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1. 发明公开

EP2989656A1 PROCÉDÉ DE FABRICATION D'UNE DIODE SCHOTTKY SUR UN SUBSTRAT EN DIAMANT 有权转让
标题翻译： VERFAHREN ZUR HERSTELLUNG EINER肖特基二极管AUF EINEM DIAMANTSUBSTRAT
公开(公告)号：EP2989656A1
公开(公告)日：2016-03-02
申请号：EP14722295.4
申请日：2014-04-18
申请人： Centre National de la Recherche Scientifique , Université Joseph Fourier , Institut Polytechnique de Grenoble
发明人： EON, David , GHEERAERT, Etienne , MURET, Pierre , PERNOT, Julien , TRAORE, Aboulaye
IPC分类号： H01L21/285 , H01L29/47 , H01L29/16
CPC分类号： H01L29/1602 , H01L21/2686 , H01L21/28537 , H01L21/2855 , H01L21/324 , H01L29/45 , H01L29/47 , H01L29/6603 , H01L29/66143 , H01L29/872
摘要： The invention relates to a method for producing a Schottky diode, comprising the following steps: a) oxygenating the surface of a semiconductive layer (105) of monocrystalline diamond, in such a way as to replace hydrogen surface terminations of the semiconductive layer (105) with oxygen surface terminations; and b) forming, by physical vapour deposition, a first conductive layer of zirconium or indium-tin oxide on the surface of the semiconductive layer (105).
摘要翻译：一种用于制造肖特基二极管的方法，包括以下步骤：使单晶金刚石的半导体层的表面氧化，以便用氧表面终止来代替半导体层的氢表面终端; 以及通过物理气相沉积在半导体层的表面上形成锆或氧化铟锡的第一导电层。

2. 发明公开

EP2839509A4 A METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE 有权
标题翻译：金属半导体金属（MSM）异质过渡二极管
公开(公告)号：EP2839509A4
公开(公告)日：2015-12-02
申请号：EP13778627
申请日：2013-04-19
申请人： UNIV CARNEGIE MELLON
发明人： HUSSIN ROZANA , CHEN YIXUAN , LUO YI
IPC分类号： H01L29/861 , H01L21/329
CPC分类号： H01L29/66219 , H01L27/0814 , H01L27/2409 , H01L29/0665 , H01L29/6603 , H01L29/6609 , H01L29/66121 , H01L29/66128 , H01L29/66136 , H01L29/861 , H01L29/872
摘要： In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

3. 发明公开

EP2372771A4 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译： HERBLEITERBAUEMENT UND HERSTELLUNGSVERFAHRENFÜREIN HALBLEITERBAUELEMENT
公开(公告)号：EP2372771A4
公开(公告)日：2014-01-15
申请号：EP09830153
申请日：2009-11-25
申请人： SHOWA DENKO KK
发明人： SUGAI AKIHIKO , SAKAGUCHI YASUYUKI
IPC分类号： H01L21/316 , H01L21/04 , H01L29/861 , H01L29/872
CPC分类号： H01L21/0465 , H01L21/0485 , H01L29/6603 , H01L29/872
摘要： A method of manufacturing a semiconductor device is provided in which a substrate is thinned and a semiconductor region made of a fine pattern is formed. The method of manufacturing of a semiconductor device (101) includes: a fine pattern forming step of forming p-type impurity regions (3, 4) and surface ohmic contact electrodes (5), which are made of fine patterns, using a photolithography method in which a stepper is used, after forming an N-type epitaxial layer (2) on a SiC single-crystal substrate (1); a protective film planarizing step of forming a protective film so as to cover the surface ohmic contact electrodes (5) and performing planarization of the protective film; a substrate thinning step of thinning the SiC single-crystal substrate (1); a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode (7) on the SiC single-crystal substrate (1); a surface Schottky contact electrode forming step of forming a Schottky metal portion (8) connected to the p-type impurity regions (3, 4) and the surface ohmic contact electrodes (5); and a step of forming a surface pad electrode (9) that covers the Schottky metal portion (8).
摘要翻译：提供了一种制造半导体器件的方法，其中衬底被薄化并且形成由精细图案制成的半导体区域。制造半导体器件（101）的方法包括：使用光刻法形成由精细图案制成的p型杂质区（3,4）和表面欧姆接触电极（5）的精细图案形成步骤在SiC单晶衬底（1）上形成N型外延层（2）之后使用步进器; 保护膜平坦化步骤，形成保护膜以覆盖表面欧姆接触电极（5）并进行保护膜的平坦化; 减薄SiC单晶衬底（1）的衬底稀化步骤; 在SiC单晶衬底（1）上形成背面欧姆接触电极（7）的背面欧姆接触电极形成步骤; 表面肖特基接触电极形成步骤，形成连接到p型杂质区（3,4）和表面欧姆接触电极（5）的肖特基金属部分（8）。以及形成覆盖肖特基金属部分（8）的表面焊盘电极（9）的步骤。

4. 发明公开

EP0457508A3 Diamond semiconductor device 失效
标题翻译：金刚石半导体器件
公开(公告)号：EP0457508A3
公开(公告)日：1992-03-25
申请号：EP91304212.3
申请日：1991-05-10
申请人： SUMITOMO ELECTRIC INDUSTRIES, LIMITED
发明人： Shiomi, Hiromu c/o Itami Works of Sumitomo , Nishibayashi, Yoshiki c/o Itami Works of Sumitomo , Fujimori, Naoji c/o Itami Works of Sumitomo
IPC分类号： H01L29/16
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/1602 , H01L29/6603 , H01L29/66045 , H01L29/812
摘要： A semiconductor device having active parts made from semiconductor diamond. The active parts comprise a high doped diamond layer (2) for supplying free carriers and a non-or low doped diamond layer (3) for giving the free carriers conductive region. The free carriers are transferred from the high doped diamond layer into the non-or low doped diamond layer by diffusion or electric field applied.

