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1. 发明公开

EP1612775A2 Extraordinary magnetoresistive sensor with in-stack bias 审中-公开
标题翻译： Ausserordentlicher Magnetwiderstandssensor mit Vormagnetisierung im Schichtstapel
公开(公告)号：EP1612775A2
公开(公告)日：2006-01-04
申请号：EP05252747.0
申请日：2005-05-04
申请人： Hitachi Global Storage Technologies Netherlands B.V.
发明人： Carey, Matthew J. , Gurney, Bruce A. , Maat, Stefan , Smith, Neil
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/39 , G11B5/3993 , G11B2005/0008 , H01L43/08
摘要： An extraordinary magnetoresistance (EMR) sensor has an antiferromagnetic/ferromagnetic exchange-coupled bilayer structure on top of the EMR active film. The ferromagnetic layer in the bilayer structure has perpendicular magnetic anisotropy and is exchange-biased by the antiferromagnetic layer. The antiferromagnetic/ferromagnetic bilayer structure provides a magnetic field perpendicular to the plane of the EMR active film to bias the magnetoresistance vs. field response of the EMR sensor. The ferromagnetic layer may be formed of any of the ferromagnetic materials useful for perpendicular magnetic recording, and is prepared in a way that its anisotropy axis is significantly out-of-plane. The antiferromagnetic layer is formed of any of the known Mn alloys, such as PtMn, NiMn, FeMn, IrMn, PdMn, PtPdMn and RhMn, or any of the insulating antiferromagnetic materials, such as those based on the cobalt oxide and nickel oxide antiferromagnetic materials.
摘要翻译：非常大的磁阻（EMR）传感器在EMR活性膜的顶部具有反铁磁/铁磁交换耦合双层结构。双层结构中的铁磁层具有垂直的磁各向异性，并被反铁磁层交换偏置。反铁磁/铁磁双层结构提供垂直于EMR有源膜的平面的磁场，以偏置EMR传感器的磁阻与场响应。铁磁层可以由用于垂直磁记录的任何铁磁材料形成，并且以其各向异性轴显着超出平面的方式制备。反铁磁层由任何已知的Mn合金形成，例如PtMn，NiMn，FeMn，IrMn，PdMn，PtPdMn和RhMn，或任何绝缘反铁磁材料，例如基于氧化钴和氧化镍反铁磁材料的那些。

2. 发明公开

EP1653242A2 CPP Magnetoresistive Sensor and CPP Read Head 审中-公开
标题翻译： CPP磁阻传感器和CPP Lesekopf
公开(公告)号：EP1653242A2
公开(公告)日：2006-05-03
申请号：EP05105151.4
申请日：2005-06-13
申请人： Hitachi Global Storage Technologies Netherlands B.V.
发明人： Carey, Matthew J. , Childress, Jeffrey R. , Maat, Stefan
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer and with their magnetization directions oriented antiparallel. One of the ferromagnetic layers in the AP-pinned structure is the reference layer in contact with the CPP-SV sensor's nonmagnetic electrically conducting spacer layer. In the improved AP-pinned structure each of the ferromagnetic layers has a thickness greater than 30 Å, preferably greater than approximately 50 Å, and the APC layer is either Ru or Ir with a thickness less than 7 Å, preferably about 5 Å or less. The ultrathin APC layer, especially if formed of iridium (Ir), provides significant coupling strength to allow the thick ferromagnetic layers to retain their magnetization directions in a stable antiparallel orientation.
摘要翻译：电流垂直于平面的自旋阀（CPP-SV）磁阻传感器具有改进的反平行（AP）钉扎结构。 AP钉扎结构具有由非磁性反平行耦合（APC）层分离并且其磁化方向反平行取向的两个铁磁层。 AP钉扎结构中的铁磁层之一是与CPP-SV传感器的非磁性导电间隔层接触的参考层。在改进的AP钉扎结构中，每个铁磁层的厚度大于30埃，优选大于约50埃，APC层是厚度小于7埃，优选约5埃或更小的Ru或Ir 。超薄APC层，特别是由铱（Ir）形成时，提供了显着的耦合强度，以使厚铁磁层保持其磁化方向稳定的反向平行取向。

