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1. 发明公开

EP0293865A1 Apparatus and process for growing crystals of semiconductor materials 有权转让
标题翻译： Vorrichtung und Verfahren zurZüchtungvon Kristallen aus Halbleitermaterialien。
公开(公告)号：EP0293865A1
公开(公告)日：1988-12-07
申请号：EP88108790.2
申请日：1988-06-01
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Kida, Michio , Arai, Yoshiaki , Sahira, Kensho
IPC分类号： C30B15/12
CPC分类号： C30B15/12 , Y10S117/90 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a suspector (12) having a peripheral rim, a quartz crucible assembly (14) for receiving the semiconductor material therein. The crucible assembly (14) includes an outer crucible (16) housed in and supported by the suspector (12) and an inner crucible (18) adapted to be so placed within the outer crucible (16) as to define a multi-wall structure. The apparatus also includes at least one fluid passage (18a) for permitting the melted material to flow between the inner (18) and outer crucibles (16) when the multi-wall structure is defined by the inner (18) and outer crucibles (16), a holder for holding the inner crucible (18), a heater (21) disposed so as to surround the suspector (12) for heating the material in the crucible (14) assembly, and a drive mechanism (30) operable to move at least one of the holder and the suspector (12) vertically between a coupled position where the holder is supported by the suspector (12) in such a manner that the inner crucible (18) is so placed within the outer crucible (16) as to define the multi-wall structure and a released position where the holder is disengaged from the suspector (12) in such a manner that the inner crucible is released from the outer crucible (16).
There is also provided a process which may be conveniently carried out in the apparatus described above.
摘要翻译：用于熔化半导体材料并从熔融材料生长半导体晶体的装置包括具有外围边缘的悬臂（12），用于在其中容纳半导体材料的石英坩埚组件（14）。所述坩埚组件（14）包括容纳在所述悬挂器（12）中并由所述悬挂器（12）支撑的外坩埚（16），以及内坩埚（18），其适于放置在所述外坩埚（16）内，以限定多壁结构。该装置还包括至少一个流体通道（18a），用于当多壁结构由内部（18）和外部坩埚（16）限定时允许熔化的材料在内部（18）和外部坩埚（16）之间流动），用于保持内坩埚（18）的保持器，设置成围绕用于加热坩埚（14）组件中的材料的悬架（12）的加热器（21），以及驱动机构（30），其可操作以移动所述保持器和所述悬挂器（12）中的至少一个在所述保持器由所述悬架（12）支撑的联接位置之间垂直地以使得所述内坩埚（18）被放置在所述外坩埚（16）内的方式中至少一个为以限定多壁结构和释放位置，其中保持器以使内坩埚从外坩埚（16）释放的方式与悬臂（12）脱离接合。还提供了可以在上述装置中方便地进行的方法。

2. 发明授权

EP0293865B1 Apparatus and process for growing crystals of semiconductor materials 有权转让
标题翻译：用于生长半导体材料晶体的装置和工艺
公开(公告)号：EP0293865B1
公开(公告)日：1993-03-10
申请号：EP88108790.2
申请日：1988-06-01
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Kida, Michio , Arai, Yoshiaki , Sahira, Kensho
IPC分类号： C30B15/12
CPC分类号： C30B15/12 , Y10S117/90 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068

3. 发明公开

EP0388503A1 Method for pulling single crystals 有权转让
标题翻译： Verfahren zum Ziehen von Einkristallen。
公开(公告)号：EP0388503A1
公开(公告)日：1990-09-26
申请号：EP89108388.3
申请日：1989-05-10
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Ono, Naoki , Kida, Michio , Arai, Yoshiaki , Sahira, Kensho
IPC分类号： C30B15/04 , C30B29/06
CPC分类号： C30B15/04 , C30B15/12 , Y10T117/1052
摘要： In a method for pulling a single crystal, employing a double crucible assembly (6), the dopent concentration of the molten raw material in an inner crucible (11) prior to the pulling, is raised to a value higher than the dopant concentration C of the molten raw material in the inner crucible (11) at the steady state. Furthermore, at the initial stage of the pulling, the raw material having a dopant content ration of no greater than kC is introduced into the outer crucible (10) at a rate greater than the rate of decrease of the molten raw material within the inner crucible (11) during the pulling, to achieve a concentration ratio of dopant between the inner and outer crucibles (11, 10) at a target value. Subsequently, the raw material having kC as the dopant content ratio is introduced into the outer crucible (10), at a rate equal to the rate of decrease of the motlen raw material during the pulling.
摘要翻译：在采用双坩埚组件（6）的拉制单晶的方法中，在拉动之前，在内坩埚（11）中的熔融原料的掺杂浓度升高到高于掺杂剂浓度C的值处于稳定状态的内坩埚（11）中的熔融原料。此外，在拉拔的初始阶段，将具有不大于kC的掺杂剂含量比例的原料以比内坩埚内的熔融原料的降低率更高的速率引入外坩埚（10）（11），以达到目标值的内外坩埚（11,10）之间的掺杂剂的浓度比。随后，将具有作为掺杂剂含量比的kC的原料以与牵引期间的原始原料的减少速率相同的速率被引入外坩埚（10）。

