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1. 发明授权

EP0719456B1 CHARGE COUPLED DEVICE, AND IMAGING DEVICE COMPRISING SUCH A CHARGE COUPLED DEVICE 失效
标题翻译：他们电荷耦合器件电荷耦合器件和图像记录装置CONTAINS
公开(公告)号：EP0719456B1
公开(公告)日：1999-09-29
申请号：EP95919604.9
申请日：1995-06-12
申请人： Koninklijke Philips Electronics N.V.
发明人： ROKS, Edwin
IPC分类号： H01L29/768 , G11C19/28
CPC分类号： G11C27/04 , G11C19/282 , H01L29/42396
摘要： The invention relates to a charge coupled device with a buried channel in which charge is detected by a MOST incorporated in the channel and having a surface channel of the conductivity type opposed to that of the charge coupled device. The source zone is situated in the centre of the CCD channel and is formed simultaneously with the channel bounding zone. The gate electrode comprises two portions situated on either side of the source zone, which portions, seen at the surface, do not overlap the source and drain zones. Below the gate electrode, a zone is formed of the same conductivity type as but with a higher doping than the CCD channel, which zone forms a charge storage region for the charge packet to be read out during the reading-out process. The source and drain zones are connected to the MOST channel region by means of extensions. The detector can be manufactured in a self-aligned manner, has a high charge storage capacity, a good noise behaviour, and a high speed.

2. 发明授权

EP0485125B1 Charge transfer device, process for its manufacture, and method driving the device 失效
标题翻译：载体装置，其制备方法和它们的控制处理
公开(公告)号：EP0485125B1
公开(公告)日：1996-07-10
申请号：EP91310121.8
申请日：1991-11-01
申请人： Matsushita Electronics Corporation
发明人： Asaumi, Masaji, Manhaim-15-Jyou 1017 , Kuroda, Takao
IPC分类号： H01L29/768 , G11C19/28 , H01L29/41 , H01L29/10
CPC分类号： H01L29/66954 , H01L29/42396 , H01L29/76833 , H01L29/76858

3. 发明授权

EP0162460B1 Integrated circuit with an input protective device 失效
标题翻译：具有输入保护装置的集成电路
公开(公告)号：EP0162460B1
公开(公告)日：1991-08-28
申请号：EP85106300.8
申请日：1985-05-22
申请人： NEC CORPORATION
发明人： Sato, Yoshinori
IPC分类号： H01L27/02 , H01L29/10
CPC分类号： H01L27/0266 , H01L29/42396

4. 发明授权

EP0202704B1 Electrode system for a semiconductor device and method of manufacturing it 失效
标题翻译：用于半导体器件的电极系统及其制造方法
公开(公告)号：EP0202704B1
公开(公告)日：1990-11-28
申请号：EP86200755.6
申请日：1986-05-02
申请人： Philips Electronics N.V.
发明人： Davids, Geert Jan Thomas , van Arendonk, Anton Maria Petrus
IPC分类号： H01L21/28 , H01L21/60 , H01L29/60
CPC分类号： H01L21/76897 , H01L21/7684 , H01L29/42396 , H01L29/66954