5. 发明授权

EP2372771B1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
公开(公告)号：EP2372771B1
公开(公告)日：2018-01-10
申请号：EP09830153.4
申请日：2009-11-25
申请人： SHOWA DENKO K.K.
发明人： SUGAI, Akihiko , SAKAGUCHI, Yasuyuki
IPC分类号： H01L21/329
CPC分类号： H01L21/0465 , H01L21/0485 , H01L29/6603 , H01L29/872
摘要： A method of manufacturing a semiconductor device is provided in which a substrate is thinned and a semiconductor region made of a fine pattern is formed. The method of manufacturing of a semiconductor device (101) includes: a fine pattern forming step of forming p-type impurity regions (3, 4) and surface ohmic contact electrodes (5), which are made of fine patterns, using a photolithography method in which a stepper is used, after forming an N-type epitaxial layer (2) on a SiC single-crystal substrate (1); a protective film planarizing step of forming a protective film so as to cover the surface ohmic contact electrodes (5) and performing planarization of the protective film; a substrate thinning step of thinning the SiC single-crystal substrate (1); a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode (7) on the SiC single-crystal substrate (1); a surface Schottky contact electrode forming step of forming a Schottky metal portion (8) connected to the p-type impurity regions (3, 4) and the surface ohmic contact electrodes (5); and a step of forming a surface pad electrode (9) that covers the Schottky metal portion (8).

6. 发明授权

EP2605282B1 Diamond electrical switching device 失效
标题翻译：钻石电气开关装置
公开(公告)号：EP2605282B1
公开(公告)日：2017-11-15
申请号：EP13159587.8
申请日：2007-05-16
申请人： Evince Technology Limited
发明人： Taylor, Gareth Andrew
IPC分类号： H01L29/417 , H01L29/16 , H01L29/861 , H01L29/739
CPC分类号： H01L21/0405 , H01L21/0425 , H01L29/1602 , H01L29/417 , H01L29/6603 , H01L29/66037 , H01L29/66356 , H01L29/7391 , H01L29/861

7. 发明公开

EP2839509A2 A METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE 有权
标题翻译：金属 - 半导体 - 金属（MSM）异质结二极管
公开(公告)号：EP2839509A2
公开(公告)日：2015-02-25
申请号：EP13778627.3
申请日：2013-04-19
申请人： Carnegie Mellon University
发明人： HUSSIN, Rozana , CHEN, Yixuan , LUO, Yi
IPC分类号： H01L29/861
CPC分类号： H01L29/66219 , H01L27/0814 , H01L27/2409 , H01L29/0665 , H01L29/6603 , H01L29/6609 , H01L29/66121 , H01L29/66128 , H01L29/66136 , H01L29/861 , H01L29/872
摘要： In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.
摘要翻译：在一个方面，二极管包括：具有第一侧和与第一侧相对的第二侧的半导体层，半导体层具有在第一侧和第二侧之间的厚度，半导体层的厚度基于平均值发射到半导体层中的电荷载流子的自由路径; 沉积在半导体层的第一侧上的第一金属层; 以及沉积在半导体层的第二侧上的第二金属层。

9. 发明授权

EP0457508B1 Diamond semiconductor device 失效
标题翻译：金刚石半导体装置
公开(公告)号：EP0457508B1
公开(公告)日：1997-08-20
申请号：EP91304212.3
申请日：1991-05-10
申请人： SUMITOMO ELECTRIC INDUSTRIES, INC.
发明人： Shiomi, Hiromu c/o Itami Works of Sumitomo , Nishibayashi, Yoshiki c/o Itami Works of Sumitomo , Fujimori, Naoji c/o Itami Works of Sumitomo
IPC分类号： H01L29/16
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/1602 , H01L29/6603 , H01L29/66045 , H01L29/812

10. 发明公开

EP0457508A2 Diamond semiconductor device 失效
标题翻译：钻石-Halbleiteranordnung。
公开(公告)号：EP0457508A2
公开(公告)日：1991-11-21
申请号：EP91304212.3
申请日：1991-05-10
申请人： SUMITOMO ELECTRIC INDUSTRIES, LIMITED
发明人： Shiomi, Hiromu c/o Itami Works of Sumitomo , Nishibayashi, Yoshiki c/o Itami Works of Sumitomo , Fujimori, Naoji c/o Itami Works of Sumitomo
IPC分类号： H01L29/16
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/1602 , H01L29/6603 , H01L29/66045 , H01L29/812
摘要： A semiconductor device having active parts made from semiconductor diamond. The active parts comprise a high doped diamond layer (2) for supplying free carriers and a non-or low doped diamond layer (3) for giving the free carriers conductive region. The free carriers are transferred from the high doped diamond layer into the non-or low doped diamond layer by diffusion or electric field applied.
摘要翻译：一种具有由半导体金刚石制成的有源部件的半导体器件。有源部分包括用于提供自由载流子的高掺杂金刚石层（2）和用于赋予自由载流子导电区域的非掺杂或低掺杂金刚石层（3）。通过施加的扩散或电场将自由载流子从高掺杂金刚石层转移到非掺杂或低掺杂金刚石层中。

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