4. 发明公开

EP0283903A3 Method of manufacturing quartz double crucible and method of manufacturing a silicon monocrystalline rod 有权转让
标题翻译：制造石英双坩埚的方法和制造硅单晶棒的方法
公开(公告)号：EP0283903A3
公开(公告)日：1989-06-07
申请号：EP88104091.9
申请日：1988-03-15
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Kida, Michio , Sahira, Kensho
IPC分类号： C30B15/12
CPC分类号： C03B23/207 , C30B15/12
摘要： A quartz double crucible utilized for producing silicon crystalline rods is manufactured as follows. First, outer and inner crucible members each made of quartz are prepared. Then, the inner crucible member is received in the outer crucible member, and both the inner and outer crucible members are placed in a susceptor made of graphite. Subsequently, the crucible members are heated to a temperature of about 1350°C to about 1650°C. Thus, the outer and inner crucible members are joined together, and a double crucible is produced.
摘要翻译：用于生产硅晶棒的石英双坩埚如下制造。首先，制备每个由石英制成的外坩埚构件和内坩埚构件。然后，将内坩埚构件容纳在外坩埚构件中，并将内坩埚构件和外坩埚构件都放置在由石墨制成的基座中。随后，将坩埚构件加热至约1350℃至约1650℃的温度。因此，外坩埚和内坩埚构件被接合在一起，并且产生双坩埚。

5. 发明公开

EP0315156A1 Apparatus for growing crystals 有权转让
标题翻译： Einrichtung zurZüchtungvon Kristallen。
公开(公告)号：EP0315156A1
公开(公告)日：1989-05-10
申请号：EP88118267.9
申请日：1988-11-02
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Ono, Naoki , Kida, Michio , Arai, Yoshiaki , Sahira, Kensho
IPC分类号： C30B15/02
CPC分类号： C30B15/02 , B01J4/001 , Y10S117/90 , Y10S117/912 , Y10T117/1052 , Y10T117/1056
摘要： A crystal growing apparatus includes a crucible (4), a feed pipe (10) and a pulling mechanism. The crucible serves to melt a crystalline material. The feed pipe serves to cause the crystalline material to fall into the crucible to charge the crucible with the crystalline material. The pulling mechanism serves to pull a single-crystal from the molten material in the crucible. A deceleration part (14,15) is provided on the feed pipe for lowering the falling speed of the material into the crucible.
摘要翻译：晶体生长装置包括坩埚（4），进料管（10）和牵引机构。坩埚用于熔化结晶材料。进料管用于使晶体材料落入坩埚中，以使坩埚与晶体材料一起进料。拉动机构用于从坩埚中的熔融材料拉出单晶。在进料管上设有减速部分（14,15），用于降低材料进入坩埚的下落速度。

