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1. 发明公开

EP2527853A2 Multifunctional nanoscopy for imaging cells 审中-公开
公开(公告)号：EP2527853A2
公开(公告)日：2012-11-28
申请号：EP12172535.2
申请日：2007-07-31
申请人： Washington University
发明人： Solin, Stuart A. , Wallace, Kirk D. , Wickline, Samuel A. , Hughes, Michael S.
IPC分类号： G01R29/12 , G11C13/02 , G01R29/08 , G06F19/00 , G11C16/02
CPC分类号： G01N27/04 , G01N15/1031 , G01N2015/0038 , G01R27/02 , G01R33/09 , G01R33/095 , G01R33/1269 , G11C11/161 , G11C11/18 , G11C13/0019
摘要： Disclosed herein is an apparatus for sensing characteristics of an object. In a preferred embodiment, the apparatus comprises an array, wherein the array comprises a plurality of nanoscale hybrid semiconductor/metal devices which are in proximity to an object, each hybrid semiconductor/metal device being configured to produce a voltage in response to a perturbation, wherein the produced voltage is indicative of a characteristic of the object. Any of a variety of nanoscale EXX sensors can be selected as the hybrid semiconductor/metal devices in the array. With such an array, ultra high resolution images of nanoscopic resolution can be generated of objects such as living cells, wherein the images are indicative of a variety of cell biologic processes.

2. 发明公开

EP1612775A3 Extraordinary magnetoresistive sensor with in-stack bias 审中-公开
标题翻译：与所述层堆叠偏压异常磁致电阻传感器
公开(公告)号：EP1612775A3
公开(公告)日：2007-01-24
申请号：EP05252747.0
申请日：2005-05-04
申请人： Hitachi Global Storage Technologies Netherlands B.V.
发明人： Carey, Matthew J. , Gurney, Bruce A. , Maat, Stefan , Smith, Neil
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/39 , G11B5/3993 , G11B2005/0008 , H01L43/08
摘要： An extraordinary magnetoresistance (EMR) sensor has an antiferromagnetic/ferromagnetic exchange-coupled bilayer structure on top of the EMR active film. The ferromagnetic layer in the bilayer structure has perpendicular magnetic anisotropy and is exchange-biased by the antiferromagnetic layer. The antiferromagnetic/ferromagnetic bilayer structure provides a magnetic field perpendicular to the plane of the EMR active film to bias the magnetoresistance vs. field response of the EMR sensor. The ferromagnetic layer may be formed of any of the ferromagnetic materials useful for perpendicular magnetic recording, and is prepared in a way that its anisotropy axis is significantly out-of-plane. The antiferromagnetic layer is formed of any of the known Mn alloys, such as PtMn, NiMn, FeMn, IrMn, PdMn, PtPdMn and RhMn, or any of the insulating antiferromagnetic materials, such as those based on the cobalt oxide and nickel oxide antiferromagnetic materials.

3. 发明公开

EP1619514A2 Extraordinary magneto resistive [emr] device 审中-公开
标题翻译： Anordnung mitaussergewöhnlichenMagnetowiderstand
公开(公告)号：EP1619514A2
公开(公告)日：2006-01-25
申请号：EP05105265.2
申请日：2005-06-15
申请人： Hitachi Global Storage Technologies B. V.
发明人： Chattopadhyay, Amitava , Fontana, Jr., Robert E. , Gurney, Bruce Alvin , Maat, Stefan , Marinero, Ernesto E.
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3993 , G11B5/4853
摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.
摘要翻译：具有最佳磁敏感度的非凡的磁阻传感器能够读取非常窄的和短的磁性位。传感器包括一层半导体层和一层导电材料。第一和第二引线与半导体材料的边缘电连接，其中一个引线位于距离传感器端部一定距离的位置。该传感器还包括第一和第二电压引线，位于其中一个电流引线的两侧。