5. 发明公开

EP0298573A1 A charge-coupled device 失效
标题翻译：电荷耦合器件
公开(公告)号：EP0298573A1
公开(公告)日：1989-01-11
申请号：EP88201442.6
申请日：1988-07-08
申请人： Philips Electronics N.V.
发明人： Slob, Arie c/o Philips International B.V.
IPC分类号： H01L27/10 , G11C19/28
CPC分类号： G11C27/04 , H01L27/1057 , H01L29/42396 , H01L29/76816 , H01L29/76875
摘要： A charge-coupled device has a series register (A) having charge storage electrodes (3a) for defining charge storage wells and charge transfer electrodes (3b) for transporting charge between the charge storage wells and a parallel section (C) having channels (1a,1b) extending transversely of the series register (A). The parallel section (C) has charge storage electrodes (11a,12a,13a....Na) spaced apart along the channels, (1a,1b) to define a respective charge storage well with each channel to provide a respective row of charge storage wells extending transversely of the channels and has charge transfer electrodes (12b....Nb) for transferring charge between adjacent rows of charge storage wells, and a transfer gate (T1) for transferring charge between the series register (A) and an adjacent row of charge storage wells defined by the channels (1a,1b) and a first charge storage electrode (11a) of the parallel section. The first charge storage electrode (11a) of the parallel section (C) is shaped so that, at least over each channel (1a,1b), the first charge storage electrode (11a) is wider than succeeding charge storage electrodes (12a,...Na) of the parallel section (C).
摘要翻译：电荷耦合器件具有串联寄存器（A），其具有用于定义电荷存储阱的电荷存储电极（3a）和用于在电荷存储阱和具有沟道（1a）的平行部分（C）之间传输电荷的电荷传输电极（3b），1b）横向延伸到串联寄存器（A）。平行部分（C）具有沿通道间隔开的电荷存储电极（11a，12a，13a ... Na），以限定各自的电荷存储阱，每个通道提供相应的电荷行存储井，其横向延伸通道并且具有用于在相邻行电荷存储阱之间传输电荷的电荷传输电极（12b ... Nb）;以及用于在串联寄存器（A）与电荷存储阱之间传输电荷的传输门（T1）由通道（1a，1b）和平行部分的第一电荷存储电极（11a）限定的相邻的一排电荷存储阱。平行部分（C）的第一电荷存储电极（11a）成形为使得至少在每个通道（1a，1b）上，第一电荷存储电极（11a）比后续的电荷存储电极（12a，...）宽。 ..Na）的平行部分（C）。

6. 发明公开

EP0171105A3 Method of manufacturing a semiconductor device and device manufactured by the use of the method 有权
标题翻译：制造半导体器件的方法和使用该方法制造的器件
公开(公告)号：EP0171105A3
公开(公告)日：1986-02-19
申请号：EP85201077
申请日：1985-07-04
申请人： N.V. Philips' Gloeilampenfabrieken
发明人： Maas, Henricus Godefridus Rafael , Slotboom, Jan Willem , Appels, Johannes Arnoldus , Osinksi, Kazimierz
IPC分类号： H01L21/28 , H01L29/60
CPC分类号： H01L29/66954 , H01L29/42396 , Y10S438/911
摘要： A method of manufacturing a semiconductor device having narrow coplanar silicon electrodes which are separated from each other by grooves or slots (14) having a width in the submicron range. The electrodes are alternately covered by oxide and by an oxidation-preventing layer, for example silicon nitride. According to the invention, a first and a second electrode (3B1, 3B2), which are covered with the same layer and which enclose a third electrode (3C1 ) covered by the other layer are first interconnected inside a connection region (21). Two of the three electrodes are separated from the connection region by etching. By selective etching, overlapping contact windows (15, 16) are provided on all three electrodes. Preferably, inside contact windows on oxide etching of the groove (14) is omitted.

7. 发明公开

EP0097837A3 Charge transfer device having improved electrodes 失效
标题翻译：具有改进电极的充电传输装置
公开(公告)号：EP0097837A3
公开(公告)日：1985-10-23
申请号：EP83105446
申请日：1983-06-01
申请人： NEC CORPORATION
发明人： Matsuda, Hajime , Morito, Hiroshi
IPC分类号： H01L29/78 , H01L29/60
CPC分类号： H01L29/768 , H01L29/42396 , H01L29/76
摘要： In a charge transfer device where a plurality of electrodes is arranged in a row along a charge transfer direction on a semiconductor substrate, and electrically separated therefrom, each of said electrodes has a shape in plan view which is indented or concave in said charge transfer direction for producing a potential well in the semiconductor region which, in plan view, diverges in the direction of the charge transfer. Arrowhead shapes or crescent shapes, with the concave side directed in said charge transfer direction, are preferred embodiments for the shape of the electrodes.

8. 发明公开

EP0012561A1 Semiconductor charge transfer devices 有权
标题翻译：半导体电荷传输设备。
公开(公告)号：EP0012561A1
公开(公告)日：1980-06-25
申请号：EP79302795.4
申请日：1979-12-05
申请人： THE GENERAL ELECTRIC COMPANY, p.l.c.
发明人： Partridge, Susan Lorraine
IPC分类号： H01L29/78 , H01L29/60
CPC分类号： H01L29/76883 , H01L29/42396 , H01L29/7685
摘要： A semiconductor charge transfer device, e.g. a CCD area imaging array, having a multi-level polysilicon gate structure (20-22, 24, 25, 26) the geometry of the bus-line portions (24, 25, 26) of which are such that each bus-line has relatively large area regions where it does not overlap another polysilicon layer. The making of interconnections (24b, 25b, 26b) between the polysilicon bus-lines and an overlying metal conductor pattern (24a, 25a, 26a) without producing inter-level short circuits via pinholes in the polysilicon is thus facilitated.

