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1. 发明公开

EP0877919A1 PROGRAMMABLE STANDARD FOR USE IN AN APPARATUS AND PROCESS FOR THE NONINVASIVE MEASUREMENT OF OPTICALLY ABSORBING COMPOUNDS 失效
标题翻译：可编程标准用在设备和方法，一种非侵入性光学测量的吸收组件
公开(公告)号：EP0877919A1
公开(公告)日：1998-11-18
申请号：EP97903884.0
申请日：1997-01-30
申请人： Abbott Laboratories
发明人： LINDBERG, John, M. , HEINZ, Robert, E.
IPC分类号： G01J3 , G01N21
CPC分类号： G01J3/28 , G01J3/02 , G01J3/0208 , G01J3/0229 , G01J3/457 , G01J2003/1286 , G01J2003/2836 , G01J2003/2866
摘要： The present invention provides a programmable filter for use as a standard in correlation spectrometers. Also provided is the use of the programmable standard in a process for determining the concentration of an optically absorbing compound. Also provided is a method and apparatus for noninvasively determining the concentration of an optically absorbing biological sample which incorporates the programmable standard of the invention. In one embodiment the programmable standard (20) contains a dispersive element (106a) and a transmissive spatial light modulator (108). Because the position of each light beam correlates to its wavelength, spatial filter (108) controllably and selectively attenuates desired wavelengths of the input beam.

2. 发明公开

EP3175225A1 COHERENTLY RECEIVING SIMULTANEOUS OPTICAL-BASED ELECTRICAL SIGNALS 审中-实审
标题翻译：相干地接收同步的基于光学的电信号
公开(公告)号：EP3175225A1
公开(公告)日：2017-06-07
申请号：EP14899024.5
申请日：2014-08-01
申请人： Newport Corporation
发明人： CHEN, Anderson , PARK, John
IPC分类号： G01N21/47 , G01N21/55 , G01N21/59
CPC分类号： G01N21/55 , G01J3/00 , G01J3/02 , G01J3/0264 , G01J3/10 , G01J3/433 , G01J2003/104 , G01J2003/283 , G01J2003/2836 , G01J2003/4334 , G01N21/474 , G01N21/59 , G01N21/64 , G01N2021/556 , G01N2201/0691 , H02S50/10
摘要： Systems for measuring optical properties of a specimen are disclosed. The systems are configured to sample signals related to the measurement of the properties of a specimen, and perform software-based coherent detection of the signals to generate resulting measurements are based on the signals acquired at substantially the same time instance. This facilitates the displaying or generating of the desired measurements in real time. In one configuration, the system is configured to direct a modulated light signal at a selected wavelength incident upon a specimen. In another configuration, the system is configured to direct a combined light signal, derived from a plurality of light signals at different wavelengths and modulated with different frequencies, incident upon a specimen. In yet another configuration, the system is configured to direct a plurality of light signals modulated with different frequencies incident upon different regions of a specimen.
摘要翻译：公开了用于测量样本的光学性质的系统。系统被配置为对与样本的属性的测量相关的信号进行采样，并且执行对信号的基于软件的相干检测，以基于在基本上相同的时刻采集的信号来生成结果测量。这有助于实时显示或生成所需的测量结果。在一种配置中，该系统被配置为引导入射到样本上的选定波长的调制光信号。在另一种配置中，系统被配置为将从不同波长的多个光信号得到并用不同频率调制的组合光信号引导到样本上。在又一种配置中，系统被配置为将以不同频率调制的多个光信号入射到样本的不同区域上。

3. 发明授权

EP1906459B1 Semiconductor device 有权
公开(公告)号：EP1906459B1
公开(公告)日：2016-08-17
申请号：EP07018840.4
申请日：2007-09-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hirose, Atsushi
IPC分类号： H01L31/101
CPC分类号： H01L27/14632 , G01J1/44 , G01J2003/2836 , H01L27/1464 , H01L27/14687 , H04N5/23241 , H04N5/2351

