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    • 4. 发明授权
    • ACCESS METHOD AND DEVICE FOR MESSAGE-TYPE MEMORY MODULE
    • 用于消息类型存储器模块的访问方法和装置
    • EP3015986B1
    • 2017-10-04
    • EP14832194.6
    • 2014-07-31
    • Huawei Technologies Co., Ltd.
    • GAO, XiangLI, BingSHAN, ShuchangHU, Yu
    • G06F11/08G06F11/10
    • G06F11/1068G06F11/1044G06F11/108G11C29/52
    • The present invention discloses a memory access apparatus for a message-type memory module, where the apparatus includes: a read-write module, configured to store, to a corresponding DRAM, an SCBC to be stored within a current read-write cycle; and a processing module, configured to: calculate one group of error detecting code for each SCBC in a memory row, and calculate one group of error correcting code for all SCBCs in a memory row; where the read-write module is further configured to: store the error detecting code in an (M+2) th DRAM in the memory row, and store the error correcting code in a Z th DRAM in the memory row, where Z is a positive integer, 1 ‰¤ Z ‰¤ (M+1), and error correcting codes in consecutive (M+1) memory rows are stored in different DRAMs. Embodiments of the present invention further provide a corresponding method. According to the technical solutions of the present invention, fine-granularity encoding protection is performed in a basic read-write unit of SCBC, and variable-granularity memory access is supported, so that error-correcting can be implemented for any multi-bit error in a single DRAM.
    • 本发明公开了一种消息类型内存模块的内存访问装置,所述装置包括:读写模块,用于将待存储在当前读写周期内的SCBC存储到对应的DRAM中; 处理模块,用于为存储器行中每个SCBC计算一组错误检测码,并为存储器行中的所有SCBC计算一组纠错码; 其中,所述读写模块还用于:将所述错误检测码存储在所述存储器行的第(M + 2)DRAM中,并将所述错误校正码存储在所述存储器行中的第Z DRAM中,其中Z为 (M + 1),连续(M + 1)存储行中的纠错码被存储在不同的DRAM中。 本发明的实施例还提供了相应的方法。 根据本发明的技术方案,在SCBC的基本读写单元中执行细粒度编码保护,并且支持可变粒度存储器访问,从而可以对任何多比特错误执行纠错 在单个DRAM中。