4. 发明公开

EP2527852A3 Multifunctional nanoscopy for imaging cells 审中-公开
公开(公告)号：EP2527852A3
公开(公告)日：2014-08-20
申请号：EP12172526.1
申请日：2007-07-31
申请人： Washington University
发明人： Solin, Stuart A. , Wallace, Kirk D. , Wickline, Samuel A. , Hughes, Michael S.
IPC分类号： G11C13/02 , G01R29/08 , G06F19/00 , G11C16/02 , G11C11/18 , G01R33/09
CPC分类号： G01N27/04 , G01N15/1031 , G01N2015/0038 , G01R27/02 , G01R33/09 , G01R33/095 , G01R33/1269 , G11C11/161 , G11C11/18 , G11C13/0019
摘要： Disclosed herein is an apparatus for sensing characteristics of an object. In a preferred embodiment, the apparatus comprises an array, wherein the array comprises a plurality of nanoscale hybrid semiconductor/metal devices which are in proximity to an object, each hybrid semiconductor/metal device being configured to produce a voltage in response to a perturbation, wherein the produced voltage is indicative of a characteristic of the object. Any of a variety of nanoscale EXX sensors can be selected as the hybrid semiconductor/metal devices in the array. With such an array, ultra high resolution images of nanoscopic resolution can be generated of objects such as living cells, wherein the images are indicative of a variety of cell biologic processes.

5. 发明授权

EP1155453B1 EXTRAORDINARY MAGNETORESISTANCE AT ROOM TEMPERATURE IN INHOMOGENEOUS NARROW-GAP SEMICONDUCTORS 有权
标题翻译：临时股东磁阻AT室温下以小带距离不均匀SEMICONDUCTORS
公开(公告)号：EP1155453B1
公开(公告)日：2011-03-16
申请号：EP00980877.5
申请日：2000-11-30
申请人： TDK Corporation
发明人： HINES, Daniel, R. , SOLIN, Stuart , THIO, Tineke , ZHOU, Tao
IPC分类号： G01R33/09 , H01L43/08 , G11B5/39
CPC分类号： G11C11/14 , G01R33/09 , G01R33/095 , G11B5/37 , G11B5/398 , G11B5/3993 , H01L43/08 , Y10T428/1143 , Y10T428/12576 , Y10T428/12937
摘要： A symmetric van der Pauw disk (12) of homogeneous nonmagnetic semiconductor material, such as indium antimonide, with an embedded concentric conducting material (22), such as gold, inhomogeneity exhibits room temperature geometric extraordinary magnetoresistance (EMR) as high as 100 %, 9,000 % and 750,000 % at magnetic fields of 0.05, 0.25 and 4.0 Tesla, respectively. Moreover, for inhomogeneities of sufficiently large cross-section relative to that of the surrounding semiconductor material, the resistance of the disk is field-independent up to an onset field above which the resistance increases rapidly. These results can be understood in terms of the field-dependent deflection of current around the inhomogeneity. For example, a bilinear conformal mapping is used to transform a circular composite van der Pauw disk sensor (12) having an embedded conducting inhomogeneity (22) into a corresponding externally shunted rectangular plate structure. The result is an EMR sensor that can be realized in very simple structures which faccilitate fabrication in mesoscopic dimensions important for many magnetic sensor applications.