6. 发明公开

EP0294758A1 Apparatus for growing crystals of semiconductor materials 失效转让
标题翻译： Vorrichtung zurZüchtungvon Kristallen aus Halbleitermaterialien。
公开(公告)号：EP0294758A1
公开(公告)日：1988-12-14
申请号：EP88109048.4
申请日：1988-06-07
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Kida, Michio , Sahira, Kensho
IPC分类号： C30B15/10 , C30B15/12
CPC分类号： C30B15/10 , C30B15/12 , Y10S117/90 , Y10T117/1032 , Y10T117/1052
摘要： An apparatus for growing a semiconductor crystal from a melt includes a susceptor (12), a quartz crucible (14), at least one reinforcing ring (24), and a heater (20). The crucible (14) is housed in the suscector (12) for receiving a semiconductor material therein. The reinforcing ring (14) is provided on the quartz crucible (14) for enhancing the strength of the crucible (14). The heater (20) is disposed so as to surround the suspector (12) for heating the semiconductor material contained in the crucible (14).
摘要翻译：用于从熔体生长半导体晶体的装置包括基座（12），石英坩埚（14），至少一个加强环（24）和加热器（20）。坩埚（14）容纳在用于在其中接收半导体材料的悬臂（12）中。加强环（14）设置在石英坩埚（14）上，用于提高坩埚（14）的强度。加热器（20）被设置成围绕用于加热坩埚（14）中包含的半导体材料的悬架（12）。

7. 发明授权

EP0283903B1 Method of manufacturing quartz double crucible and method of manufacturing a silicon monocrystalline rod 有权转让
标题翻译：制造石墨双晶的方法和制造硅单晶层的方法
公开(公告)号：EP0283903B1
公开(公告)日：1993-06-09
申请号：EP88104091.9
申请日：1988-03-15
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Kida, Michio , Sahira, Kensho
IPC分类号： C30B15/12
CPC分类号： C03B23/207 , C30B15/12

8. 发明授权

EP0294758B1 Apparatus for growing crystals of semiconductor materials 失效转让
标题翻译：用于生长半导体材料晶体的装置
公开(公告)号：EP0294758B1
公开(公告)日：1992-09-02
申请号：EP88109048.4
申请日：1988-06-07
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Kida, Michio , Sahira, Kensho
IPC分类号： C30B15/10 , C30B15/12
CPC分类号： C30B15/10 , C30B15/12 , Y10S117/90 , Y10T117/1032 , Y10T117/1052

9. 发明授权

EP0388503B1 Method for pulling single crystals 有权转让
标题翻译：拉伸单晶的方法
公开(公告)号：EP0388503B1
公开(公告)日：1993-09-01
申请号：EP89108388.3
申请日：1989-05-10
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Ono, Naoki , Kida, Michio , Arai, Yoshiaki , Sahira, Kensho
IPC分类号： C30B15/04 , C30B29/06
CPC分类号： C30B15/04 , C30B15/12 , Y10T117/1052

10. 发明授权

EP0286133B1 Monocrystal rod and method of pulling same from a melt and apparatus therefor 失效转让
标题翻译：单晶棒及其从熔体及其装置拉出的方法
公开(公告)号：EP0286133B1
公开(公告)日：1992-07-15
申请号：EP88105661.8
申请日：1988-04-08
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Kida, Michio , Sahira, Kensho , Nozoe, Akikuni
IPC分类号： C30B15/00 , C30B29/60
CPC分类号： C30B15/30 , C30B15/00 , C30B29/60 , Y10T428/2913 , Y10T428/2973 , Y10T428/2976 , Y10T428/298
摘要： A monocrystal rod (10) utilized for producing the semiconductor device or solar cell includes a neck section (3), a main rod section (4) and a shoulder section. The neck section (3) is smaller in diameter than a seed crystal (1). The main rod section (4) is formed integrally with the neck section (3) and is larger in diameter than the neck section (3). The shoulder section is tapered for linking the neck section (3) to the main rod section (4). The main rod section (4) has a stopper section (11) at the top portion of the main rod section (4), and the stopper section (11) is larger than the main rod section (4). Also, an apparatus (20) for preparing the monocrystal rod (10) has a safety member (29) for supporting upwards the stopper section (11) of the falling monocrystal rod. Further, a method of preparing the monocrystal rod includes the following steps. The seed crystal (1) is pulled out from a melt (22) in a crucible (21) while rotating it. The speed of pulling the seed crystal (1) is at first increased to grow the neck section (3) whose diameter is smaller than the seed crystal (11), and then is gradually decreased to grow the shoulder section. Subsequently, the pulling speed is increased again so as to prevent further increase in diameter to grow the stopper section (11) at the lower end of the shoulder section or at the top portion of the main rod section (4), and then is decreased again to grow the main rod section (4) whose diameter is equal to a required diameter.

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