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    • 4. 发明授权
    • SINGLE-CHANNEL MAGNETIC HEAD WITH MAGNETORESISTIVE ELEMENT
    • 单通道磁头的磁阻元件
    • EP0935799B1
    • 2003-06-11
    • EP98900330.6
    • 1998-01-22
    • Koninklijke Philips Electronics N.V.
    • RUIGROK, Jacobus, Josephus, Maria
    • G11B5/39
    • G11B5/00813B82Y10/00B82Y25/00G11B5/3903G11B5/3922G11B5/3967G11B25/063G11B2005/3996
    • Single-channel magnetic head having a head face (1) which extends in a first direction (I) in which a magnetic record carrier (3) is relatively movable with respect to the magnetic head, and in a second direction (II) transverse to the first direction. The magnetic head has a structure of layers which, viewed in the first direction, are situated one on top of the other and extend substantially in the second direction and a third direction (III) transvese to the first and the second direction. The structure is provided with a magnetoresistive measuring element (5), a first magnetic element (7) and a second magnetic element (9). Both magnetic elements are electrically conducting, while the measuring element is arranged electrically in series between the two magnetic elements for passing a measuring current (i) through the measuring element substantially in the third direction. Each magnetic element has an electric contact face (7a, 9a). To obtain a stable single-channel magnetic head having a narrow, well-defined scanning width, at least one magnetic element extending as far as the head face has an extensiveness which is larger in the second direction than in the third direction. This extensiveness in the second direction is also larger than the effective width (w) of the measuring element. In the third direction, the relevant magnetic element has a larger relative magnetic permeability (νrIII) than in the second direction.
    • 6. 发明公开
    • MAGNETIC TRANSDUCER
    • MAGNETISCHER UMWANDLER
    • EP0794581A1
    • 1997-09-10
    • EP96931257.8
    • 1996-09-19
    • TDK Corporation
    • ARAKI, Satoru, TDK CorporationSATO, Yuichi, TDK CorporationSHINOURA, Osamu, TDK Corporation
    • H01L43/08H01F10/30H01F41/18G11B5/39
    • B82Y25/00B82Y10/00G11B5/39G11B5/3903G11B5/3919G11B5/3922G11B5/3925G11B5/3932G11B5/399G11B2005/3996H01F10/3268H01L43/08H01L43/10
    • According to the present invention on a magnetoresistance device having a magnetoresistance effect element, since iron oxide FeO x exhibiting antiferromagnetism is used as a pinning layer, a spin-valve type magnetoresistance effect element can be obtained which is particularly excellent in corrosion resistance and has a magnetoresistance ratio with an MR slope no less than 0.7%/Oe in the region of the high-frequency magnetic field of 1MHz. Further, the rise-up characteristic of an MR curve at the zero magnetic field is extremely excellent with small hysteresis, and it has high heat resistance. The heat resistance is further improved by interposing an oxygen blocking layer between the pinning layer and a ferromagnetic layer. In the magnetoresistance device, for example, an MR head, using the magnetoresistance effect element having a magnetic multilayer film, an output voltage is approximately five times as high as that of the conventional material. Accordingly, there can be provided an excellent MR head which has extremely high reliability and enables the reading for ultrahigh density magnetic recording exceeding 1Gbit/inch 2 .
    • 根据本发明,关于具有磁阻效应元件的磁阻器件,由于使用具有反铁磁性的氧化铁FeOx作为钉扎层,因此可获得耐腐蚀性特别优异的自旋阀型磁电阻效应元件,并具有磁阻 在1MHz的高频磁场的区域中,MR斜率不小于0.7%/ Oe。 此外,零磁场下的MR曲线的上升特性非常优异,滞后小,耐热性高。 通过在钉扎层和铁磁层之间插入氧阻挡层来进一步提高耐热性。 在磁电阻器件中,例如,使用具有磁性多层膜的磁阻效应元件的MR磁头,输出电压大约是常规材料的5倍。 因此,可以提供具有极高可靠性的极好的MR磁头,并且能够读取超过1Gbit / inch 2的超高密度磁记录。
    • 7. 发明公开
    • Method of manufacturing a thin-film magnetic head, and magnetic head manufactured by means of said method
    • 通过该方法和磁头的装置制造的薄膜磁头的制造方法。
    • EP0658881A1
    • 1995-06-21
    • EP94203564.3
    • 1994-12-08
    • PHILIPS ELECTRONICS N.V.
    • Postma, Lambertusvan Straalen, Arie JohanSomers, Gerardus Henricus Johannes
    • G11B5/33G11B5/39
    • G11B5/3922G11B5/1272G11B5/3163G11B5/332G11B5/3967Y10T29/49037Y10T29/49039
    • Method of manufacturing a thin-film magnetic head provided with a transducing element (23) and at least one flux-guiding element (17a, 17b). An electrically conducting layer (8) of a non-magnetic material and a second electrically insulating layer (9) of a non-magnetic material are successively formed on a first electrically insulating layer (5) of a non-magnetic material. The second electrically insulating layer is subsequently provided with at least an interruption exposing a portion of the electrically conducting layer. Subsequently, the flux-guiding element is formed by electrodepositing a soft-magnetic material on said portion until the interruption is filled, whereby the flux-guiding element and the second electrically insulating layer constitute an at least substantially plane surface on which an electrically insulating spacer layer (21) is formed. Subsequently, the transducing element is provided on the spacer layer. The magnetic head thus formed has a non-magnetic transducing gap (35) terminating in a head face (33) and being constituted by the first electrically insulating layer (5) and the electrically conducting layer (8).
    • 制造设置有换能元件(23)和至少一个磁通引导元件的薄膜磁头的方法(17A,17B)。 一个非磁性材料的导电层(8)和非磁性体构成的第二电绝缘层(9)连续地形成的非磁性材料制成的第一电绝缘层(5)上。 第二电绝缘层随后设置有至少在中断暴露导电层的一部分。 随后,磁通引导元件由直到中断被填充,由此使焊剂引导元件和所述第二电绝缘层构成的至少基本平坦的表面上电沉积在所述部分上的软磁材料形成在电绝缘衬垫 层(21)形成。 随后,将换能元件被设置在间隔层上。 磁头由此形成具有非磁性换能间隙(35)终止于磁头端面(33)和由所述第一电绝缘层(5)和所述电被构成导电层(8)。