9. 发明公开

EP0652589A1 Method of manufacturing a semiconductor device comprising two coplanar electrical conductors separated by a dielectric layer and semiconductor device obtained by suel a method 失效
标题翻译：一种用于通过一个介电层制造半导体装置，所述共面的两个过程包括分开的电导体，以及由该方法的半导体装置制造。
公开(公告)号：EP0652589A1
公开(公告)日：1995-05-10
申请号：EP94203201.2
申请日：1994-11-03
申请人： PHILIPS ELECTRONICS N.V.
发明人： Peek, Hermanus Leonardus
IPC分类号： H01L21/28 , H01L29/423
CPC分类号： H01L29/66954 , H01L29/42396
摘要： A method of manufacturing a semiconductor device whereby a surface of a semiconductor body 1 is covered with an electrically insulating layer 8 and at least two electrical conductors 20, 23 are provided on the insulating layer next to one another and mutually separated by an interposed dielectric layer 21. The conductor 20 is formed from a first conductive layer deposited on the insulating layer. The upper surface and at least the flank 25 of the conductor 20 facing the other conductor are covered with the dielectric layer 21. Then a second conductive layer 22 is deposited over the entire surface which exhibits a step corresponding to the flank 25 of the first conductor. Subsequently, a mask 24 is formed which defines the second conductor, after which the second conductor 23 is formed from the second conductive layer through etching. According to the invention, the mask 24 is so aligned relative to the first conductor 20 that the edge of the mask facing towards the flank 25 is situated above the dielectric layer on the flank of the first conductor. The layer 22 is etched isotropically, which etching is continued so long after the second conductive layer 22 has been entirely removed from above the first conductor that said step in the second conductive layer has been removed at least partly owing to underetching below the mask. The invention may advantageously be used for the manufacture of a charge coupled device in which the electrodes do not overlap one another.
摘要翻译：一种制造半导体器件，其中的半导体主体1的表面在电覆盖有绝缘层8和至少两个电导体20，提供彼此相邻且相互隔开的绝缘层23的方法，在具有介电层 21.导体20从沉积在绝缘层上的第一导电层形成。的上表面和面向另一个导体的导体20的至少侧面25覆盖有电介质层21。然后形成第二导电层22被沉积在整个表面表现出一个步骤对应于所述第一导体的所述侧面25 ，随后，掩模24形成，其限定所述第二导体，afterwhich第二导体23从第二导电层通过蚀刻而形成。。根据本发明，掩模24被这样对准相对于第一导体20没有朝向侧面25位于所述第一导体的所述侧面的电介质层的上方朝向所述掩模的边缘。层22被各向同性地蚀刻，其中蚀刻继续进行第二导电层22后，只要从所述第一导体，所述至少部分地由于钻蚀掩模下面的步骤在所述第二导电层已被除去上述被完全移除。在本发明可以有利地用于在其中电极不相互重叠的电荷耦合器件的制造。

10. 发明公开

EP0342699A3 Ladungsgekoppeltes Halbleiterbauelement 失效
标题翻译：半导体充电耦合器件
公开(公告)号：EP0342699A3
公开(公告)日：1990-08-29
申请号：EP89109069.8
申请日：1989-05-19
申请人： Deutsche Aerospace AG , Lutz, Gerhard, Dr. , Strüder, Lothar
发明人： Kemmer, Josef, Dr. , Holl, Peter , Lutz, Gerhard, Drw. , Strüder, Lothar
IPC分类号： H01L29/78 , H01L29/60 , H01L31/10 , G11C19/00
CPC分类号： H01L29/7685 , G11C19/282 , H01L29/42396
摘要： Es ist ein ladungsgekoppeltes Halbleiterbauelement beschrieben mit Speicherung und Transfer von Ladungsträgern in mindestens einem Kanal im Volumen eines Halbleiterkörpers nahe seiner mit Gate-Elektroden versehenen Oberfläche, wobei die Führung der Ladungsträger in dem Kanal/den Kanälen durch Veränderung der Form der Gate-Elektroden in einer Richtung im wesentlichen senkrecht zur Transferrichtung erfolgt.

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