4. 发明公开

EP1906459A2 Semiconductor device 有权
标题翻译： Halbleiterbauelement
公开(公告)号：EP1906459A2
公开(公告)日：2008-04-02
申请号：EP07018840.4
申请日：2007-09-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Hirose, Atsushi
IPC分类号： H01L31/101
CPC分类号： H01L27/14632 , G01J1/44 , G01J2003/2836 , H01L27/1464 , H01L27/14687 , H04N5/23241 , H04N5/2351
摘要： To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.
摘要翻译：通过减小放大器电路的寄生电阻来抑制设置在半导体器件中的光电转换元件的光敏性的降低。此外，放大光电转换元件的输出电流的放大电路稳定地工作。半导体器件包括光电转换元件，具有至少两个薄膜晶体管的电流镜电路，与每个薄膜晶体管电连接的高电位电源，以及与每个薄膜晶体管电连接的低电位电源薄膜晶体管。当参考薄膜晶体管是n型时，参考薄膜晶体管被放置得比输出薄膜晶体管更靠近低电位电源。当参考薄膜晶体管是p型时，参考薄膜晶体管被放置得比输出薄膜晶体管更靠近高电位电源。

5. 发明公开

EP2511680A3 Optimized orthonormal system and method for reducing dimensionality of hyperspectral Images 审中-公开
标题翻译：优化的标准正交系统和方法，用于高光谱图像Dimensionsionalitätsreduktion
公开(公告)号：EP2511680A3
公开(公告)日：2014-02-26
申请号：EP12163244.2
申请日：2012-04-04
申请人： Raytheon Company
发明人： Robinson, Ian S. , Bradley, A. Flanders
IPC分类号： G01J3/00 , G06K9/62
CPC分类号： G06K9/46 , G01J3/0264 , G01J3/027 , G01J3/06 , G01J3/2823 , G01J2003/2836 , G06K9/0063
摘要： A method for reducing dimensionality of hyperspectral images includes receiving a hyperspectral image having a plurality of pixels. The method may further include establishing an orthonormal basis vector set comprising a plurality of mutually orthogonal normalized members. Each of the mutually orthogonal normalized members may be associated with one of the plurality of pixels of the hyperspectral image. The method may further include decomposing the hyperspectral image into a reduced dimensionality image, utilizing calculations performed while establishing said orthonormal basis vector set. A system configured to perform the method may also be provided.

6. 发明公开

EP2511680A2 Optimized orthonormal system and method for reducing dimensionality of hyperspectral Images 审中-公开
标题翻译：优化系统和系统和维权
公开(公告)号：EP2511680A2
公开(公告)日：2012-10-17
申请号：EP12163244.2
申请日：2012-04-04
申请人： Raytheon Company
发明人： Robinson, Ian S. , Bradley, A. Flanders
IPC分类号： G01J3/00
CPC分类号： G06K9/46 , G01J3/0264 , G01J3/027 , G01J3/06 , G01J3/2823 , G01J2003/2836 , G06K9/0063
摘要： A method for reducing dimensionality of hyperspectral images includes receiving a hyperspectral image having a plurality of pixels. The method may further include establishing an orthonormal basis vector set comprising a plurality of mutually orthogonal normalized members. Each of the mutually orthogonal normalized members may be associated with one of the plurality of pixels of the hyperspectral image. The method may further include decomposing the hyperspectral image into a reduced dimensionality image, utilizing calculations performed while establishing said orthonormal basis vector set. A system configured to perform the method may also be provided.
摘要翻译：一种用于降低高光谱图像的维度的方法包括接收具有多个像素的高光谱图像。该方法还可以包括建立包括多个相互正交的归一化成员的正交基矢量集合。每个相互正交的标准化构件可以与高光谱图像的多个像素中的一个相关联。该方法可以进一步包括利用在建立所述正交基矢量集合时执行的计算来将高光谱图像分解为降维维度图像。还可以提供被配置为执行该方法的系统。

7. 发明公开

EP1906459A3 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：EP1906459A3
公开(公告)日：2012-06-06
申请号：EP07018840.4
申请日：2007-09-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hirose, Atsushi
IPC分类号： H01L31/101
CPC分类号： H01L27/14632 , G01J1/44 , G01J2003/2836 , H01L27/1464 , H01L27/14687 , H04N5/23241 , H04N5/2351
摘要： To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.
摘要翻译：为了通过减小放大器电路的寄生电阻来抑制设置在半导体器件中的光电转换元件的光敏性下降。另外，放大光电转换元件的输出电流的放大器电路稳定地工作。一种半导体器件包括光电转换元件，具有至少两个薄膜晶体管的电流镜像电路，与每个薄膜晶体管电连接的高电位电源以及电连接到每个薄膜晶体管的低电位电源薄膜晶体管。当参考薄膜晶体管是n型时，参考薄膜晶体管放置得比输出薄膜晶体管更接近低电位电源。当参考薄膜晶体管是p型时，参考薄膜晶体管放置为比输出薄膜晶体管更靠近高电位电源。

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