3. 发明公开

EP1653242A3 CPP Magnetoresistive Sensor and CPP Read Head 审中-公开
标题翻译： CPP磁致电阻传感器和CPP读头
公开(公告)号：EP1653242A3
公开(公告)日：2008-09-10
申请号：EP05105151.4
申请日：2005-06-13
申请人： Hitachi Global Storage Technologies Netherlands B.V.
发明人： Carey, Matthew J. , Childress, Jeffrey R. , Maat, Stefan
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer and with their magnetization directions oriented antiparallel. One of the ferromagnetic layers in the AP-pinned structure is the reference layer in contact with the CPP-SV sensor's nonmagnetic electrically conducting spacer layer. In the improved AP-pinned structure each of the ferromagnetic layers has a thickness greater than 30 Å, preferably greater than approximately 50 Å, and the APC layer is either Ru or Ir with a thickness less than 7 Å, preferably about 5 Å or less. The ultrathin APC layer, especially if formed of iridium (Ir), provides significant coupling strength to allow the thick ferromagnetic layers to retain their magnetization directions in a stable antiparallel orientation.

4. 发明公开

EP1850144A1 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise 审中-公开
标题翻译： CPP-磁阻传感器传感器平衡自由机Schichtstruktur und vermindertem strominduziertem Rauschen
公开(公告)号：EP1850144A1
公开(公告)日：2007-10-31
申请号：EP07250700.7
申请日：2007-02-20
申请人： Hitachi Global Storage Technologies Netherlands B.V.
发明人： Carey, Matthew J , Childress, Jeffrey R , Maat, Stefan , Smith, Neil
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor (200) has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (201) (FL1), a second free ferromagnetic layer (202) (FL2), and an antiparallel (AP) coupling (APC) layer (203) that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thicknesses of FL1 and FL2 are chosen to obtain the desired net free layer magnetic moment/area for the sensor, and the thickness of FL1 is preferably chosen to be greater than the spin-diffusion length of the electrons in the FL1 material to maximize the bulk spin-dependent scattering of electrons and thus maximize the sensor signal. The CPP sensor (200) operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer (120,122,123) to the APF structure, which results in suppression of current-induced noise.
摘要翻译：电流垂直于平面（CPP）磁阻传感器（200）具有作为自由层的反向平行自由（APF）结构和所施加的偏置或感测电流的特定方向。（APF）结构具有第一自由铁磁体（201）（FL1），第二自由铁磁层（202）（FL2）和反并联（AP）耦合（APC）层203，其将FL1和FL2耦合在一起反铁磁结果是FL1和FL2具有基本上反平行的磁化方向，并且在存在磁场的情况下一起旋转。选择FL1和FL2的厚度以获得用于传感器的期望的净自由层磁矩/面积，并且FL1的厚度优选地选择为大于FL1材料中的电子的自旋扩散长度，以使电子的体自旋依赖散射，从而使传感器信号最大化。 CPP传感器（200）与从被钉扎的铁磁层（120,122,123）指向APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

5. 发明公开

EP1612775A3 Extraordinary magnetoresistive sensor with in-stack bias 审中-公开
标题翻译：与所述层堆叠偏压异常磁致电阻传感器
公开(公告)号：EP1612775A3
公开(公告)日：2007-01-24
申请号：EP05252747.0
申请日：2005-05-04
申请人： Hitachi Global Storage Technologies Netherlands B.V.
发明人： Carey, Matthew J. , Gurney, Bruce A. , Maat, Stefan , Smith, Neil
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/39 , G11B5/3993 , G11B2005/0008 , H01L43/08
摘要： An extraordinary magnetoresistance (EMR) sensor has an antiferromagnetic/ferromagnetic exchange-coupled bilayer structure on top of the EMR active film. The ferromagnetic layer in the bilayer structure has perpendicular magnetic anisotropy and is exchange-biased by the antiferromagnetic layer. The antiferromagnetic/ferromagnetic bilayer structure provides a magnetic field perpendicular to the plane of the EMR active film to bias the magnetoresistance vs. field response of the EMR sensor. The ferromagnetic layer may be formed of any of the ferromagnetic materials useful for perpendicular magnetic recording, and is prepared in a way that its anisotropy axis is significantly out-of-plane. The antiferromagnetic layer is formed of any of the known Mn alloys, such as PtMn, NiMn, FeMn, IrMn, PdMn, PtPdMn and RhMn, or any of the insulating antiferromagnetic materials, such as those based on the cobalt oxide and nickel oxide antiferromagnetic materials.

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