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1. 发明公开

EP1906459A3 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：EP1906459A3
公开(公告)日：2012-06-06
申请号：EP07018840.4
申请日：2007-09-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hirose, Atsushi
IPC分类号： H01L31/101
CPC分类号： H01L27/14632 , G01J1/44 , G01J2003/2836 , H01L27/1464 , H01L27/14687 , H04N5/23241 , H04N5/2351
摘要： To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.
摘要翻译：为了通过减小放大器电路的寄生电阻来抑制设置在半导体器件中的光电转换元件的光敏性下降。另外，放大光电转换元件的输出电流的放大器电路稳定地工作。一种半导体器件包括光电转换元件，具有至少两个薄膜晶体管的电流镜像电路，与每个薄膜晶体管电连接的高电位电源以及电连接到每个薄膜晶体管的低电位电源薄膜晶体管。当参考薄膜晶体管是n型时，参考薄膜晶体管放置得比输出薄膜晶体管更接近低电位电源。当参考薄膜晶体管是p型时，参考薄膜晶体管放置为比输出薄膜晶体管更靠近高电位电源。

2. 发明公开

EP1918995A2 Semiconductor device 有权
标题翻译： Halbleiterbauelement und Verfahren zur Herstellungdarfür
公开(公告)号：EP1918995A2
公开(公告)日：2008-05-07
申请号：EP07021194.1
申请日：2007-10-30
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yamazaki, Shunpei , Katayama, Masahiro , Oikawa, Yoshiaki , Hirose, Atsushi , Sakakura, Masayuki
IPC分类号： H01L27/146
CPC分类号： H01L27/1443 , H01L27/1214 , H01L27/1266 , H01L31/02005 , H01L31/02162 , H01L31/022408 , H01L31/02327 , H01L31/1055 , H01L31/1892 , H01M10/46 , H03F3/08 , Y02E10/50
摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.
摘要翻译：一种半导体器件，包括在第一绝缘膜上包括光电二极管的第一元件和放大光电二极管的输出电流的放大电路; 并且制造在第二绝缘膜上的在滤色器上方包括滤色器和外涂层的第二元件。第一元件和第二元件通过用接合材料接合第一绝缘膜和第二绝缘膜而彼此附接。此外，放大器电路是包括薄膜晶体管的电流镜电路。此外，可以使用彩色胶片代替滤色器。

3. 发明公开

EP1863091A2 Semiconductor device and electronic device using the same 审中-公开
标题翻译： Halbleiterbauelement und elektronische Vorrichtung damit
公开(公告)号：EP1863091A2
公开(公告)日：2007-12-05
申请号：EP07009634.2
申请日：2007-05-14
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Hirose, Atsushi , Arao, Tatsuya
IPC分类号： H01L27/144
CPC分类号： H01L27/1443 , G01J1/1626 , G01J1/4228 , G01J1/44
摘要： The semiconductor device includes a first photodiode, a second photodiode which is shielded from light, a first circuit group including a voltage follower circuit, a second circuit group, and a compensation circuit, in which an output from the first photodiode is inputted to the voltage follower circuit of the first circuit group, an output from the first circuit group is inputted to the compensation circuit, and an output from the second photodiode is inputted to the compensation circuit through the second circuit group. By adding or subtracting these inputs in the compensation circuit, an output fluctuation due to temperature of the first photodiode is removed. Note that a reference potential is supplied to the first photodiode so that an open circuit voltage is outputted, and a potential is supplied to the second photodiode so that a forward bias is applied to the second photodiode.
摘要翻译：半导体器件包括第一光电二极管，屏蔽光的第二光电二极管，包括电压跟随器电路，第二电路组和补偿电路的第一电路组，其中来自第一光电二极管的输出被输入到电压第一电路组的跟随器电路，第一电路组的输出被输入到补偿电路，并且来自第二光电二极管的输出通过第二电路组输入到补偿电路。通过在补偿电路中增加或减去这些输入，消除由于第一光电二极管的温度引起的输出波动。注意，将参考电位提供给第一光电二极管，使得开路电压被输出，并且向第二光电二极管提供电位，使得向第二光电二极管施加正向偏压。

4. 发明授权

EP1857907B1 Semiconductor device 有权
公开(公告)号：EP1857907B1
公开(公告)日：2009-08-26
申请号：EP07007102.2
申请日：2007-04-04
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Hirose, Atsushi
IPC分类号： G05F3/26 , H03F3/08
CPC分类号： H03F1/086 , G05F3/262 , H01L21/84 , H01L27/12 , H01L2224/16225 , H03F2200/513
摘要： In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.

5. 发明公开

EP1857907A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：EP1857907A1
公开(公告)日：2007-11-21
申请号：EP07007102.2
申请日：2007-04-04
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Hirose, Atsushi
IPC分类号： G05F3/26 , H03F3/08
CPC分类号： H03F1/086 , G05F3/262 , H01L21/84 , H01L27/12 , H01L2224/16225 , H03F2200/513
摘要： In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.
摘要翻译：在半导体器件中，对于电流镜电路中的寄生电阻器，在电流镜电路中设置用于补偿寄生电阻器的补偿电阻器，该电流镜电路包括至少两个薄膜晶体管。每个薄膜晶体管具有岛状半导体膜，该岛状半导体膜具有沟道形成区域和源极或漏极区域，栅极绝缘膜，栅极电极以及源极或漏极电极，并且补偿电阻器补偿寄生电阻器栅电极，源电极和漏电极。另外，每个补偿电阻器具有包含与栅极电极，源极电极或漏极电极或源极或漏极区域相同的材料的导电层。