6. 发明授权

EP1505404B1 MAGNETIC SENSOR 有权
标题翻译：磁性传感器
公开(公告)号：EP1505404B1
公开(公告)日：2011-01-12
申请号：EP03792617.7
申请日：2003-02-14
申请人： National Institute of Advanced Industrial Science and Technology , Japan Science and Technology Agency
发明人： TOKURA, Y., Nat. Inst. of Adv. Ind. Sce. & Techn. , KAWASAKI, M., Nat. Inst. of Adv. Ind. Sce. & Techn , YAMADA, H., Nat. Inst. of Adv. Ind. Sce. & Techn. , OGAWA, Yoshihiro , KANEKO, Yoshio
IPC分类号： G01R33/02
CPC分类号： G11C13/06 , G01R33/0325 , G01R33/095 , G11B5/1278 , G11B11/10547
摘要： A magnetic sensor in which a magnetic record can be reproduced even if the record is magnetized with micro size, the magnetized record on a magnetooptic disc can be read out directly without irradiating the magnetooptic disc with the incident light itself, and a signal of high S/N ratio can be obtained. The magnetic sensor comprises magnetic sensor elements (102) having electrical polarization arranged on a vertical recording medium (101), and a laser beam generating means acting on the magnetic sensor elements (102). A laser beam (104) having a frequency ω from the laser light generating means impinges on the magnetic sensor element (102) and information is read out from the vertical recording medium (101) based on the variation in the rotational angle φ of the plane of polarization of a second harmonic (105) having a frequency 2ω leaving the magnetic sensor element (102).
摘要翻译：一种磁传感器，其中即使磁记录被微尺寸磁化也可以再现磁记录，磁光盘上的磁化记录可以直接读出而不用用入射光本身照射磁光盘，而高S信号 / N比可以得到。磁传感器包括设置在垂直记录介质（101）上的具有电极化的磁传感器元件（102），以及作用于磁传感器元件（102）的激光束产生装置。具有来自激光产生装置的频率ω的激光束（104）撞击在磁传感器元件（102）上，并且基于平面的旋转角度φ的变化从垂直记录介质（101）中读出信息具有离开磁传感器元件（102）的频率2ω的二次谐波（105）的极化。

7. 发明公开

EP1868254A1 Magnetoresistance device 有权
标题翻译： Magnetowiderstandsvorrichtung
公开(公告)号：EP1868254A1
公开(公告)日：2007-12-19
申请号：EP06115403.5
申请日：2006-06-13
申请人： Hitachi Ltd.
发明人： Williams, David , Wunderlich, Jörg , Troup, Andrew , Hasko, David
IPC分类号： H01L43/08
CPC分类号： G01R33/093 , B82Y25/00 , C07D491/04 , G01R33/095 , G11B5/3993 , G11C11/14 , H01L43/08
摘要： A magnetoresistance device (1) exhibiting the extraordinary magnetoresistance effect (EMR) includes an elongate channel (2) formed of silicon. A conductor (6) comprising titanium silicide, which acts as a shunt, is connected to the channel along one side of the channel and leads (8 1 , 8 2 , 8 3 , 8 4 , 8 5 , 8 6 ) are connected to and spaced along the channel on the opposite side.
摘要翻译：具有非凡磁阻效应（EMR）的磁阻器件（1）包括由硅形成的细长通道（2）。作为分流器的包含硅化钛的导体（6）与沟道的一侧连接，并且引线（8 1，8 2，8 3，8 4，8 5，8 6）连接到并且沿着相对侧上的通道间隔开。

8. 发明公开

EP2597480A1 Capteur de champ magnétique 有权
标题翻译：磁场传感器
公开(公告)号：EP2597480A1
公开(公告)日：2013-05-29
申请号：EP12193866.6
申请日：2012-11-22
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： Delaet, Bertrand , Viala, Bernard
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , G01R33/095 , G11B5/3909 , H01F10/32 , H01L43/02
摘要： Capteur de champ magnétique comportant au moins un barreau magnétorésistif (20) comprenant :
- une couche libre (34) réalisée dans un matériau magnétostrictif qui présente un coefficient λ s de magnétostriction dont la valeur absolue est supérieure à 20 ppm à 25°C, et
- une couche (44) génératrice de contrainte apte à exercer une contrainte mécanique uniaxiale σ, parallèle à la direction longitudinale du barreau à plus ou moins 10° près, telle que le produit λ s σ soit positif et supérieur à 500 ppm.MPa à 25°C.
摘要翻译：由具有.lambda.s磁致伸缩系数的绝对值超过20 ppm的在25℃下的磁致伸缩材料的自由层（34），以及 - - ：磁场传感器，其包括至少一个磁阻条（20），包括一个层（44）能够产生约束机械应力σ单轴，施加平行于杆的纵向方向大致10°的，使得λsσ积为正和500在25℃下ppm.MPa大于。

