaux, Marcelian Francis , Allen, Robert Hall
IPC分类号： C01B33/02
CPC分类号： B01J8/26 , C01B33/027 , C01B33/029 , Y10S117/912 , Y10T428/2991 , Y10T428/2995

9. 发明授权

EP0315156B1 Apparatus for growing crystals 有权转让
标题翻译：用于生长水晶的装置
公开(公告)号：EP0315156B1
公开(公告)日：1991-10-16
申请号：EP88118267.9
申请日：1988-11-02
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Ono, Naoki , Kida, Michio , Arai, Yoshiaki , Sahira, Kensho
IPC分类号： C30B15/02
CPC分类号： C30B15/02 , B01J4/001 , Y10S117/90 , Y10S117/912 , Y10T117/1052 , Y10T117/1056

10. 发明公开

EP0340941A1 Method and apparatus for manufacturing silicon single crystals 失效
标题翻译： Verfahren und Vorrichtung zur Herstellung von Silizium-Einkristallen。
公开(公告)号：EP0340941A1
公开(公告)日：1989-11-08
申请号：EP89303919.8
申请日：1989-04-20
申请人： NKK CORPORATION
发明人： Kamio, Hiroshi , Araki, Kenji , Shima, Yoshinobu , Suzuki, Makoto , Kazama, Akira , Horie, Shigetake , Nakahama, Yasumitsu
IPC分类号： C30B15/12 , C30B15/02 , C30B29/06
CPC分类号： C30B29/06 , C30B15/02 , C30B15/12 , C30B15/14 , Y10S117/912 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section (A) and an outer material feeding section (B) to allow said molten silicon to move slowly, and pulling a silicon single crystal (5) from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12°C.
摘要翻译：本发明涉及通过切克劳斯基法制造单晶硅的方法和装置，包括将含有熔融硅的坩埚分成内单晶生长部分（A）和外部材料供给部分（B）以允许所述熔融硅缓慢移动，并从所述单晶生长部分拉出硅单晶（5），同时将硅原料连续供给到所述材料供给部分，其中所述材料供给部分和所述熔融硅的温度保持较高比硅的熔点高至少12℃

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