6. 发明授权

EP1906459B1 Semiconductor device 有权
公开(公告)号：EP1906459B1
公开(公告)日：2016-08-17
申请号：EP07018840.4
申请日：2007-09-25
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hirose, Atsushi
IPC分类号： H01L31/101
CPC分类号： H01L27/14632 , G01J1/44 , G01J2003/2836 , H01L27/1464 , H01L27/14687 , H04N5/23241 , H04N5/2351

7. 发明公开

EP1863091A3 Semiconductor device and electronic device using the same 审中-公开
标题翻译：半导体设备和电子设备，以便
公开(公告)号：EP1863091A3
公开(公告)日：2012-11-21
申请号：EP07009634.2
申请日：2007-05-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hirose, Atsushi , Arao, Tatsuya
IPC分类号： H01L27/144 , G01J1/16 , G01J1/42 , G01J1/44
CPC分类号： H01L27/1443 , G01J1/1626 , G01J1/4228 , G01J1/44
摘要： The semiconductor device includes a first photodiode, a second photodiode which is shielded from light, a first circuit group including a voltage follower circuit, a second circuit group, and a compensation circuit, in which an output from the first photodiode is inputted to the voltage follower circuit of the first circuit group, an output from the first circuit group is inputted to the compensation circuit, and an output from the second photodiode is inputted to the compensation circuit through the second circuit group. By adding or subtracting these inputs in the compensation circuit, an output fluctuation due to temperature of the first photodiode is removed. Note that a reference potential is supplied to the first photodiode so that an open circuit voltage is outputted, and a potential is supplied to the second photodiode so that a forward bias is applied to the second photodiode.

8. 发明公开

EP1918995A3 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：EP1918995A3
公开(公告)日：2012-04-11
申请号：EP07021194.1
申请日：2007-10-30
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yamazaki, Shunpei , Katayama, Masahiro , Oikawa, Yoshiaki , Hirose, Atsushi , Sakakura, Masayuki
IPC分类号： H01L27/144
CPC分类号： H01L27/1443 , H01L27/1214 , H01L27/1266 , H01L31/02005 , H01L31/02162 , H01L31/022408 , H01L31/02327 , H01L31/1055 , H01L31/1892 , H01M10/46 , H03F3/08 , Y02E10/50
摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.
摘要翻译：一种半导体器件，其包括：第一元件，其在第一绝缘膜上包括光电二极管和放大所述光电二极管的输出电流的放大器电路; 制造在第二绝缘膜上的彩色滤光片上包括彩色滤光片和覆盖层的第二元件。第一元件和第二元件通过用接合材料接合第一绝缘膜和第二绝缘膜而彼此附接。此外，放大器电路是包括薄膜晶体管的电流镜像电路。另外，可以使用彩色膜来代替彩色滤光片。

9. 发明公开

EP1906459A2 Semiconductor device 有权
标题翻译： Halbleiterbauelement
公开(公告)号：EP1906459A2
公开(公告)日：2008-04-02
申请号：EP07018840.4
申请日：2007-09-25
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Hirose, Atsushi
IPC分类号： H01L31/101
CPC分类号： H01L27/14632 , G01J1/44 , G01J2003/2836 , H01L27/1464 , H01L27/14687 , H04N5/23241 , H04N5/2351
摘要： To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.
摘要翻译：通过减小放大器电路的寄生电阻来抑制设置在半导体器件中的光电转换元件的光敏性的降低。此外，放大光电转换元件的输出电流的放大电路稳定地工作。半导体器件包括光电转换元件，具有至少两个薄膜晶体管的电流镜电路，与每个薄膜晶体管电连接的高电位电源，以及与每个薄膜晶体管电连接的低电位电源薄膜晶体管。当参考薄膜晶体管是n型时，参考薄膜晶体管被放置得比输出薄膜晶体管更靠近低电位电源。当参考薄膜晶体管是p型时，参考薄膜晶体管被放置得比输出薄膜晶体管更靠近高电位电源。

10. 发明授权

EP1918995B1 Semiconductor device and its method of manufacturing 有权
标题翻译：半导体器件及其制造方法富尔
公开(公告)号：EP1918995B1
公开(公告)日：2013-09-18
申请号：EP07021194.1
申请日：2007-10-30
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yamazaki, Shunpei , Katayama, Masahiro , Oikawa, Yoshiaki , Hirose, Atsushi , Sakakura, Masayuki
IPC分类号： H01L27/144 , H01L31/02 , H01L31/0224 , H01L31/105 , H01L31/0216 , H01L27/32 , H01M10/46 , H03F3/08 , H02J7/02 , H01L31/18 , H01L31/0232
CPC分类号： H01L27/1443 , H01L27/1214 , H01L27/1266 , H01L31/02005 , H01L31/02162 , H01L31/022408 , H01L31/02327 , H01L31/1055 , H01L31/1892 , H01M10/46 , H03F3/08 , Y02E10/50
摘要： A semiconductor device including a first element including a photodiode and an amplifier circuit which amplifies output current of the photodiode, over a first insulating film; and a second element including a color filter and an overcoat layer over the color filter over a second insulating film is manufactured. The first element and the second element are attached to each other by bonding the first insulating film and the second insulating film with a bonding material. Further, the amplifier circuit is a current mirror circuit including a thin film transistor. Still further, a color film may be used instead of a color filter.

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