9. 发明公开

EP2527852A2 Multifunctional nanoscopy for imaging cells 审中-公开
标题翻译： Multifunktionelle Nanoskopie zur Abbildung von Zellen
公开(公告)号：EP2527852A2
公开(公告)日：2012-11-28
申请号：EP12172526.1
申请日：2007-07-31
申请人： Washington University
发明人： Solin, Stuart A. , Wallace, Kirk D. , Wickline, Samuel A. , Hughes, Michael S.
IPC分类号： G01R29/12 , G11C13/02 , G01R29/08 , G06F19/00 , G11C16/02
CPC分类号： G01N27/04 , G01N15/1031 , G01N2015/0038 , G01R27/02 , G01R33/09 , G01R33/095 , G01R33/1269 , G11C11/161 , G11C11/18 , G11C13/0019
摘要： Disclosed herein is an apparatus for sensing characteristics of an object. In a preferred embodiment, the apparatus comprises an array, wherein the array comprises a plurality of nanoscale hybrid semiconductor/metal devices which are in proximity to an object, each hybrid semiconductor/metal device being configured to produce a voltage in response to a perturbation, wherein the produced voltage is indicative of a characteristic of the object. Any of a variety of nanoscale EXX sensors can be selected as the hybrid semiconductor/metal devices in the array. With such an array, ultra high resolution images of nanoscopic resolution can be generated of objects such as living cells, wherein the images are indicative of a variety of cell biologic processes.
摘要翻译：本文公开了一种用于感测物体的特性的装置。在优选实施例中，该装置包括阵列，其中阵列包括接近物体的多个纳米级混合半导体/金属器件，每个混合半导体/金属器件被配置为响应于扰动产生电压，其中所产生的电压表示物体的特性。可选择各种纳米级EXX传感器中的任何一种作为阵列中的混合半导体/金属器件。利用这种阵列，可以生成诸如活细胞的物体的纳米分辨率的超高分辨率图像，其中图像指示各种细胞生物过程。

10. 发明公开

EP1505404A4 MAGNETIC SENSOR 有权
标题翻译： MAGNETSENSOR
公开(公告)号：EP1505404A4
公开(公告)日：2009-04-22
申请号：EP03792617
申请日：2003-02-14
申请人： NAT INST OF ADVANCED IND SCIEN , JAPAN SCIENCE & TECH AGENCY
发明人： TOKURA Y , KAWASAKI M , YAMADA H , OGAWA YOSHIHIRO , KANEKO YOSHIO
IPC分类号： G01R33/032 , G11B5/127 , G11B11/105 , G01R33/02
CPC分类号： G11C13/06 , G01R33/0325 , G01R33/095 , G11B5/1278 , G11B11/10547
摘要： A magnetic sensor in which a magnetic record can be reproduced even if the record is magnetized with micro size, the magnetized record on a magnetooptic disc can be read out directly without irradiating the magnetooptic disc with the incident light itself, and a signal of high S/N ratio can be obtained. The magnetic sensor comprises magnetic sensor elements (102) having electrical polarization arranged on a vertical recording medium (101), and a laser beam generating means acting on the magnetic sensor elements (102). A laser beam (104) having a frequency ω from the laser light generating means impinges on the magnetic sensor element (102) and information is read out from the vertical recording medium (101) based on the variation in the rotational angle φ of the plane of polarization of a second harmonic (105) having a frequency 2ω leaving the magnetic sensor element (102).
摘要翻译：一种磁传感器，其中即使磁记录被微尺寸磁化也可以再现磁记录，磁光盘上的磁化记录可以直接读出而不用用入射光本身照射磁光盘，而高S信号 / N比可以得到。磁传感器包括设置在垂直记录介质（101）上的具有电极化的磁传感器元件（102），以及作用于磁传感器元件（102）的激光束产生装置。具有来自激光产生装置的频率ω的激光束（104）撞击在磁传感器元件（102）上，并且基于平面的旋转角度φ的变化从垂直记录介质（101）中读出信息具有离开磁传感器元件（102）的频率2ω的二次谐波（105）的极化。

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